Abstract: A method of fabricating an optical device comprises steps of forming a silicon-based optical component in a substrate; depositing an ILD layer on the substrate and the silicon-based optical component; forming a thermal tuning assembly comprising a first metallic material in the ILD layer and above the silicon-based optical component, wherein the thermal tuning assembly comprises a core above the silicon-based optical component, a plurality of grids spaced apart from the core, and a pair of neck portions connecting the grids to the core, wherein a width of a strip in each grid is greater than a width of the core; forming at least one conductive plug comprising the first metallic material penetrating the ILD layer and coupled to the silicon-based optical component; and forming a plurality of conductive lines comprising a second metallic material coupled to the thermal tuning assembly.

Abstract: In some embodiments, a photodetector is provided. The photodetector includes a first well having a first doping type disposed in a semiconductor substrate. A second well having a second doping type opposite the first doping type is disposed in the semiconductor substrate on a side of the first well. A first doped buried region having the second doping type is disposed in the semiconductor substrate, where the first doped buried region extends laterally through the semiconductor substrate beneath the first well and the second well. A second doped buried region having the second doping type is disposed in the semiconductor substrate and vertically between the first doped buried region and the first well, where the second doped buried region contacts the first well such that a photodetector p-n junction exists along the second doped buried region and the first well.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor substrate, a first dielectric layer, a second dielectric layer, a light modulator, a heater, and a first conductive contact. The first dielectric layer is disposed on the semiconductor substrate. The second dielectric layer is disposed on the first dielectric layer. The light modulator is disposed in the first dielectric layer. The heater is disposed in the second dielectric layer and above the light modulator. The first conductive contact is electrically connected to the light modulator. A top surface of the heater is coplanar with a top surface of the first conductive contact.

Abstract: A method of fabricating an optical device comprises steps of forming a silicon-based optical component in a substrate; depositing an ILD layer on the substrate and the silicon-based optical component; forming a thermal tuning assembly comprising a first metallic material in the ILD layer and above the silicon-based optical component, wherein the thermal tuning assembly comprises a core above the silicon-based optical component, a plurality of grids spaced apart from the core, and a pair of neck portions connecting the grids to the core, wherein a width of a strip in each grid is greater than a width of the core; forming at least one conductive plug comprising the first metallic material penetrating the ILD layer and coupled to the silicon-based optical component; and forming a plurality of conductive lines comprising a second metallic material coupled to the thermal tuning assembly.

Abstract: A toilet seat and toilet chair with detachable seat members that can be easily removed from around a child's neck. The apparatus includes a first seat member and a second seat member, wherein the first and second seat members are detachable. The apparatus includes a first latch disposed at a first end of the second seat member between the first and second seat members, and a second latch disposed at the second end of the second seat member between the first and second seat members opposite the first latch. During use, a user may detach the first and second seat members via the first and second latches. The second seat member may be later reconnected to the first seat member via the first and second latches.

Abstract: A modulator heater structure may include a plurality of regions having different thicknesses. For example, a heater ring of the modulator heater structure may have a first thickness. A heater pad of the modulator heater structure, that is configured to provide an electrical current to the heater ring, may have a second thickness that is greater than the first thickness. The lesser thickness of the heater ring of the modulator heater structure provides high electrical resistance in the heater ring, which enables the heater ring to quickly and efficiently generate heat. The greater thickness of the heater pad provides low electrical resistance in the second region, which enables the electrical current to be efficiently provided through the heater pad to the heater ring with reduced heat dissipation in the hear pad due to the lower electrical current dissipation in the heater pad.

Abstract: A bubble blowing apparatus comprising a main body housing, a handle integral to a lower portion of the main body housing, a motor, a fan operably coupled to the motor, the fan being positioned to blow a stream of air outward from a front portion of the main body housing, a pump mechanism operably coupled to the motor, a bubble wand operably coupled to the motor, a trigger that is operable to activate the motor, a bubble solution container, a liquid supply tube operably coupled to the pump mechanism and configured to supply liquid from the bubble solution container to the bubble wand, and a liquid return tube configured to return excess liquid from the bubble wand to the bubble solution container. The bubble wand may further comprise a pair of independent arcuate bubble blade members.

Abstract: An optical modulator structure in a photonic integrated circuit includes an L-shaped P-N junction at an optical mode of the optical modulator structure (e.g., an area of the optical modulator structure in which light is generated). The L-shaped P-N junction provides increased area of overlap of the P-N junction at the optical mode relative to another type of junction, such as a horizontal junction or I-shaped junction. The increased area of overlap may enable the optical modulator structure to achieve a greater modulation efficiency.

Abstract: In some embodiments, the present disclosure relates to an integrated chip (IC), including a substrate, a floating gate electrode disposed over the substrate, a contact etch stop layer (CESL) structure disposed over the floating gate electrode, an insulating stack separating the floating gate electrode from the CESL structure, the insulating stack including a first resist protective layer disposed over the floating gate electrode, a second resist protective layer disposed over the first resist protective layer, and an insulating layer separating the first resist protective layer from the second resist protective layer.

Abstract: A toilet seat and toilet chair with detachable seat members that can be easily removed from around a child's neck. The apparatus includes a first seat member and a second seat member, wherein the first and second seat members are detachable. The apparatus includes a first latch disposed at a first end of the second seat member between the first and second seat members, and a second latch disposed at the second end of the second seat member between the first and second seat members opposite the first latch. During use, a user may detach the first and second seat members via the first and second latches. The second seat member may be later reconnected to the first seat member via the first and second latches.

