Patents by Inventor Shuji Azumo

Shuji Azumo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230009551
    Abstract: A film formation method includes: preparing a substrate including, on its surface, a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed; selectively forming a self-assembled monolayer in the first region, among the first region and the second region; and forming a desired target film in the second region, among the first region and the second region, by using the self-assembled monolayer formed in the first region, wherein the selectively forming the self-assembled monolayer includes: selectively forming the self-assembled monolayer in the first region by using a first processing liquid including a first raw material of the self-assembled monolayer; and modifying the self-assembled monolayer, by using a second processing liquid including a second raw material of the self-assembled monolayer at a concentration different from a concentration of the first processing liquid.
    Type: Application
    Filed: December 14, 2020
    Publication date: January 12, 2023
    Inventors: Yumiko KAWANO, Shinichi IKE, Shuji AZUMO
  • Publication number: 20220341033
    Abstract: The film-forming method of forming a target film on a substrate includes preparing the substrate including a first material layer formed on a surface of a first region, and including a second material layer, which is different from the first material, formed on a surface of a second region; controlling the temperature of the substrate to a first temperature; forming the self-assembled film on a surface of the first material layer at the first temperature by supplying a raw-material gas for a self-assembled film; controlling the temperature of the substrate to a second temperature higher than the first temperature; and further forming a self-assembled film at the second temperature on the first material layer on which the self-assembled film has been formed at the first temperature by supplying the raw-material gas for the self-assembled film.
    Type: Application
    Filed: September 16, 2020
    Publication date: October 27, 2022
    Inventors: Shinichi IKE, Shuji AZUMO, Yumiko KAWANO, Tsutomu HIROKI
  • Publication number: 20220336205
    Abstract: A film formation method for selectively forming a film on a substrate includes: a preparation step of preparing a substrate having a surface on which a first film and a second film are exposed; a first film forming step of supplying a compound for forming a self-assembled monolayer onto the substrate to form the self-assembled monolayer on the first film, the compound having a functional group including fluorine and carbon and suppressing formation of a third film; a second film forming step of forming the third film on the second film; and a first removal step of removing the third film formed in a vicinity of the self-assembled monolayer by irradiating the surface of the substrate with ions or active species, wherein the third film is a film which forms a volatile compound more easily than the first film by being bonded to fluorine and carbon in the self-assembled monolayer.
    Type: Application
    Filed: August 24, 2020
    Publication date: October 20, 2022
    Inventors: Kenji OUCHI, Shuji AZUMO, Yumiko KAWANO, Shinichi IKE
  • Patent number: 11417514
    Abstract: There is provided a film forming method, including: forming a film containing silicon, carbon and nitrogen on a substrate in a first process; and oxidizing the film with an oxidizing agent containing a hydroxy group and subsequently supplying a nitriding gas to the substrate in a second process.
    Type: Grant
    Filed: March 11, 2020
    Date of Patent: August 16, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuichiro Wagatsuma, Toyohiro Kamada, Shinichi Ike, Shuji Azumo
  • Publication number: 20220186362
    Abstract: A film formation method includes: providing a substrate including a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed; forming an intermediate film selectively in the second region from the first region and the second region by supplying a processing gas to the substrate; forming a self-assembled monolayer in the first region and the second region after forming the intermediate film; removing the intermediate film and the self-assembled monolayer from the second region by heating the substrate to sublimate the intermediate film; and forming, after sublimation of the intermediate film, a target film selectively in the second region from the first region and the second region in a state in which the self-assembled monolayer is left in the first region.
    Type: Application
    Filed: March 3, 2020
    Publication date: June 16, 2022
    Inventors: Shuji AZUMO, Shinichi IKE, Yumiko KAWANO
  • Publication number: 20220189778
    Abstract: A method of selectively forming a film on a substrate includes: a preparation process of preparing a substrate having a surface to which a metal film and an insulating film are exposed; a first removal process of removing a natural oxide film on the metal film; a first film forming process of forming a self-assembled monolayer, which suppresses formation of a titanium nitride film, on the insulating film by providing the substrate with a compound for forming the self-assembled monolayer, the compound having a functional group containing fluorine and carbon; a second film forming process of forming a titanium nitride film on the metal film; an oxidation process of oxidizing the surface of the substrate; and a second removal process of removing a titanium oxide film, which is formed on the metal film and the self-assembled monolayer, by providing the surface of the substrate with the compound.
