Abstract: A sensor lens assembly having a non-reflow configuration is provided. The sensor lens assembly includes a circuit board, an optical module fixed to a surface of the circuit board, a sensor chip assembled to the circuit board, a plurality of wires electrically coupling the sensor chip and the circuit board, a supporting adhesive layer, and a light-permeable sheet. The circuit board has a chip-receiving slot recessed in the surface thereof The sensor chip is arranged in the chip-receiving slot, and a top surface of the sensor chip and the surface of the circuit board have a step difference therebetween that is less than or equal to 10 ?m. The supporting adhesive layer is in a ringed shape and is disposed on the top surface of the sensor chip. The light-permeable sheet is disposed on the supporting adhesive layer and faces the sensor chip.

Abstract: Disclosed belongs to the technical field of displaying, and relates to a quantum dot light emitting diode and a method for manufacturing the same, and a display panel. The method for manufacturing the quantum dot light emitting diode comprises steps of forming a cathode, an electron transport layer doping a substance capable of trapping current carriers comprising a N-type metal oxide and a quantum dot material with a surface ligand comprising a hydroxyl group, a light emitting layer, a hole transport layer and an anode. The quantum dot light emitting diode can effectively reduce the electron transport or injection by incorporating a substance capable of trapping current carriers, and therefore significantly improve the luminous efficiency. Meanwhile, the PEDOT:PSS with high conductivity is used as the transparent anode, and thus the whole structure may be manufactured totally by using solution processes at low cost and without high vacuum coating machines.

Abstract: An image sensing chip package structure includes a chip, an adhesive loop and a light-transmissible substrate member. The chip includes an image sensing region. The adhesive loop is connected to the chip, and has an inner peripheral surface that defines a plurality of protrusions which surround the image sensing region of the chip. The light-transmissible substrate member is connected to the adhesive loop oppositely of the chip to cover the image sensing region of the chip. Methods of manufacturing the image sensing chip package structures are also provided.

Abstract: An image sensing chip package structure includes a chip, an adhesive loop and a light-transmissible substrate member. The chip includes an image sensing region. The adhesive loop is connected to the chip, and has an inner peripheral surface that defines a plurality of protrusions which surround the image sensing region of the chip. The light-transmissible substrate member is connected to the adhesive loop oppositely of the chip to cover the image sensing region of the chip. Methods of manufacturing the image sensing chip package structures are also provided.

Abstract: The present invention provides methods, devices and systems for sequencing and/or analyzing a polymer and/or polymer unit. The polymer may include but not limited to DNA, RNA, a polysaccharide, or a protein. The device includes a nano-pen, which is a bifunctional nanopore/nanoelectrode, and a second electrode. The nano-pen electrode and the second electrode form a tunnel gap. Polymers passing through the nano-pen nanopore will be directed to the tunnel gap between electrodes. The electrodes are functionalized with a recognition reagent, and the reagent can transiently bind each polymer unit during its passage. When the transient bond forms, distinctive current signals are detected and recorded. The signals are utilized to analyze and identify the polymer and/or polymer unit.

Abstract: Disclosed belongs to the technical field of displaying, and relates to a quantum dot light emitting diode and a method. for manufacturing the same, and a display panel. The method for manufacturing the quantum dot light emitting diode comprises steps of forming a cathode, an electron transport layer doping a substance capable of trapping current carriers comprising a N-type metal oxide and a quantum dot material with a surface ligand comprising a hydroxyl group, a light emitting layer, a hole transport layer and an anode. The quantum dot light emitting diode can effectively reduce the electron transport or injection by incorporating a substance capable of trapping current carriers, and therefore significantly improve the luminous efficiency. Meanwhile, the PEDOT:PSS with high conductivity is used as the transparent anode, and thus the whole structure may be manufactured totally by using solution processes at low cost and without high vacuum coating machines.

