Abstract: A method of making a semiconductor device includes forming a first transistor on a substrate, wherein forming the first transistor comprises forming a first source/drain electrode in the substrate. The method further includes forming a second transistor on the substrate, wherein forming the second transistor comprises forming a second source/drain electrode. The method further includes forming an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode, and the insulating layer extends above a top-most surface of the substrate.

Abstract: A method of making a semiconductor device includes forming a first transistor on a substrate, wherein forming the first transistor comprises forming a first source/drain electrode in the substrate. The method further includes forming a second transistor on the substrate, wherein forming the second transistor comprises forming a second source/drain electrode. The method further includes forming an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode, a top surface of the insulating layer is above a top surface of the substrate.

Abstract: Provided are MIM capacitor and semiconductor structure including MIM capacitor. The MIM capacitor includes a dielectric structure, a bottom electrode on the dielectric structure, a first insulating layer covering the bottom electrode and the dielectric structure, a middle electrode stacked on the bottom electrode, a spacer, a second insulating layer and a top electrode. The middle electrode is separate from the bottom electrode by the first insulating layer therebetween. A bottommost surface of the middle electrode is lower than a top surface of the bottom electrode and higher than a bottom surface of the bottom electrode. The spacer is disposed on the first insulating layer and laterally aside and covers a sidewall of the middle electrode. The second insulating layer covers the middle electrode and the spacer. The top electrode is stacked on the middle electrode and separate from the middle electrode by the second insulating layer therebetween.

Abstract: A semiconductor structure includes a semiconductor strip in a seal ring area. The semiconductor structure further includes a dielectric structure extending into the semiconductor strip, wherein a plurality of metal structures and a plurality of via structures stack over the dielectric structure to form a seal ring structure.

Abstract: A method of making a semiconductor device includes forming a first transistor on a substrate, wherein forming the first transistor comprises forming a first source/drain electrode in the substrate. The method further includes forming a second transistor on the substrate, wherein forming the second transistor comprises forming a second source/drain electrode. The method further includes forming an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode, a top surface of the insulating layer is above a top surface of the substrate.

Abstract: A method includes forming parallel first and second dummy materials in an alternating manner. The method further includes etching portions of the first and second dummy materials, using respective selective etches, to form a plurality of gaps. The method further includes filling a first gap of the plurality of gaps with a dielectric material. The method further includes filling a second gap of the plurality of gaps with a conductive material.

Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a first transistor on the substrate, wherein the first transistor includes a first source/drain electrode in the substrate. The semiconductor device further includes a second transistor on the substrate, wherein the second transistor includes a second source/drain electrode. The semiconductor device further includes an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode, a top surface of the insulating layer is above a top surface of the substrate, and a sidewall of the insulating layer above the substrate is aligned with a sidewall of the insulating layer within the substrate.

Abstract: Provided are MIM capacitor and semiconductor structure including MIM capacitor. The MIM capacitor includes a dielectric structure, a bottom electrode on the dielectric structure, a first insulating layer covering the bottom electrode and the dielectric structure, a middle electrode stacked on the bottom electrode, a spacer, a second insulating layer and a top electrode. The middle electrode is separate from the bottom electrode by the first insulating layer therebetween. A bottommost surface of the middle electrode is lower than a top surface of the bottom electrode and higher than a bottom surface of the bottom electrode. The spacer is disposed on the first insulating layer and laterally aside and covers a sidewall of the middle electrode. The second insulating layer covers the middle electrode and the spacer. The top electrode is stacked on the middle electrode and separate from the middle electrode by the second insulating layer therebetween.

Abstract: Provided are MIM capacitor and method of manufacturing the same. The MIM capacitor includes a first electrode, a second electrode, a third electrode, a first insulating layer, a second insulating layer, and a first spacer. The first electrode and the third electrode are electrically connected to each other. The first insulating layer is between the first electrode and the second electrode. The second insulating layer is between the second electrode and the third electrode. The first spacer is located between a sidewall of the first electrode and the first insulating layer.

Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a first transistor on the substrate, wherein the first transistor includes a first source/drain electrode in the substrate. The semiconductor device further includes a second transistor on the substrate, wherein the second transistor includes a second source/drain electrode. The semiconductor device further includes an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode, a top surface of the insulating layer is above a top surface of the substrate, and a sidewall of the insulating layer above the substrate is aligned with a sidewall of the insulating layer within the substrate.

Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a first transistor on the substrate, wherein the first transistor includes a first source/drain electrode. The semiconductor device further includes a second transistor on the substrate, wherein the second transistor includes a second source/drain electrode. The semiconductor device further includes an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode.

Abstract: Provided are MIM capacitor and method of manufacturing the same. The MIM capacitor includes a first electrode, a second electrode, a third electrode, a first insulating layer, a second insulating layer, and a first spacer. The first electrode and the third electrode are electrically connected to each other. The first insulating layer is between the first electrode and the second electrode. The second insulating layer is between the second electrode and the third electrode. The first spacer is located between a sidewall of the first electrode and the first insulating layer.

Abstract: A semiconductor structure includes a semiconductor strip in a seal ring area. The semiconductor structure further includes a dielectric structure extending into the semiconductor strip, wherein a plurality of metal structures and a plurality of via structures stack over the dielectric structure to form a seal ring structure.

Abstract: A method of fabricating a semiconductor structure. The method includes forming a dummy structure over a semiconductor body. The method further includes depositing an inter-layer dielectric (ILD) over the semiconductor body. The method further includes removing a dummy material of the dummy structure to form an opening in the ILD. The method further includes filling the opening with a dielectric material to form a dielectric structure. The method further includes stacking a plurality of interconnect elements over the dielectric structure.

Abstract: A semiconductor device includes a substrate, source/drain contacts, gate structures, conductive elements, and a first stop layer. The substrate has source/drain regions formed therein. The source/drain contacts are over the substrate and each of the source/drain contacts is electrically connected to the respective source/drain region. The gate structures are arranged in parallel on the substrate. The source/drain regions are arranged at opposite sides of the gate structures. Each of the gate structures is sandwiched between two most adjacent source/drain contacts. The conductive element is on the source/drain contacts and crosses over the gate structures. The conductive element is overlapped with at least one gate structure and at least two most adjacent source/drain contacts and is electrically connected to the at least two most adjacent source/drain contacts.

Abstract: A semiconductor device includes an interconnect layer on an inter-layer dielectric (ILD) structure. The ILD structure includes: first contacts, extending through the ILD structure, electrically connected to corresponding first components located in a floor structure underlying the ILD structure; at least one second component located within the ILD structure and spaced from a surface of the ILD structure (in a direction perpendicular to a plane of the ILD structure) a distance which is less than a thickness of the ILD structure; and second contacts directly contacting corresponding first regions of the at least one second component. The interconnect layer includes: first metallization segments which directly contact corresponding ones of the first contacts; and second metallization segments located over a second region of the at least one second component, a width of the second metallization segments being less than a width of the first metallization segments.

Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a first transistor on the substrate, wherein the first transistor includes a first source/drain electrode. The semiconductor device further includes a second transistor on the substrate, wherein the second transistor includes a second source/drain electrode. The semiconductor device further includes an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode.

Abstract: A semiconductor device includes a substrate, source/drain contacts, gate structures, conductive elements, and a first stop layer. The substrate has source/drain regions formed therein. The source/drain contacts are over the substrate and each of the source/drain contacts is electrically connected to the respective source/drain region. The gate structures are arranged in parallel on the substrate. The source/drain regions are arranged at opposite sides of the gate structures. Each of the gate structures is sandwiched between two most adjacent source/drain contacts. The conductive element is on the source/drain contacts and crosses over the gate structures. The conductive element is overlapped with at least one gate structure and at least two most adjacent source/drain contacts and is electrically connected to the at least two most adjacent source/drain contacts.

Abstract: A method of fabricating a semiconductor device. The method includes forming a dummy structure over a substrate, forming conductive features on opposite sides of the dummy gate structure, removing the dummy structure and a portion of the substrate beneath the dummy gate structure to form a trench, and filling the trench with a dielectric material.

Abstract: A semiconductor device includes an interconnect layer on an inter-layer dielectric (ILD) structure. The ILD structure includes: first contacts, extending through the ILD structure, electrically connected to corresponding first components located in a floor structure underlying the ILD structure; at least one second component located within the ILD structure and spaced from a surface of the ILD structure (in a direction perpendicular to a plane of the ILD structure) a distance which is less than a thickness of the ILD structure; and second contacts directly contacting corresponding first regions of the at least one second component. The interconnect layer includes: first metallization segments which directly contact corresponding ones of the first contacts; and second metallization segments located over a second region of the at least one second component, a width of the second metallization segments being less than a width of the first metallization segments.