Abstract: A silicon-containing resist underlayer film-forming composition for forming a silicon-containing resist underlayer film between a metal-containing resist film and a substrate, the silicon-containing resist underlayer film-forming composition including: a component [A]: a polysiloxane; and a component [C]: a solvent, in which the polysiloxane contains a structural unit derived from a hydrolyzable silane (A) represented by the following Formula (A-1): where in Formula (A-1), a represents an integer of 1 to 3, b represents an integer of 0 to 2, a+b represents an integer of 1 to 3, and R1 represents an organic group having an unsaturated bond and a ring structure.

Abstract: A silicon-containing resist underlayer film forming composition for forming a resist underlayer film which is able to be removed not only by a conventional dry etching method but also by a wet etching method that uses a chemical agent, and which has excellent lithography characteristics, while enabling the achievement of a high etching rate during wet etching. A silicon-containing resist underlayer film forming composition which contains (A) a polysiloxane, (B) nitric acid, (C) a bisphenol compound and (D) a solvent.

Abstract: A silicon-containing resist underlayer film forming composition that includes a hydrolysis condensate of a hydrolyzable silane represented by Formula (1) or a hydrolyzable silane mixture containing a hydrolyzable silane represented by Formula (2) is the silicon-containing resist underlayer film forming composition for forming a silicon-containing resist underlayer film soluble in a basic chemical solution.

Abstract: A surface modifier for a resist pattern, which is to be applied to a substrate prior to the formation of a resist pattern with a thickness of 0.10 ?m or less on the substrate to thereby enhance the adhesion between the substrate and the resist pattern, including at least one member selected from among a compound represented by average compositional formula (1), a hydrolysate thereof and a hydrolytic condensate thereof: R1aR2b(OX)cSiO(4?a?b?c)/2 (1), wherein: R1 represents a —(CH2)nY group; Y represents a cyclohexenyl group, etc.; n is an integer of 0-4; R2 represents a monovalent C1-4 hydrocarbon group; X represents a hydrogen atom or a monovalent C1-4 hydrocarbon group; a is a numerical value of 1-2; b is a numerical value of 0-1; and c is a numerical value of 0-2, provided that a+b+c is not greater than 4.

Abstract: A silicon-containing resist underlayer film having a maximum optical absorption coefficient (k value) in a wavelength range from 220 nm to 300 nm of 0.05 or greater.

Abstract: A silicon-containing underlayer film-forming composition that can form a self-assembled film wherein a desired vertical pattern is induced, and a pattern formation method using the composition. A composition for forming a silicon-containing underlayer film for a self-assembled film, the composition being characterized by including: a polysiloxane; and a solvent, but not including a strongly acidic additive.

Abstract: A coating composition for pattern inversion that fills a gap in an organic underlayer film pattern formed on a substrate to be processed by transferring a resist pattern to an underlayer and forms a flat polysiloxane film, the coating composition including a polysiloxane obtained by a reaction of an alcohol with a silanol group in a hydrolysis-condensate of a hydrolysable silane having a hydrolysable silane containing in the molecule four hydrolysable groups, in a ratio of 50% by mole to 100% by mole relative to the total amount of silanes. The hydrolysable silane is represented by Formula (1): R1aSi(R2)4-a??Formula (1) and contains 50% by mole to 100% by mole of a hydrolysable silane in which a is 0 and 0% by mole to 50% by mole of a hydrolysable silane in which a is 1 or 2. The alcohol is propylene glycol monomethyl ether, propylene glycol monoethyl ether, or 3-methoxybutanol.

Abstract: A silicon-containing resist underlayer film-forming composition for forming a resist underlayer film that exhibits excellent lithographic properties and achieves a high etching rate in a wet etching process. A silicon-containing resist underlayer film-forming composition including: [A] a polysiloxane containing a siloxane unit structure having at least two hydroxy groups; [B] nitric acid; and [C] a solvent.

Abstract: A composition for forming a silicon-containing resist underlayer film, the composition including: component [A]: a polysiloxane; and component [C]: a solvent, wherein the polysiloxane contains a constituent unit derived from a hydrolyzable silane (A) having an alkyl iodide group.

Abstract: A composition for forming a silicon-containing resist underlayer film, the composition containing: a component of a polysiloxane; a component of at least one selected from the group consisting of a sulfonic acid compound and an acid having a pKa from ?15.0 to 1.2; and a component of a solvent.

Abstract: A composition forms a silicon-containing underlayer film, the composition being for forming a silicon-containing resist underlayer film that enables formation of a good resist pattern without pattern collapse even when having a thinner thickness compared to conventional products, such as a thickness of 10 nm or less. The composition for forming a silicon-containing underlayer film contains: [A] a polysiloxane having a weight average molecular weight of 1,800 or less as determined by gel permeation chromatography (GPC) analysis in terms of polystyrene, and the amount of a component having a molecular weight of more than 2,500 is less than 20% in an integral molecular weight distribution curve prepared by gel permeation chromatography (GPC) analysis in terms of polystyrene; and [B] a solvent.

