Abstract: The present application provides a trisection power divider with isolation and a microwave transmission system, where the divider includes a first hybrid ring coupler with a distribution ratio of 1:2 and a second hybrid ring coupler with a distribution ratio of 1:1; a first port of the first hybrid ring coupler is a signal input port; a second port of the first hybrid ring coupler is connected with a first port of the second hybrid ring coupler; a second port of the second hybrid ring coupler, a third port of the second hybrid ring coupler and a third port of the first hybrid ring coupler are three signal output ports of the divider; and the second port of the first hybrid ring coupler is a port with high power.

Abstract: The invention discloses a method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, belongs to the technical field of semiconductors, and comprises the steps of preparing an indium-phosphorus mixed ball, charging, maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball, melting a covering agent, feeding, synthesizing and crystal growing, which is synthesized by directly melting the proportioned indium-phosphorus mixed ball. Indium powder and phosphorus powder are uniformly mixed and pressed into spherical indium-phosphorus mixed particles, then the mixture of the indium-phosphorus mixed balls and the boron oxide powder is fed into a melt with a boron oxide covering agent, and crystal growth in situ is performed after synthesis.

Abstract: Provided are a sterilization module and an air purifier, which are applied in the field of air sterilization. The sterilization module is applied in the air purifier. The sterilization module includes a frame, a plurality of wave-shaped plates, and at least one sterilizing lamp. The frame is provided with a channel running through the frame from one end to another end. The plurality of wave-shaped plates are arranged at intervals in the channel, where each of the plurality of wave-shaped plates is bent alternately from the one end to the another end of the frame, so as to form an air duct that is wave-shaped between two adjacent wave-shaped plates. The at least one sterilizing lamp is disposed on the wave-shaped plate and used to emit ultraviolet (UV) light towards the air duct.

Abstract: A multi-channel constant current circuit and a lighting device are provided. The multi-channel constant current circuit is used to drive UVC LED to emit light, and includes a constant voltage circuit and a first number of linear constant current diodes. The constant voltage circuit includes a power input terminal, a power output terminal and a voltage regulation sub-circuit. The power input terminal is connected to the power output terminal through the voltage regulation sub-circuit, each of the linear constant current diodes is connected to the power output terminal, the linear constant current diode is used to connect a second number of UVC LEDs and keeps a working current of each UVC LED, and the voltage regulation sub-circuit is used for a constant output voltage.

Abstract: Provided are a sterilization device, an air filter, and a filtration system, which relate to the technical filed of sterilization equipment. The sterilization device includes an ultraviolet (UV) lamp module, two cover plates arranged opposite each other, and two reflecting layers, where a flow chamber which allows the air to flow therein is formed between the two cover plates, and each of the two cover plates is provided with at least one air vent communicated with the flow chamber; wherein two opposite surfaces of the two cover plates respectively have the two reflecting layers disposed thereon, and at least one of the two reflecting layers is a diffuse reflection layer; and the UV lamp module is disposed on the cover plate and is used to emit UV light into the flow chamber.

Abstract: A growth device and method for low-stress crystals are provided, which relate to the field of preparation of crystals, in particular to a device and method for preparing low-stress and low-defect crystals by using a pulling method. The growth device includes a furnace body; a crucible and a heating and insulation system which are arranged at a bottom of the furnace body; a crystal pulling mechanism, and a quartz observation window; the device further includes a liftable heating mantle mechanism including a heating mantle body, a heating mantle supporting component, a heating wire arranged around the heating mantle body, and a heating mantle lifting mechanism. The method includes: after crystals are pulled out of a melt, covering the crystals with a liftable heating mantle mechanism.

Abstract: The present invention relates to a process for synthesizing indium phosphide by liquid phosphorus injection method, which belongs to the field of semiconductor technology. The method comprises: converting gaseous phosphorus into liquid phosphorus through a condenser, injecting the liquid phosphorus into an indium melt while preventing phosphorus vaporization by randomly delivering a low temperature inert gas, and causing an instantaneous reaction between the liquid phosphorus and the liquid indium melt, so that an indium phosphide melt can be synthesized at a relatively low temperature, with advantages of high efficiency, high purity, precise proportioning, large capacity, aiding in the growth of a phosphorus-rich indium phosphide polycrystal and facilitating the growth of an indium phosphide monocrystal. The method includes the steps of indium cleaning, phosphorus charging, furnace loading, communication of condenser, synthesis, preparation of crystals, etc.

Abstract: A semiconductor phosphide injection synthesis system and a control method are provided, which belong to the technical field of preparation of semiconductor phosphides. The semiconductor phosphide injection synthesis system includes a furnace body, a shielding carrier box arranged above the furnace body by virtue of a lifting mechanism, a phosphorus source carrier arranged in the shielding carrier box, an injection pipe arranged below the phosphorus source carrier, and a crucible arranged at an inner bottom of the furnace body in a matched manner.

