Abstract: A method for forming a chip package structure. The method includes dicing a semiconductor wafer from a rear surface of the semiconductor wafer to form first and second semiconductor dies. A first sidewall of the first semiconductor die faces a second sidewall of the second semiconductor die after the semiconductor wafer. The method also includes mounting first and second semiconductor dies over an interposer substrate. The first sidewall faces the second sidewall. A lateral distance from a top end of the first sidewall to a top end of the second sidewall is greater than a lateral distance from a bottom end of the first sidewall to a bottom end of the second sidewall.

Abstract: A semiconductor device package is provided, including a substrate, a semiconductor device, a ring structure, a lid structure, and at least one adhesive member. The semiconductor device is disposed over the substrate. The ring structure is disposed over the substrate and surrounds the semiconductor device. The ring structure comprises a first ring part and a second ring part on opposite sides of the semiconductor device. A first gap is formed between the first ring part and the semiconductor device, a second gap is formed between the second ring part and the semiconductor device, and the first gap is smaller than the second gap. The lid structure is disposed over the ring structure and extends across the semiconductor device. The adhesive member is disposed in the first gap and configured to connect the lid structure and the first surface of the substrate.

Abstract: A chip package structure is provided. The chip package structure includes a wiring substrate. The chip package structure includes a chip package over the wiring substrate. The chip package structure includes a first heat conductive structure over the chip package. The chip package structure includes a ring dam over the chip package and surrounding the first heat conductive structure. The ring dam has a gap. The chip package structure includes a heat dissipation lid over the first heat conductive structure and the ring dam.

Abstract: A package assembly includes a package substrate, a solder resist layer on the package substrate and including an elongated solder resist opening, and an interposer module on the package substrate and including a corner located on the elongated solder resist opening.

Abstract: A semiconductor device includes a first semiconductor die, a second semiconductor die and a package lid. The package lid is disposed over the first semiconductor die and the second semiconductor die. The package lid includes a roof and an island. The roof extends along a first direction and a second direction perpendicular to the first direction and includes a first portion and a second portion. The island protrudes from the first portion of the roof, wherein the island covers and is thermally connected to the first semiconductor die, and the second portion of the roof covers and is physically separated from the second semiconductor die.

Abstract: A semiconductor package provided herein includes a wiring substrate, a semiconductor component, conductor terminals, a bottom stiffener and a top stiffener. The wiring substrate has a first surface and a second surface opposite to the first surface. The semiconductor component is disposed on the first surface of the wiring substrate. The conductor terminals are disposed on the second surface of the wiring substrate and electrically connected to the semiconductor component through the wiring substrate. The bottom stiffener is disposed on the second surface of the wiring substrate and positioned between the conductor terminals. The top stiffener is disposed on the first surface of the wiring substrate. The top stiffener is laterally spaced further away from the semiconductor component than the bottom stiffener.

Abstract: An organic interposer includes dielectric material layers embedding redistribution interconnect structures, package-side bump structures located on a first side of the dielectric material layers, and die-side bump structures located on a second side of the dielectric material layers. A gap region is present between a first area including first die-side bump structures and a second area including second die-side bump structures. Stress-relief line structures are located on, or within, the dielectric material layers within an area of the gap region in the plan view. Each stress-relief line structures may include straight line segments that laterally extend along a respective horizontal direction and is not electrically connected to the redistribution interconnect structures. The stress-relief line structures may include the same material as, or may include a different material from, a metallic material of the redistribution interconnect structures or bump structures that are located at a same level.

Abstract: A chip package structure is provided. The chip package structure includes a molding compound layer on an interposer substrate. The chip package structure also includes a first semiconductor die over the interposer substrate and surrounded by the molding compound layer. The chip package structure further includes a warpage release layer structure. The warpage release layer structure includes a first organic material layer on the first semiconductor die and the molding compound layer. The warpage release layer structure also includes a first metal layer over the first organic material layer. The first metal layer exposes a portion of a top surface of the first organic material layer.

Abstract: A semiconductor package and a method of forming the same are provided. The semiconductor package includes a package substrate and a semiconductor device mounted on the surface of the package substrate. A first ring is disposed over the surface of the package substrate and surrounds the semiconductor device. A second ring is disposed over the top surface of the first ring. Also, a protruding part and a matching recessed part are formed on the top surface of the first ring and the bottom surface of the second ring, respectively. The protruding part extends into and engages with the recessed part to connect the first ring and the second ring. An adhesive layer is disposed between the surface of the package substrate and the bottom surface of the first ring for attaching the first ring and the overlying second ring to the package substrate.

Abstract: A semiconductor package includes a package substrate; semiconductor devices disposed on the package substrate; a package ring disposed on a perimeter of package substrate surrounding the semiconductor devices; a cover disposed over the package ring and the semiconductor devices; a cover adhesive bonding the cover to the package ring; and a stress-reduction structure including first channels formed in an upper surface of the package ring and second channels formed in a lower surface of a portion of the cover that overlaps with the first channels.

