Abstract: The invention discloses a method for cutting a substrate wafer from an indium phosphide crystal, and belongs to the field of semiconductor substrate preparation, comprises the following steps of: 1) orientating, cutting the head and the tail of a crystal bar, adjusting the orientation and trying to cut the crystal bar until a wafer with a required crystal orientation cut, wherein the cutting end face is an orientation end face; 2) multi-wire cutting, on a multi-wire cutting apparatus, dividing a crystal bar parallel to an orientation end face into wafers; 3) cleaning, cleaning the wafer until no residue and no dirt existing on the surface; 4) circle cutting, performing circle cutting on the wafer to cut the desired crystal orientation area.

Abstract: The utility model discloses a block gravity hammer that makes a small ball slide against gravity by triggering a swing, including a base, a swinging component, and a gravity ball. The base is connected to the block slide and has a slot that connects to the block slide. The swinging component can be set in the slot for back-and-forth swinging and has first and second swinging arms that are spread apart and symmetrically arranged. This product can be docked with a block slide, allowing the small ball to travel against gravity, thereby changing the path of the small ball and enhancing the versatility of the product's gameplay. Install one or more of these products in the block slide. When the small ball falls due to its own gravity inertia and touches the barrier, the gravity ball rotates 180 degrees, using the gravity ball to transport the small ball against gravity to a different location.

Abstract: The invention discloses a device and a method for continuous VGF crystal growth through reverse injection synthesis, relating to a device for preparing a semiconductor crystal and growing a single crystal, in particular to a method and a device for continuously growing the crystal in situ by using a VGF method and reverse injection synthesis. The device includes a furnace body, a crucible, a heat preservation system, a heating system, a temperature control system and a gas pressure regulation system, wherein the crucible is arranged in the furnace body, has a synthesis unit at its upper part, and has a crystal growth unit and a seed crystal unit at its lower part, and the synthesis unit is communicated with the crystal growth unit through capillary pores.

Abstract: Provided are a sterilization device, an air filter, and a filtration system, which relate to the technical filed of sterilization equipment. The sterilization device includes an ultraviolet (UV) lamp module, two cover plates arranged opposite each other, and two reflecting layers, where a flow chamber which allows the air to flow therein is formed between the two cover plates, and each of the two cover plates is provided with at least one air vent communicated with the flow chamber; wherein two opposite surfaces of the two cover plates respectively have the two reflecting layers disposed thereon, and at least one of the two reflecting layers is a diffuse reflection layer; and the UV lamp module is disposed on the cover plate and is used to emit UV light into the flow chamber.

Abstract: Device and method for immersed synthesis and continuous growth of phosphides under a magnetic field are disclosed in the field of semiconductor material preparation. In particular, device and method for synthesizing and growing semiconductor phosphides by means of immersing phosphorus into a metal melt under the action of a static magnetic field are disclosed. The device includes a furnace body, an injection synthesis system and a static magnetic field generator. The method includes A, heating the crucible to melt the metal and a covering material boron oxide in the crucible; B, immersing red phosphorus into the crucible; C, applying a static magnetic field surrounding the crucible, and adjusting the temperature gradient to start the synthesis; and D, performing crystal growth after completion of the synthesis.

Abstract: The present invention relates to a process for synthesizing indium phosphide by liquid phosphorus injection method, which belongs to the field of semiconductor technology. The method comprises: converting gaseous phosphorus into liquid phosphorus through a condenser, injecting the liquid phosphorus into an indium melt while preventing phosphorus vaporization by randomly delivering a low temperature inert gas, and causing an instantaneous reaction between the liquid phosphorus and the liquid indium melt, so that an indium phosphide melt can be synthesized at a relatively low temperature, with advantages of high efficiency, high purity, precise proportioning, large capacity, aiding in the growth of a phosphorus-rich indium phosphide polycrystal and facilitating the growth of an indium phosphide monocrystal. The method includes the steps of indium cleaning, phosphorus charging, furnace loading, communication of condenser, synthesis, preparation of crystals, etc.

Abstract: Disclosed is an apparatus for preparing a large-size single crystal, which relates to the field of semiconductor material preparation, and more particularly, to an apparatus for preparing a large-size single crystal from a plurality of small-size single crystals by connecting them in solid states. The apparatus includes a hydrocooling furnace, a solid connection chamber hermetically disposed in the hydrocooling furnace, and combined fixtures provided in the solid connection chamber, wherein a plurality of crystal pieces are fixed by the combined fixtures, a top column or a stress block is used for pressing the crystal piece through the combined fixtures, a heating wire surrounding the solid connection chamber is provided in the hydrocooling furnace, a vacuum tube is communicated with the solid connection chamber, and a thermocouple is disposed close to the combined fixtures.

Abstract: A purification apparatus and purification method of a non-metallic semiconductor material relate to the field of preparation of high-purity materials, and are especially applicable to preparation of high-purity non-metal materials, in particular to an apparatus and method for purifying a non-metallic semiconductor material by means of a metal melt. The apparatus includes a furnace body, a pressure balance valve, a crucible disposed in the middle of the lower part of the furnace body, a heating and supporting structure for the crucible, a liftable injection mechanism disposed right above the crucible, and a liftable and rotatable recovery mechanism disposed next to the liftable injection mechanism. The method is completed based on the purification apparatus, and includes: injecting the gasified non-metal material into the metal melt under a high pressure environment; reducing the ambient pressure, and collecting the bubbles volatilized from the metal melt to obtain the purified non-metal material.

