Abstract: According to one embodiment, a light emitting device which is attached to an illumination apparatus and radiates light having a correlated color temperature of 2900 to 3600K is provided. The light emitting device includes a substrate, blue light emitting LED elements and red light emitting LED elements mounted on the substrate, and a wavelength converting unit. The red light emitting LED elements have a luminous intensity of 0.2 to 2.5 times as large as that of the blue light emitting LED elements at normal use temperature in a state where the light emitting device is attached to the illumination apparatus. The wavelength converting unit is excited by light emitted from the blue light emitting LED elements and converts the light to light having a peak wavelength within a range of 500 to 600 nm.

Abstract: To improve an angular color difference and emit uniform illumination light. According to an embodiment, a light-emitting device in an embodiment includes a light-emitting module (15). The light-emitting module (15) includes a substrate (21), a plurality of light-emitting elements (45) made of semiconductor, and a plurality of sealing members (54). The light-emitting elements (45) are disposed on the substrate (21). The sealing members (54) contain, as a main component, translucent resin mixed with a phosphor. The sealing members (54) are heaped up from the bottom surfaces thereof bonded on the substrate (21) and are each formed to bury a singularity or a plurality of the light-emitting elements (45). A ratio (H/D) of a diameter D of the bottom surfaces to height H of the heaps of the sealing members (54) is set to 0.22 to 1.0.

Abstract: A light-emitting device includes a substrate, and a plurality of light-emitting elements mounted on the substrate. The light-emitting elements are placed to meet conditions that the number B of light-emitting elements per unit area (cm2) of a mounting part is not less than 0.4 and a mean mounting density D is not less than 58 to not greater than 334, when a relationship of formula “D=A×B” is established, assuming D as a mean mounting density of light-emitting elements on a substrate, A as a current (mA) flowing through one light-emitting element, and B as the number of light-emitting elements per unit area (cm2) of a substantial mounting part for light-emitting elements.

Abstract: A self-ballasted lamp includes: a base body; a light-emitting module and a globe which are provided at one end side of the base body; a cap provided at the other end side of the base body; and a lighting circuit housed between the base body and the cap. The light-emitting module has light-emitting portions each using a semiconductor light-emitting element, and a support portion projected at one end side of the base body, and the light-emitting portions are disposed at least on a circumferential surface of the support portion. A light-transmissive member is interposed between the light-emitting module and an inner face of the globe.

Abstract: A self-ballasted lamp includes: a base body; a light-emitting module and a globe which are provided at one end side of the base body; a cap provided at the other end side of the base body; and a lighting circuit housed between the base body and the cap. The light-emitting module has light-emitting portions each using a semiconductor light-emitting element, and a support portion projected at one end side of the base body, and the light-emitting portions are disposed at least on a circumferential surface of the support portion. A light-transmissive member is interposed between the light-emitting module and an inner face of the globe.

Abstract: A light-emitting device includes a substrate, a reflecting layer formed on the substrate, a light-emitting element placed on the reflecting layer, and a sealing resin layer that covers the reflecting layer and the light-emitting element. The oxygen permeability of the sealing resin layer is equal to or lower than 1200 cm3/(m2·day·atm), and the ratio of the area of the reflecting layer covered by the sealing resin layer to the entire area on the resin substrate covered by the sealing resin layer is between 30% and 75% inclusive.

Abstract: A light-emitting circuit is formed as a straight tube in a stable shape and capable of appropriately housing and holding an LED module and the like. The light-emitting circuit includes: a plurality of light-emitting elements configured to emit light; a substrate, functioning as an arrangement member, including an arrangement surface on which the plurality of light-emitting elements are arranged; and a substantially cylindrical lamp body including a translucent section at least in a part thereof, including the arrangement member disposed on the inside, and including a louver functioning as a projecting body projecting from an inner wall opposed to the arrangement surface and extending toward the arrangement surface.