Abstract: A method includes forming a first dielectric layer, forming a first redistribution line including a first via extending into the first dielectric layer, and a first trace over the first dielectric layer, forming a second dielectric layer covering the first redistribution line, and patterning the second dielectric layer to form a via opening. The first redistribution line is revealed through the via opening. The method further includes depositing a conductive material into the via opening to form a second via in the second dielectric layer, and a conductive pad over and contacting the second via, and forming a conductive bump over the conductive pad. The conductive pad is larger than the conductive bump, and the second via is offset from a center line of the conductive bump.

Abstract: A package structure is provided. The package structure includes a substrate having interior sidewalls forming a recess. The interior sidewalls have an upper sidewall, a lower sidewall, and an intermediate sidewall. The intermediate sidewall is between the upper sidewall and the lower sidewall. The upper sidewall, the lower sidewall, and the intermediate sidewall have different slopes. The package structure also includes a chip-containing structure over the substrate. A component of the chip-containing structure is partially or completely surrounded by the interior sidewalls.

Abstract: A package assembly includes a package substrate, an interposer module on the package substrate, and a package lid on the interposer module and attached to the package substrate. The package lid includes an outer lid including an outer lid material and including an outer lid plate portion. The package lid further includes an inner lid including an inner lid material different than the outer lid material and including an inner lid plate portion attached to a bottom surface of the outer lid plate portion.

Abstract: A package assembly includes a package substrate, a package lid located on the package substrate and including a plate portion, an outer foot extending from the plate portion, and an inner foot having a height greater than or equal to a height of the outer foot, extending from the plate portion and including a first inner foot corner portion located inside a first corner of the outer foot, and an adhesive that adheres the outer foot to the package substrate and adheres the inner foot to the package substrate.

Abstract: A package structure includes a circuit substrate, a semiconductor device and a ring structure. The circuit substrate has a first region and a second region connected thereto. The circuit substrate includes at least one routing layer including a dielectric portion and a conductive portion disposed thereon. A first ratio of a total volume of the conductive portion of the routing layer within the first region to a total volume of the dielectric and conductive portions of the routing layer within the first region is less than a second ratio of a total volume of the conductive portion of the routing layer within the second region to a total volume of the dielectric and conductive portions of the routing layer within the second region. The semiconductor device is disposed over the circuit substrate within the first region, and is electrically coupled to the circuit substrate. The ring structure is disposed over the circuit substrate within the second region.

Abstract: A semiconductor structure includes: a substrate; a package attached to a first surface of the substrate, where the package includes: an interposer, where a first side of the interposer is bonded to the first surface of the substrate through first conductive bumps; dies attached to a second side of the interposer opposing the first side; and a molding material on the second side of the interposer around the dies; a plurality of thermal interface material (TIM) films on a first surface of the package distal from the substrate, where each of the TIM films is disposed directly over at least one respective die of the dies; and a heat-dissipation lid attached to the first surface of the substrate, where the package and the plurality of TIM films are disposed in an enclosed space between the heat-dissipation lid and the substrate, where the heat-dissipation lid contacts the plurality of TIM films.

Abstract: A chip package includes a substrate, a semiconductor chip, and a thermal conductive structure. The chip package includes a first and a second support structures below the thermal conductive structure. The first and the second support structures connect the substrate and corners of the thermal conductive structure. The thermal conductive structure has a side edge connecting the first and the second support structures. The first and the second support structures and the side edge together define of an opening exposing a space surrounding the semiconductor chip. The first and the second support structures are disposed along a side of the substrate. The first support structure is laterally separated from the side of the substrate by a first lateral distance. The side edge of the thermal conductive structure is laterally separated from the side of the substrate by a second lateral distance different than the first lateral distance.

Abstract: An semiconductor package includes a redistribution structure, a first semiconductor device, a second semiconductor device, an underfill layer and an encapsulant. The first semiconductor device is disposed on and electrically connected with the redistribution structure, wherein the first semiconductor device has a first bottom surface, a first top surface and a first side surface connecting with the first bottom surface and the first top surface, the first side surface comprises a first sub-surface and a second sub-surface connected with each other, the first sub-surface is connected with the first bottom surface, and a first obtuse angle is between the first sub-surface and the second sub-surface.

Abstract: A chip package structure is provided. The chip package structure includes a first semiconductor die bonded over an interposer substrate and a warpage release layer structure. The chip package structure also includes a first organic material layer covering an upper surface of the first semiconductor die; and a first metal layer covering an upper surface of the first organic material layer. The first metal layer has a planar shape that is the same as a planar shape of the first semiconductor die, as viewed in a top-view perspective.

Abstract: A semiconductor package is provided, which includes a first chip disposed over a first package substrate, a molding compound surrounding the first chip, a first thermal interface material disposed over the first chip and the molding compound, a heat spreader disposed over the thermal interface material, and a second thermal interface material disposed over the heat spreader. The first thermal interface material and the second thermal interface material have an identical width.