Patents by Inventor Shuji Azumo
Shuji Azumo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20210087691Abstract: A film forming method for forming an object film on a substrate including: providing the substrate including an oxide layer of a first material formed on a layer of the first material formed on a surface of a first area, and a layer of a second material formed on a surface of a second area, the second material being different from the first material; reducing the oxide layer; oxidizing a surface of the layer of the first material after reducing the oxide layer; and forming a self-assembled monolayer on the surface of the layer of the first material by supplying a raw material gas of the self-assembled monolayer after oxidizing the surface of the layer of the first material.Type: ApplicationFiled: September 22, 2020Publication date: March 25, 2021Inventors: Shuji AZUMO, Shinichi IKE, Yumiko KAWANO
-
Patent number: 10833166Abstract: A semiconductor device has an MIS structure that includes a semiconductor layer, a gate insulating film on the semiconductor layer, and a gate electrode on the gate insulating film. The gate insulating film has a layered structure that includes a base SiO2 layer and a high-k layer on the base SiO2 layer and containing Hf. The gate electrode has a portion made of a metal material having a work function of higher than 4.6 eV, the portion being in contact with at least the high-k layer.Type: GrantFiled: July 13, 2017Date of Patent: November 10, 2020Assignee: ROHM CO., LTD.Inventors: Kenji Yamamoto, Masatoshi Aketa, Hirokazu Asahara, Takashi Nakamura, Takuji Hosoi, Heiji Watanabe, Takayoshi Shimura, Shuji Azumo, Yusaku Kashiwagi
-
Patent number: 10790138Abstract: There is provided a method for forming a target film on a substrate comprising: preparing the substrate having a first substrate region and a second substrate region that has at least two types of surfaces formed of materials different from a material of the first substrate region; selectively forming, on the surfaces of the second substrate region, an intermediate film capable of adsorbing a first self-assembled monolayer that inhibits formation of the target film on the second substrate region; selectively adsorbing the first self-assembled monolayer on a surface of the intermediate film; and selectively forming the target film on a surface of the first substrate region.Type: GrantFiled: June 26, 2019Date of Patent: September 29, 2020Assignee: TOKYO ELECTRON LIMITEDInventor: Shuji Azumo
-
Publication number: 20200294798Abstract: There is provided a film forming method, including: forming a film containing silicon, carbon and nitrogen on a substrate in a first process; and oxidizing the film with an oxidizing agent containing a hydroxy group and subsequently supplying a nitriding gas to the substrate in a second process.Type: ApplicationFiled: March 11, 2020Publication date: September 17, 2020Inventors: Yuichiro WAGATSUMA, Toyohiro KAMADA, Shinichi IKE, Shuji AZUMO
-
Publication number: 20200063262Abstract: A method for forming a SiC film on a target substrate by ALD, comprises: activating a surface of the target substrate by activation gas plasma which is plasmatized an activation gas; and forming a SiC film by supplying a source gas containing a precursor represented by a chemical formula RSiX13 or RSiHClX2 onto the target substrate whose the surface is activated by activating the surface of the target substrate, where, R is an organic group having an unsaturated bond, X1 is selected from a group consisting of H, F, Cl, Br and I, and X2 is one selected from a group consisting of Cl, Br and I.Type: ApplicationFiled: November 16, 2017Publication date: February 27, 2020Inventors: Taiki KATOU, Shuji AZUMO, Yusaku KASHIWAGI
-
Publication number: 20200006057Abstract: There is provided a method for forming a target film on a substrate comprising: preparing the substrate having a first substrate region and a second substrate region that has at least two types of surfaces formed of materials different from a material of the first substrate region; selectively forming, on the surfaces of the second substrate region, an intermediate film capable of adsorbing a first self-assembled monolayer that inhibits formation of the target film on the second substrate region; selectively adsorbing the first self-assembled monolayer on a surface of the intermediate film; and selectively forming the target film on a surface of the first substrate region.Type: ApplicationFiled: June 26, 2019Publication date: January 2, 2020Inventor: Shuji AZUMO
