Patents by Inventor Shuangching Chen
Shuangching Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11521933Abstract: A semiconductor device is provided, which includes a semiconductor chip; a first current input/output portion that is electrically connected to the semiconductor chip; a second current input/output portion that is electrically connected to the semiconductor chip; three or more conducting portions provided with the semiconductor chip, between the first current input/output portion and the second current input/output portion; and a current path portion having a path through which current is conducted to each of the three or more conducting portions, wherein the current path portion includes a plurality of slits.Type: GrantFiled: March 30, 2020Date of Patent: December 6, 2022Assignee: FUJI ELECTRIC CO., LTD.Inventors: Shuangching Chen, Sayaka Yamamoto
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Publication number: 20200227345Abstract: A semiconductor device is provided, which includes a semiconductor chip; a first current input/output portion that is electrically connected to the semiconductor chip; a second current input/output portion that is electrically connected to the semiconductor chip; three or more conducting portions provided with the semiconductor chip, between the first current input/output portion and the second current input/output portion; and a current path portion having a path through which current is conducted to each of the three or more conducting portions, wherein the current path portion includes a plurality of slits.Type: ApplicationFiled: March 30, 2020Publication date: July 16, 2020Inventors: Shuangching CHEN, Sayaka YAMAMOTO
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Patent number: 10554150Abstract: A three-level inverter includes a first semiconductor switching element disposed between a direct-current high potential terminal and an alternating-current output terminal, a second semiconductor switching element disposed between a direct-current low potential terminal, which is paired with the direct-current high potential terminal, and the alternating-current output terminal, first and second reflux diodes which are disposed reverse-parallelly with the first and second semiconductor switching elements, respectively, and a semiconductor circuit which controls gate voltages of the first and second semiconductor switching elements by selectively applying thereto a direct-current intermediate voltage which is given to a direct-current intermediate potential terminal. Inductance elements are connected in series to the first and second reflux diodes, respectively.Type: GrantFiled: December 28, 2018Date of Patent: February 4, 2020Assignee: FUJI ELECTRIC CO., LTD.Inventor: Shuangching Chen
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Publication number: 20190140555Abstract: A three-level inverter includes a first semiconductor switching element disposed between a direct-current high potential terminal and an alternating-current output terminal, a second semiconductor switching element disposed between a direct-current low potential terminal, which is paired with the direct-current high potential terminal, and the alternating-current output terminal, first and second reflux diodes which are disposed reverse-parallelly with the first and second semiconductor switching elements, respectively, and a semiconductor circuit which controls gate voltages of the first and second semiconductor switching elements by selectively applying thereto a direct-current intermediate voltage which is given to a direct-current intermediate potential terminal. Inductance elements are connected in series to the first and second reflux diodes, respectively.Type: ApplicationFiled: December 28, 2018Publication date: May 9, 2019Applicant: FUJI ELECTRIC CO., LTD.Inventor: Shuangching CHEN
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Patent number: 10097174Abstract: A semiconductor device includes a switching element including a control electrode, a first main electrode, and a second main electrode: a gate driver connected between the control electrode and the first main electrode, configured to transmit a gate drive signal for driving the control electrode; a Miller voltage detector detecting a Miller voltage between the control electrode and the first main electrode when the switching element turns off; a current value detector detecting a principal current flowing through the switching element; and a temperature calculator calculating a temperature of the switching element from the detected Miller voltage and principal current.Type: GrantFiled: May 22, 2017Date of Patent: October 9, 2018Assignee: FUJI ELECTRONICS CO., LTD.Inventors: Shuangching Chen, Shogo Ogawa
