Patents by Inventor Shooji Kubono
Shooji Kubono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8004905Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: GrantFiled: March 18, 2010Date of Patent: August 23, 2011Assignee: Renesas Electronics CorporationInventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Publication number: 20100182847Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: ApplicationFiled: March 18, 2010Publication date: July 22, 2010Applicant: RENESAS TECHNOLOGY CORP.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Patent number: 7697345Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: GrantFiled: June 25, 2008Date of Patent: April 13, 2010Assignee: Renesas Technology Corp.Inventors: Tetsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Publication number: 20090003085Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: ApplicationFiled: June 25, 2008Publication date: January 1, 2009Inventors: Tatsuya ISHII, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Patent number: 7405979Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: GrantFiled: September 7, 2007Date of Patent: July 29, 2008Assignee: Renesas Technology Corp.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Publication number: 20080008009Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: ApplicationFiled: September 7, 2007Publication date: January 10, 2008Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Patent number: 7283399Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: GrantFiled: August 3, 2006Date of Patent: October 16, 2007Assignee: Renesas Technology Corp.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Patent number: 7145805Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: GrantFiled: January 31, 2006Date of Patent: December 5, 2006Assignees: Renesas Technology Corp., Hitachi ULSI Engineering Corp.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Publication number: 20060268610Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: ApplicationFiled: August 3, 2006Publication date: November 30, 2006Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Patent number: 7072222Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: GrantFiled: March 10, 2005Date of Patent: July 4, 2006Assignees: Renesas Technology Corp., Hitachi ULSI Engineering Corp.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Publication number: 20060120164Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: ApplicationFiled: January 31, 2006Publication date: June 8, 2006Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Publication number: 20050157550Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: ApplicationFiled: March 10, 2005Publication date: July 21, 2005Inventors: Tatsuya Ishii, Hitoshi Nina, Osamu Tsuchiya, Shooji Kubono
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Patent number: 6906952Abstract: In a nonvolatile semiconductor memory device wherein a plurality of threshold voltages are set so as to store multivalued information in one memory cell, data is first written into the memory cell whose threshold voltage is the lowest as a written state from the erase level, and data is successively written into memory cells whose threshold voltages are higher.Type: GrantFiled: March 24, 2003Date of Patent: June 14, 2005Assignees: Renesas Technology Corp., Hitachi ULSI Engineering Corp.Inventors: Keiichi Yoshida, Shooji Kubono
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Patent number: 6873552Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: GrantFiled: October 9, 2003Date of Patent: March 29, 2005Assignees: Renesas Technology Corp., Hitachi ULSI Engineering Corp.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Publication number: 20040114434Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: ApplicationFiled: October 9, 2003Publication date: June 17, 2004Applicants: Hitachi, Ltd., Hitachi ULSI Engineering Corp.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Patent number: 6683811Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: GrantFiled: March 17, 2003Date of Patent: January 27, 2004Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Publication number: 20030185056Abstract: In a nonvolatile semiconductor memory device wherein a plurality of threshold voltages are set so as to store multivalued information in one memory cell, data is first written into the memory cell whose threshold voltage is the lowest as a written state from the erase level, and data is successively written into memory cells whose threshold voltages are higher.Type: ApplicationFiled: March 24, 2003Publication date: October 2, 2003Inventors: Keiichi Yoshida, Shooji Kubono
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Publication number: 20030156459Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: ApplicationFiled: March 17, 2003Publication date: August 21, 2003Applicant: Hitachi, Ltd.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Patent number: 6567311Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: GrantFiled: March 13, 2002Date of Patent: May 20, 2003Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Patent number: RE44350Abstract: In a nonvolatile semiconductor memory device wherein a plurality of threshold voltages are set so as to store multi-valued information in one memory cell, data is first written into the memory cell whose threshold voltage is the lowest as a written state from the erase level, and data is successively written into memory cells whose threshold voltages are higher.Type: GrantFiled: June 7, 2010Date of Patent: July 9, 2013Assignee: Renesas Electronics CorporationInventors: Keiichi Yoshida, Shooji Kubono