Abstract: The present disclosure relates to a semiconductor device, a solid state imaging element, and an electronic apparatus in which the adverse effect due to hot carrier luminescence can be suppressed. In them, an element formation unit in which a plurality of elements are formed and an interconnection unit in which interconnections connecting elements are formed are stacked. A structure object formed between a light receiving element that receives light and performs photoelectric conversion and an active element that forms a peripheral circuit placed around the light receiving element in such a manner that the gap in the thickness direction of the element formation unit is not more than a prescribed spacing and formed of a material that inhibits the propagation of light is placed in the element formation unit. The present technology can be applied to a back-side illumination solid state imaging element, for example.

Abstract: Provided is a device (20) for vibrating a string instrument (1) to allow the string instrument to be used as a loudspeaker. To press a base member (22) fitted with a vibration generator (50) against a bridge (13) of the string instrument (1) via a load point member (24) of a vibration transmission member (26), the base member (22) is provided with a fulcrum member (30) engaging an upper side of the strings (9) of the string instrument (1) and an anchor member (38) engaging a lower side of the strings (9). In order to urge the vibration transmission member (26) against the bridge (13), a cam mechanism (40) presses the anchor member (38) against the lower side of the strings (9).

Abstract: A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.

Abstract: A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.

Abstract: A semiconductor device, includes: a first semiconductor layer having a first conductivity type; a pair of first electrodes arranged to be separated from each other in the first semiconductor layer; a second electrode provided on the first semiconductor layer between the pair of first electrodes with a dielectric film in between; and a pair of connection sections electrically connected to the pair of first electrodes, wherein one or both of the pair of first electrodes are divided into a first region and a second region, the first region and the second region being connected by a bridge section.

Abstract: A solid-state imaging device includes a pixel array unit having a plurality of pixels arranged in a matrix form which perform a photoelectric conversion, a pixel signal readout unit having a logic unit and performing a readout of a pixel signal from the pixel array unit, a regulator, a first circuit section, a second circuit section, and a stacked structure in which the first and second circuit sections are bonded, wherein the first circuit section has the pixel array unit disposed therein, and wherein the second circuit section has at least the logic unit and the regulator disposed therein, wherein the regulator includes a reference voltage generation, a plurality of output stage transistors, and an operational amplifier comparing the reference voltage and a commonized output voltage, and an output path of the output stage transistors are connected to a single node, and then is fed back to the operational amplifier.

Abstract: The present technology relates to a semiconductor device and electronic equipment in which a semiconductor device that suppresses the occurrence of noise by a leakage of light can be provided. A semiconductor device is configured which includes a light-receiving element 34, an active element for signal processing, and a light shielding structure 40 which is between the light-receiving element 34 and the active element to cover the active element and is formed of wirings 45 and 46. The semiconductor device further includes a first substrate on which the light-receiving element is formed, a second substrate on which the active element is formed, and a wiring layer which has a light shielding structure by the wirings which is formed on the second substrate, and in which the second substrate can be bonded to the first substrate through the wiring layer.

Abstract: An ion radiation damage prediction method includes a parameter computation step of computing the incidence energy and incidence angle of an incident ion hitting a fabricated object, and a step of searching for data in databases created in advance on the basis of the computed incidence energy and angle, the databases storing distributions of quantities of crystalline defects having an effect on the fabricated object, ion reflection probabilities and ion penetration depths. The method also includes finding the penetration depth and location of the incident ion based on the data found in the searching step and based on the computed incidence energy and angle, and computing a quantity of defects in the fabricated object from the penetration depth and location. A distribution of defects may be computed by performing the aforementioned steps for many incident ions.

Abstract: A solid-state imaging device includes a pixel array unit having a plurality of pixels arranged in a matrix form which perform a photoelectric conversion, a pixel signal readout unit having a logic unit and performing a readout of a pixel signal from the pixel array unit, a regulator, a first circuit section, a second circuit section, and a stacked structure in which the first and second circuit sections are bonded, wherein the first circuit section has the pixel array unit disposed therein, and wherein the second circuit section has at least the logic unit and the regulator disposed therein, wherein the regulator includes a reference voltage generation, a plurality of output stage transistors, and an operational amplifier comparing the reference voltage and a commonized output voltage, and an output path of the output stage transistors are connected to a single node, and then is fed back to the operational amplifier.

Abstract: A semiconductor device, includes: a first semiconductor layer having a first conductivity type; a pair of first electrodes arranged to be separated from each other in the first semiconductor layer; a second electrode provided on the first semiconductor layer between the pair of first electrodes with a dielectric film in between; and a pair of connection sections electrically connected to the pair of first electrodes, wherein one or both of the pair of first electrodes are divided into a first region and a second region, the first region and the second region being connected by a bridge section.

