Abstract: There is a film forming apparatus comprising: a first holder holding a first target formed of a first material; a second holder holding a second target formed of a second material different from the first material; and a mounting table holding a substrate, the mounting table rotatable with a central axis of the mounting table as a rotation axis, wherein a distance from the central axis of the mounting table to a center of a sputter surface of the first target is different from a distance from the central axis of the mounting table to a center of a sputter surface of the second target.

Abstract: An apparatus for performing a sputtering process on a substrate is provided. The apparatus includes a processing chamber having a substrate support on which the substrate is placed, a target for emitting target particles to be adhered to the substrate by plasma formed in the processing chamber, a magnet, provided on a rear surface of the target, for adjusting a state of the plasma on the surface of the target, and a magnet moving mechanism for repeatedly moving the magnet between a position on one side and a position on the other side set across a center portion on the rear surface of the target. The apparatus further includes a collimator having two regulating plates for limiting an incident angle of the target particles to the substrate, and an arrangement position adjustment mechanism adjusting positions of the two regulating plates according to the movement of the magnet.

Abstract: There is provided a pattern forming method for forming a pattern on a substrate. The method comprises preparing on a base a substrate in which a plurality of core materials arranged in a convex shape and in a line shape, and first and second line materials arranged in a convex shape and in a line shape on one side and the other side of each of the core materials, respectively, are formed, selectively forming a mask material on any one of the first and the second line materials by a process including anisotropic film formation, by a process including etching using a line mask having a line-shaped hole at a portion corresponding to a region where line cutting is performed, etching and removing the one on which the mask material is not formed among the first and the second line materials in the region, and removing the core material.

Abstract: A sputtering apparatus includes a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, and a slit plate disposed between the first and the second targets and the substrate and having a slit unit through which the sputter particles pass. The slit unit includes a first slit to the first and the second target side and a second slit to the substrate side. The second slit has a first protrusion and a second protrusion protruding toward the center of the second slit. When the slit unit is viewed from the first target, the first protrusion is hidden. When the slit unit is viewed from the second target, the second protrusion is hidden.

Abstract: A film forming system for forming a magnetic film is provided. The film forming system includes a processing module configured to form the magnetic film on a substrate, a magnetization characteristic measuring device configured to measure magnetization characteristics of the magnetic film formed on the substrate in the processing module, and a transfer unit configured to transfer the substrate between the processing module and the magnetization characteristic measuring device. The magnetization characteristic measuring device includes a magnetic field applying mechanism having a permanent magnet magnetic circuit configured to apply a magnetic field to the substrate and adjust the magnetic field to be applied to the substrate, and a detector configured to detect magnetization characteristics of the substrate.

Abstract: A sputtering apparatus is provided. The sputtering apparatus comprises a vacuum chamber in which a substrate is located; a target having one surface facing an inner surface of the vacuum chamber; a gas supplier configured to supply a gas for generating plasma in the vacuum chamber; a power supplier configured to supply a power to the target to generate the plasma, sputter the target, and form a film on the substrate; and an abnormality detector configured to detect abnormality caused by a temperature of the target.

Abstract: There is a method for forming a film including an alloy film containing multiple types of elements on a surface of a substrate using a film forming target made of the alloy film, comprising: (a) arranging the film forming target and a distribution improvement target; and (b) forming the film on the substrate by simultaneously or alternately sputtering the film forming target and the distribution improvement target, wherein the distribution improvement target is made of a distribution improvement film containing a non-uniform element among the multiple types of elements, and in step (b), a larger amount of the non-uniform element sputtered from the distribution improvement target is supplied to a portion where the distribution amount of the non-uniform element is small compared to a portion where the distribution amount of the non-uniform element is large when the film is formed on the substrate by the film forming target.

Abstract: A sputtering apparatus includes: a processing container; a first target provided inside the processing container and formed of a first material; a second target provided inside the processing container and formed of a second material different from the first material; a stage provided inside the processing container to place a substrate thereon; a shielding plate arranged between the first target and the second target; and a controller, wherein the controller is configured to perform a process of reducing a film stress of a film formed on the shielding plate.

Abstract: A film forming apparatus includes a target holder that holds a target facing a substrate and extending in a predetermined direction on a horizontal plane, a magnet unit including a pair of magnet assemblies each having magnets and disposed at a back side of the target holder, a pair of shielding members disposed between the target and the substrate to extend from the target toward the substrate, and a moving mechanism configured to reciprocate the magnet unit between one end and the other end in the predetermined direction. The magnet assemblies are arranged along the predetermined direction, and each of the shielding members is disposed, in plan view, on a boundary line between a first region where only one of the magnet assemblies passes during a reciprocating motion of the magnet unit and a second region where both of the magnet assemblies pass therethrough during the reciprocating motion.

Abstract: A sputtering apparatus is provided. The sputtering apparatus comprises a vacuum chamber in which a substrate is located; a target having one surface facing an inner surface of the vacuum chamber; a gas supplier configured to supply a gas for generating plasma in the vacuum chamber; a power supplier configured to supply a power to the target to generate the plasma, sputter the target, and form a film on the substrate; and an abnormality detector configured to detect abnormality caused by a temperature of the target.

