Abstract: A laminated member includes a glass member of which a linear transmittance at a wavelength of 850 nm is 80% or more, a bonding layer provided on or above the glass member, the bonding layer being constituted by a resin, and a ceramic member provided on or above the bonding layer, the ceramic member being constituted by an SiC member or an AlN member.

Abstract: A laminated member includes a glass member of which a linear transmittance at a wavelength of 850 nm is 80% or more, a bonding layer provided on or above the glass member, the bonding layer being constituted by a resin, and a Si—SiC member provided on or above the bonding layer.

Abstract: In a bevel gear pair, a first gear (G1) and a second gear (G2) are applied with tooth top modification, and a ratio of a distance (L1b) from a pitch circle (P1) to a starting position (R1) of the tooth top modification to a distance (L1a) from the pitch circle (P1) to a tooth top (T1) in the first gear (G1) is larger than a ratio of a distance (L2b) from a pitch circle (P2) to a starting position (R2) of the tooth top modification to a distance (L2a) from a pitch circle (P2) to a tooth top (T2) in the second gear (G2). Thus, the bevel gear pair that can achieve smooth meshing is provided.

Abstract: The present invention provides a glass substrate in which in a step of sticking a glass substrate and a silicon-containing substrate to each other, bubbles hardly intrude therebetween. The present invention relates to a glass substrate for forming a laminated substrate by lamination with a silicon-containing substrate, having a warpage of 2 ?m to 300 ?m, and an inclination angle due to the warpage of 0.0004° to 0.12°.

Abstract: A glass substrate for a high-frequency device, which contains SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of alkaline earth metal oxides in the range of 0.1-13% in terms of mole percent on the basis of oxides, wherein at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

Abstract: A glass substrate has a compaction of 0.1 to 100 ppm. An absolute value |??50/100| of a difference between an average coefficient of thermal expansion ?50/100 of the glass substrate and an average coefficient of thermal expansion of single-crystal silicon at 50° C. to 100° C., an absolute value |??100/200| of a difference between an average coefficient of thermal expansion ?100/200 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 100° C. to 200° C., and an absolute value |??200/300| of a difference between an average coefficient of thermal expansion ?200/300 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 200° C. to 300° C. are 0.16 ppm/° C. or less.

Abstract: Provided is a glass substrate with which it is possible to reduce dielectric loss in high-frequency signals, and which also has excellent thermal shock resistance. This invention satisfies the relation {Young's modulus (GPa)×average thermal expansion coefficient (ppm/° C.) at 50-350° C.}?300 (GPa·ppm/° C.), wherein the relative dielectric constant at 20° C. and 35 GHz does not exceed 10, and the dielectric dissipation factor at 20° C. and 35 GHz does not exceed 0.006.

Abstract: A glass substrate has a compaction of 0.1 to 100 ppm. An absolute value |??50/100| of a difference between an average coefficient of thermal expansion ?50/100 of the glass substrate and an average coefficient of thermal expansion of single-crystal silicon at 50° C. to 100° C., an absolute value |??100/200| of a difference between an average coefficient of thermal expansion ?100/200 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 100° C. to 200° C., and an absolute value |??200/300| of a difference between an average coefficient of thermal expansion ?200/300 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 200° C. to 300° C. are 0.16 ppm/° C. or less.

Abstract: An alkali-free glass substrate includes, as represented by molar percentage based on oxides, 11.0% or more of Al2O3, 8.0% or more of B2O3, and 1% or more of SrO. The alkali-free glass substrate has an average coefficient of thermal expansion ?100/200 at 100 to 200° C. of from 3.10 ppm/° C. to 3.70 ppm/° C., a Young's modulus of 76.0 GPa or less, and a density of 2.42 g/cm3 or more.

Abstract: A laminated member includes a glass member of which a linear transmittance at a wavelength of 850 nm is 80% or more, a bonding layer provided on or above the glass member, the bonding layer being constituted by a resin, and a Si—SiC member provided on or above the bonding layer.

Abstract: A laminated member includes a glass member of which a linear transmittance at a wavelength of 850 nm is 80% or more, a bonding layer provided on or above the glass member, the bonding layer being constituted by a resin, and a ceramic member provided on or above the bonding layer, the ceramic member being constituted by an SiC member or an AlN member.