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Patent number: 10056894Abstract: A drive unit of a semiconductor element including: a drive circuit for driving a control electrode of a voltage control semiconductor element to which a freewheeling diode is connected in anti-parallel; a resistor connected between the control electrode and the drive circuit; a capacitor having one terminal connected between the resistor and the control electrode; and a switch element connected between another terminal of the capacitor and a low-voltage-side electrode of the voltage control semiconductor element, wherein a control electrode of the switch element is connected to a connection point of the resistor and the capacitor.Type: GrantFiled: November 21, 2016Date of Patent: August 21, 2018Assignee: FUJI ELECTRIC CO., LTD.Inventors: Shuangching Chen, Shogo Ogawa
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Publication number: 20180019744Abstract: A semiconductor device includes a switching element including a control electrode, a first main electrode, and a second main electrode: a gate driver connected between the control electrode and the first main electrode, configured to transmit a gate drive signal for driving the control electrode; a Miller voltage detector detecting a Miller voltage between the control electrode and the first main electrode when the switching element turns off; a current value detector detecting a principal current flowing through the switching element; and a temperature calculator calculating a temperature of the switching element from the detected Miller voltage and principal current.Type: ApplicationFiled: May 22, 2017Publication date: January 18, 2018Applicant: FUJI ELECTRIC CO., LTD.Inventors: Shuangching CHEN, Shogo OGAWA
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Patent number: 9871465Abstract: A semiconductor device can include an insulating substrate on which at least four semiconductor elements forming a three-level power conversion circuit are mounted, a base plate on which the insulating substrate is provided, a positive conductor plate with a positive DC potential which is connected to one semiconductor element among the semiconductor elements; a negative conductor plate with a negative DC potential which is connected to another semiconductor element among the semiconductor elements and an intermediate potential conductor plate with an intermediate potential which is connected to the remaining two semiconductor elements among the semiconductor elements. The positive conductor plate, the negative conductor plate, and the intermediate potential conductor plate are provided on the base plate. The positive conductor plate and the negative conductor plate are arranged close to the intermediate potential conductor plate so as to face the intermediate potential conductor plate.Type: GrantFiled: June 4, 2015Date of Patent: January 16, 2018Assignee: FUJI ELECTRIC CO., LTD.Inventors: Shuangching Chen, Hiroaki Ichikawa
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Publication number: 20170194954Abstract: A drive unit of a semiconductor element including: a drive circuit for driving a control electrode of a voltage control semiconductor element to which a freewheeling diode is connected in anti-parallel; a resistor connected between the control electrode and the drive circuit; a capacitor having one terminal connected between the resistor and the control electrode; and a switch element connected between another terminal of the capacitor and a low-voltage-side electrode of the voltage control semiconductor element, wherein a control electrode of the switch element is connected to a connection point of the resistor and the capacitor.Type: ApplicationFiled: November 21, 2016Publication date: July 6, 2017Applicant: FUJI ELECTRIC CO., LTD.Inventors: Shuangching CHEN, Shogo OGAWA
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Patent number: 9496801Abstract: An increase in leakage current when a reverse voltage is applied to reverse-blocking insulated gate bipolar transistors is suppressed, thus reducing a loss resulting from the leakage current. A power conversion device includes a bidirectional switch formed by connecting two reverse-blocking insulated gate bipolar transistors having reverse breakdown voltage characteristics in reverse parallel. A control circuit is configured so as to output command signals for bringing the gates of the reverse-blocking insulated gate bipolar transistors, to which a reverse voltage is applied, into an on state.Type: GrantFiled: July 14, 2014Date of Patent: November 15, 2016Assignee: FUJI ELECTRIC CO., LTD.Inventor: Shuangching Chen
