Patents by Inventor Shosuke Endoh
Shosuke Endoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8727708Abstract: A reflecting device that enables to prevent infiltration of particles into a processing chamber. The reflecting device is disposed in a communicating pipe. The communicating pipe allows the processing chamber of a substrate processing apparatus and an exhaust pump to communicate with each other. The exhaust pump has at least one rotary blade. The reflecting device comprises at least one reflecting surface. The at least one reflecting surface is oriented to the exhausting pump.Type: GrantFiled: March 14, 2011Date of Patent: May 20, 2014Assignee: Tokyo Electron LimitedInventors: Tsuyoshi Moriya, Takahiro Murakami, Yoshiyuki Kobayashi, Tetsuji Sato, Eiichi Sugawara, Shosuke Endoh, Masaki Fujimori
-
Publication number: 20120200051Abstract: A coating method for an internal member of a vacuum processing apparatus is provided. The method includes a process (A) of filling small holes 78 of the internal member 81 with padding plugs 20 each of which has a core member 22 made from a metal material and a metal-resin composite layer 24 covering the circumferential surface of the core member 22, a process (B) of forming the ceramic coating film 80 on the surface of the internal member 81 by plasma spraying after the process (A), and a process (C) of extracting the padding plugs 20 after the process (B). This coating method solves various problems in filling the holes with the pudding plugs, so that a coating film superior in quality and performance can be produced effectively.Type: ApplicationFiled: March 26, 2012Publication date: August 9, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Jun TAKEUCHI, Masaaki KISHIDA, Tadakazu MATSUNAGA, Shosuke ENDOH
-
Patent number: 8124539Abstract: A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.Type: GrantFiled: August 4, 2010Date of Patent: February 28, 2012Assignee: Tokyo Electron LimitedInventors: Shosuke Endoh, Noriyuki Iwabuchi, Shigeaki Kato, Tomoya Okubo, Jun Hirose, Koichi Nagakura, Chishio Koshimizu, Kazuki Denpoh
-
Publication number: 20120037314Abstract: A substrate processing apparatus that enables abnormal electrical discharges and metal contamination to be prevented from occurring. A processing chamber is configured to house and carry out predetermined plasma processing on a substrate. A lower electrode is disposed on a bottom portion of the processing chamber and has the substrate mounted thereon. An upper electrode is disposed in a ceiling portion of the processing chamber. A side wall component covering a side wall of the processing chamber faces onto a processing space between the upper electrode and the lower electrode. The side wall component has at least one electrode layer to which a DC voltage is applied. An insulating portion made of an insulating material is present at least between the electrode layer and the processing space and covers the electrode layer. The insulating portion is formed by thermally spraying the insulating material.Type: ApplicationFiled: October 21, 2011Publication date: February 16, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Shosuke ENDOH, Tsuyoshi MORIYA, Akitaka SHIMIZU
-
Patent number: 8114247Abstract: A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is disposed on a susceptor 2, which serves to mount thereon a semiconductor wafer W and further functions as a lower electrode, to surround a periphery of the semiconductor wafer W. The focus ring 6 includes a ring member of a thin plate shape disposed to surround the periphery of the wafer W while maintaining a gap therebetween and a lower ring body installed below the semiconductor wafer and the ring member of the thin plate shape.Type: GrantFiled: November 8, 2010Date of Patent: February 14, 2012Assignee: Tokyo Electron LimitedInventors: Shosuke Endoh, Shinji Himori
-
Publication number: 20110162678Abstract: A reflecting device that enables to prevent infiltration of particles into a processing chamber. The reflecting device is disposed in a communicating pipe. The communicating pipe allows the processing chamber of a substrate processing apparatus and an exhaust pump to communicate with each other. The exhaust pump has at least one rotary blade. The reflecting device comprises at least one reflecting surface. The at least one reflecting surface is oriented to the exhausting pump.Type: ApplicationFiled: March 14, 2011Publication date: July 7, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Tsuyoshi MORIYA, Takahiro Murakami, Yoshiyuki Kobayashi, Tetsuji Sato, Eiichi Sugawara, Shosuke Endoh, Masaki Fujimori
-
Patent number: 7927066Abstract: A reflecting device that enables to prevent infiltration of particles into a processing chamber. The reflecting device is disposed in a communicating pipe. The communicating pipe allows the processing chamber of a substrate processing apparatus and an exhaust pump to communicate with each other. The exhaust pump has at least one rotary blade. The reflecting device comprises at least one reflecting surface. The at least one reflecting surface is oriented to the exhausting pump.Type: GrantFiled: March 2, 2006Date of Patent: April 19, 2011Assignee: Tokyo Electron LimitedInventors: Tsuyoshi Moriya, Takahiro Murakami, Yoshiyuki Kobayashi, Tetsuji Sato, Eiichi Sugawara, Shosuke Endoh, Masaki Fujimori