    Type: Application
    Filed: February 28, 2020
    Publication date: June 16, 2022
    Inventors: Shinichi IKE, Shuji AZUMO, Yumiko KAWANO, Hiroki MURAKAMI
  • Publication number: 20220189777
    Abstract: A film formation method includes: providing a substrate including a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed; forming a target film selectively in the first region among the first region and the second region; and removing a product produced in the second region in the forming the target film by supplying ClF3 gas to the substrate.
    Type: Application
    Filed: March 4, 2020
    Publication date: June 16, 2022
    Inventors: Yumiko KAWANO, Shuji AZUMO, Hiroki MURAKAMI
  • Publication number: 20220181144
    Abstract: There is provided a film formation method. The method comprises: preparing a substrate having a first region on which an oxide formed by oxidization of a surface of a conductive material is exposed and a second region on which an insulating material is exposed; replacing a film of the oxide with a film of boron oxide by supplying a boron halide gas to the substrate; etching the boron oxide film in the first region and forming a self-assembled monolayer film in the second region by supplying a gas of a fluorine-containing silane compound to the substrate; and forming a conductive target film selectively in the first region, from the first region and the second region, using the self-assembled monolayer film formed in the second region, the first region having the conductive material exposed thereon.
    Type: Application
    Filed: March 12, 2020
    Publication date: June 9, 2022
    Inventors: Yumiko KAWANO, Shuji AZUMO, Shinichi IKE
  • Publication number: 20210398846
    Abstract: A substrate processing method for area selective deposition. The method includes providing a substrate containing a metal film, a metal-containing liner, and a dielectric film, exposing the substrate to a plasma-excited cleaning gas containing 1) N2 gas and H2 gas, 2) N2 gas followed by H2 gas, or 3) H2 gas followed by N2 gas, forming a blocking layer on the metal film and on the metal-containing liner, and selectively depositing a material film on the dielectric film.
    Type: Application
    Filed: June 11, 2021
    Publication date: December 23, 2021
    Inventors: Kandabara N. Tapily, Shuji Azumo, Yumiko Kawano, Shinichi Ike
  • Publication number: 20210246547
    Abstract: A film forming method includes: preparing a substrate having a metal layer formed on a surface of a first region and an insulating layer formed on a surface of a second region, wherein the metal layer is formed of a first metal; forming a self-assembled film on a surface of the metal layer by supplying a source gas of the self-assembled film; after forming the self-assembled film, forming an oxide film of a second metal on the insulating layer through an atomic layer deposition method by repeating a supply of a precursor gas containing the second metal and a supply of an oxidizing gas; and reducing an oxide film of the first metal formed on a surface of the first metal by supplying a reducing gas after the supply of the oxidizing gas and before the supply of the precursor gas.
    Type: Application
    Filed: February 3, 2021
    Publication date: August 12, 2021
    Inventors: Shuji AZUMO, Shinichi IKE, Yumiko KAWANO
  • Patent number: 11041239
    Abstract: A method for forming a SiC film on a target substrate by ALD, comprises: activating a surface of the target substrate by activation gas plasma which is plasmatized an activation gas; and forming a SiC film by supplying a source gas containing a precursor represented by a chemical formula RSiX13 or RSiHClX2 onto the target substrate whose the surface is activated by activating the surface of the target substrate, where, R is an organic group having an unsaturated bond, X1 is selected from a group consisting of H, F, Cl, Br and I, and X2 is one selected from a group consisting of Cl, Br and I.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: June 22, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Taiki Katou, Shuji Azumo, Yusaku Kashiwagi
  • Publication number: 20210087691
    Abstract: A film forming method for forming an object film on a substrate including: providing the substrate including an oxide layer of a first material formed on a layer of the first material formed on a surface of a first area, and a layer of a second material formed on a surface of a second area, the second material being different from the first material; reducing the oxide layer; oxidizing a surface of the layer of the first material after reducing the oxide layer; and forming a self-assembled monolayer on the surface of the layer of the first material by supplying a raw material gas of the self-assembled monolayer after oxidizing the surface of the layer of the first material.
    Type: Application
    Filed: September 22, 2020
    Publication date: March 25, 2021
    Inventors: Shuji AZUMO, Shinichi IKE, Yumiko KAWANO
  • Patent number: 10833166
    Abstract: A semiconductor device has an MIS structure that includes a semiconductor layer, a gate insulating film on the semiconductor layer, and a gate electrode on the gate insulating film. The gate insulating film has a layered structure that includes a base SiO2 layer and a high-k layer on the base SiO2 layer and containing Hf. The gate electrode has a portion made of a metal material having a work function of higher than 4.6 eV, the portion being in contact with at least the high-k layer.
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: November 10, 2020
    Assignee: ROHM CO., LTD.
