Patents by Inventor Shuji Hayase

Shuji Hayase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6002522
    Abstract: An optical functional element including two diffraction gratings having metal films formed on their surfaces, which are arranged to oppose each other to form a photonic band, and an optical functional film interposed between these diffraction gratings, the optical functional film consisting of a polymer containing an optical functional material, such as a nonlinear optical material and electro-optic material, dispersed in the polymer.
    Type: Grant
    Filed: June 10, 1997
    Date of Patent: December 14, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kenji Todori, Toshiro Hiraoka, Shuji Hayase
  • Patent number: 5994007
    Abstract: Disclosed is a pattern forming method, comprising the steps of providing a resist film, applying a light exposure to the resist film, with a film directly above the resist film and another film directly below the resist film being made insulative, applying a charged beam exposure to the resist film, with the film directly above the resist film and the other film directly below the resist film being made conductive, and developing the resist film to form a resist pattern.
    Type: Grant
    Filed: December 17, 1998
    Date of Patent: November 30, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasuhiko Sato, Atsushi Ando, Yasunobu Onishi, Yoshihiko Nakano, Shuji Hayase, Rikako Kani
  • Patent number: 5985513
    Abstract: The present invention relates to a photosensitive composition comprising a polysilane having a repeating unit represented by the following general formula (1) and a benzophenone type compound having an organic peroxide, ##STR1## wherein Ar represents a substituted or unsubstituted aryl group.
    Type: Grant
    Filed: May 29, 1997
    Date of Patent: November 16, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Rikako Kani, Yoshihiko Nakano, Shuji Hayase
  • Patent number: 5969059
    Abstract: An impregnation resin composition comprising an alicyclic epoxy compound, an acid anhydride, an aluminum compound having an organic group, and butylglycidyl ether, wherein the alicyclic epoxy compound contains not more than 30 ppm in concentration of Na ion component.
    Type: Grant
    Filed: March 13, 1998
    Date of Patent: October 19, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shinji Murai, Shuji Hayase
  • Patent number: 5937267
    Abstract: The present invention is to clear the difficulty in determining the progress of the decomposition reaction of PCBs carried out by a conventional device for decomposing PCBs, and to provide a system for treating PCBs to render them harmless, capable of continuously determining the progress of the decomposition reaction of PCBs at real time by using a predetermined amount of a reaction solution taken out while the decomposition reaction of the PCBs is proceeding.
    Type: Grant
    Filed: July 1, 1997
    Date of Patent: August 10, 1999
    Assignee: Kabushiki Kasiha Toshiba
    Inventors: Kenji Todori, Shuji Hayase, Katsushi Nishizawa, Nobutada Aoki, Hideki Shimada, Naoki Tajima, Kazuo Unoki
  • Patent number: 5907008
    Abstract: A black coloring composition comprising, a black inorganic pigment formed of an oxide having an average particle diameter of 0.5 .mu.m or less and comprising at least one kind of metal s elected from metals belonging to Groups 4 to 11 and also to the fourth period, at least one kinds of dispersant selected from the group consisting of polyvinyl butyral resin represented by the following general formula (1), polyacrylic resin represented by the following general formula (2), and a higher carboxylic acid represented by the following general formula (3), and an organic solvent: ##STR1## wherein x=0.01 to 0.9, y.ltoreq.0.05, and n is an integer; ##STR2## wherein R.sup.1 is selected from hydrogen atom, a substituted or unsubstituted aliphatic hydrocarbon group and a substituted or unsubstituted aromatic hydrocarbon group, R.sup.2 is selected from a substituted or unsubstituted aliphatic hydrocarbon group and a substituted or unsubstituted aromatic hydrocarbon group, R.sup.
    Type: Grant
    Filed: March 17, 1997
    Date of Patent: May 25, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshihiko Nakano, Shuji Hayase, Sawako Fujioka, Takeo Ito, Satoshi Mikoshiba, Hideo Hirayama
  • Patent number: 5866471
    Abstract: A silicon thin film is formed by coating on a substrate a solution of polysilane represented by the general formula --(SiR.sup.1.sub.2).sub.n --, where R.sup.1 substituents are selected from the group consisting of hydrogen, an alkyl group having two or more carbon atoms and a .beta.-hydrogen, a phenyl group and a silyl group, and thermally decomposing the polysilane to deposit silicon.
    Type: Grant
    Filed: December 26, 1996
    Date of Patent: February 2, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tatsuro Beppu, Shuji Hayase, Atsushi Kamata, Kenji Sano, Toshiro Hiraoka
  • Patent number: 5773192
    Abstract: Disclosed are an organic silicon compound having a repeating unit represented by general formula (I) shown below, a resist, a thermal polymerization composition and a photopolymerization composition containing the organic silicon compound, ##STR1## wherein R.sup.1 is a t-butyl group or a pyranyl group, R.sup.2 is an hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms, a substituted or unsubstituted aryl group having 1 to 24 carbon atoms, or a substituted or unsubstituted aralkyl having 7 to 24 carbon atoms, R.sup.3 is a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms, a substituted or unsubstituted aryl group having 6 to 24 carbon atoms, a substituted or unsubstituted aralkyl group having 7 to 24 carbon atoms or an alkoxyl group, and k represents an integer from 0 to 4.