Abstract: A film forming apparatus is provided. The apparatus comprises a processing chamber accommodating a plurality of substrates; a plurality of substrate supporting units disposed in the processing chamber and configured to place the substrates thereon; a substrate moving mechanism configured to linearly move the substrate supporting units in a first direction; sputter particle emitting units, each having a target for emitting sputter particles into the processing chamber; and a controller configured to control the sputter particle emitting units and the substrate moving mechanism. The controller controls the substrate moving mechanism to linearly move the substrate supporting units on which the substrates are placed in the first direction and controls the sputter particle emitting units to emit sputter particles to be deposited on the substrates.

Abstract: There is provided a pattern forming method for forming a pattern on a substrate. The method comprises preparing on a base a substrate in which a plurality of core materials arranged in a convex shape and in a line shape, and first and second line materials arranged in a convex shape and in a line shape on one side and the other side of each of the core materials, respectively, are formed, selectively forming a mask material on any one of the first and the second line materials by a process including anisotropic film formation, by a process including etching using a line mask having a line-shaped hole at a portion corresponding to a region where line cutting is performed, etching and removing the one on which the mask material is not formed among the first and the second line materials in the region, and removing the core material.

Abstract: A sputtering apparatus includes a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, and a slit plate disposed between the first and the second targets and the substrate and having a slit unit through which the sputter particles pass. The slit unit includes a first slit to the first and the second target side and a second slit to the substrate side. The second slit has a first protrusion and a second protrusion protruding toward the center of the second slit. When the slit unit is viewed from the first target, the first protrusion is hidden. When the slit unit is viewed from the second target, the second protrusion is hidden.

Abstract: An apparatus for performing a sputtering process on a substrate is provided. The apparatus includes a processing chamber having a substrate support on which the substrate is placed, a target for emitting target particles to be adhered to the substrate by plasma formed in the processing chamber, a magnet, provided on a rear surface of the target, for adjusting a state of the plasma on the surface of the target, and a magnet moving mechanism for repeatedly moving the magnet between a position on one side and a position on the other side set across a center portion on the rear surface of the target. The apparatus further includes a collimator having two regulating plates for limiting an incident angle of the target particles to the substrate, and an arrangement position adjustment mechanism adjusting positions of the two regulating plates according to the movement of the magnet.

Abstract: There is provided a substrate processing method of a substrate processing apparatus. The substrate processing apparatus includes at least two targets, magnet-moving mechanisms disposed in one-to-one correspondence with the at least two targets, each of the magnet-moving mechanisms being configured to reciprocate a magnet in a first direction on a back surface of each target, and a substrate moving mechanism configured to move a substrate in a second direction orthogonal to the first direction. The method includes causing the magnet-moving mechanisms to reciprocate the magnets at different phases with each other.

Abstract: An example of a sputtering apparatus comprises a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, a shielding plate disposed between the first and the second target and the substrate and having a through-hole through which the sputter particles pass, and an obstructing mechanism. The through-hole has a first opening region through which the sputter particles emitted from the fit target pass and a second opening region through which the sputter particles emitted from the second target pass, and the obstructing mechanism is configured to obstruct the sputter particles emitted from the first target in passing through the second opening region and the sputter particles emitted in the second target from passing through the first opening region.

Abstract: A film forming apparatus includes a target holder that holds a target facing a substrate and extending in a predetermined direction on a horizontal plane, a magnet unit including a pair of magnet assemblies each having magnets and disposed at a back side of the target holder, a pair of shielding members disposed between the target and the substrate to extend from the target toward the substrate, and a moving mechanism configured to reciprocate the magnet unit between one end and the other end in the predetermined direction. The magnet assemblies are arranged along the predetermined direction, and each of the shielding members is disposed, in plan view, on a boundary line between a first region where only one of the magnet assemblies passes during a reciprocating motion of the magnet unit and a second region where both of the magnet assemblies pass therethrough during the reciprocating motion.

Abstract: A film forming system for forming a magnetic film is provided. The film forming system includes a processing module configured to form the magnetic film on a substrate, a magnetization characteristic measuring device configured to measure magnetization characteristics of the magnetic film formed on the substrate in the processing module, and a transfer unit configured to transfer the substrate between the processing module and the magnetization characteristic measuring device. The magnetization characteristic measuring device includes a magnetic field applying mechanism having a permanent magnet magnetic circuit configured to apply a magnetic field to the substrate and adjust the magnetic field to be applied to the substrate, and a detector configured to detect magnetization characteristics of the substrate.

Abstract: There is provided a hard mask formed on a substrate for manufacturing a semiconductor device, the hard mask including a film made of a compound which is composed of Ru and an element selected from Ti, Zr, Hf, V, Nb, Ta, Mo, W, and Si.

Abstract: A semiconductor memory device having one embodiment which includes a substrate; a stacked body provided on the substrate and including a plurality of electrode layers separately stacked; a first upper layer gate provided on the stacked body; an interlayer insulating layer provided on the first upper layer gate; an insulating part continuously provided from the first upper layer gate to the substrate and extending in a first direction parallel to a major surface of the substrate; a second upper layer gate; a semiconductor part; a charge storage film; and a semiconductor layer provided from an upper end of the semiconductor part to a portion of the semiconductor part reaching the second upper layer gate. The second upper layer gate is provided on the interlayer insulating layer and the insulating part, and extends on a first surface parallel to the major surface.