Patents by Inventor Shu-Wei Yeh

Shu-Wei Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180006038
    Abstract: A layout pattern of a static random access memory includes a pull-up device, a first pull-down device, a second pull-up device, a second pull-down device, a first pass gate device, a second pass gate device, a third pass gate device and a fourth pass gate device disposed on a substrate. A plurality of fin structures is disposed on the substrate, the fin structures including at least one first fin structure and at least one second fin structure. A step-shaped structure is disposed on the substrate, including a first part, a second part and a bridge part. A first extending contact feature crosses over the at least one first fin structure and the at least one second fin structure.
    Type: Application
    Filed: August 22, 2017
    Publication date: January 4, 2018
    Inventors: Shu-Wei Yeh, Tsung-Hsun Wu, Chih-Ming Su, Zhi-Xian Chou
  • Publication number: 20170323894
    Abstract: A layout pattern of a static random access memory includes a pull-up device, a first pull-down device, a second pull-up device, a second pull-down device, a first pass gate device and a second pass gate device disposed on a substrate. A plurality of fin structures are disposed on the substrate, and the fin structures include at least one first fin structure and at least one second fin structure. A J-shaped gate structure is disposed on the substrate, including a long part, a short part and a bridge part. At least one first extending contact structure crosses over the at least one first fin structure and the at least one second fin structure, wherein the at least one first extending contact structure does not overlap with the bridge part of the J-shaped gate structure.
    Type: Application
    Filed: June 20, 2016
    Publication date: November 9, 2017
    Inventors: Shu-Wei Yeh, Tsung-Hsun Wu, Chih-Ming Su, Yu-Tse Kuo
  • Patent number: 9780099
    Abstract: A layout pattern of a static random access memory includes a pull-up device, a first pull-down device, a second pull-up device, a second pull-down device, a first pass gate device, a second pass gate device, a third pass gate device and a fourth pass gate device disposed on a substrate. A plurality of fin structures is disposed on the substrate, the fin structures including at least one first fin structure and at least one second fin structure. A step-shaped structure is disposed on the substrate, including a first part, a second part and a bridge part. A first extending contact feature crosses over the at least one first fin structure and the at least one second fin structure.
    Type: Grant
    Filed: August 11, 2016
    Date of Patent: October 3, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shu-Wei Yeh, Tsung-Hsun Wu, Chih-Ming Su, Zhi-Xian Chou
  • Publication number: 20110221558
    Abstract: A coil of a transformer has two side conducting brackets and at least one middle conducting bracket. The middle conducting bracket is elongated or spiral-shaped and has two terminals respectively connected to the side conducting brackets. The side conducting brackets and the at least one middle conducting bracket of some specific type are connected to form different numbers of loops or different types of circuits (series circuits or parallel circuits). Therefore, design and fabrication of the coil is flexible and materials and manufacturing costs are saved. Moreover, the side conducting brackets and the at least one middle conducting bracket require only two or four soldered joints so number of soldered joints required is limited and efficiency of the transformer is improved.
    Type: Application
    Filed: February 25, 2011
    Publication date: September 15, 2011
    Applicant: ACBEL POLYTECH INC.
    Inventors: Kuo-Chu YEH, Shu-Wei Yeh, Chun-Chieh Chu, Wei-Liang Lin