Abstract: Described herein is a technique capable of improving a quality of a film formed on a substrate. According to the technique described herein, there is provided a method of manufacturing a semiconductor device, including: (a) exhausting an inner atmosphere of a first gas supply pipe configured to supply a first gas generated by a vaporizer to a process chamber accommodating a substrate by a first gas discharge system connected to the first gas supply pipe; (b) exhausting an inner atmosphere of the vaporizer through a second gas discharge system provided at a vaporizer outlet pipe of the vaporizer by supplying an inert gas to the vaporizer via a vaporizer inlet pipe of the vaporizer; and (c) supplying the first gas generated by the vaporizer to the process chamber accommodating the substrate via the vaporizer outlet pipe, the first gas supply pipe and a first timing valve provided at the first gas supply pipe before (a) is performed or after (b) is performed.

Abstract: Described herein is a technique capable of improving the productivity of a substrate processing system including a plurality of process chambers. According to the technique described herein, there is provided a method of manufacturing a semiconductor device, including: (a) placing a storage container accommodating substrates on a loading port shelf; (b) transferring the substrates in a predetermined order from the storage container to process chambers capable of processing the substrates; (c) perform a substrate processing in the process chambers; (d) generating first count data corresponding to the processing chambers; (e) storing the first count data; (f) assigning transfer flag data to one of the process chambers next to another of the process chambers corresponding to a maximum count number of the first count data; and (g) transferring substrates accommodated in a next storage container of the storage container in the predetermined order based on the transfer flag data.

Abstract: An image processing apparatus that causes an effect of emission of virtual light to be applied in a captured image includes an acquisition unit, a determination unit, and a correction unit. The acquisition unit is configured to acquire ambient light distribution information in the captured image. The determination unit is configured, based on the ambient light distribution information acquired by the acquisition unit, to determine a color characteristic of a virtual light source that is a light source of the virtual light. The correction unit is configured, based on the color characteristic of the virtual light source determined by the determination unit, to make a correction by which the effect of the virtual light is applied in a partial area of the captured image.

Abstract: There is provided a technique that includes (a) performing a heating process on a substrate in a process chamber, (b) transferring the substrate between the process chamber and a load lock chamber connected to a vacuum transfer chamber by a transfer robot installed in the vacuum transfer chamber connected to the process chamber, and (c) reading transfer information corresponding to process information applied to the substrate from a memory device in which plural pieces of the process information on a process content of the substrate and plural pieces of the transfer information of the transfer robot corresponding to the plural pieces of the process information are recorded, and controlling the transfer robot to transfer the substrate based on the read transfer information.

Abstract: Described herein is a technique capable of improving the productivity of a substrate processing system including a plurality of process chambers. According to the technique described herein, there is provided a method of manufacturing a semiconductor device, including: (a) placing a storage container accommodating substrates on a loading port shelf; (b) transferring the substrates in a predetermined order from the storage container to process chambers capable of processing the substrates; (c) perform a substrate processing in the process chambers; (d) generating first count data corresponding to the processing chambers; (e) storing the first count data; (f) assigning transfer flag data to one of the process chambers next to another of the process chambers corresponding to a maximum count number of the first count data; and (g) transferring substrates accommodated in a next storage container of the storage container in the predetermined order based on the transfer flag data.

Abstract: Described herein is a technique capable of improving a quality of a substrate processing. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) receiving substrate data including at least one of a stacked number of layers of a device formed on a substrate and a structure of the device; (b) setting an apparatus parameter corresponding to the substrate data; (c) supporting the substrate corresponding to the substrate data above a substrate support; (d) elevating a temperature of the substrate based on the apparatus parameter while the substrate is separated from a surface of the substrate support; (e) placing the substrate on the substrate support after (d); and (f) processing the substrate in a process chamber.

Abstract: There is provided a technique of manufacturing a semiconductor device, including: by a processing performing part, processing a substrate based on setting parameter corresponding to process recipe stored in a controller; by a first transceiver, transmitting measurement value of the processing performing part to the controller; by the controller, causing a learning part to perform machine learning process on the measurement value received from the first transceiver as learning data; by the controller, after the act of causing the learning part to perform the machine learning process, generating update data for updating the setting parameter; by the controller, causing an arithmetic part to generate update parameter for updating the setting parameter based on the update data; by the controller, causing a second transceiver to transmit the update parameter to the first transceiver; and by the updating part, updating the setting parameter based on the update parameter received from the controller.

Abstract: Described herein is a technique capable of capable of managing a substrate processing apparatus efficiently. According to one aspect of the technique described herein, there is provided a substrate processing apparatus including: a process chamber where a substrate is processed; a position information acquisition part configured to acquire position information of the process chamber; a memory device configured to store the position information; and an information controller configured to cause the position information acquired by the position information acquisition part to be stored in the memory device and the position information stored in the memory device to be outputted.

Abstract: There is provided a technique, including: a process chamber in which a substrate is processed; a substrate support member configured to support the substrate; an elevator configured to elevate the substrate support member; a gas supply port configured to supply a gas to the substrate; and a controller configured to control an elevating operation of the elevator so as to differentiate an interval between the gas supply port and the substrate supported by the substrate support member, when a gas is supplied from the gas supply port.