Abstract: Provided is a glass substrate with which it is possible to reduce dielectric loss in high-frequency signals, and which also has excellent thermal shock resistance. This invention satisfies the relation {Young's modulus (GPa)×average thermal expansion coefficient (ppm/° C.) at 50-350° C.}?300 (GPa·ppm/° C.), wherein the relative dielectric constant at 20° C. and 35 GHz does not exceed 10, and the dielectric dissipation factor at 20° C. and 35 GHz does not exceed 0.006.

Abstract: An alkali-free glass substrate which is a glass substrate includes, as represented by molar percentage based on oxides, 0.1% to 10% of ZnO. The alkali-free glass substrate has an average coefficient of thermal expansion ?50/100 at 50 to 100° C. of from 2.70 ppm/° C. to 3.20 ppm/° C., an average coefficient of thermal expansion ?200/300 at 200 to 300° C. of from 3.45 ppm/° C. to 3.95 ppm/° C., and a value ?200/300/?50/100 obtained by dividing the average coefficient of thermal expansion ?200/300 at 200 to 300° C. by the average coefficient of thermal expansion ?50/100 at 50 to 100° C. of from 1.20 to 1.30.

Abstract: Provided is a glass substrate with which it is possible to reduce dielectric loss in high-frequency signals, and which also has excellent thermal shock resistance. This invention satisfies the relation {Young's modulus (GPa)×average thermal expansion coefficient (ppm/° C.) at 50-350° C.}?300 (GPa·ppm/° C.), wherein the relative dielectric constant at 20° C. and 35 GHz does not exceed 10, and the dielectric dissipation factor at 20° C. and 35 GHz does not exceed 0.006.

Abstract: A glass substrate is laminated with a substrate containing silicon to thereby form a laminated substrate. The glass substrate has a concave surface and a convex surface and has one or more marks that distinguish between the concave surface and the convex surface.

Abstract: The present invention provides a glass substrate in which in a step of sticking a glass substrate and a silicon-containing substrate to each other, bubbles hardly intrude therebetween. The present invention relates to a glass substrate for forming a laminated substrate by lamination with a silicon-containing substrate, having a warpage of 2 ?m to 300 ?m, and an inclination angle due to the warpage of 0.0004° to 0.12°.

Abstract: A glass substrate is laminated with a substrate containing silicon to thereby form a laminated substrate. The glass substrate has a concave surface and a convex surface and has one or more marks that distinguish between the concave surface and the convex surface.

Abstract: The present invention provides a glass substrate in which in a step of sticking a glass substrate and a silicon-containing substrate to each other, bubbles hardly intrude therebetween. The present invention relates to a glass substrate for forming a laminated substrate by lamination with a silicon-containing substrate, having a warpage of 2 ?m to 300 ?m, and an inclination angle due to the warpage of 0.0004° to 0.12°.

Abstract: A glass substrate for high-frequency devices includes, in terms of molar percentage based on oxides: one or more alkaline-earth metal oxides in a total amount of 0.1 to 13%; Al2O3 and B2O3 in a total amount of 1 to 40%, in which a molar ratio of the contents represented by Al2O3/(Al2,O3+B2O3) is 0 to 0.45; at least one oxide selected from the group consisting of Sc2O3, TiO2, ZnO, Ga2O3, GeO2, Y2O3, ZrO2, Nb2O5, In2O3, TeO2, HfO2, Ta2O5, WO3, Bi2O3, La2O3, Gd2O3, Yb2O3, and Lu2O3, in a total amount of 0.1 to 1.0%; and SiO2 as a main component. The glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

Abstract: A glass substrate for a high-frequency device, which contains, in terms of mole percent on the basis of oxides: 40 to 75% of SiO2; 0 to 15% of Al2O3; 13 to 23% of B2O3; 2.5 to 11% of MgO; and 0 to 13% of CaO, and having a total content of alkali metal oxides in the range of 0.001-5%, where at least one main surface of the glass substrate has a surface roughness of 1.5 um or less in terms of arithmetic average roughness Ra. and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.