-
Patent number: 10490443Abstract: A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO2, Pt, Pd, CuO, and CuO2, using an Ru(EtCp)2 gas and an O2 gas; and selectively forming a first SiO2-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiO2 film only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.Type: GrantFiled: September 27, 2018Date of Patent: November 26, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Yumiko Kawano, Shuji Azumo, Hiroki Murakami, Michitaka Aita, Tadahiro Ishizaka, Koji Akiyama, Yusaku Kashiwagi, Hajime Nakabayashi
-
Publication number: 20190355828Abstract: A semiconductor device has an MIS structure that includes a semiconductor layer, a gate insulating film on the semiconductor layer, and a gate electrode on the gate insulating film. The gate insulating film has a layered structure that includes a base SiO2 layer and a high-k layer on the base SiO2 layer and containing Hf. The gate electrode has a portion made of a metal material having a work function of higher than 4.6 eV, the portion being in contact with at least the high-k layer.Type: ApplicationFiled: July 13, 2017Publication date: November 21, 2019Applicant: ROHM CO., LTD.Inventors: Kenji YAMAMOTO, Masatoshi AKETA, Hirokazu ASAHARA, Takashi NAKAMURA, Takuji HOSOI, Heiji WATANABE, Takayoshi SHIMURA, Shuji AZUMO, Yusaku KASHIWAGI
-
Publication number: 20190096750Abstract: A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO2, Pt, Pd, CuO, and CuO2, using an Ru(EtCp)2 gas and an O2 gas; and selectively forming a first SiO2-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiO2 film only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.Type: ApplicationFiled: September 27, 2018Publication date: March 28, 2019Inventors: Yumiko KAWANO, Shuji AZUMO, Hiroki MURAKAMI, Michitaka AITA, Tadahiro ISHIZAKA, Koji AKIYAMA, Yusaku KASHIWAGI, Hajime NAKABAYASHI
-
Publication number: 20180076030Abstract: There is provided a SiC film forming method for forming a SiC film on a workpiece, including: a first step of forming a carbon film on the workpiece; and a second step of exposing the carbon film to a silicon-containing gas and causing silicon to be combined into the carbon film.Type: ApplicationFiled: September 6, 2017Publication date: March 15, 2018Inventors: Kazuki YAMADA, Masatoshi YAMATO, Ryota IFUKU, Shuji AZUMO, Takashi FUSE
-
Patent number: 9293543Abstract: Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.Type: GrantFiled: October 2, 2013Date of Patent: March 22, 2016Assignees: TOKYO ELECTRON LIMITED, OSAKA UNIVERSITYInventors: Shuji Azumo, Yusaku Kashiwagi, Yuichiro Morozumi, Yu Wamura, Katsushige Harada, Kosuke Takahashi, Heiji Watanabe, Takayoshi Shimura, Takuji Hosoi
-
Publication number: 20150235842Abstract: A method for manufacturing a transistor includes irradiating an oxygen gas cluster ion beam onto a surface layer of a substrate which is made of silicon carbide and includes a channel area to become a channel to form a thin interface oxide film.Type: ApplicationFiled: February 13, 2015Publication date: August 20, 2015Inventors: Kenichi HARA, Shuji AZUMO
-
Patent number: 8999102Abstract: In a method for forming a stacked substrate of a MOS (Metal Oxide Semiconductor) structure including an oxide film serving as a gate insulating film formed on a semiconductor material layer having a film or substrate shape; and a conductive film serving as a gate electrode formed on the oxide film, a polysilane film on the semiconductor material layer is formed by coating a polysilane solution on a surface of a substrate to which the semiconductor material layer is exposed. A film containing metal ions is formed on the polysilane film by coating a metal salt solution thereon, and the polysilane film and the film containing metal ions are respectively modified into a polysiloxane film and a film containing fine metal particles to form the stacked substrate.Type: GrantFiled: June 17, 2014Date of Patent: April 7, 2015Assignee: Tokyo Electron LimitedInventors: Hidenori Miyoshi, Shuji Azumo
-
Patent number: 8900991Abstract: In a film forming method for forming a Co film on a substrate provided in a processing chamber, gaseous Co4(CO)12 as a single film forming material is supplied into the processing chamber. Then, the gaseous Co4(CO)12 is thermally decomposed on the substrate to form the Co film on the substrate.Type: GrantFiled: February 22, 2012Date of Patent: December 2, 2014Assignee: Tokyo Electron LimitedInventors: Shuji Azumo, Yasuhiko Kojima
