Abstract: The present invention relates to a glass substrate for a high-frequency device, which includes SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of Al2O3 and B2O3 in the range of 1-40% in terms of mole percent on the basis of oxides and having a molar ratio represented by Al2O3/(Al2O3+B2O3) in the range of 0-0.45, in which at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

Abstract: Provided is a glass substrate with which it is possible to reduce dielectric loss in high-frequency signals, and which also has excellent thermal shock resistance. This invention satisfies the relation {Young's modulus (GPa)×average thermal expansion coefficient (ppm/° C.) at 50-350° C}?300 (GPa·ppm/° C.), wherein the relative dielectric constant at 20° C. and 35 GHz does not exceed 10, and the dielectric dissipation factor at 20° C. and 35 GHz does not exceed 0.006.

Abstract: The present invention relates to a substrate having a dielectric loss tangent (A) as measured at 20° C. and 10 GHz of 0.1 or less, a dielectric loss tangent (B) as measured at 20° C. and 35 GHz of 0.1 or less, and a ratio [a dielectric loss tangent (C) as measured at an arbitrary temperature in a range of ?40 to 150° C. and at 10 GHz]/[the dielectric loss tangent (A)] of 0.90-1.10, or a substrate having a relative permittivity (a) as measured at 20° C. and 10 GHz of 4 or more and 10 or less, a relative permittivity (b) as measured at 20° C. and 35 GHz of 4 or more and 10 or less, and a ratio [a relative permittivity (c) as measured at an arbitrary temperature in a range of ?40 to 150° C. and at 10 GHz]/[the relative permittivity (a)] of 0.993-1.007.

Abstract: The present invention provides a glass substrate in which in a heat treatment step of sticking a silicon substrate and a glass substrate to each other, an alkali ion is hardly diffused into the silicon substrate, and a residual strain generated in the silicon substrate is small. A glass substrate of the present invention has: an average thermal expansion coefficient ?50/100 at 50° C. to 100° C. of 2.70 ppm/° C. to 3.20 ppm/° C.; an average thermal expansion coefficient ?200/300 at 200° C. to 300° C. of 3.45 ppm/° C. to 3.95 ppm/° C.; a value ?200/300/?50/100 obtained by dividing the average thermal expansion coefficient ?200/300 at 200° C. to 300° C. by the average thermal expansion coefficient ?50/100 at 50° C. to 100° C. of 1.20 to 1.30; and a content of an alkali metal oxide being 0% to 0.1% as expressed in terms of a molar percentage based on oxides.

Abstract: A light selective transmission type glass 10 according to the present invention includes: a glass substrate 12; and a light selective transmission layer 11 provided on at least one main surface of the glass substrate 12. The glass substrate 12 has an average thermal expansion coefficient ?50/100 at 50° C. to 100° C. of 2.70 ppm/° C. to 3.20 ppm/° C., an average thermal expansion coefficient ?200/300 at 200° C. to 300° C. of 3.45 ppm/° C. to 3.95 ppm/° C., a value ?200/300/?50/100 obtained by dividing the average thermal expansion coefficient ?200/300 at 200° C. to 300° C. by the average thermal expansion coefficient ?50/100 at 50° C. to 100° C. of 1.20 to 1.30, and a content of an alkali metal oxide being 0% to 0.1%.

Abstract: A glass substrate for a high-frequency device, which contains SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of alkaline earth metal oxides in the range of 0.1-13% in terms of mole percent on the basis of oxides, wherein at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

Abstract: The present invention provides a glass substrate in which in a step of sticking a glass substrate and a silicon-containing substrate to each other, bubbles hardly intrude therebetween. The present invention relates to a glass substrate for forming a laminated substrate by lamination with a silicon-containing substrate, having a warpage of 2 ?m to 300 ?m, and an inclination angle due to the warpage of 0.0004° to 0.12°.

Abstract: The present invention provides a glass substrate in which in a step of sticking a glass substrate and a silicon-containing substrate to each other, bubbles hardly intrude therebetween. The present invention relates to a glass substrate for forming a laminated substrate by lamination with a silicon-containing substrate, having a warpage of 2 ?m to 300 ?m, and an inclination angle due to the warpage of 0.0004° to 0.12°.

Abstract: The present invention relates to a glass substrate for a high-frequency device, which includes SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of Al2O3 and B2O3 in the range of 1-40% in terms of mole percent on the basis of oxides and having a molar ratio represented by Al2O3/(Al2O3+B2O3) in the range of 0-0.45, in which at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

Abstract: An alkali-free glass substrate which is a glass substrate includes, as represented by molar percentage based on oxides, 0.1% to 10% of ZnO. The alkali-free glass substrate has an average coefficient of thermal expansion ?50/100 at 50 to 100° C. of from 2.70 ppm/° C. to 3.20 ppm/° C., an average coefficient of thermal expansion ?200/300 at 200 to 300° C. of from 3.45 ppm/° C. to 3.95 ppm/° C., and a value ?200/300/?50/100 obtained by dividing the average coefficient of thermal expansion ?200/300 at 200 to 300° C. by the average coefficient of thermal expansion ?50/100 at 50 to 100° C. of from 1.20 to 1.30.

Abstract: A glass substrate has a compaction of 0.1 to 100 ppm. An absolute value |??50/100| of a difference between an average coefficient of thermal expansion ?50/100 of the glass substrate and an average coefficient of thermal expansion of single-crystal silicon at 50° C. to 100° C., an absolute value |??100/200| of a difference between an average coefficient of thermal expansion ?100/200 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 100° C. to 200° C., and an absolute value |??200/300| of a difference between an average coefficient of thermal expansion ?200/300 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 200° C. to 300° C. are 0.16 ppm/° C. or less.