    Inventors: Kenji Yamamoto, Masatoshi Aketa, Hirokazu Asahara, Takashi Nakamura, Takuji Hosoi, Heiji Watanabe, Takayoshi Shimura, Shuji Azumo, Yusaku Kashiwagi
  • Patent number: 10790138
    Abstract: There is provided a method for forming a target film on a substrate comprising: preparing the substrate having a first substrate region and a second substrate region that has at least two types of surfaces formed of materials different from a material of the first substrate region; selectively forming, on the surfaces of the second substrate region, an intermediate film capable of adsorbing a first self-assembled monolayer that inhibits formation of the target film on the second substrate region; selectively adsorbing the first self-assembled monolayer on a surface of the intermediate film; and selectively forming the target film on a surface of the first substrate region.
    Type: Grant
    Filed: June 26, 2019
    Date of Patent: September 29, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Shuji Azumo
  • Publication number: 20200294798
    Abstract: There is provided a film forming method, including: forming a film containing silicon, carbon and nitrogen on a substrate in a first process; and oxidizing the film with an oxidizing agent containing a hydroxy group and subsequently supplying a nitriding gas to the substrate in a second process.
    Type: Application
    Filed: March 11, 2020
    Publication date: September 17, 2020
    Inventors: Yuichiro WAGATSUMA, Toyohiro KAMADA, Shinichi IKE, Shuji AZUMO
  • Publication number: 20200063262
    Abstract: A method for forming a SiC film on a target substrate by ALD, comprises: activating a surface of the target substrate by activation gas plasma which is plasmatized an activation gas; and forming a SiC film by supplying a source gas containing a precursor represented by a chemical formula RSiX13 or RSiHClX2 onto the target substrate whose the surface is activated by activating the surface of the target substrate, where, R is an organic group having an unsaturated bond, X1 is selected from a group consisting of H, F, Cl, Br and I, and X2 is one selected from a group consisting of Cl, Br and I.
    Type: Application
    Filed: November 16, 2017
    Publication date: February 27, 2020
    Inventors: Taiki KATOU, Shuji AZUMO, Yusaku KASHIWAGI
  • Publication number: 20200006057
    Abstract: There is provided a method for forming a target film on a substrate comprising: preparing the substrate having a first substrate region and a second substrate region that has at least two types of surfaces formed of materials different from a material of the first substrate region; selectively forming, on the surfaces of the second substrate region, an intermediate film capable of adsorbing a first self-assembled monolayer that inhibits formation of the target film on the second substrate region; selectively adsorbing the first self-assembled monolayer on a surface of the intermediate film; and selectively forming the target film on a surface of the first substrate region.
    Type: Application
    Filed: June 26, 2019
    Publication date: January 2, 2020
    Inventor: Shuji AZUMO
  • Patent number: 10490443
    Abstract: A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO2, Pt, Pd, CuO, and CuO2, using an Ru(EtCp)2 gas and an O2 gas; and selectively forming a first SiO2-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiO2 film only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: November 26, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yumiko Kawano, Shuji Azumo, Hiroki Murakami, Michitaka Aita, Tadahiro Ishizaka, Koji Akiyama, Yusaku Kashiwagi, Hajime Nakabayashi
  • Publication number: 20190355828
    Abstract: A semiconductor device has an MIS structure that includes a semiconductor layer, a gate insulating film on the semiconductor layer, and a gate electrode on the gate insulating film. The gate insulating film has a layered structure that includes a base SiO2 layer and a high-k layer on the base SiO2 layer and containing Hf. The gate electrode has a portion made of a metal material having a work function of higher than 4.6 eV, the portion being in contact with at least the high-k layer.
    Type: Application
    Filed: July 13, 2017
    Publication date: November 21, 2019
    Applicant: ROHM CO., LTD.
    Inventors: Kenji YAMAMOTO, Masatoshi AKETA, Hirokazu ASAHARA, Takashi NAKAMURA, Takuji HOSOI, Heiji WATANABE, Takayoshi SHIMURA, Shuji AZUMO, Yusaku KASHIWAGI
  • Publication number: 20190096750
    Abstract: A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO2, Pt, Pd, CuO, and CuO2, using an Ru(EtCp)2 gas and an O2 gas; and selectively forming a first SiO2-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiO2 film only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.
    Type: Application
    Filed: September 27, 2018
    Publication date: March 28, 2019
    Inventors: Yumiko KAWANO, Shuji AZUMO, Hiroki MURAKAMI, Michitaka AITA, Tadahiro ISHIZAKA, Koji AKIYAMA, Yusaku KASHIWAGI, Hajime NAKABAYASHI