Abstract: A film-forming composition including one selected from among a hydrolyzable silane compound, a hydrolysate of the compound, and a hydrolysis condensate of the compound, and a solvent, the film-forming composition wherein: the hydrolyzable silane compound contains a hydrolyzable silane having a cyano group in the molecule and being of the following Formula (1): R1aR2bSi(R3)4?(a+b)??(1) (wherein R1 is a group bonded to a silicon atom and is an organic group containing a cyano group; R2 is a group bonded to a silicon atom via an Si—C bond, and is each independently a substitutable alkyl group, etc.; R3 is a group or atom bonded to a silicon atom, and is each independently a hydroxy group, an alkoxy group, an aralkyloxy group, an acyloxy group, or a halogen atom; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3).

Abstract: A film-forming composition is suitable as a resist underlayer film-forming composition capable of forming a resist underlayer film that exhibits favorable adhesion to an EUV resist and favorable etching processability. A film-forming composition includes: a hydrolysis condensate (A) of a hydrolyzable silane compound produced in the presence of a basic hydrolysis catalyst; a hydrolysis condensate (B) of a hydrolyzable silane compound produced in the presence of an acidic hydrolysis catalyst; and a solvent.

Abstract: A film-forming composition is suitable as a resist underlayer film-forming composition capable of forming an Si-containing resist underlayer film that exhibits favorable adhesion to an EUV resist and favorable etching processability because of high rate of etching with fluorine. A film-forming composition, for example, including a polymer of Formula (E1) and a solvent.

Abstract: Provided is a substrate treating composition. The substrate treating composition includes a first monomer, a second monomer and an acid. The first monomer is represented by Formula 1 and the second monomer is represented by Formula 7. The molecular weight of the solid content of the substrate treating composition including the first monomer, the second monomer and the acid is from about 1,000 g/mol to about 50,000 g/mol.

Abstract: Provided is a substrate treating composition. The substrate treating composition includes a first monomer, a second monomer and an acid. The first monomer is represented by Formula 1 and the second monomer is represented by Formula 7. The molecular weight of the solid content of the substrate treating composition including the first monomer, the second monomer and the acid is from about 1,000 g/mol to about 50,000 g/mol.

Abstract: Provided are: a primer for a semiconductor substrate that is a novel surface modifier for a resist pattern having a high adhesiveness to a resist film and enabling the formation of an excellent resist pattern with a thin film thickness; a laminated substrate wherein a surface modifier and a resist pattern are successively laminated on a substrate; a pattern formation method; and a method for manufacturing a semiconductor device. The surface modifier for a resist pattern, which is to be applied to a substrate prior to the formation of a resist pattern with a thickness of 0.10 um or less on the substrate to thereby enhance the adhesion between the substrate and the resist pattern, is characterized by comprising at least one member selected from among a compound represented by average compositional formula (1), a hydrolysate thereof and a hydrolytic condensate thereof. R1aR2b(OX)cSiO(4-a-b-c)/2 (1) [wherein: R1 represents a —(CH2)n group; Y represents a cyclohexenyl group, etc.

Abstract: Methods for forming a film with reduced formation of an edge reservoir at a periphery of a film in which the edge reservoir causes an unnecessary residue that cannot be removed by an etching process. A film forming composition for use in a lithography process includes a surfactant containing a polymer and an oligomer having a C3-5 perfluoroalkyl partial structure. The perfluoroalkyl partial structure may further include an alkyl partial structure. The surfactant is contained in an amount of 0.0001% by mass to 1.5% by mass based on the total solid content of the film forming composition. The film forming composition further includes a coating film resin, the coating film resin is a novolac resin, a condensation epoxy resin, a (meth)acrylic resin, a polyether-based resin, or a silicon-containing resin, etc. The formed film can be used as a resist underlayer film or a resist overlayer film.

Abstract: A method for flatly covering a semiconductor substrate using a silicon-containing composition. A method for producing a polysiloxane-coated substrate, including a first step for forming a first polysiloxane coating film by applying a first polysiloxane composition for coating to a stepped substrate and firing the composition thereon and a second step for forming a second film by applying a second polysiloxane composition for coating to the first film and firing the composition thereon. The second film has an Iso-dense bias of 50 nm or less; the first polysiloxane contains a hydrolysis-condensation product of a hydrolyzable silane starting material containing a first hydrolyzable silane having four hydrolyzable groups in each molecule at a ratio of 0-100% by mole in all the silanes; and the second polysiloxane contains silanol groups at a ratio of 30% by mole or less relative to Si atoms, while having a weight average molecular weight of 1,000-50,000.

Abstract: The present invention is related to a method for evaluation of drug efficacy of a medicine having a therapeutic or preventive effect against a disease related to EL activity wherein phosphatidylinositol or lysophosphatidylinositol is used as an indicator. The present invention is also related to a method for screening an inhibitor of EL activity using phosphatidylinositol and a kit for use in the method.

Abstract: A resist underlayer film-forming composition for EUV lithography showing good resist shape; including: a hydrolyzable organosilane, a hydrolyzed product thereof, or a hydrolyzed condensate thereof, as a silane; and a salt of a sulfonic acid ion containing a hydrocarbon group with an onium ion. The hydrolyzable organosilane includes at least one organic silicon compound selected from the group consisting of compounds of Formula (1): R1aSi(R2)4-a??Formula (1) and compounds of Formula (2): R3cSi(R4)3-c2Yb??Formula (2) a hydrolyzed product thereof, or a hydrolyzed condensate thereof.

