Abstract: Semiconductor device structures having dielectric features and methods of forming dielectric features are described herein. In some examples, the dielectric features are formed by an ALD process followed by a varying temperature anneal process. The dielectric features can have high density, low carbon concentration, and lower k-value. The dielectric features formed according to the present disclosure has improved resistance against etching chemistry, plasma damage, and physical bombardment in subsequent processes while maintaining a lower k-value for target capacitance efficiency.

Abstract: An embodiment is a device including a first fin extending from a substrate, a first gate stack over and along sidewalls of the first fin, a first gate spacer disposed along a sidewall of the first gate stack, a first epitaxial source/drain region in the first fin and adjacent the first gate spacer, the first epitaxial source/drain region, and a protection layer between the first epitaxial source/drain region and the first gate spacer and between the first gate spacer and the first gate stack.

Abstract: Semiconductor device structures having low-k features and methods of forming low-k features are described herein. Some examples relate to a surface modification layer, which may protect a low-k feature during subsequent processing. Some examples relate to gate spacers that include a low-k feature. Some examples relate to a low-k contact etch stop layer. Example methods are described for forming such features.

Abstract: An embodiment is a device including a first fin extending from a substrate, a first gate stack over and along sidewalls of the first fin, a first gate spacer disposed along a sidewall of the first gate stack, a first epitaxial source/drain region in the first fin and adjacent the first gate spacer, the first epitaxial source/drain region, and a protection layer between the first epitaxial source/drain region and the first gate spacer and between the first gate spacer and the first gate stack.

Abstract: A knot may be formed in suture material using a device having an elongated body with a longitudinal axis and a holder. A rail portion of the suture material is secured with a first grasper on the elongated body and a non-rail portion of the suture material is secured with a second grasper on the holder. A plurality of helical windings may be created with the non-rail portion. Detaching the holder from the elongated body in a motion away from the longitudinal axis of the elongated body completes the knot. The holder may be wrapped around the elongated body in a knot-forming pattern.

Abstract: Semiconductor device structures having low-k features and methods of forming low-k features are described herein. Some examples relate to a surface modification layer, which may protect a low-k feature during subsequent processing. Some examples relate to gate spacers that include a low-k feature. Some examples relate to a low-k contact etch stop layer. Example methods are described for forming such features.

Abstract: A factory management system and control system are provided. The factory management system includes: a machine; multiple sensors disposed corresponding to the machine and generates multiple first sensing data; a server; and a control system coupled to the machine and the server. The control system receives the first sensing data to generate multiple corresponding control commands in real time and transmits the control commands to the machine. The control system receives a user login message and receives multiple second sensing data and displays the second sensing data in a user login status. The control system receives a user control command and transmits a second control command corresponding to the user control command to the machine. When the control system determines that an abnormal condition occurs according to the second sensing data in the user login status, the control system sends a warning message.

Abstract: Disclosed is a negative dielectric anisotropic liquid crystal compound represented by Formula (I): wherein R1, R2, R3, and n are as defined herein. A process for preparing the negative dielectric anisotropic liquid crystal compound, a negative dielectric anisotropic liquid crystal composition including the negative dielectric anisotropic liquid crystal compound, and use of the negative dielectric anisotropic liquid crystal compound are also disclosed.

Abstract: A sealing film indenting device includes an indentation cutter pad, a movable rod movable relative to the indentation cutter pad along a moving axis, an indentation cutter mounted to the movable rod, and a drive unit. The drive unit is coupled to the movable rod for driving the movable rod to move along the moving axis between a standby position where a film lidding receiving space defined between the indentation cutter and the indentation cutter pad for receiving a film lidding to be indented, and an indentation cutting position where the indentation cutter moved toward the indentation cutter pad across the film lidding to cut indentations on the film lidding.

Abstract: Semiconductor device structures having dielectric features and methods of forming dielectric features are described herein. In some examples, the dielectric features are formed by an ALD process followed by a varying temperature anneal process. The dielectric features can have high density, low carbon concentration, and lower k-value. The dielectric features formed according to the present disclosure has improved resistance against etching chemistry, plasma damage, and physical bombardment in subsequent processes while maintaining a lower k-value for target capacitance efficiency.