-
Publication number: 20110048643Abstract: A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is disposed on a susceptor 2, which serves to mount thereon a semiconductor wafer W and further functions as a lower electrode, to surround a periphery of the semiconductor wafer W. The focus ring 6 includes a ring member of a thin plate shape disposed to surround the periphery of the wafer W while maintaining a gap therebetween and a lower ring body installed below the semiconductor wafer and the ring member of the thin plate shape.Type: ApplicationFiled: November 8, 2010Publication date: March 3, 2011Applicant: TOKYO ELECTON LIMITEDInventors: Shosuke Endoh, Shinji Himori
-
Publication number: 20110000883Abstract: A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.Type: ApplicationFiled: August 4, 2010Publication date: January 6, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Shosuke Endoh, Noriyuki Iwabuchi, Shigeaki Kato, Tomoya Okubo, Jun Hirose, Koichi Nagakura, Chishio Koshimizu, Kazuki Denpoh
-
Patent number: 7850174Abstract: A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is disposed on a susceptor 2, which serves to mount thereon a semiconductor wafer W and further functions as a lower electrode, to surround a periphery of the semiconductor wafer W. The focus ring 6 includes a ring member of a thin plate shape disposed to surround the periphery of the wafer W while maintaining a gap therebetween and a lower ring body installed below the semiconductor wafer and the ring member of the thin plate shape.Type: GrantFiled: January 7, 2004Date of Patent: December 14, 2010Assignee: Tokyo Electron LimitedInventors: Shosuke Endoh, Shinji Himori
-
Publication number: 20100089323Abstract: A coating method for a internal member having holes in a vacuum processing apparatus is provided. The method includes a process (A) of filling small holes 78 of the internal member 81 with padding plugs 20 each of which has a core member 22 made from a metal material and a metal-resin composite layer 24 covering the circumferential surface of the core member 22, the metal-resin composite layer 24 being a complex consisting of a metal material and a resinous material exhibiting nonconjugative property to a coating film 80, a process (B) of forming the ceramic coating film 80 on the surface of the internal member 81 by plasma spraying after the process (A) and a process (C) of extracting the padding plugs 20 out of the holes 78 after the process (B). By this coating method, it becomes possible to solve various problems about the technique of filling the holes with the pudding plugs, so that a coating film superior in its quality performance can be produced effectively.Type: ApplicationFiled: September 3, 2009Publication date: April 15, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Jun TAKEUCHI, Masaaki Kishida, Tadakazu Matsunaga, Shosuke Endoh
-
Patent number: 7622017Abstract: A processing apparatus for performing a process on a surface of an object to be processed by applying a high frequency power to an electrode installed in an airtight processing chamber to convert a processing gas introduced therein into a plasma, includes a thermal transfer gas feed pathway for supplying a thermal transfer gas for controlling a temperature of the object to be processed to a minute space between the object to be processed and a holding unit installed on the electrode for attracting and holding the object to be processed through an inner portion of an insulating member disposed under the electrode. A portion of the thermal transfer gas feed pathway, which passes through the inner portion of the insulating member, is formed in a zigzag shape or a spiral shape with respect to a normal direction of a holding surface of the holding unit.Type: GrantFiled: June 1, 2004Date of Patent: November 24, 2009Assignee: Tokyo Electron LimitedInventors: Shinji Himori, Shosuke Endoh, Kazuya Nagaseki, Tomoya Kubota, Daisuke Hayashi
-
Patent number: 7604845Abstract: A method of forming a coating film of ceramic material on a surface of an internal member disposed in a vacuum processing apparatus, the surface of the internal member having holes formed therein. The method involves: (A) filling the holes of the internal member with padding plugs, each of which has a core member made from a metal material and a metal-resin composite layer covering the circumferential surface of the core member, the metal-resin composite layer being a complex composed of a metal material and a resinous material exhibiting nonconjugative property to a coating film; (B) forming a ceramic coating film on the surface of the internal member by plasma spraying after step (A); and (C) extracting the padding plugs out of the holes after step (B).Type: GrantFiled: September 17, 2003Date of Patent: October 20, 2009Assignee: Tokyo Electron LimitedInventors: Jun Takeuchi, Masaaki Kishida, Tadakazu Matsunaga, Shosuke Endoh
-
