Abstract: The invention provides a layout pattern of static random-access memory (SRAM), which comprises a substrate, wherein a plurality of diffusion regions and a plurality of gate structures are located on the substrate to form a plurality of transistors, wherein the plurality of gate structures comprise a first gate structure, which has a stepped shape when viewed from a top view, and the first gate structure spans a first diffusion region and a second diffusion region to form a first access transistor (PG1), wherein the first diffusion region is adjacent to and in direct contact with the second diffusion region.

Abstract: A gas shield protection device for thermal spraying includes a spraying member and a gas shield generation device. The spraying member includes a nozzle and a shield body disposed on the nozzle. The nozzle is configured to align with one of a plurality of workpieces on a worktable. The gas shield generation device is configured to align with the worktable and includes a housing and a second gas ejection portion. The housing has a gas passageway therein. The second gas ejection portion has at least one gas ejection port intercommunicating with the gas passageway. The at least one gas ejection port is configured to face the plurality of workpieces, such that an area of a gas shield ejected from the at least one gas ejection port of the second gas ejection portion covers the plurality of workpieces. Thus, oxidation of the coating on the workpiece can be avoided.

Abstract: An interconnection structure and a manufacturing method thereof are provided. The interconnection structure includes a first dielectric layer, a first conductive feature, a second dielectric layer, and a barrier layer. The first conductive feature is disposed on the first dielectric layer, the second dielectric layer is disposed on the first dielectric layer and surrounds the sidewalls of the first conductive feature, the barrier layer is disposed between the first dielectric layer and the second dielectric layer and between the sidewalls of the first conductive feature and the second dielectric layer.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first low dielectric constant (low-k) layer, a first metal layer, a metal cap layer, a dielectric on dielectric (DoD) layer, an etch stop layer (ESL), a second low-k layer, a metal via and a second metal layer. The dielectric constant of the first low-k layer is less than 4. The first metal layer is embodied in the first low-k layer. The first low-k layer exposes the first metal layer. The metal cap layer is disposed on the first metal layer. The DoD layer is disposed on the first low-k layer. The etch stop layer is disposed on the metal cap layer and the DoD layer. The second low-k layer is disposed above the etch stop layer. The metal via is embodied in the second low-k layer and connected to the first metal layer.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A curable composition includes an epoxy monomer component and an aniline-based hardener. The epoxy monomer component is a first component formed from a first epoxy monomer represented by Formula (I), or a second component including the first epoxy monomer represented by Formula (I) and a second epoxy monomer different from the first epoxy monomer represented by Formula (I), wherein each of the substituents in Formula (I) is given the definitions as set forth in the Specification and Claims. Based on 100 wt % of the epoxy monomer component, an amount of the first epoxy monomer represented by Formula (I) is not smaller than 25 wt % and less than 100 wt % and an amount of the second epoxy monomer is greater than 0% and not greater than 75 wt %. A cured product formed from the curable composition, and a method for encapsulating a semiconductor device using the curable composition are also provided.

Abstract: A method of performing power saving control on a display device includes: generating, by a timing controller of the display device, a power saving start indication and a power saving end indication in response to changing of a refresh rate of the display device; receiving, by a source driver of the display device, the power saving start indication and the power saving end indication; in response to the power saving start indication, allowing a part of circuitry of the source driver to be powered down during a vertical blanking interval; and in response to the power saving end indication, allowing the powered down part of circuitry of the source driver to be woken up during the vertical blanking interval.

Abstract: A method of performing power saving control on a display device includes: generating, by a timing controller of the display device, a power saving start indication and a power saving end indication in response to changing of a refresh rate of the display device; receiving, by a source driver of the display device, the power saving start indication and the power saving end indication; in response to the power saving start indication, allowing a part of circuitry of the source driver to be powered down during a vertical blanking interval; and in response to the power saving end indication, allowing the powered down part of circuitry of the source driver to be woken up during the vertical blanking interval.

Abstract: A digital compute-in-memory (DCIM) system includes a first DCIM macro. The first DCIM macro includes a first memory cell array and a first arithmetic logic unit (ALU). The first memory cell array has N rows that are configured to store weight data of a neural network in a single weight data download session, wherein N is a positive integer not smaller than two. The first ALU is configured to receive a first activation input, and perform convolution operations upon the first activation input and a single row of weight data selected from the N rows of the first memory cell array to generate first convolution outputs.

