Patents by Inventor Shooji Kubono
Shooji Kubono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6525960Abstract: In the nonvolatile semiconductor memory device, a plurality of threshold voltages are associated with the programming of multi-valued information in one memory cell, data is first written into a memory cell having a threshold voltage which is the lowest or furthest away from the threshold voltage corresponding to the erase level, and data is successively written into memory cells having higher threshold voltages, namely, threshold voltages that are successively closer to the erase level, thereby overcoming threshold voltage fluctuations attributed to word line disturbance.Type: GrantFiled: June 29, 1999Date of Patent: February 25, 2003Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp.Inventors: Keiichi Yoshida, Shooji Kubono
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Publication number: 20020181279Abstract: In a nonvolatile semiconductor memory device wherein a plurality of threshold voltages are set so as to store, multivalued information in one memory cell, data is first written into the memory cell whose threshold voltage is the lowest as a written state from the erase level, and data is successively written into memory cells whose threshold voltages are higher.Type: ApplicationFiled: June 29, 1999Publication date: December 5, 2002Inventors: KEIICHI YOSHIDA, SHOOJI KUBONO
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Publication number: 20020136056Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: ApplicationFiled: March 13, 2002Publication date: September 26, 2002Applicant: Hitachi, Ltd.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Patent number: 6452838Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: GrantFiled: November 27, 2001Date of Patent: September 17, 2002Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Patent number: 6392932Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: GrantFiled: November 17, 2000Date of Patent: May 21, 2002Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Publication number: 20020054506Abstract: In a nonvolatile semiconductor memory device wherein a plurality of threshold voltages are set so as to store multivalued information in one memory cell, data is first written into the memory cell whose threshold voltage is the lowest as a written state from the erase level, and data is successively written into memory cells whose threshold voltages are higher.Type: ApplicationFiled: October 31, 2001Publication date: May 9, 2002Inventors: Keiichi Yoshida, Shooji Kubono
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Publication number: 20020054511Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: ApplicationFiled: November 27, 2001Publication date: May 9, 2002Applicant: Hitachi, Ltd.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Patent number: 6385092Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: GrantFiled: September 25, 2001Date of Patent: May 7, 2002Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Publication number: 20020034099Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: ApplicationFiled: September 25, 2001Publication date: March 21, 2002Applicant: Hitaci, Ltd.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Patent number: 6320785Abstract: In a nonvolatile semiconductor memory device wherein a plurality of threshold voltages are set so as to store multivalued information in one memory cell, data is first written into the memory cell whose threshold voltage is the lowest as a written state from the erase level, and data is successively written into memory cells whose threshold voltages are higher.Type: GrantFiled: October 5, 2000Date of Patent: November 20, 2001Assignees: Hitachi, Ltd., Hitachi ULSI Engineering CorporationInventors: Keiichi Yoshida, Shooji Kubono
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Patent number: 6157573Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: GrantFiled: December 21, 1999Date of Patent: December 5, 2000Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Patent number: 6023425Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: GrantFiled: June 29, 1999Date of Patent: February 8, 2000Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Patent number: 6009016Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: GrantFiled: June 2, 1999Date of Patent: December 28, 1999Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Patent number: 5982668Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: GrantFiled: August 18, 1998Date of Patent: November 9, 1999Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Patent number: 5959882Abstract: In a nonvolatile semiconductor memory device wherein a plurality of threshold voltages are set so as to store multivalued information in one memory cell, data is first written into the memory cell whose threshold voltage is the lowest as a written state from the erase level, and data is successively written into memory cells whose threshold voltages are higher.Type: GrantFiled: July 9, 1997Date of Patent: September 28, 1999Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp.Inventors: Keiichi Yoshida, Shooji Kubono
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Patent number: 5867428Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.Type: GrantFiled: July 8, 1997Date of Patent: February 2, 1999Assignees: Hitachi, Ltd., USLI Engineering Corp.Inventors: Tatsuya Ishii, Hitoshi Miwa, Osamu Tsuchiya, Shooji Kubono
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Patent number: 5553021Abstract: A semiconductor integrated circuit is provided which includes a charge pump circuit for forming a step-up (boost) voltage higher than a desired internal voltage, a voltage dividing circuit which forms a plurality of divided voltages based on a reference voltage, and a control circuit which intermittently operates the charge pump circuit so that an output voltage of the charge pump circuit provides the desired internal voltage obtained by adding a voltage obtained by multiplying a particular voltage among the plurality of divided voltages by n to a predetermined divided voltage.Type: GrantFiled: December 13, 1994Date of Patent: September 3, 1996Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp.Inventors: Shooji Kubono, Hitoshi Kume