Publication number: 20070227663Abstract: a substrate processing apparatus that enables abnormal electrical discharges and metal contamination to be prevented from occurring. A processing chamber is configured to house and carry out predetermined plasma processing on a substrate. A lower electrode is disposed on a bottom portion of the processing chamber and has the substrate mounted thereon. An upper electrode is disposed in a ceiling portion of the processing chamber. A side wall component covering a side wall of the processing chamber faces onto a processing space between the upper electrode and the lower electrode. The side wall component has at least one electrode layer to which a DC voltage is applied. An insulating portion made of an insulating material is present at least between the electrode layer and the processing space and covers the electrode layer. The insulating portion is formed by thermally spraying the insulating material.Type: ApplicationFiled: March 27, 2007Publication date: October 4, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: Shosuke Endoh, Tsuyoshi Moriya, Akitaka Shimizu
-
Publication number: 20070187363Abstract: A substrate processing apparatus that enables a state of plasma over a substrate to be maintained in a desired state easily. A plasma processing apparatus 10 that has therein a camber 11, a stage 12, and a processing gas introducing nozzle 38 carries out etching on a wafer W. The chamber 11 houses the wafer W. The stage 12 is disposed in the chamber 11 and the wafer W is mounted thereon. The processing gas introducing nozzle 38 is a projecting body that projects out into the chamber 11, and has therein a plurality of processing gas introducing holes 56 that open out in different directions to one another.Type: ApplicationFiled: February 12, 2007Publication date: August 16, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: Hiromi OKA, Akitaka Shimizu, Shosuke Endoh, Kazuki Denpoh
-
Publication number: 20060257243Abstract: A reflecting device that enables to prevent infiltration of particles into a processing chamber. The reflecting device is disposed in a communicating pipe. The communicating pipe allows the processing chamber of a substrate processing apparatus and an exhaust pump to communicate with each other. The exhaust pump has at least one rotary blade. The reflecting device comprises at least one reflecting surface. The at least one reflecting surface is oriented to the exhausting pump.Type: ApplicationFiled: March 2, 2006Publication date: November 16, 2006Applicant: TOKYO ELECTRON LIMITEDInventors: Tsuyoshi Moriya, Takahiro Murakami, Yoshiyuki Kobayashi, Tetsuji Sato, Eiichi Sugawara, Shosuke Endoh, Masaki Fujimori
-
Publication number: 20050011456Abstract: A processing apparatus for performing a process on a surface of an object to be processed by applying a high frequency power to an electrode installed in an airtight processing chamber to convert a processing gas introduced therein into a plasma, includes a thermal transfer gas feed pathway for supplying a thermal transfer gas for controlling a temperature of the object to be processed to a minute space between the object to be processed and a holding unit installed on the electrode for attracting and holding the object to be processed through an inner portion of an insulating member disposed under the electrode. A portion of the thermal transfer gas feed pathway, which passes through the inner portion of the insulating member, is formed in a zigzag shape or a spiral shape with respect to a normal direction of a holding surface of the holding unit.Type: ApplicationFiled: June 1, 2004Publication date: January 20, 2005Applicant: TOKYO ELECTRON LIMITEDInventors: Shinji Himori, Shosuke Endoh, Kazuya Nagaseki, Tomoya Kubota, Daisuke Hayashi
-
Publication number: 20040261946Abstract: A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.Type: ApplicationFiled: April 21, 2004Publication date: December 30, 2004Applicant: TOKYO ELECTRON LIMITEDInventors: Shosuke Endoh, Noriyuki Iwabuchi, Shigeaki Kato, Tomoya Okubo, Jun Hirose, Koichi Nagakura, Chishio Koshimizu, Kazuki Denpoh
-
Publication number: 20040134618Abstract: A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is disposed on a susceptor 2, which serves to mount thereon a semiconductor wafer W and further functions as a lower electrode, to surround a periphery of the semiconductor wafer W. The focus ring 6 includes a ring member of a thin plate shape disposed to surround the periphery of the wafer W while maintaining a gap therebetween and a lower ring body installed below the semiconductor wafer and the ring member of the thin plate shape.Type: ApplicationFiled: January 7, 2004Publication date: July 15, 2004Applicant: TOKYO ELECTRON LIMITEDInventors: Shosuke Endoh, Shinji Himori
-
Publication number: 20040108066Abstract: A temperature measurement opening 30 is formed in a bottom portion of a process vessel 1 of a plasma etching apparatus, the temperature measurement opening 30 having a size not allowing a radio frequency power with a high frequency applied on a susceptor 2 to leak outside. To an external side of the temperature measurement opening 30, a radiation thermometer 31 is attached. The radiation thermometer 31 detects an infrared ray 35 emitted from the inside of a temperature measurement hole 32 formed on a rear face side of the susceptor 2 to measure the temperature of the susceptor 2.Type: ApplicationFiled: December 2, 2003Publication date: June 10, 2004Applicant: TOKYO ELECTRON LIMITEDInventors: Toshihiro Hayami, Shosuke Endoh