Abstract: According to one embodiment, a light emitting device includes a ceramics substrate, a metallic thermally-conductive layer formed on the substrate in which the substrate involves no electric connection, a light emitting element mounted on the metallic thermally-conductive layer, and a metallic bonding layer interposed between the metallic thermally-conductive layer and the light emitting element to bond the light emitting element to the metallic thermally-conductive layer.

Abstract: According to one embodiment, a light-emitting device includes a substrate, a reflecting layer formed on the substrate, a light-emitting element placed on the reflecting layer, and a sealing resin layer that covers the reflecting layer and the light-emitting element. The oxygen permeability of the sealing resin layer is equal to or lower than 1200 cm3/(m2·day·atm), and the ratio of the area of the reflecting layer covered by the sealing resin layer to the entire area on the resin substrate covered by the sealing resin layer is between 30% and 75% inclusive.

Abstract: A lamp with ferrule 10 includes a substrate 12 in which a solid light-emitting device 11 is implemented on one surface side thereof; a thermal radiation member 14 which is fixed to the other surface side of the substrate 12 by a fluid fixing member 13 having thermal conductivity; a light-emitting portion 15 constituted by the substrate 12 and the thermal radiation member 14; a thermally conductive support member 17 which constitutes a three-dimensional light source body 16 using a plurality of light-emitting portions 15; a thermally conductive main body 18 which is provided with the support member 17 so as to project the three-dimensional light source body 16 to the one end portion side; and a ferrule member 19 that is provided on the other end portion side of the main body 18.

Abstract: According to one embodiment, a light-emitting apparatus includes an insulating base made of ceramics, an obverse metallic component dividedly arranged on the front surface of the insulating base, semiconductor light-emitting elements mounted on the obverse metallic component, and a reverse metallic component arranged on a back surface of the insulating base and having a thickness same as or smaller than a thickness of the obverse metallic component and a volume equal to 50% or larger of a volume of the obverse metallic component.

Abstract: According to one embodiment, a light emitting device includes a substrate, a lead pattern and a plurality of mounting pads, and a plurality of light emitting elements. The substrate includes an insulating layer. The lead pattern and the plurality of mounting pads are formed on a surface of the substrate. The lead pattern and the plurality of mounting pads are conductive. The plurality of mounting pads are configured not to electrically conduct. The lead pattern is configured to electrically conduct. The plurality of light emitting elements are mounted on the mounting pads and electrically connected to the lead pattern.

Abstract: This invention is to provide a method of polishing a silicon wafer wherein a high flatness can be attained likewise the conventional polishing method and further the occurrence of defects due to the remaining of substances included in the polishing solution on the surface of the wafer can be suppressed as well as a polished silicon wafer. The method of polishing a silicon wafer by supplying a polishing solution containing abrasive grains onto a surface of a polishing pad and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, is characterized in that the number of abrasive grains included in the polishing solution is controlled to not more than 5×1013 grains/cm3.

Abstract: A light-emitting device includes a substrate, and a plurality of light-emitting elements mounted on the substrate. The light-emitting elements are placed to meet conditions that the number B of light-emitting elements per unit area (cm2) of a mounting part is not less than 0.4 and a mean mounting density D is not less than 58 to not greater than 334, when a relationship of formula “D=A×B” is established, assuming D as a mean mounting density of light-emitting elements on a substrate, A as a current (mA) flowing through one light-emitting element, and B as the number of light-emitting elements per unit area (cm2) of a substantial mounting part for light-emitting elements.

Abstract: According to one embodiment, a light-emitting module includes a module substrate, a reflective layer, conductive layers, a light-emitting element, and a sealing member. A reflective layer is provided on a surface of an insulating layer of the module substrate, and the conductive layers are provided in the vicinity of the reflective layer. Further, the light-emitting element is provided on the reflective layer. Moreover, the translucent sealing member has translucency and bury the reflective layer, the conductive layers, and the light-emitting element. The ratio of the area occupied by the reflective layer and the conductive layers to the sealed region sealed by the sealing member is equal to or greater than 80%.