Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting element that emits ultraviolet radiation at a wavelength of not more than 360 nm, a package substrate that houses the semiconductor light-emitting element, a thin film layer that is formed on the package substrate and has a predetermined thickness, and a sealing material made of a silicone resin which is provided on the thin film layer so as to have a lens shape and seals the semiconductor light-emitting element, in which the sealing material forms a contact angle of not less than 15° with the thin film layer.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting element that emits ultraviolet radiation at a wavelength of not more than 360 nm, a package substrate that houses the semiconductor light-emitting element, a thin film layer that is formed on the package substrate and has a predetermined thickness, and a sealing material made of a silicone resin which is provided on the thin film layer so as to have a lens shape and seals the semiconductor light-emitting element, in which the sealing material forms a contact angle of not less than 15° with the thin film layer.

Abstract: In an X-ray inspection, a detection unit with a detector is provided. The detection unit detects transmitted amounts of the X-rays generated by an X-ray generator and transmitted through the object in each of n-number X-ray energy bins (n is a positive integer of 2 or more) which are set in advance to the X-rays, and outputs detection signals corresponding to the transmitted amounts. An information acquisition unit acquires, based on the detection signal, information showing a thickness t of the object and an average linear attenuation coefficient ? in a transmission direction of fluxes of the X-rays, in each of the energy bins. A pixel data calculation unit calculates, based on the acquired information, pixel data composed of pixel values each obtained by multiplying addition information by the thickness t. Addition information is obtained by mutual addition of the average linear attenuation coefficients ? in the respective energy bins.

Abstract: An electronic circuit includes a cell array including memory cells each including a bistable circuit that includes first and second inverter circuits, each having a first mode characterized by there being substantially no hysteresis in transfer characteristics and a second mode characterized by there being hysteresis in the transfer characteristics, and being switchable between the first and second modes, and a control circuit configured to, after powering off a first memory cell that store data that are not required to be retained, put the bistable circuit in a remaining second memory cell into the second mode, and supply a second power supply voltage that allows the bistable circuit in the second mode to retain data and is lower than a first power supply voltage supplied to the bistable circuit when data is read and/or written, to the bistable circuit in the second memory cell while maintaining the second mode.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting element for emitting ultraviolet light, a mounting substrate on which the semiconductor light-emitting element is mounted, bumps electrically connecting the semiconductor light-emitting element to the mounting substrate, a first sealing member sealing a connection region in which the semiconductor light-emitting element and the mounting substrate are connected by the bumps, and a second sealing member being provided on the first sealing member and sealing the semiconductor light-emitting element

Abstract: A higher accuracy beam hardening correction with a low calculation load is performed with objects whose elements have a wider range of effective atomic numbers Zeff, thereby contributing to presentation of more quantitative X-ray images. Of two or more X-ray energy bins, two X-ray bins are selected to normalize X-ray attenuation amount ?t in those bins such that one or more normalized X-ray attenuation amounts are obtained at each pixel areas. From reference information indicating a theoretical relationship of correspondence between the normalized X-ray attenuation amounts and effective atomic numbers of elements, one ore more effective atomic numbers are estimated every pixel area. Among the one or more effective atomic numbers (ZHigh, ZLow) and an effective atomic number (Zm) preset for the beam hardening correction, two or more atomic numbers are subjected to their equality determination.

Abstract: In a data processing apparatus, image data are calculated based on photon counts of an X-ray beam transmitted through an object. Based on the image data, X-ray attenuation information is calculated. The attenuation information includes i) inherent information inherently depending on a type or a property of the object, the inherent information being indicated by a quantity of a vector in an n-dimensional coordinate whose dimension is equal in number to the n-piece energy ranges; and ii) associated information being associated with the inherent information and depending on a length of a path along which the X-ray beam passes though the object. From the attenuation information, only the inherent information is produced which is independent of the associated information. Scattering points corresponding to the inherent information are calculated to be mapped in the n-dimensional coordinate or in a coordinate whose dimension is less than the n-dimensional coordinate.

Abstract: Based on counts detected by a photon counting detector, a characteristic of X-ray attenuation amounts ?t is acquired for each X-ray energy bin. This characteristic is defined by a plurality of mutually different known thicknesses t and linear attenuation coefficients in the X-ray transmission direction. This substance is composed of a material which is included in an object and which is the same in type as the object or which can be regarded as being similar to the object in terms of the effective atomic number. Correcting data for replacing the characteristic of the X-ray attenuation amounts ?t by a linear target characteristic are calculated. The linear target characteristic is set to pass through the origin of a two-dimensional coordinate having a lateral axis assigned to thicknesses t and a longitudinal axis assigned to the X-ray attenuation amounts ?t. The correcting data are calculated for each X-ray energy bin.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting element that emits ultraviolet light, a package substrate mounting the semiconductor light-emitting element, a sealing resin that seals the semiconductor light-emitting element, and a coat film further provided between a light output surface of the semiconductor light-emitting element and the sealing resin. The refractive index of the coat film and the refractive index of the sealing resin are smaller than the refractive index of a member constituting the light output surface of the semiconductor light-emitting element, and the refractive index difference between the coat film and the sealing resin is not more than 0.15.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting element that emits ultraviolet radiation at a wavelength of not more than 360 nm, a package substrate that houses the semiconductor light-emitting element, a thin film layer that is formed on the package substrate and has a predetermined thickness, and a sealing material made of a silicone resin which is provided on the thin film layer so as to have a lens shape and seals the semiconductor light-emitting element, in which the sealing material forms a contact angle of not less than 15° with the thin film layer.

Abstract: A higher accuracy beam hardening correction with a low calculation load is performed with objects whose elements have a wider range of effective atomic numbers Zeff, thereby contributing to presentation of more quantitative X-ray images. Of two or more X-ray energy bins, two X-ray bins are selected to normalize X-ray attenuation amount ?t in those bins such that one or more normalized X-ray attenuation amounts are obtained at each pixel areas. From reference information indicating a theoretical relationship of correspondence between the normalized X-ray attenuation amounts and effective atomic numbers of elements, one ore more effective atomic numbers are estimated every pixel area. Among the one or more effective atomic numbers (ZHigh, ZLow) and an effective atomic number (Zm) preset for the beam hardening correction, two or more atomic numbers are subjected to their equality determination.