    Type: Grant
    Filed: February 3, 1997
    Date of Patent: June 30, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shinji Murai, Yoshihiko Nakano, Ken Uchida, Shuji Hayase
  • Patent number: 5624788
    Abstract: Disclosed are an organic silicon compound having a repeating unit represented by general formula (I) shown below, a resist, a thermal polymerization composition and a photopolymerization composition containing the organic silicon compound, ##STR1## wherein R.sup.1 is a t-butyl group or a tetrahydropyranyl group, R.sup.2 is an hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms, a substituted or unsubstituted aryl group having 1 to 24 carbon atoms, or a substituted or unsubstituted aralkyl having 7 to 24 carbon atoms, R.sup.3 is a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms, a substituted or unsubstituted aryl group having 6 to 24 carbon atoms, a substituted or unsubstituted aralkyl group having 7 to 24 carbon atoms or an alkoxyl group, and k represents an integer from 0 to 4.
    Type: Grant
    Filed: June 15, 1995
    Date of Patent: April 29, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shinji Murai, Yoshihiko Nakano, Ken Uchida, Shuji Hayase
  • Patent number: 5372908
    Abstract: A photosensitive composition comprises a polysilane having a repeating unit represented by formula (1) and a compound which generates an acid upon exposure to light: ##STR1## wherein each of R.sup.1 and R.sup.2 independently represents a hydrogen atom, a substituted or nonsubstituted alkyl group having 1 to 18 carbon atoms, a substituted or nonsubstituted aryl group having 6 to 18 carbon atoms, or a substituted or nonsubstituted aralkyl group having 7 to 22 carbon atoms. This photosensitive composition exhibits a high-sensitivity, and can be formed into a polysilane film pattern having a high-resolution, when it is subjected to exposure to Deep UV light, an EB, an X-ray, or the like, hard baking, and development under appropriate conditions. When an aromatic ring substituted by a hydroxyl group, a substituted or nonsubstituted alkoxyl group, or a substituted or nonsubstituted siloxyl group is introduced in one of side chains R.sup.1 and R.sup.
    Type: Grant
    Filed: July 8, 1992
    Date of Patent: December 13, 1994
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shuji Hayase, Yoshihiko Nakano, Yukihiro Mikogami
  • Patent number: 5362559
    Abstract: Disclosed are a polysilane monomolecular film and a polysilane built-up film formed by building up a plurality of said monomolecular films, said monomolecular film consisting of a polysilane having a repeating unit represented by general formula (1) given below: ##STR1## where, R.sup.1 represents a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms or a substituted or unsubstituted aryl group having 6 to 24 carbon atoms, R.sup.2 represents a divalent hydrocarbon group having 1 to 4 carbon atoms which can be substituted, and X represents hydroxyl group, amino group, carboxyl group, or a hydrophilic group having at least one selected from the group consisting of hydroxyl group, amino group, carboxyl group, amide linkage, ester linkage, carbamate linkage and carbonate linkage. The polysilane monomolecular film and built-up film can be formed on a substrate by an LB technique.
    Type: Grant
    Filed: July 12, 1993
    Date of Patent: November 8, 1994
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shuji Hayase, Yoshihiko Nakano, Yukihiro Mikogami, Akira Yoshizumi, Shinji Murai, Rikako Kani
  • Patent number: 5198520
    Abstract: The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrobenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.
    Type: Grant
    Filed: March 21, 1991
    Date of Patent: March 30, 1993
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasunobu Onishi, Shuji Hayase, Rumiko Horiguchi, Akiko Hirao
  • Patent number: 5017453
    Abstract: The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrogenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.
    Type: Grant
    Filed: January 31, 1989
    Date of Patent: May 21, 1991
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasunobu Onishi, Shuji Hayase, Rumiko Horiguchi, Akiko Hirao
  • Patent number: 4988601
    Abstract: A photosensitive resin composition having high heat resistance, sensitivity, and resolution performance, including a novolak resin prepared by condensing 2,5-xylenol with m-cresol and/or p-cresol using a carbonyl compound, a novolak resin prepared by condensing 3,5-xylenol with m-cresol and/or p-cresol, and a photosensitive reagent. In addition, four other types of photosensitive resin compositions are disclosed.
    Type: Grant
    Filed: November 25, 1988
    Date of Patent: January 29, 1991
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toru Ushirogouchi, Shuji Hayase, Yasunobu Onishi, Rumiko Horiguchi
  • Patent number: 4822716
    Abstract: The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrobenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.
    Type: Grant
    Filed: December 8, 1986
    Date of Patent: April 18, 1989
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasunobu Onishi, Shuji Hayase, Rumiko Horiguchi, Akiko Hirao