Abstract: A digital compute-in-memory (DCIM) macro includes a memory cell array and an arithmetic logic unit (ALU). The memory cell array stores weight data of a neural network. The ALU receives parallel bits of a same input channel in an activation input, and generates a convolution computation output of the parallel bits and target weight data in the memory cell array.

Abstract: A heat dissipation assembly is disclosed and includes a fan, a vapor chamber and a heat dissipation fin set. The fan includes a fan frame, an impeller and a fan cover. The impeller is disposed on the fan frame and accommodated in an accommodation space. The impeller includes plural metal blades and a hub, and the plural metal blades are radially arranged on the periphery of the hub to form a dense-metal-blade impeller. The fan cover is assembled with the fan frame to form an outlet, and the fan cover includes an inlet. The vapor chamber includes an upper plate and a lower plate assembled with each other. The upper plate or the lower plate is connected to the fan cover, and the vapor chamber and the fan cover are coplanar. The heat dissipation fin set is connected to the lower plate and spatially corresponding to the outlet.

Abstract: A high electron mobility transistor (HEMT) includes a substrate, a channel layer, a barrier layer and a passivation layer. A contact structure is disposed on the passivation layer and extends through the passivation layer and the barrier layer to directly contact the channel layer. The contact structure includes a metal layer, and the metal layer includes a metal material doped with a first additive. A weight percentage of the first additive in the metal layer is between 0% and 2%.

Abstract: A display panel includes a substrate, first, second, and third data lines, scan lines, a first active device, a second active device, and pixel electrodes. The first and the third data lines have a first polarity. The second data line has a second polarity. The first polarity is different from the second polarity. A source electrode of the first active device disposed between the first data line and the second data line is electrically connected to the first data line. An extension region of the semiconductor pattern of the first active device extends toward and overlaps the second data line. A source electrode of the second active device disposed between the second data line and the third data line is electrically connected to the second data line. An extension region of the semiconductor pattern of the second active device extends toward and overlaps the third data line.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A time-to-frequency converter transforms an initial single-photon pulse into a transformed pulse such that the temporal waveform of the initial pulse is mapped to the spectrum of the transformed pulse. The time-to-frequency converter includes a dispersive optical element followed by a time lens. The spectrum of the transformed pulse is then measured to determine the arrival time of the initial pulse. The spectrum can be measured using a photon-counting spectrometer that spatially disperses the transformed pulse onto an single-photon detector array. Alternatively, an additional dispersive element can be used with the time-to-frequency converter to implement a time magnifier. The arrival time of the resulting time-magnified pulse can then be measured using time-correlated single-photon counting. This arrival time can then be divided by the magnification factor of the time magnifier to obtain the arrival time of the initial pulse.

Abstract: A dual-comb measuring system is provided. The dual comb measuring system may include a bi-directional mode-locked femtosecond laser, a high-speed rotation stage, and a fiber coupler. The high-speed rotation stage may be coupled to a pump diode.

Abstract: A device is provided. The device includes an external screw includes a first channel extending along a longitudinal axis, and the first channel including a first inner side including at least one protrusion; and an internal screw includes a first pushing rod section including a first threaded section and at least one groove, the at least one groove is configured to accommodate the at least one protrusion of the first inner side, and the first pushing rod section is configured to slide within the first channel along the longitudinal axis.

Abstract: A time-to-frequency converter transforms an initial single-photon pulse into a transformed pulse such that the temporal waveform of the initial pulse is mapped to the spectrum of the transformed pulse. The time-to-frequency converter includes a dispersive optical element followed by a time lens. The spectrum of the transformed pulse is then measured to determine the arrival time of the initial pulse. The spectrum can be measured using a photon-counting spectrometer that spatially disperses the transformed pulse onto an single-photon detector array. Alternatively. an additional dispersive element can be used with the time-to-frequency converter to implement a time magnifier. The arrival time of the resulting time-magnified pulse can then be measured using time-correlated single-photon counting. This arrival time can then be divided by the magnification factor of the time magnifier to obtain the arrival time of the initial pulsc.

Abstract: A dual-comb measuring system is provided. The dual comb measuring system may include a bi-directional mode-locked femtosecond laser, a high-speed rotation stage, and a fiber coupler. The high-speed rotation stage may be coupled to a pump diode.