Abstract: An electronic device includes a chip package module which includes a chip carrier substrate, a chip, a thermal conductive unit, and an encapsulant laver. The chip is electrically connected to the chip carrier substrate. The thermal conductive unit has a first thermal conductive surface connected to the chip, and a second thermal conductive surface opposite to the first thermal conductive surface. The thermal conductive unit has a thermal conductivity greater than that of the chip. The encapsulant layer covers the chip and partially covers the thermal conductive unit in such a manner that the second thermal conductive surface is exposed from the encapsulant layer.

Abstract: The present disclosure relates to a quantum dot light-emitting layer, a quantum dot light-emitting device and preparing methods therefor and belongs to the field of liquid crystal display. The preparing method for a quantum dot light-emitting layer includes: placing a first halide AX and a second halide BX2 in a solvent; stirring and dispersing the reaction system formed by the first halide AX, the second halide BX2 and the solvent at a set temperature for a set time period; cooling the reaction system at a cooling rate of 0.1° C./24 h-1° C./24 h to generate an A4BX6 single crystal thin film containing ABX3 quantum dots, and using the A4BX6 single crystal thin film containing ABX3 quantum dots as the quantum dot light-emitting layer; wherein A includes one of Cs+, CH3NH3+ and HC(NH2)2+; B includes one of Pb2+ and Sn2+; and X includes one of Cl?, Br? and I?.

Abstract: An image sensing chip package structure includes a chip, an adhesive loop and a light-transmissible substrate member. The chip includes an image sensing region. The adhesive loop is connected to the chip, and has an inner peripheral surface that defines a plurality of protrusions which surround the image sensing region of the chip. The light-transmissible substrate member is connected to the adhesive loop oppositely of the chip to cover the image sensing region of the chip. Methods of manufacturing the image sensing chip package structures are also provided.

Abstract: A method for making a fingerprint sensor package module includes the steps of: providing a substrate, disposing a fingerprint sensor chip over a mounting region of the substrate, forming a masking layer on a sensing region of the fingerprint sensor chip, electrically connecting the substrate to the fingerprint sensor chip, molding an encapsulation structure, and removing the masking layer to expose the sensing region of the fingerprint sensor chip.

Abstract: The present disclosure provides a diode device comprising a first electrode, a hole transport layer, a functional layer, an electron transport layer and a second electrode that are stacked, wherein the functional layer comprises at least one sub-functional layer each comprising a photo-detection layer and an electroluminescent layer which are stacked and a difference of energy barriers between the photo-detection layer and the electroluminescent layer is not more than 1.5 eV; the photo-detection layer comprises a nanocrystalline derived from a copper indium sulfide system compound, and the electroluminescent layer comprises an oil-soluble nanocrystalline. The present disclosure further provides a method for manufacturing a diode device, and a diode apparatus having both electro-luminescence and photoelectric response properties, and higher material universal applicability.

Abstract: The present disclosure provides a diode device comprising a first electrode, a hole transport layer, a functional layer, an electron transport layer and a second electrode that are stacked, wherein the functional layer comprises at least one sub-functional layer each comprising a photo-detection layer and an electroluminescent layer which are stacked and a difference of energy barriers between the photo-detection layer and the electroluminescent layer is not more than 1.5 eV; the photo-detection layer comprises a nanocrystalline derived from a copper indium sulfide system compound, and the electroluminescent layer comprises an oil-soluble nanocrystalline. The present disclosure further provides a method for manufacturing a diode device, and a diode apparatus having both electro-luminescence and photoelectric response properties, and higher material universal applicability.

Abstract: The present disclosure relates to a quantum dot light-emitting layer, a quantum dot light-emitting device and preparing methods therefor and belongs to the field of liquid crystal display. The preparing method for a quantum dot light-emitting layer includes: placing a first halide AX and a second halide BX2 in a solvent; stirring and dispersing the reaction system formed by the first halide AX, the second halide BX2 and the solvent at a set temperature for a set time period; cooling the reaction system at a cooling rate of 0.1° C./24 h?1° C./24 h to generate an A4BX6 single crystal thin film containing ABX3 quantum dots, and using the A4BX6 single crystal thin film containing ABX3 quantum dots as the quantum dot light-emitting layer; wherein A includes one of Cs+, CH3NH3+ and HC(NH2)2+; B includes one of Pb2+ and Sn2+; and X includes one of Cl?, Br? and I?.