Abstract: An antenna device is provided. The antenna device includes a first substrate, a multilayer electrode, a second substrate, and a liquid-crystal layer. The multilayer electrode is disposed on the first substrate, and the multilayer electrode includes a first conductive layer, a second conductive layer, and a third conductive layer. The second conductive layer is disposed on the first conductive layer. The third conductive layer is disposed on the second conductive layer. The liquid-crystal layer is disposed between the first substrate and the second substrate. In addition, the third conductive layer includes a first portion that extends beyond the second conductive layer.

Abstract: A fluid dispensing device includes a housing unit, a storage unit and a discharge module that are disposed within the housing unit. A weighing module includes weighing sensors. Each weighing sensor has an attachment portion attached to a bottom wall of the housing unit, and an abutment portion disposed below the bottom wall oppositely to the attachment portion. A control module controls the discharge module to dispense predetermined amount of fluid outside of the housing unit. The control module is able to determine whether a weight of fluid in the storage unit is smaller than a predetermined value according to a weight of the housing unit measured by the weighing sensors.

Abstract: An embodiment is a device including a first fin extending from a substrate, a first gate stack over and along sidewalls of the first fin, a first gate spacer disposed along a sidewall of the first gate stack, a first epitaxial source/drain region in the first fin and adjacent the first gate spacer, the first epitaxial source/drain region, and a protection layer between the first epitaxial source/drain region and the first gate spacer and between the first gate spacer and the first gate stack.

Abstract: Semiconductor device structures having dielectric features and methods of forming dielectric features are described herein. In some examples, the dielectric features are formed by an ALD process followed by a varying temperature anneal process. The dielectric features can have high density, low carbon concentration, and lower k-value. The dielectric features formed according to the present disclosure has improved resistance against etching chemistry, plasma damage, and physical bombardment in subsequent processes while maintaining a lower k-value for target capacitance efficiency.

Abstract: A liquid crystal composition includes at least one polar compound represented by Formula (I), at least one polar compound represented by Formula (II), at least one compound represented by Formula (III), and at least one compound represented by Formula (IV), in which Formulae (I) to (IV) are as defined herein.

Abstract: A liquid crystal composition includes at least one polar compound represented by Formula (I), at least one polar compound represented by Formula (II), at least one compound represented by Formula (III), at least one compound represented by Formula (IV), and at least one compound represented by Formula (V), in which Formulae (I) to (V) are as defined herein.

Abstract: An automatic temperature regulation device for a vehicle passenger space. A flexible solar panel (2) is arranged on the roof (10) of a vehicle (1); solar energy is used for charging a vehicle battery (11) or a special battery (4), and an isolation cooling effect is generated; and when the vehicle is stopped for a long time, the temperature in the passenger space is detected by a temperature detection element (3) of an electric control system (14), and a vehicle air conditioning system (13) of an internal combustion engine vehicle or a pure electric vehicle is timely started by the vehicle electric control system to operate, or only the fan of the vehicle air conditioning system (13) operates, so as to regulate the temperature in the vehicle passenger space and achieve a cooling effect, thus a driver who enters the vehicle passenger space will not suffer from high temperature.

Abstract: Semiconductor device structures having low-k features and methods of forming low-k features are described herein. Some examples relate to a surface modification layer, which may protect a low-k feature during subsequent processing. Some examples relate to gate spacers that include a low-k feature. Some examples relate to a low-k contact etch stop layer. Example methods are described for forming such features.

Abstract: Semiconductor device structures having dielectric features and methods of forming dielectric features are described herein. In some examples, the dielectric features are formed by an ALD process followed by a varying temperature anneal process. The dielectric features can have high density, low carbon concentration, and lower k-value. The dielectric features formed according to the present disclosure has improved resistance against etching chemistry, plasma damage, and physical bombardment in subsequent processes while maintaining a lower k-value for target capacitance efficiency.