Abstract: The mold device according to the present invention is a mold device to resin-seal the semiconductor device including an insert electrode, and in the semiconductor device, the insert electrode is provided with an insert hole, a nut having a screw hole is disposed in the insert electrode so that the insert hole and the screw hole communicate with each other, the mold device includes a mold body into which resin is injected to resin-seal the semiconductor device, including a side of the insert electrode where the nut is disposed, and a rod-like member that is inserted into the insert hole, and the rod-like member is inserted into the screw hole of the nut through the insert hole of the insert electrode to draw the nut to the side of the insert electrode.

Abstract: A semiconductor module having a plurality of cooling fins and a fixing cooling fin longer than the plurality of cooling fins, the fixing cooling fin having a threaded hole provided in distal end portion thereof, a cooling jacket having a cooling medium passage in which the plurality of cooling fins and the fixing cooling fin are housed, and an opening formed so as to enable a screw to be inserted in the threaded hole, and a screw passed through the opening to be inserted in the threaded hole, the cooling jacket being fixed to the semiconductor module with the screw are provided.

Abstract: A semiconductor module having a plurality of cooling fins and a fixing cooling fin longer than the plurality of cooling fins, the fixing cooling fin having a threaded hole provided in distal end portion thereof, a cooling jacket having a cooling medium passage in which the plurality of cooling fins and the fixing cooling fin are housed, and an opening formed so as to enable a screw to be inserted in the threaded hole, and a screw passed through the opening to be inserted in the threaded hole, the cooling jacket being fixed to the semiconductor module with the screw are provided.

Abstract: A semiconductor module having a plurality of cooling fins and a fixing cooling fin longer than the plurality of cooling fins, the fixing cooling fin having a threaded hole provided in distal end portion thereof, a cooling jacket having a cooling medium passage in which the plurality of cooling fins and the fixing cooling fin are housed, and an opening formed so as to enable a screw to be inserted in the threaded hole, and a screw passed through the opening to be inserted in the threaded hole, the cooling jacket being fixed to the semiconductor module with the screw are provided.

Abstract: A platinum wire in which crystal grain growth is slowed in order to prevent damage caused by creep without dispersing a metal oxide, and occurrence of slip at crystal grain boundaries is slowed. A platinum thermocouple wire that is used in a negative electrode of a platinum-based thermocouple and has a nitrogen mass concentration of 10 to 100 ppm, and when structure observation of the cross section of the wire in a longitudinal direction is performed, a structure is observed in which there is a plurality of crystal grains, which have an aspect ratio {(length of major axis)/(length of minor axis perpendicular to major axis)} of 5 or more and elongate in the longitudinal direction of the wire, in a wire thickness direction.

Abstract: A semiconductor device of the present invention includes a semiconductor element having an upper surface and a lower surface, a metal plate thermally connected to the lower surface, an upper surface electrode soldered to the upper surface, an insulating sheet formed on the upper surface electrode so as to be in surface contact with the upper surface electrode, a shielding plate formed on the insulating sheet so as to be in surface contact with the insulating sheet, the shielding plate shielding against radiation noise, and a resin with which the semiconductor element is covered, while a portion of the upper surface electrode, a portion of the shielding plate and a lower surface of the metal plate are exposed to the outside, wherein the heat conductivity of the insulating sheet is higher than the heat conductivity of the resin.

Abstract: The present invention relates to a semiconductor device used in power equipment. The semiconductor device includes: a base plate; an insulating substrate mounted on the base plate; a power switching element bonded to the insulating substrate with a solder layer; and the base plate, the insulating substrate, and the power switching element forming a module, a control substrate located above the module. The control substrate includes a variable gate voltage circuit measuring a collector-emitter voltage of the power switching element and changing a gate voltage such that the power switching element is supplied with given target power determined by a product of the collector-emitter voltage and a collector current.

Abstract: Method of producing a target having a small average crystal grain size of gold or platinum and having a uniform crystal grain size in an in-plane direction of a target surface and a thickness direction of the target in order to further stabilize film deposition characteristics during sputtering.

Abstract: An object of the present invention is to achieve reductions in size and costs of a vehicle-mounted motor driving control board in a configuration which allows the redundancy of a power supply to be ensured. The vehicle-mounted motor driving control board is formed by one printed circuit board on which are formed two inverter driving circuits for driving two inverter circuits for three-phase motors, and a voltage step-up/step-down driving circuit for driving a voltage step-up/step-down circuit for supplying electric power to the inverter circuits. The vehicle-mounted motor driving control board further includes a first power supply circuit for supplying electric power to part of constituent circuits constituting the voltage step-up/step-down driving circuit and the two inverter driving circuits, and a second power supply circuit for supplying electric power to the remainder of the constituent circuits in the voltage step-up/step-down driving circuit and the two inverter driving circuits.

Abstract: The present invention relates to a semiconductor device used in power equipment. The semiconductor device includes: a base plate; an insulating substrate mounted on the base plate; a power switching element bonded to the insulating substrate with a solder layer; and the base plate, the insulating substrate, and the power switching element forming a module, a control substrate located above the module. The control substrate includes a variable gate voltage circuit measuring a collector-emitter voltage of the power switching element and changing a gate voltage such that the power switching element is supplied with given target power determined by a product of the collector-emitter voltage and a collector current.