Abstract: A method for making a fingerprint sensor package module includes the steps of: providing a substrate, disposing a fingerprint sensor chip over a mounting region of the substrate, forming a masking layer on a sensing region of the fingerprint sensor chip, electrically connecting the substrate to the fingerprint sensor chip, molding an encapsulation structure, and removing the masking layer to expose the sensing region of the fingerprint sensor chip.

Abstract: The invention includes compositions, devices, and methods for analyzing a polymer and/or polymer unit. The polymer may be a homo or hetero-polymer such as DNA, RNA, a polysaccharide, or a peptide. The device includes electrodes that form a tunnel gap through which the polymer can pass. The electrodes are functionalized with a reagent attached thereto, and the reagent is capable of forming a transient bond to a polymer unit. When the transient bond forms between the reagent and the unit, a detectable signal is generated and used to analyze the polymer.

Abstract: A storage system includes a monitoring service that identifies root causes of storage systems issues using relationships. The monitoring service can use thresholds associated with the relationships to detect the root causes. Relationships can be based on correlation relationships between the different levels of the storage system. In various embodiments, relationships can also be based on events that affect multiple storage volumes or on short-term events. Once a relationship is identified, a threshold for that relationship is generated or updated. The monitoring service can make that threshold accessible to other components of the monitoring service or an operator of the storage system to be used in detecting root causes.

Abstract: Suppression routines are described for implementation by a monitoring service. The monitoring service uses collected data to identify faulty storage volumes. Advantageously, in some cases, the monitoring service can notify an operator of the storage system that certain storage volumes are faulty. In some embodiments, these notifications are to be suppressed because not all notifications of faulty volumes are necessary. Suppression rules can indicate that a faulty storage volume is at fault because it is a test volume, associated with a large power outage, or some other learned event from storage command metrics. The monitoring service can suppress notifications about these known system issues, among others.

Abstract: The present invention relates to a tunnel recognition technology-based nano-detection device and method. The said detection device consists of nano wand, plane electrode, active power and current tester. The said detection method consists of the following steps: Place the said nano wand into the test solution with a specific DNA or RNA sequence, and place the said plane electrode on the surface of the said test solution; import the said DNA or RNA sequence into the said transmission pipeline; detect and record the current change displayed by the said current tester; read the base signal of the said DNA or RNA sequence based on the said current change detected. The technical scheme of the present invention is based on DNA sequence direct reading techniques, characterized by quick reading and high accuracy.

Abstract: The invention includes compositions, devices, and methods for analyzing a polymer and/or polymer unit. The polymer may be a homo or hetero-polymer such as DNA, RNA, a polysaccharide, or a peptide. The device includes electrodes that form a tunnel gap through which the polymer can pass. The electrodes are functionalized with a reagent attached thereto, and the reagent is capable of forming a transient bond to a polymer unit. When the transient bond forms between the reagent and the unit, a detectable signal is generated and used to analyze the polymer.

Abstract: Notification routines are described for implementation by a monitoring service. As part of an exemplary notification routine, a faulty storage volume is correlated at multiple logical storage levels of a storage system with other faulty storage volumes. The correlation pattern can follow a tree-based decision format, where each faulty storage volume is sequentially compared at a lower logical storage level. Advantageously, once a common logical storage component of a group of storage volumes is identified, a notification is issued about the group of faulty storage volumes sharing the common logical storage component. Additionally, notifications can be issued according to a severity level of the group of faulty storage volumes. In some embodiments, before issuing the notification, the group of faulty storage volumes can be compared to a time allowed for the group of faulty storage volume to be at fault.