Abstract: Disclosed are an image capture apparatus that includes an image sensor capable of acquiring parallax images, and calculates the amount of parallax while reducing the amount of data that is to be transmitted or recorded, and a method for controlling the same. The image capture apparatus less frequently outputs a second image signal than a first image signal, wherein the first image signal is generated based on all of the photoelectric signals of the plurality of photoelectric conversion units of each pixel, and wherein the second image signal is generated based on at least one of but not all of the photoelectric signals.

Abstract: The present invention provides a technique for improving the productivity of a processing apparatus including a plurality of process chambers. There is provided a technique including a method for manufacturing a semiconductor device including: (a) transferring a last remaining substrate stored in an xth storage unit of a plurality of storage units to an empty nth chamber in an mth processing unit of a plurality of processing units; and (b) transferring a first one of a plurality of substrates stored in an (x+1)th storage unit of the plurality of storage units to one of chambers in an (m+1)th processing unit of the plurality of processing units (where x, m and n are natural numbers).

Abstract: A substrate processing apparatus includes: a process chamber; a fluid supply unit supplying to the process chamber a fluid; a fluid supply pipe connecting the fluid supply unit to the process chamber; a first fluid discharge pipe connecting the process chamber to the fluid supply unit; a second fluid discharge pipe whereat a heat exchange unit is installed, the second fluid discharge pipe connecting the fluid supply unit to the fluid supply pipe; a flow path switching unit; and a control unit controlling the fluid supply unit and flow path switching unit to stop a supply of the fluid from the fluid supply pipe to the process chamber and supply the fluid from the fluid supply pipe to the heat exchange unit after the substrate is processed. The substrate processing apparatus suppresses temperature variation of fluid in the fluid supply unit depending on a situation of the process chamber.

Abstract: An image processing apparatus, determines, using a pixel signal included in a region referenced on a pixel of interest of a target image, a direction having a high signal correlation in the region, performs, using pixel signals from neighboring pixels of the pixel of interest based on a determination result, interpolation processing for interpolating a pixel signal of the pixel of interest, and performs reduction by reducing the number of pixels of the interpolated image, wherein the interpolation processing is executed according to a reduction rate used in the reduction, such that a high frequency component of the image decreases as a degree of reduction increases, while applying a weight to the pixel signal of a pixel, among the neighboring pixels, located in the direction determined as having the high correlation based on the determination result.

Abstract: A technique is provided in which a deviation of a characteristic of a semiconductor device is suppressed from occurring. The technique includes a method of a manufacturing a semiconductor device, including: (a) polishing a first silicon-containing layer formed on a substrate including a convex structure; (b) obtaining a data representing a height distribution of a surface of the first silicon-containing layer after performing the step (a); (c) determining a process condition; and (d) supplying a process gas to form a second silicon-containing layer wherein the process gas is activated such that a concentration of an active species of the process gas at a center portion of the substrate differs from a concentration of an active species at a peripheral portion of the substrate to adjust heights of surfaces of a laminated film according to the process condition.

Abstract: A substrate processing apparatus includes: a process chamber configured to process a substrate; a substrate mounting stand installed in the process chamber and configured to hold the substrate; a heating part configured to heat the substrate; a gas rectifying part configured to supply a process gas to the substrate; a sealing part installed in the gas rectifying part; a heat insulating part installed between the sealing part and an upstream side surface of the gas rectifying part; and a first pressure adjusting part connected to the heat insulating part.

Abstract: A method of manufacturing a semiconductor device includes receiving film thickness distribution data of a polished first insulating film of a substrate; calculating processing data for reducing a difference between a film thickness at a center side of the substrate and a film thickness at a periphery side of the substrate, based on the film thickness distribution data; loading the substrate into a process chamber; supplying a process gas to the substrate; and correcting a film thickness of the first insulating film based on the processing data by activating the process gas so that a concentration of active species of the process gas generated at the center side of the substrate differs from a concentration of active species of the process gas generated at the periphery side of the substrate.

Abstract: A technique partially adjusts a plasma distribution in a processing region in order to suppress the reduction in in-plane uniformity of a film formed on a substrate. Provided is a substrate processing apparatus including: a substrate support configured to support a substrate; a dividing structure defining a processing region in a space facing the substrate support; a gas supply unit configured to supply a processing gas into the processing region; and a plasma generating unit configured to generate an active species by plasmatizing the processing gas supplied into the processing region by the gas supply unit, and to control an activity of the active species independently for each portion of the processing region when plasmatizing the processing gas.