Abstract: A thermocouple that can stably perform direct temperature measurement under a high temperature environment (1500° C. or higher but 2300° C. or lower) and a manufacturing method for the same. A thermocouple according to a first embodiment is a thermocouple including at least a protective tube and element wires, the protective tube and the element wires are insulated from one another by an insulator, and the insulator is either one or both of a powder and a compact, and is composed of at least one of a zirconium oxide, a hafnium oxide, or a composite oxide of zirconium and hafnium.

Abstract: A semiconductor module having a plurality of cooling fins and a fixing cooling fin longer than the plurality of cooling fins, the fixing cooling fin having a threaded hole provided in distal end portion thereof, a cooling jacket having a cooling medium passage in which the plurality of cooling fins and the fixing cooling fin are housed, and an opening formed so as to enable a screw to be inserted in the threaded hole, and a screw passed through the opening to be inserted in the threaded hole, the cooling jacket being fixed to the semiconductor module with the screw are provided.

Abstract: A semiconductor device of the present invention includes a semiconductor element having an upper surface and a lower surface, a metal plate thermally connected to the lower surface, an upper surface electrode soldered to the upper surface, an insulating sheet formed on the upper surface electrode so as to be in surface contact with the upper surface electrode, a shielding plate formed on the insulating sheet so as to be in surface contact with the insulating sheet, the shielding plate shielding against radiation noise, and a resin with which the semiconductor element is covered, while a portion of the upper surface electrode, a portion of the shielding plate and a lower surface of the metal plate are exposed to the outside, wherein the heat conductivity of the insulating sheet is higher than the heat conductivity of the resin.

Abstract: An object of the present invention is to achieve reductions in size and costs of a vehicle-mounted motor driving control board in a configuration which allows the redundancy of a power supply to be ensured. The vehicle-mounted motor driving control board is formed by one printed circuit board on which are formed two inverter driving circuits for driving two inverter circuits for three-phase motors, and a voltage step-up/step-down driving circuit for driving a voltage step-up/step-down circuit for supplying electric power to the inverter circuits. The vehicle-mounted motor driving control board further includes a first power supply circuit for supplying electric power to part of constituent circuits constituting the voltage step-up/step-down driving circuit and the two inverter driving circuits, and a second power supply circuit for supplying electric power to the remainder of the constituent circuits in the voltage step-up/step-down driving circuit and the two inverter driving circuits.

Abstract: A semiconductor device includes a semiconductor element including a first element portion having a first gate and a second element portion having a second gate, wherein the turning on and off of the first and second element portions are controlled by a signal from the first and second gates respectively. The semiconductor device further includes signal transmission means connected to the first gate and the second gate and transmitting a signal to the first gate and the second gate so that when the semiconductor element is to be turned on, the first element portion and the second element portion are simultaneously turned on, and so that when the semiconductor element is to be turned off, the second element portion is turned off a delay time after the first element portion is turned off.

Abstract: The present invention provides a meter display device provided in a vehicle, including a display portion having a display region in which a plurality of display areas extending elongatedly in the left-right direction of a meter body are provided in proximity in a line arrangement in the orthogonal direction orthogonal to the left-right direction, and a display control portion switching each of the display areas between the display operated state and the non-display operated state and increasing the number of the display areas display-operated.

Abstract: An input device is manufactured from a roll of a single-layer flexible transparent base sheet having a first surface and a second surface by forming a transparent electrode pattern and a wiring layer on the first surface. The transparent electrode pattern is disposed in a transparent input region, and the wiring layer extends from an end of the transparent electrode pattern into a decorative region surrounding the transparent input region. A decorative layer pattern is formed on the second surface in the decorative region, while conveying the transparent base sheet through a roll-to-roll processing. The transparent base sheet having the transparent electrode pattern and the decorative layer pattern is divided into individual units. A transparent panel having an operation surface is bonded to the second surface of each of the individual units with an optically clear adhesive layer interposed therebetween.

Abstract: A power semiconductor device includes first and second power semiconductor elements connected in parallel to each other and a drive control unit. The drive control unit turns on or off each of the first and second power semiconductor elements in response to an ON instruction and an OFF instruction repeatedly received from outside. Specifically, the drive control unit can switch between a case where the first and second power semiconductor elements are simultaneously turned on and a case where one of the first and second power semiconductor elements is turned on first and thereafter the other thereof is turned on, in response to the ON instruction. The drive control unit turns off one of the first and second power semiconductor elements first and thereafter turns off the other thereof, in response to the OFF instruction.

Abstract: A touch panel (input device) includes a flexible transparent base; a transparent electrode formed on a first surface of the transparent base; a decorative layer formed on a second surface of the transparent base, the second surface being opposite the first surface; and a transparent panel (glass panel) bonded to the second surface of the transparent base, with an optical clear adhesive layer interposed therebetween.

Abstract: An input device is manufactured from a roll of a single-layer flexible transparent base sheet having a first surface and a second surface by forming a transparent electrode pattern and a wiring layer on the first surface. The transparent electrode pattern is disposed in a transparent input region, and the wiring layer extends from an end of the transparent electrode pattern into a decorative region surrounding the transparent input region. A decorative layer pattern is formed on the second surface in the decorative region, while conveying the transparent base sheet through a roll-to-roll processing. The transparent base sheet having the transparent electrode pattern and the decorative layer pattern is divided into individual units. A transparent panel having an operation surface is bonded to the second surface of each of the individual units with an optically clear adhesive layer interposed therebetween.