Abstract: Disclosed is a chip scale package of image sensor having a dam combination, comprising an image sensor chip, a dam combination, a transparent lid disposed on the dam combination, and a plurality of external terminals disposed on the backside of the chip. An image sensing area is formed on the active surface of the image sensor chip. A dam combination consists essentially of at least two dam parts and has an image sensing window. The peripheries of the image sensor window are formed by a pre-formed dam part and are adjacent to the image sensing area with horizontal spacing not greater than 200 ?m. There is a combination interface between the two dam parts. The combination interface and the post-formed dam part are far away from the image sensing area than the pre-formed dam part to keep residues caused by the disposition of the pre-formed dam part to be away from the 200 ?m exclusive region around the image sensing area.

Abstract: Disclosed is a chip scale package of image sensor having a dam combination, comprising an image sensor chip, a dam combination, a transparent lid disposed on the dam combination, and a plurality of external terminals disposed on the backside of the chip. An image sensing area is formed on the active surface of the image sensor chip. A dam combination consists essentially of at least two dam parts and has an image sensing window. The peripheries of the image sensor window are formed by a pre-formed dam part and are adjacent to the image sensing area with horizontal spacing not greater than 200 ?m. There is a combination interface between the two dam parts. The combination interface and the post-formed dam part are far away from the image sensing area than the pre-formed dam part to keep residues caused by the disposition of the pre-formed dam part to be away from the 200 ?m exclusive region around the image sensing area.

Abstract: Disclosed is a MPS-C2 (Metal Post Soldering Chip Connection) semiconductor device having shorter supporting posts. Bonding pads are reentrant from a wafer-level packaging (WLP) layer formed on the active surface. A patterned UBM metal layer includes a plurality of UBM pads disposed on the bonding pads and at least a UBM island disposed on the WLP layer. The island area of the UBM island on the WLP layer is at least four times larger than the unit area of the UBM pads. A plurality of I/O pillars are one-to-one disposed on the UBM pads by plating and a plurality of supporting pillars are many-to-one disposed on the UBM island by one plating process. The unit footprint of the supporting pillars on the UBM island is smaller than the unit footprint of the I/O pillars on the UBM pads so as to compensate the height difference between the top jointing surfaces of the supporting pillars and the I/O pillars.

Abstract: Disclosed are a flip-chip carrier having individual pad masks (IPMs) and a fabricating method of a MPS-C2 package utilized from the same. The flip-chip carrier primarily comprises a substrate and a plurality of the IPMs. The substrate has a top surface and a plurality of connecting pads on the top surface. The IPMs cover the corresponding connecting pads in one-on-one alignment where each IPM consists of a photo-sensitive adhesive layer on the corresponding connecting pad and a pick-and-place body pervious to light formed on the photo-sensitive adhesive layer. After the photo-sensitive adhesive layers are irradiated by light penetrating through the pick-and-place bodies, the pick-and-place bodies can be pulled out by a pick-and-place process to expose the connecting pads from an encapsulant. The issues of solder bridging and package warpage can easily be solved in conventional MPS-C2 packages.

Abstract: Disclosed is a fine-pitch pillar bump layout structure on chip, comprising a chip, a passivation layer and at least two pillar bumps. Bonding pads of the chip are disposed along an X-axis. Openings of the passivation layer have a first aspect ratio. Pillar bumps are disposed on the bonding pads and each has a pillar body and a solder cap. Each pillar body has a plurality of symmetrical raised blocks disposed on the passivation layer and extended in both directions of Y-axis. The pillar bodies have shrunk bump widths along the X-axis so that a second aspect ratio is at least 1.5 times greater than the first aspect ratio and to partially expose the bonding pads and to make the central points of the pillar bodies be vertically aligned with the central points of the openings of the passivation layer.

Abstract: Disclosed are a flip-chip carrier having individual pad masks (IPMs) and a fabricating method of a MPS-C2 package utilized from the same. The flip-chip carrier primarily comprises a substrate and a plurality of the IPMs. The substrate has a top surface and a plurality of connecting pads on the top surface. The IPMs cover the corresponding connecting pads in one-on-one alignment where each IPM consists of a photo-sensitive adhesive layer on the corresponding connecting pad and a pick-and-place body pervious to light formed on the photo-sensitive adhesive layer. After the photo-sensitive adhesive layers are irradiated by light penetrating through the pick-and-place bodies, the pick-and-place bodies can be pulled out by a pick-and-place process to expose the connecting pads from an encapsulant. The issues of solder bridging and package warpage can easily be solved in conventional MPS-C2 packages.

Abstract: A method for manufacturing a chip package includes exposing a ground ring out of encapsulating material in a direct or indirect way and forming a conductive film electrically connected to the ground ring so as to form an EMI shield and prevent external EMI. The present invention also massively forms conductive film for package structure for lowering the complexity and cost of manufacturing processes.