Abstract: A rocking type seed crystal surface corrosion, cleaning and drying device and a process method belong to the technical field of semiconductor crystal growth, comprising a corrosion tank and a matched corrosion tank cover, a seed crystal support platform arranged at a middle position of the bottom of the corrosion tank, and a high-purity hot nitrogen introduction short straight pipe, an corrosive liquid introduction short straight pipe, a deionized water introduction short straight pipe and an overflow liquid discharge short straight pipe matched with and arranged at both sides of the corrosion tank, wherein free ends of the high-purity hot nitrogen introduction short straight pipe, the corrosive liquid introduction short straight pipe and the deionized water introduction short straight pipe are all provided with switch stop valves; the device further comprises a rocking mechanism provided at the bottom of the corrosion tank; and the seed crystal support platform comprises a support frame symmetrically distrib

Abstract: A cancer test device (1) is provided with: an application unit (40) for applying a staining agent (45), which can selectively stain a product of a cancer-relating gene in a living cell a chromatic color, onto a group of living cells; an imaging unit (10) for imaging the group of living cells having the staining agent (45) applied thereto; and a determination unit (52) for determining the level of malignancy of cancerization of the group of living cells on the basis of the state of the stained expression pattern of the cancer-relating gene in the group of living cells in an image obtained by the aforementioned imaging.

Abstract: A cancer test device (1) is provided with: an application unit (40) for applying a staining agent (45), which can selectively stain a product of a cancer-relating gene in a living cell a chromatic color, onto a group of living cells; an imaging unit (10) for imaging the group of living cells having the staining agent (45) applied thereto; and a determination unit (52) for determining the level of malignancy of cancerization of the group of living cells on the basis of the state of the stained expression pattern of the cancer-relating gene in the group of living cells in an image obtained by the aforementioned imaging.

Abstract: A flocculating, grading, and dewatering device includes a tank body, a mixing zone, a flocculent settling zone, a centrifugal dewatering zone, and a particle screening zone. An initial material is mixed with a chemical agent for a flocculation reaction, a lower sediment material settles and an upper liquid overflows. In the centrifugal dewatering zone, a screen basket is allowed to rotate to facilitate a centrifugal movement of the sediment material, water in the sediment material moves into a guide cavity and then flows to a centrifugate outlet, and then a dewatered material in the screen basket is removed out of the screen basket. In the particle screening zone, a screening mechanism screens particles of different size grades in the dewatered material, and water generated flows downward and is discharged; liquids discharged from the centrifugate outlet and the overflow port are combined, and then discharged through a mixed liquid outlet.

Abstract: A non-blinking quantum dot (NBQD) is provided. In a light-emitting diode (LED) prepared with the NBQD, the maximum red brightness is greater than 180,000 cd/m2, the green brightness is greater than 200,000 cd/m2, and the blue brightness is greater than 100,000,000 cd/m2. The red current efficiency is 15-40 cd/A, the green current efficiency is 90-150 cd/A, and the blue current efficiency is 1-20 cd/A. The red external quantum efficiency is 18-30%, the green external quantum efficiency is 18-30%, and the blue external quantum efficiency is 6-22%. When the current efficiency or external quantum efficiency is the highest, the red, green and blue brightness of the LED is 70,000-100,000 cd/m2, 70,000-200,000 cd/m2 and 3,000-40,000 cd/m2, respectively.

Abstract: Provided is a method for detecting a lesion characterized by administering to an organ a cell staining agent that enables observation of biological tissue by laser irradiation, and then irradiating the organ with multiphoton laser or confocal laser to image the inside of lesion in the organ, and determining the interface between normal site and lesion site.

Abstract: A vital stain for observation under multiphoton laser microscopy, the vital stain comprising one or more edible dye compounds.

Abstract: The invention discloses a method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, belongs to the technical field of semiconductors, and comprises the steps of preparing an indium-phosphorus mixed ball, charging, maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball, melting a covering agent, feeding, synthesizing and crystal growing, which is synthesized by directly melting the proportioned indium-phosphorus mixed ball. Indium powder and phosphorus powder are uniformly mixed and pressed into spherical indium-phosphorus mixed particles, then the mixture of the indium-phosphorus mixed balls and the boron oxide powder is fed into a melt with a boron oxide covering agent, and crystal growth in situ is performed after synthesis.

Abstract: Disclosed is an apparatus for preparing a large-size single crystal, which relates to the field of semiconductor material preparation, and more particularly, to an apparatus for preparing a large-size single crystal from a plurality of small-size single crystals by connecting them in solid states. The apparatus includes a hydrocooling furnace, a solid connection chamber hermetically disposed in the hydrocooling furnace, and combined fixtures provided in the solid connection chamber, wherein a plurality of crystal pieces are fixed by the combined fixtures, a top column or a stress block is used for pressing the crystal piece through the combined fixtures, a heating wire surrounding the solid connection chamber is provided in the hydrocooling furnace, a vacuum tube is communicated with the solid connection chamber, and a thermocouple is disposed close to the combined fixtures.

Abstract: The invention discloses a method for cutting a substrate wafer from an indium phosphide crystal, and belongs to the field of semiconductor substrate preparation, comprises the following steps of: 1) orientating, cutting the head and the tail of a crystal bar, adjusting the orientation and trying to cut the crystal bar until a wafer with a required crystal orientation cut, wherein the cutting end face is an orientation end face; 2) multi-wire cutting, on a multi-wire cutting apparatus, dividing a crystal bar parallel to an orientation end face into wafers; 3) cleaning, cleaning the wafer until no residue and no dirt existing on the surface; 4) circle cutting, performing circle cutting on the wafer to cut the desired crystal orientation area.

Abstract: The invention provides a growth method for preparing high-yield crystals, belongs to the technical field of single crystal growth. Auxiliary crucibles are arranged on a crucible according to different crystal types and according to the crystal orientation of crystal growth in the main crucible, the relationship between the crystal growth direction and twin crystal orientation. By controlling the angle between the auxiliary crucibles and the main crucible, the relative position between the auxiliary crucibles each other, the auxiliary crucibles realize correction on the crystal orientation of twins generated in the main crucible crystal growth process.