Abstract: A system and method for growing a large-size compound semiconductor single crystal belong to the field of single crystal preparation, in particular to a system and method for preparing a large-size, especially ultra-long compound semiconductor single crystal. The large-size single crystal growth system includes a crystal growth space control device and a raw material injection device within a furnace body. The raw materials are injected in the raw material synthesis and crystal growth processes, and the growth space is adjusted according to the length of the single crystal. Due to the existence of multiple times of necking treatment, it can reduce the thermal stress of the crystal itself, to prevent breakage as the crystal grows too long, while substantially reducing the generation of defects and the extension of the original defects during the multiple growth processes; and such structure can be free from the limitation of the size of high-pressure preparation apparatuses.

Abstract: The present invention discloses a method for preparing a compound semiconductor crystal by continuous LEC and VGF combination after injection synthesis, including: step A, vacuuming a system for preparing compounds and filling the system with an inert gas; step B, heating to melt the metallic raw material and boron oxide I in a synthesis crucible; step C, heating to melt boron oxide II, and moving the synthesis injection system downwards to move the end of the injection synthesis tube until the metallic raw material in the crucible is synthesized into a first melt; step D, slowly reducing the pressure inside the VGF crucible so that the first melt enters the VGF crucible to form a second melt; etc. In the present invention, the upper part is a VGF growth part and the lower part is a synthesis part; the synthesis part entering the VGF growth part by reverse sucking, while the VGF growth part is configured with a seed crystal rod and an observation system, and also can be subjected to gas control.

Abstract: A preparation device and method of semi-insulated indium phosphide belong to the field of crystal preparation. The preparation device includes a furnace body, and a crucible, an injector and an in-situ annealing device within the furnace body. The method includes: A, heating indium to form an indium melt; B, filling the furnace body with hydrogen of 0.02-0.3 MPa and holding the pressure for 1-5 hours, and covering the surface of the melt with liquid boron oxide; C, filling the furnace body with an inert gas of 6-15 MPa; D, injecting a phosphorus gas into the indium melt by the injector; E, growing a crystal; and F, annealing the crystal within the in-situ annealing device.

Abstract: Provided are a sterilization module and an air purifier, which are applied in the field of air sterilization. The sterilization module is applied in the air purifier. The sterilization module includes a frame, a plurality of wave-shaped plates, and at least one sterilizing lamp. The frame is provided with a channel running through the frame from one end to another end. The plurality of wave-shaped plates are arranged at intervals in the channel, where each of the plurality of wave-shaped plates is bent alternately from the one end to the another end of the frame, so as to form an air duct that is wave-shaped between two adjacent wave-shaped plates. The at least one sterilizing lamp is disposed on the wave-shaped plate and used to emit ultraviolet (UV) light towards the air duct.

Abstract: An ultraviolet sterilization lamp structure relates to the technical field of disinfection and sterilization, comprising: a lamp board; an ultraviolet lamp connected to the lamp board, a light source convex lens arranged on a positive side of the ultraviolet lamp, and a strip-shaped convex lens laterally arranged on an outer side of the light source convex lens. With the above technical solution, the ultraviolet light is optically zoomed twice through the light source convex lens and the strip-shaped convex lens to achieve an effect of vertical concentration and horizontal diffusion, ensuring that the horizontal angle of the irradiation is large and the vertical angle is small, avoiding the exposure to the personnel activity area, so that the personnel do not have to leave the room when sterilizing, thereby embodying the coexistence of man and machine and improving the immediacy and practicality of ultraviolet air sterilizing.

Abstract: Provided is a vital stain inspection method for distinguishing between cancer cells and normal cells within a lumen, or on the serous membrane side of an organ, by means of laser irradiation after organ tissue has been stained by curcumin, Red #3 or Red #106, which are edible color dyes.

Abstract: A polishing device for an indium phosphide substrate and a polishing process are provided, which belong to the technical field of polishing of indium phosphide.

Abstract: A cancer test device (1) is provided with: an application unit (40) for applying a staining agent (45), which can selectively stain a product of a cancer-relating gene in a living cell a chromatic color, onto a group of living cells; an imaging unit (10) for imaging the group of living cells having the staining agent (45) applied thereto; and a determination unit (52) for determining the level of malignancy of cancerization of the group of living cells on the basis of the state of the stained expression pattern of the cancer-relating gene in the group of living cells in an image obtained by the aforementioned imaging.

Abstract: The present application provides a trisection power divider with isolation and a microwave transmission system, where the divider includes a first hybrid ring coupler with a distribution ratio of 1:2 and a second hybrid ring coupler with a distribution ratio of 1:1; a first port of the first hybrid ring coupler is a signal input port; a second port of the first hybrid ring coupler is connected with a first port of the second hybrid ring coupler; a second port of the second hybrid ring coupler, a third port of the second hybrid ring coupler and a third port of the first hybrid ring coupler are three signal output ports of the divider; and the second port of the first hybrid ring coupler is a port with high power.