Abstract: The present disclosure provides an optical modulating structure. The optical modulating structure includes a lower member extending along an insulating layer, a first protrusion over the lower member, and a second protrusion over the lower member and separated from the first protrusion. A first mask layer is formed over the optical modulating structure, wherein the first mask layer covers the second protrusion and a first portion of the lower member between the first protrusion and the second protrusion. A first doping region is formed in an exposed portion of the lower member and at least a portion of an exposed sidewall of the first protrusion. A dielectric layer is formed between the first protrusion and the second protrusion. A method for manufacturing the optical modulating structure is also provided.

Abstract: A semiconductor device includes a substrate having a P-well region, an N-well region disposed on either side of and abutting the P-well region, and a deep N-well region disposed beneath and abutting both the P-well region and at least part of the N-well region on either side of the P-well region. The semiconductor device further includes a first conductive layer formed over a cathode region of the P-well region, where a Schottky barrier is formed at a junction of the first conductive layer and the P-well region. The semiconductor device further includes a second conductive layer formed over anode regions of the P-well region, where the anode regions are disposed on either side of the cathode region.

Abstract: A waveguide structure and an optical modulator structure of a photonic integrated circuit are formed in a dielectric region above a substrate of a semiconductor device. Openings are then formed through the dielectric region and to the substrate so that material can be removed from the substrate to form air gaps between the substrate and the dielectric region. The openings are then sealed by depositing dielectric material in the openings. Sealing the openings reduces the likelihood of exposure of the dielectric region and other regions of the semiconductor device to exposure to environmental elements such as humidity and oxygen. The reduced likelihood of exposure to these environmental elements, due to sealing the openings, may reduce the likelihood and/or rate of formation of defects in the dielectric region and the other regions of the semiconductor device.

Abstract: A method of fabricating an optical device comprises steps of forming a silicon-based optical component in a substrate; depositing an ILD layer on the substrate and the silicon-based optical component; forming a thermal tuning assembly comprising a first metallic material in the ILD layer and above the silicon-based optical component, wherein the thermal tuning assembly comprises a core above the silicon-based optical component, a plurality of grids spaced apart from the core, and a pair of neck portions connecting the grids to the core, wherein a width of a strip in each grid is greater than a width of the core; forming at least one conductive plug comprising the first metallic material penetrating the ILD layer and coupled to the silicon-based optical component; and forming a plurality of conductive lines comprising a second metallic material coupled to the thermal tuning assembly.

Abstract: A bubble blowing apparatus comprising a main body, a plurality of legs connecting the main body to a base, a motor, a fan operably coupled to the motor to blow an upward stream of air, a liquid fountain unit operably coupled to the motor to blow a bubble solution upward, a gear shaft operably coupled to the motor to rotate about a rotational axis, and a plurality of bubble wands rigidly affixed to an upper portion of the gear shaft. Further, the gear shaft is configured to continuously rotate about the rotational axis, such that each of the plurality of bubble wands repetitively cycle between the two positions of (1) passing over the liquid fountain unit so as to amass upwardly blown bubble solution, and (2) passing over the fan such that the amassed bubble solution contacts the upwardly blown air and forms a bubble.

Abstract: A semiconductor device includes a substrate having a P-well region, an N-well region disposed on either side of and abutting the P-well region, and a deep N-well region disposed beneath and abutting both the P-well region and at least part of the N-well region on either side of the P-well region. The semiconductor device further includes a first conductive layer formed over a cathode region of the P-well region, where a Schottky barrier is formed at a junction of the first conductive layer and the P-well region. The semiconductor device further includes a second conductive layer formed over anode regions of the P-well region, where the anode regions are disposed on either side of the cathode region.

Abstract: A toilet seat and toilet chair with detachable seat members that can be easily removed from around a child's neck. The apparatus includes a first seat member and a second seat member, wherein the first and second seat members are detachable. The apparatus includes a first latch disposed at a first end of the second seat member between the first and second seat members, and a second latch disposed at the second end of the second seat member between the first and second seat members opposite the first latch. During use, a user may detach the first and second seat members via the first and second latches. The second seat member may be later reconnected to the first seat member via the first and second latches.

Abstract: A lead frame includes: a die pad having a die disposing area; a plurality of lead pads located around the die pad; an outer frame, located at a periphery of the die pad and the lead pads; and at least two tie bars, respectively connected between the outer frame and two opposite sides of the die pad. At least one of the die pad and the tie bars includes a thermal deformation mitigation structure.

Abstract: A package structure, includes: a lead frame, having a die pad and lead pads around the die pad; a chip die on the die pad, wherein the lead pads are electrically connected with the chip die via lead wires; a thermal conductive adhesive layer on the chip die; a thermal conductive plate on the thermal conductive adhesive layer; and a packaging material, encapsulating the lead frame, the chip die, the thermal conductive plate, and the thermal conductive adhesive layer. The thermal conductive plate is exposed on a top of the package material, and the lead frame is exposed on a bottom surface of the package material. The package structure has an upper thermal conduction path passing through the chip die, the thermal conductive adhesive layer, and the thermal conductive plate; and a lower thermal conduction path passing through the chip die and the lead frame.