-
Publication number: 20140290857Abstract: In a method for forming a stacked substrate of a MOS (Metal Oxide Semiconductor) structure including an oxide film serving as a gate insulating film formed on a semiconductor material layer having a film or substrate shape; and a conductive film serving as a gate electrode formed on the oxide film, a polysilane film on the semiconductor material layer is formed by coating a polysilane solution on a surface of a substrate to which the semiconductor material layer is exposed. A film containing metal ions is formed on the polysilane film by coating a metal salt solution thereon, and the polysilane film and the film containing metal ions are respectively modified into a polysiloxane film and a film containing fine metal particles to form the stacked substrate.Type: ApplicationFiled: June 17, 2014Publication date: October 2, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Hidenori MIYOSHI, Shuji AZUMO
-
Patent number: 8785311Abstract: In a method for forming a stacked substrate of a MOS (Metal Oxide Semiconductor) structure including an oxide film serving as a gate insulating film formed on a semiconductor material layer having a film or substrate shape; and a conductive film serving as a gate electrode formed on the oxide film, a polysilane film on the semiconductor material layer is formed by coating a polysilane solution on a surface of a substrate to which the semiconductor material layer is exposed. A film containing metal ions is formed on the polysilane film by coating a metal salt solution thereon, and the polysilane film and the film containing metal ions are respectively modified into a polysiloxane film and a film containing fine metal particles to form the stacked substrate.Type: GrantFiled: September 8, 2011Date of Patent: July 22, 2014Assignee: Tokyo Electron LimitedInventors: Hidenori Miyoshi, Shuji Azumo
-
Publication number: 20140094027Abstract: Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.Type: ApplicationFiled: October 2, 2013Publication date: April 3, 2014Applicants: OSAKA UNIVERSITY, TOKYO ELECTRON LIMITEDInventors: Shuji AZUMO, Yusaku KASHIWAGI, Yuichiro MOROZUMI, Yu WAMURA, Katsushige HARADA, Kosuke TAKAHASHI, Heiji WATANABE, Takayoshi SHIMURA, Takuji HOSOI
-
Publication number: 20120220121Abstract: In a film forming method for forming a Co film on a substrate provided in a processing chamber, gaseous Co4(CO)12 as a single film forming material is supplied into the processing chamber. Then, the gaseous Co4(CO)12 is thermally decomposed on the substrate to form the Co film on the substrate.Type: ApplicationFiled: February 22, 2012Publication date: August 30, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Shuji AZUMO, Yasuhiko Kojima
-
Publication number: 20120211890Abstract: A metal thin film forming method includes depositing a Ti film on an insulating film formed on a substrate and depositing a Co film on the Ti film. The film forming method further includes modifying a laminated film of the Ti film and the Co film on the insulating film to a metal thin film containing Co3Ti alloy by heating the laminated film in an inert gas atmosphere or a reduction gas atmosphere.Type: ApplicationFiled: February 2, 2012Publication date: August 23, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Shuji AZUMO, Yasuhiko KOJIMA
-
Publication number: 20120171365Abstract: The film forming apparatus includes a chamber 1; a heater 5 for heating a wafer W within the chamber 1; a film forming source vessel 31, provided outside the chamber 1, for accommodating cobalt carbonyl as a film forming source; a line 43 for transporting gaseous cobalt carbonyl from the film forming source vessel 31 to the chamber 1; an exhaust device 23 for depressurizing and exhausting an inside of the chamber 1; a cobalt carbonyl supply unit 38 for supplying the gaseous cobalt carbonyl from the film forming source vessel 31 to the chamber 1 via the line 43; a temperature controller 60 for controlling temperatures of the film forming source vessel 31 and the line 43 to be below a decomposition starting temperature of the cobalt carbonyl; and a CO gas supply unit 37 for supplying a CO gas into the film forming source vessel 31.Type: ApplicationFiled: August 27, 2010Publication date: July 5, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Shuji Azumo, Yasuhiko Kojima