Abstract: A substrate processing apparatus includes a substrate mounting table on which a substrate is mounted, a process chamber including the substrate mounting table, a gas supply unit configured to supply a gas into the process chamber, and a plasma generating unit configured to convert the gas supplied into the process chamber from the gas supply unit into a plasma state. The plasma generating unit includes a plasma generating chamber configured to serve as a flow path of the gas supplied into the process chamber from the gas supply unit, and a plasma generating conductor configured by a conductor disposed to surround the plasma generating chamber. The plasma generating conductor includes a plurality of main conductor parts extending along a mainstream direction of the gas within the plasma generating chamber, and a plurality of connection conductor parts configured to electrically connect the plurality of main conductor parts with each other.

Abstract: A substrate processing apparatus may include a process chamber configured to accommodate a substrate having a metal film polished on a first insulating film and a second insulating film polished on the metal film; a process gas supply part configured to supply a process gas to the substrate; an activation part configured to activate the process gas; a computation part configured to compute processing data for adjusting a film thickness distribution of a stacked insulating film having the polished second insulating film and a third insulating film by adjusting a film thickness distribution of the third insulating film based on the film thickness distribution data of the polished second insulating film; and a control part configured to control the process gas supply part and the activation part to adjust the film thickness distribution of the stacked insulating film based on the processing data.

Abstract: A substrate processing apparatus includes: a process chamber configured to process a substrate; a substrate mounting stand installed in the process chamber and configured to hold the substrate; a heating part configured to heat the substrate; a gas rectifying part configured to supply a process gas to the substrate; a sealing part installed in the gas rectifying part; a heat insulating part installed between the sealing part and an upstream side surface of the gas rectifying part; and a first pressure adjusting part connected to the heat insulating part.

Abstract: A first signal of a pixel of interest in second image data is generated by adding a plurality of signals that correspond to the same color component in first image data consisting of signals corresponding to a plurality of color components. A second signal of the pixel of interest in the second image data is generated by adding a plurality of signals in the first image data that correspond to different color components. The first signal and the second signal are mixed based on color information of the pixel of interest. Jaggies are effectively ameliorated by replacing the value of the pixel of interest with the mixing result.

Abstract: An image processing apparatus, determines, using a pixel signal included in a region referenced on a pixel of interest of a target image, a direction having a high signal correlation in the region, performs, using pixel signals from neighboring pixels of the pixel of interest based on a determination result, interpolation processing for interpolating a pixel signal of the pixel of interest, and performs reduction by reducing the number of pixels of the interpolated image, wherein the interpolation processing is executed according to a reduction rate used in the reduction, such that a high frequency component of the image decreases as a degree of reduction increases, while applying a weight to the pixel signal of a pixel, among the neighboring pixels, located in the direction determined as having the high correlation based on the determination result.

Abstract: A method forms a film on a substrate to have different film thicknesses and features within a plane of the substrate and improves the manufacturing throughput. The method comprises: (a) supplying a first process gas from above a substrate and a second process gas from a lateral direction with respect to the substrate; and (b) supplying a first reactive gas from above the substrate and a second reactive gas from the lateral direction with respect to the substrate, wherein at least one of (a) and (b) is performed at least once in a manner that a total amount of the first and second process gases supplied to the substrate center is different from that of the first and second process gases supplied to the substrate periphery.

Abstract: Disclosed are an image capture apparatus that includes an image sensor capable of acquiring parallax images, and calculates the amount of parallax while reducing the amount of data that is to be transmitted or recorded, and a method for controlling the same. The image capture apparatus less frequently outputs a second image signal than a first image signal, wherein the first image signal is generated based on all of the photoelectric signals of the plurality of photoelectric conversion units of each pixel, and wherein the second image signal is generated based on at least one of but not all of the photoelectric signals.

Abstract: A substrate processing apparatus includes a processing chamber accommodating a substrate; first and second process gas supply units that respectively supply first and second process gases from above and laterally relative to the substrate; and first and second reactive gas supply units that respectively supply first and second reactive gases from above and laterally relative to the substrate. A control unit controls the other units such that a total amount of the first and second process gases supplied to a center portion of the substrate is different from that supplied to a peripheral portion of the substrate, or a total amount of the first and second reactive gases supplied to the center portion of the substrate is different from that supplied to the peripheral portion of the substrate.

Abstract: A first signal of a pixel of interest in second image data is generated by adding a plurality of signals that correspond to the same color component in first image data consisting of signals corresponding to a plurality of color components. A second signal of the pixel of interest in the second image data is generated by adding a plurality of signals in the first image data that correspond to different color components. The first signal and the second signal are mixed based on color information of the pixel of interest. Jaggies are effectively ameliorated by replacing the value of the pixel of interest with the mixing result.