Abstract: The invention provides a composition for coating a resist pattern and reversing the pattern by utilizing a difference in etching rates. A composition for applying to a resist pattern includes a component (A) which is at least one compound selected from the group consisting of a metal oxide (a1), a polyacid (a2), a polyacid salt (a3), a hydrolyzable silane (a4), a hydrolysis product (a5) of the hydrolyzable silane, and a hydrolysis condensate (a6) of the hydrolyzable silane; and a component (B), which is an aqueous solvent, in which the hydrolyzable silane (a4) is (i) a hydrolyzable silane containing an organic group having an amino group, (ii) a hydrolyzable silane containing an organic group having an ionic functional group, (iii) a hydrolyzable silane containing an organic group having hydroxy group, or (iv) a hydrolyzable silane containing an organic group having a functional group convertible to hydroxy group.

Abstract: A composition applied over a resist pattern includes a modified polysiloxane in which some of silanol groups of a polysiloxane containing a hydrolysis condensate of a hydrolyzable silane are capped, and a solvent, wherein a ratio of silanol groups to all Si atoms contained in the modified polysiloxane is 40 mol % or less. The modified polysiloxane ratio of the silanol groups is adjusted to a desired ratio by reacting the silanol groups of the polysiloxane with an alcohol. A method for producing a semiconductor device having the steps of forming a resist film on a substrate, forming a resist pattern by exposing and developing the resist film, applying the composition over the resist pattern during or after development, and reversing a pattern by removing the resist pattern by etching.

Abstract: A composition for flattening uneven substrates. The composition for flattening uneven substrates, which is applied on an organic pattern, includes a solvent and a polysiloxane including a hydrolysis condensate of a hydrolyzable silane, wherein the polysiloxane includes silanol groups in a proportion of 20 mol % or less with respect to Si atoms, and the weight-average molecular weight of the polysiloxane is 1,000-50,000.

Abstract: Provided is a substrate treating composition. The substrate treating composition includes a first monomer, a second monomer and an acid. The first monomer is represented by Formula 1 and the second monomer is represented by Formula 7. The molecular weight of the solid content of the substrate treating composition including the first monomer, the second monomer and the acid is from about 1,000 g/mol to about 50,000 g/mol.

Abstract: A coating composition for pattern inversion that fills a gap in an organic underlayer film pattern formed on a substrate to be processed by transferring a resist pattern to an underlayer and forms a flat polysiloxane film, the coating composition including a polysiloxane obtained by a reaction of an alcohol with a silanol group in a hydrolysis-condensate of a hydrolysable silane having a hydrolysable silane containing in the molecule four hydrolysable groups, in a ratio of 50% by mole to 100% by mole relative to the total amount of silanes. The hydrolysable silane is represented by Formula (1): R1aSi(R2)4-a??Formula (1) and contains 50% by mole to 100% by mole of a hydrolysable silane in which a is 0 and 0% by mole to 50% by mole of a hydrolysable silane in which a is 1 or 2. The alcohol is propylene glycol monomethyl ether, propylene glycol monoethyl ether, or 3-methoxybutanol.

Abstract: Method for producing coating composition applied to patterned resist film in lithography process for solvent development to reverse pattern. The method including: step obtaining hydrolysis condensation product by hydrolyzing and condensing hydrolyzable silane in non-alcoholic hydrophilic solvent; step of solvent replacement wherein non-alcoholic hydrophilic solvent replaced with hydrophobic solvent for hydrolysis condensation product. Method for producing semiconductor device, including: step of applying resist composition to substrate and forming resist film; step of exposing and developing formed resist film; step applying composition obtained by above production method to patterned resist film obtained during or after development in step, forming coating film between patterns; step of removing patterned resist film by etching and reversing patterns. Production method that exposure is performed using ArF laser (with wavelength of 193 nm) or EUV (with wavelength of 13.5 nm).

Abstract: A method for flatly covering a semiconductor substrate using a silicon-containing composition. A method for producing a polysiloxane-coated substrate, including a first step for forming a first polysiloxane coating film by applying a first polysiloxane composition for coating to a stepped substrate and firing the composition thereon and a second step for forming a second film by applying a second polysiloxane composition for coating to the first film and firing the composition thereon. The second film has an Iso-dense bias of 50 nm or less; the first polysiloxane contains a hydrolysis-condensation product of a hydrolyzable silane starting material containing a first hydrolyzable silane having four hydrolyzable groups in each molecule at a ratio of 0-100% by mole in all the silanes; and the second polysiloxane contains silanol groups at a ratio of 30% by mole or less relative to Si atoms, while having a weight average molecular weight of 1,000-50,000.

Abstract: A composition applied over a resist pattern includes a modified polysiloxane in which some of silanol groups of a polysiloxane containing a hydrolysis condensate of a hydrolyzable silane are capped, and a solvent, wherein a ratio of silanol groups to all Si atoms contained in the modified polysiloxane is 40 mol % or less. The modified polysiloxane ratio of the silanol groups is adjusted to a desired ratio by reacting the silanol groups of the polysiloxane with an alcohol. A method for producing a semiconductor device having the steps of forming a resist film on a substrate, forming a resist pattern by exposing and developing the resist film, applying the composition over the resist pattern during or after development, and reversing a pattern by removing the resist pattern by etching.

Abstract: There is provided a new coating liquid for resist pattern coating.

Abstract: The present invention pertains to the diagnosis of coronary artery disease. Specifically, the present invention pertains to the diagnosis of coronary artery disease using phosphatidylinositol (36:5) or lysophosphatidylinositol (20:5) as a molecular marker.