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Publication number: 20150270786Abstract: A semiconductor device can include an insulating substrate on which at least four semiconductor elements forming a three-level power conversion circuit are mounted, a base plate on which the insulating substrate is provided, a positive conductor plate with a positive DC potential which is connected to one semiconductor element among the semiconductor elements; a negative conductor plate with a negative DC potential which is connected to another semiconductor element among the semiconductor elements and an intermediate potential conductor plate with an intermediate potential which is connected to the remaining two semiconductor elements among the semiconductor elements. The positive conductor plate, the negative conductor plate, and the intermediate potential conductor plate are provided on the base plate. The positive conductor plate and the negative conductor plate are arranged close to the intermediate potential conductor plate so as to face the intermediate potential conductor plate.Type: ApplicationFiled: June 4, 2015Publication date: September 24, 2015Inventors: Shuangching CHEN, Hiroaki ICHIKAWA
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Patent number: 8934277Abstract: In some aspects of the invention, multiple insulating substrates each mounting thereon at least one each of at least four semiconductor devices that form at least one of three-level electric power inverter circuits and a base plate on the one surface of which a plurality of the insulating plates are arranged are provided. On the one surface of the base plate, at least four regions are established and multiple insulating substrates are arranged to be distributed so that at least one each of the at least four semiconductor devices is arranged in each of the four regions established on the base plate. This can make the semiconductor devices arranged to be distributed so that heat generating sections determined according to the operation mode of the semiconductor system comes to be partial to disperse generated heat, by which a semiconductor system is provided which can enhance heat dispersion efficiency.Type: GrantFiled: January 16, 2014Date of Patent: January 13, 2015Assignee: Fuji Electric Co., Ltd.Inventors: Shuangching Chen, Hiroaki Ichikawa
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Publication number: 20140321181Abstract: An increase in leakage current when a reverse voltage is applied to reverse-blocking insulated gate bipolar transistors is suppressed, thus reducing a loss resulting from the leakage current. A power conversion device includes a bidirectional switch formed by connecting two reverse-blocking insulated gate bipolar transistors having reverse breakdown voltage characteristics in reverse parallel. A control circuit is configured so as to output command signals for bringing the gates of the reverse-blocking insulated gate bipolar transistors, to which a reverse voltage is applied, into an on state.Type: ApplicationFiled: July 14, 2014Publication date: October 30, 2014Inventor: Shuangching CHEN
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Publication number: 20140218991Abstract: In some aspects of the invention, multiple insulating substrates each mounting thereon at least one each of at least four semiconductor devices that form at least one of three-level electric power inverter circuits and a base plate on the one surface of which a plurality of the insulating plates are arranged are provided. On the one surface of the base plate, at least four regions are established and multiple insulating substrates are arranged to be distributed so that at least one each of the at least four semiconductor devices is arranged in each of the four regions established on the base plate. This can make the semiconductor devices arranged to be distributed so that heat generating sections determined according to the operation mode of the semiconductor system comes to be partial to disperse generated heat, by which a semiconductor system is provided which can enhance heat dispersion efficiency.Type: ApplicationFiled: January 16, 2014Publication date: August 7, 2014Applicant: FUJI ELECTRIC CO., LTD.Inventors: Shuangching CHEN, Hiroaki ICHIKAWA
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Patent number: D704670Type: GrantFiled: July 16, 2013Date of Patent: May 13, 2014Assignee: Fuji Electric Co., Ltd.Inventors: Shuangching Chen, Akira Iso, Takashi Hyakutake, Syougo Ogawa, Syuuji Miyashita
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Patent number: D704671Type: GrantFiled: July 16, 2013Date of Patent: May 13, 2014Assignee: Fuji Electric Co., Ltd.Inventors: Shuangching Chen, Akira Iso, Takashi Hyakutake, Syougo Ogawa, Syuuji Miyashita
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Patent number: D710317Type: GrantFiled: July 16, 2013Date of Patent: August 5, 2014Assignee: Fuji Electric Co., Inc.Inventors: Shuangching Chen, Akiro Iso, Takashi Hyakutake, Syougo Ogawa, Syuuji Miyashita
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Patent number: D710318Type: GrantFiled: July 16, 2013Date of Patent: August 5, 2014Assignee: Fuji Electric Co., Ltd.Inventors: Shuangching Chen, Akira Iso, Takashi Hyakutake, Syougo Ogawa, Syuuji Miyashita
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Patent number: D710319Type: GrantFiled: July 16, 2013Date of Patent: August 5, 2014Assignee: Fuji Electric Co., Ltd.Inventors: Shuangching Chen, Akira Iso, Takashi Hyakutake, Syougo Ogawa, Syuuji Miyashita