Abstract: An alkali-free glass substrate includes, as represented by molar percentage based on oxides, 11.0% or more of Al2O3, 8.0% or more of B2O3, and 1% or more of SrO. The alkali-free glass substrate has an average coefficient of thermal expansion ?100/200 at 100 to 200° C. of from 3.10 ppm/° C. to 3.70 ppm/° C., a Young's modulus of 76.0 GPa or less, and a density of 2.42 g/cm3 or more.

Abstract: A tapered roller bearing includes: inner and outer rings; tapered rollers; and a retainer for the tapered rollers so as to prevent the rollers from being removed towards an outer diameter side. The inner ring has a small collar portion having a reduced diameter section neighboring an inner ring raceway. The reduced diameter section has an outer diameter surface of a diameter smaller than the remaining section of the small collar portion. An outer diameter of the remaining section of the small collar portion is larger than an inscribed circle diameter, and an outer diameter of the reduced diameter section is smaller than the inscribed circle diameter, which represents a diameter of a circle inscribed in the tapered rollers in an assembly of rollers and retainer, where the tapered rollers are retained by the retainer and the assembly has not been incorporated into the inner ring.

Abstract: A glass substrate is laminated with a substrate containing silicon to thereby form a laminated substrate. The glass substrate has a concave surface and a convex surface and has one or more marks that distinguish between the concave surface and the convex surface.

Abstract: The present invention provides a glass substrate in which in a step of sticking a glass substrate and a silicon-containing substrate to each other, bubbles hardly intrude therebetween. The present invention relates to a glass substrate for forming a laminated substrate by lamination with a silicon-containing substrate, having a warpage of 2 ?m to 300 ?m, and an inclination angle due to the warpage of 0.0004° to 0.12°.

Abstract: A light selective transmission type glass 10 according to the present invention includes: a glass substrate 12; and a light selective transmission layer 11 provided on at least one main surface of the glass substrate 12. The glass substrate 12 has an average thermal expansion coefficient ?50/100 at 50° C. to 100° C. of 2.70 ppm/° C. to 3.20 ppm/° C., an average thermal expansion coefficient ?200/300 at 200° C. to 300° C. of 3.45 ppm/° C. to 3.95 ppm/° C., a value ?200/300/?50/100 obtained by dividing the average thermal expansion coefficient ?200/300 at 200° C. to 300° C. by the average thermal expansion coefficient ?50/100 at 50° C. to 100° C. of 1.20 to 1.30, and a content of an alkali metal oxide being 0% to 0.1%.

Abstract: The present invention provides a glass substrate in which in a heat treatment step of sticking a silicon substrate and a glass substrate to each other, an alkali ion is hardly diffused into the silicon substrate, and a residual strain generated in the silicon substrate is small. A glass substrate of the present invention has: an average thermal expansion coefficient ?50/100 at 50° C. to 100° C. of 2.70 ppm/° C. to 3.20 ppm/° C.; an average thermal expansion coefficient ?200/300 at 200° C. to 300° C. of 3.45 ppm/° C. to 3.95 ppm/° C.; a value ?200/300/?50/100 obtained by dividing the average thermal expansion coefficient ?200/300 at 200° C. to 300° C. by the average thermal expansion coefficient ?50/100 at 50° C. to 100° C. of 1.20 to 1.30; and a content of an alkali metal oxide being 0% to 0.1% as expressed in terms of a molar percentage based on oxides.

Abstract: A tapered roller bearing includes: inner and outer rings; tapered rollers; and a retainer for the tapered rollers so as to prevent the rollers from being removed towards an outer diameter side. The inner ring has a small collar portion having a reduced diameter section neighboring an inner ring raceway. The reduced diameter section has an outer diameter surface of a diameter smaller than the remaining section of the small collar portion. An outer diameter of the remaining section of the small collar portion is larger than an inscribed circle diameter, and an outer diameter of the reduced diameter section is smaller than the inscribed circle diameter, which represents a diameter of a circle inscribed in the tapered rollers in an assembly of rollers and retainer, where the tapered rollers are retained by the retainer and the assembly has not been incorporated into the inner ring.

Abstract: A film is formed under vacuum by a step of purifying and/or flattening the base material (13) by irradiating the base material (13) with a gas cluster ion beam (4a); by a step of forming an intermediate layer film by evaporating/vaporizing an intermediate layer film forming material, allowing the evaporated/vaporized material to adhere to the surface of the base material (13), and irradiating the intermediate layer film forming material with a gas cluster ion beam (4a); and by evaporating/vaporizing a carbon film forming material containing a carbonaceous material containing substantially no hydrogen, and a boron material, allowing the evaporated/vaporized material to adhere to the surface of the intermediate layer film, and irradiating the carbon film forming material with a gas cluster ion beam (4a).

Abstract: A film is formed under vacuum by a step of purifying and/or flattening the base material (13) by irradiating the base material (13) with a gas cluster ion beam (4a); by a step of forming an intermediate layer film by evaporating/vaporizing an intermediate layer film forming material, allowing the evaporated/vaporized material to adhere to the surface of the base material (13), and irradiating the intermediate layer film forming material with a gas cluster ion beam (4a); and by evaporating/vaporizing a carbon film forming material containing a carbonaceous material containing substantially no hydrogen, and a boron material, allowing the evaporated/vaporized material to adhere to the surface of the intermediate layer film, and irradiating the carbon film forming material with a gas cluster ion beam (4a).