Abstract: Described herein is a technique capable of improving a quality of a film formed on a substrate. According to the technique described herein, there is provided a method of manufacturing a semiconductor device, including: (a) exhausting an inner atmosphere of a first gas supply pipe configured to supply a first gas generated by a vaporizer to a process chamber accommodating a substrate by a first gas discharge system connected to the first gas supply pipe; (b) exhausting an inner atmosphere of the vaporizer through a second gas discharge system provided at a vaporizer outlet pipe of the vaporizer by supplying an inert gas to the vaporizer via a vaporizer inlet pipe of the vaporizer; and (c) supplying the first gas generated by the vaporizer to the process chamber accommodating the substrate via the vaporizer outlet pipe, the first gas supply pipe and a first timing valve provided at the first gas supply pipe before (a) is performed or after (b) is performed.

Abstract: There is provided a technique that includes supplying a first process gas to a process space where a substrate is accommodated, and using an inert gas as a carrier gas of the first process gas; and supplying plasma of a second process gas to the process space where the substrate is accommodated, and using an active auxiliary gas as a carrier gas of the second process gas.

Abstract: A substrate processing apparatus includes a substrate mounting table on which a substrate is mounted, a process chamber including the substrate mounting table, a gas supply unit configured to supply a gas into the process chamber, and a plasma generating unit configured to convert the gas supplied into the process chamber from the gas supply unit into a plasma state. The plasma generating unit includes a plasma generating chamber configured to serve as a flow path of the gas supplied into the process chamber from the gas supply unit, and a plasma generating conductor configured by a conductor disposed to surround the plasma generating chamber. The plasma generating conductor includes a plurality of main conductor parts extending along a mainstream direction of the gas within the plasma generating chamber, and a plurality of connection conductor parts configured to electrically connect the plurality of main conductor parts with each other.

Abstract: A technique is described that provides efficient production management of a substrate processing system that includes a substrate processing apparatus and a mobile terminal. The substrate processing apparatus includes: at least one reactor where a substrate is processed; a transfer chamber adjacent to at least one reactor; a detector that detects a state of at least one reactor, a state of the transfer chamber, and generates monitored apparatus information representing the state of at least one reactor, and the state of the transfer chamber.

Abstract: Described herein is a technique capable of adjusting a plasma distribution of a processing region. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a substrate support configured to support a substrate; a dividing structure defining a processing region in a space facing the substrate support; a gas supply unit supplying a processing gas into the processing region; and a plasma generating unit generating an active species by plasmatizing the processing gas supplied into the processing region by the gas supply unit, and to control an activity of the active species independently for each portion of the processing region when plasmatizing the processing gas, wherein the plasma generating unit includes: a high frequency power supply unit installed in each portion of the processing region; and an impedance adjusting unit installed to correspond to the high frequency power supply unit.

Abstract: A substrate processing apparatus includes a heat storage part on which a substrate is mounted, a tray including the heat storage part, a substrate transfer part including a rotary shaft and a rotating plate supported by the rotary shaft and being configured such that the tray can be mounted on the rotating plate, a plurality of bases arranged circumferentially around the rotary shaft; and a heater provided for each of the bases.

Abstract: Described herein is a technique capable of improving the uniformity of device characteristics. According to the technique described herein, there is provided a method of processing a substrate, including: (a) loading a substrate having a patterned hard mask into a process chamber; (b) supplying a metal-containing gas at a first pressure into the process chamber; and (c) supplying an inert gas into the process chamber and storing the metal-containing gas at a second pressure lower than the first pressure after performing (b).

Abstract: Described herein is a technique capable of improving the uniformity of device characteristics. According to the technique described herein, there is provided a method of processing a substrate, including: (a) loading a substrate having a patterned hard mask into a process chamber; (b) supplying a metal-containing gas at a first pressure into the process chamber; and (c) supplying an inert gas into the process chamber and storing the metal-containing gas at a second pressure lower than the first pressure after performing (b).

Abstract: A substrate processing apparatus includes: a process chamber where a substrate is processed; a substrate support, disposed in the process chamber, where the substrate is placed; a transfer chamber disposed under the process chamber; a partition dividing the process and transfer chambers; a first heating unit disposed in the substrate support to heat the substrate and the process chamber; a second heating unit disposed in the transfer chamber to heat the transfer chamber; a process gas supply unit to supply a process gas into the process chamber; a first cleaning gas supply unit to supply a cleaning gas into the process chamber; a second cleaning gas supply unit to supply the cleaning gas into the transfer chamber; and a control unit to control the first heating unit, the second heating unit, the process gas supply unit, the first cleaning gas supply unit and the second cleaning gas supply unit.

Abstract: A method of manufacturing a semiconductor device includes receiving film thickness distribution data of a polished first insulating film of a substrate; calculating processing data for reducing a difference between a film thickness at a center side of the substrate and a film thickness at a periphery side of the substrate, based on the film thickness distribution data; loading the substrate into a process chamber; supplying a process gas to the substrate; and correcting a film thickness of the first insulating film based on the processing data by activating the process gas so that a concentration of active species of the process gas generated at the center side of the substrate differs from a concentration of active species of the process gas generated at the periphery side of the substrate.

Abstract: The present invention provides a technique for improving the productivity of a processing apparatus including a plurality of process chambers. There is provided a technique including a method for manufacturing a semiconductor device including: (a) transferring a last remaining substrate stored in an xth storage unit of a plurality of storage units to an empty nth chamber in an mth processing unit of a plurality of processing units; and (b) transferring a first one of a plurality of substrates stored in an (x+1)th storage unit of the plurality of storage units to one of chambers in an (m+1)th processing unit of the plurality of processing units (where x, m and n are natural numbers).