Abstract: A substrate with a thin film, including the thin film including a Si—R1 group of a compound represented by Formula (1), and the substrate including the thin film including the Si—R1 group, the thin film being disposed on a surface of the substrate, where in Formula (1), R1 represents a monovalent organic group that bonds to Si; R2 represents a monovalent organic group that bonds to Si; R3 represents an alkoxy group, an acyloxy group, or a halogen atom that bonds to Si; n represents an integer from 0 to 2; when n is 2, R2 may be the same or different; when n is 0 or 1, R3 may be the same or different; and when n is 1, R1 and R2 may bond together to form a ring structure. Si(R1)(R2)(R3)3-n??. . .

Abstract: A resist underlayer film-forming composition capable of reducing occurrence of defects caused by microparticles or the like that may be generated during formation of a coating film. A silicon-containing resist underlayer film-forming composition including: [A]a polysiloxane; [B] a glycol compound having a normal boiling point of 230.0° C. or higher and being of the following Formula (1): (wherein R1 and R2 are each independently a hydrogen atom, a C1-4 alkyl group, or a C3-4 acyl group; and n is an integer of 3 or more); and [C] a solvent (except for a compound corresponding to the compound [B]).

Abstract: A composition for forming a film capable of effectively functioning as a resist underlayer film exhibiting resistance to a solvent in a composition for forming a resist film serving as an upper layer, favorable etching property to a fluorine-containing gas, and favorable lithographic property.

Abstract: R1aR2bSi(R3)4?(a+b) ??(1) A composition for a silicon-containing resist underlying film and for forming a resist underlying film that can be removed by a conventional method employing dry etching, but also by a method employing wet etching using a chemical liquid in a step for processing a semiconductor substrate or the like; and a composition for forming a resist underlying film for lithography and for forming a resist underlying film that has excellent storage stability and produces less residue in a dry etching step. A composition for forming a resist underlying film, the composition including a hydrolysis condensate of a hydrolysable silane mixture containing an alkyltrialkoxy silane and a hydrolysable silane of formula (1), wherein the contained amount of the alkyltrialkoxy silane in the mixture is 0 mol % or more but less than 40 mol % with respect to the total amount by mole of all of the hydrolysable silane contained in the mixture.

Abstract: A film-forming composition includes a solvent and hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane compound by using an acidic compound containing two or more acidic groups. The hydrolyzable silane compound contains an amino-group-containing silane with formula (1). R1 is an organic group containing an amino group. R2 is a substitutable alkyl, substitutable aryl, substitutable aralkyl, substitutable halogenated alkyl, substitutable halogenated aryl, substitutable halogenated aralkyl, substitutable alkoxyalkyl, substitutable alkoxyaryl, substitutable alkoxyaralkyl, or substitutable alkenyl group, or an organic group containing an epoxy, acryloyl, methacryloyl, mercapto, or a cyano group. R3 is an alkoxy, aralkyloxy, or acyloxy group or halogen atom. a is an integer of 1 or 2, b of 0 or 1; and a and b satisfy a relation of a+b?2.

Abstract: A film-forming composition for forming a resist underlayer film for a solvent development type resist that is capable of forming a good resist pattern which contains a hydrolysis-condensation product of a hydrolyzable silane compound, at least one substance that is selected from the group consisting of an aminoplast crosslinking agent and a phenoplast crosslinking agent, and a solvent, and wherein the hydrolyzable silane compound contains a hydrolyzable silane represented by formula (1).

Abstract: A composition for flattening uneven substrates. The composition for flattening uneven substrates, which is applied on an organic pattern, includes a solvent and a polysiloxane including a hydrolysis condensate of a hydrolyzable silane, wherein the polysiloxane includes silanol groups in a proportion of 20 mol % or less with respect to Si atoms, and the weight-average molecular weight of the polysiloxane is 1,000-50,000.

Abstract: Method for producing coating composition applied to patterned resist film in lithography process for solvent development to reverse pattern. The method including: step obtaining hydrolysis condensation product by hydrolyzing and condensing hydrolyzable silane in non-alcoholic hydrophilic solvent; step of solvent replacement wherein non-alcoholic hydrophilic solvent replaced with hydrophobic solvent for hydrolysis condensation product. Method for producing semiconductor device, including: step of applying resist composition to substrate and forming resist film; step of exposing and developing formed resist film; step applying composition obtained by above production method to patterned resist film obtained during or after development in step, forming coating film between patterns; step of removing patterned resist film by etching and reversing patterns. Production method that exposure is performed using ArF laser (with wavelength of 193 nm) or EUV (with wavelength of 13.5 nm).

Abstract: A film with reduced formation of an edge reservoir at a periphery of a film in which the edge reservoir causes an unnecessary residue that cannot be removed by an etching process, and a method for forming the film. A film forming composition for use in a lithography process includes a surfactant containing a polymer and an oligomer having a C3-5 perfluoroalkyl partial structure. The perfluoroalkyl partial structure may further include an alkyl partial structure. The surfactant is contained in an amount of 0.0001% by mass to 1.5% by mass based on the total solid content of the film forming composition. The film forming composition further includes a coating film resin, the coating film resin is a novolac resin, a condensation epoxy resin, a (meth)acylic resin, a polyether-based resin, or a silicon-containing resin, etc. The formed film can be used as a resist underlayer film or a resist overlayer film.