Abstract: A solid-state imaging device includes a pixel array unit having a plurality of pixels arranged in a matrix form which perform a photoelectric conversion, a pixel signal readout unit having a logic unit and performing a readout of a pixel signal from the pixel array unit, a regulator, a first chip, a second chip, and a stacked structure in which both the first chip and the second chip are bonded, wherein the first chip has the pixel array unit disposed therein, and wherein the second chip has at least the logic unit and the regulator disposed therein, wherein the regulator includes a reference voltage generation, a plurality of output stage transistors, and an operational amplifier comparing the reference voltage and a commonized output voltage, and an output path of the output stage transistors are connected to a single node, and then is fed back to the operational amplifier.

Abstract: An automotive headlamp apparatus includes a light source, in which a plurality of LED chips are arranged at intervals from each other, and a projection lens for projecting the light, emitted from the light source, toward a front area of a vehicle as a light source image. The semiconductor light-emitting elements may be located within than a focal point of the projection lens. The LED chip is arranged such that the light emitting surface of the LED chip faces the front area of the vehicle. The light emitting surface of the LED chip may be of a rectangular shape and the LED chip may be arranged such that a side of the light emitting surface is at a slant with respect to the vehicle width direction.

Abstract: A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.

Abstract: An ion radiation damage prediction method includes a parameter computation step of computing the incidence energy and incidence angle of an incident ion hitting a fabricated object, and a step of searching for data in databases created in advance on the basis of the computed incidence energy and angle, the databases storing distributions of quantities of crystalline defects having an effect on the fabricated object, ion reflection probabilities and ion penetration depths. The method also includes finding the penetration depth and location of the incident ion based on the data found in the searching step and based on the computed incidence energy and angle, and computing a quantity of defects in the fabricated object from the penetration depth and location. A distribution of defects may be computed by performing the aforementioned steps for many incident ions.

Abstract: A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.

Abstract: An ion radiation damage prediction method includes a parameter computation step of computing the collision position and the incidence angle of an incident ion hitting a fabricated object by considering a transport path of the ion and by adopting the Monte Carlo method which takes distributions of flux quantities, incidence energies and angles of incident ions as input parameters; and a defect-distribution computation step of searching for data by referring to information found at the parameter computation step and databases created in advance, the databases storing distributions of quantities of crystalline defects having an effect on the fabricated object, ion reflection probabilities and ion penetration depths, finding the penetration depth and location of the incident ion based on the data found in the search operation, and the incidence energy and angle of the incident ion, and computing a distribution of defects in the fabricated object from the penetration depth and location.

Abstract: A vehicular headlamp includes a projection lens, a light source, a reflector, and a liquid crystal shutter. The liquid crystal shutter includes a pair of transparent plates, a liquid crystal member, and a pair of polarization plates. The liquid crystal member is disposed only in a part of an area between the pair of transparent plates. The pair of polarization plates are disposed only in an area of the outer surface of the pair of transparent plates corresponding to an area in which the liquid crystal member is disposed. The area in which the liquid crystal member is disposed includes a first area for blocking a part of reflected light from the reflector such that light emitted from the projection lens forms a low-beam distribution pattern having a cut-off line at an upper end edge, and a second area for blocking light emitted from the projection lens and then reflected by a road surface ahead of a vehicle toward a space above the cut-off line.

Abstract: A headlamp control device is provided. The device includes a visual object luminance unit, an adapted state unit, a recognition limit unit, a visual object recognition unit, and a light distribution control unit. The visual object luminance unit estimates a visual object luminance based on information about a vehicle forward captured image. The adapted state unit estimates an adaptation luminance based on the information about the vehicle forward captured image. The recognition limit unit estimates a recognition limit luminance, in the visual object range, based on at least the adaptation luminance. The visual object recognition unit determines whether the visual object luminance is less than the recognition limit luminance. The light distribution control unit controls a light distribution of a headlamp unit such that the visual object luminance is included in a range of the recognition limit luminance, if the visual object luminance is less than the recognition limit luminance.

Abstract: A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.

Abstract: A headlamp controller includes: a headlamp unit configured to illuminate a front area of a vehicle with a light distribution pattern; an image capturing camera configured to capture an image of the front area; and a light distribution controller including: a road shape detecting unit configured to detect a road shape based on the captured image; a reference optical flow generating unit configured to generate a reference optical flow for a target object belonging to one of attributes based on the road shape; a bright point optical flow measuring unit configured to measure an optical flow of a bright point defined as a target in the captured image; and an attribute determining unit configured to compare the reference optical flow with the optical flow of the bright point and determine which one of the attributes the optical flow of the bright point belongs.