Patents by Inventor Shunichi Sato

Shunichi Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11296555
    Abstract: A power transmission system including a light output apparatus and a light receiving apparatus is provided. The light output apparatus includes a plurality of light sources having different wavelengths, and a light output control unit configured to control light outputs of the plurality of light sources, and the light receiving apparatus includes a photoelectric conversion element configured to absorb light beams emitted from the plurality of light sources, and convert the absorbed light beams into electrical power. The light output control unit individually sets each of the light outputs of the plurality of light sources.
    Type: Grant
    Filed: March 16, 2020
    Date of Patent: April 5, 2022
    Assignee: Ricoh Company, Ltd.
    Inventor: Shunichi Sato
  • Patent number: 11245249
    Abstract: A reflector includes a low refractive index layer and a high refractive index layer. The low refractive index layer has a first average refractive index and has a laminated structure in which an AlN layer and a GaN layer are alternately laminated. The high refractive index layer has a second average refractive index higher than the first average refractive index and includes an InGaN layer.
    Type: Grant
    Filed: February 27, 2019
    Date of Patent: February 8, 2022
    Assignee: RICOH COMPANY, LTD.
    Inventors: Takeshi Kawashima, Shunichi Sato, Morimasa Kaminishi, Hirokazu Iwata
  • Patent number: 11236904
    Abstract: Provided are: a useful bed medium for a fluidized bed with good fluidity, the bed medium being usable in a fluidized bed furnace using biomass material and coal material as fuel; and a useful bed medium for a fluidized bed with good durability, the bed medium not easily forming an agglomerate of its particles, and being resistant to collapsing. The bed medium for a fluidized bed in a fluidized bed furnace for combusting or gasifying the fuel is formed of artificially-produced spherical refractory particles containing not less than 40% by weight of Al2O3 and not more than 60% by weight of SiO2 and having an apparent porosity of not more than 5%, and a ratio by weight of agglomerated particles in the bed medium is not more than 20% after three heat treatment tests on the bed medium at 900° C. for 2 hours under coexistence with the fuel.
    Type: Grant
    Filed: March 19, 2020
    Date of Patent: February 1, 2022
    Assignee: Itochu Ceratech Corporation
    Inventors: Hiroshi Makino, Jun Sakamoto, Takayuki Kameda, Reiku Aoyama, Shunichi Sato, Yoji Okumura
  • Patent number: 10797470
    Abstract: A light emitting device includes: a first n-type semiconductor layer disposed on a substrate; a tunnel junction layer disposed on a part of the first n-type semiconductor layer; a p-type semiconductor layer disposed on the first n-type semiconductor layer and covering the tunnel junction layer; an active layer disposed on the p-type semiconductor layer; and a second n-type semiconductor layer disposed on the active layer.
    Type: Grant
    Filed: July 8, 2019
    Date of Patent: October 6, 2020
    Assignee: Ricoh Company, Ltd.
    Inventors: Takeshi Kawashima, Shunichi Sato
  • Publication number: 20200303964
    Abstract: A power transmission system including a light output apparatus and a light receiving apparatus is provided. The light output apparatus includes a plurality of light sources having different wavelengths, and a light output control unit configured to control light outputs of the plurality of light sources, and the light receiving apparatus includes a photoelectric conversion element configured to absorb light beams emitted from the plurality of light sources, and convert the absorbed light beams into electrical power. The light output control unit individually sets each of the light outputs of the plurality of light sources.
    Type: Application
    Filed: March 16, 2020
    Publication date: September 24, 2020
    Applicant: Ricoh Company, Ltd.
    Inventor: Shunichi SATO
  • Publication number: 20200217499
    Abstract: Provided are: a useful bed medium for a fluidized bed with good fluidity, the bed medium being usable in a fluidized bed furnace using biomass material and coal material as fuel; and a useful bed medium for a fluidized bed with good durability, the bed medium not easily forming an agglomerate of its particles, and being resistant to collapsing. The bed medium for a fluidized bed in a fluidized bed furnace for combusting or gasifying the fuel is formed of artificially-produced spherical refractory particles containing not less than 40% by weight of Al2O3 and not more than 60% by weight of SiO2 and having an apparent porosity of not more than 5%, and a ratio by weight of agglomerated particles in the bed medium is not more than 20% after three heat treatment tests on the bed medium at 900° C. for 2 hours under coexistence with the fuel.
    Type: Application
    Filed: March 19, 2020
    Publication date: July 9, 2020
    Applicant: ITOCHU CERATECH CORPORATION
    Inventors: Hiroshi Makino, Jun Sakamoto, Takayuki Kameda, Reiku Aoyama, Shunichi Sato, Yoji Okumura
  • Patent number: 10686089
    Abstract: A concentrator photovoltaic cell includes a light condenser element configured to condense light, a first photoelectric conversion cell configured to perform a photoelectric conversion, a second photoelectric conversion cell configured to perform a photoelectric conversion, a first output circuit configured to output a first output current which is output by the first photoelectric conversion cell, and a second output circuit configured to output a second output current which is output by the second photoelectric conversion cell.
    Type: Grant
    Filed: November 19, 2015
    Date of Patent: June 16, 2020
    Assignee: RICOH COMPANY, LTD.
    Inventor: Shunichi Sato
  • Publication number: 20200044416
    Abstract: A light emitting device includes: a first n-type semiconductor layer disposed on a substrate; a tunnel junction layer disposed on a part of the first n-type semiconductor layer; a p-type semiconductor layer disposed on the first n-type semiconductor layer and covering the tunnel junction layer; an active layer disposed on the p-type semiconductor layer; and a second n-type semiconductor layer disposed on the active layer.
    Type: Application
    Filed: July 8, 2019
    Publication date: February 6, 2020
    Applicant: Ricoh Company, Ltd.
    Inventors: TAKESHI KAWASHIMA, SHUNICHI SATO
  • Patent number: 10490684
    Abstract: A compound photovoltaic cell includes a substrate, a first cell made of a first semiconductor material and formed on the substrate, a tunnel layer, and a second cell made of a second semiconductor material lattice mismatched with a material of the substrate, connected to the first cell via the tunnel layer, and disposed on an incident side with respect to the first cell, wherein band gaps of the first and the second cells become smaller from an incident side to a back side, and wherein the tunnel layer includes a p-type layer disposed on the incident side and a n-type layer disposed on the back side, the p-type layer being a p+-type (Al)GaInAs layer, the n-type layer being an n+-type InP layer, an n+-type GaInP layer having a tensile strain with respect to InP or n+-type Ga(In)PSb layer having a tensile strain with respect to InP.
    Type: Grant
    Filed: April 10, 2017
    Date of Patent: November 26, 2019
    Assignee: RICOH COMPANY, LTD.
    Inventors: Shunichi Sato, Nobuhiko Nishiyama
  • Publication number: 20190273360
    Abstract: A reflector includes a low refractive index layer and a high refractive index layer. The low refractive index layer has a first average refractive index and has a laminated structure in which an AlN layer and a GaN layer are alternately laminated. The high refractive index layer has a second average refractive index higher than the first average refractive index and includes an InGaN layer.
    Type: Application
    Filed: February 27, 2019
    Publication date: September 5, 2019
    Inventors: Takeshi Kawashima, Shunichi Sato, Morimasa Kaminishi, Hirokazu Iwata
  • Patent number: 10084286
    Abstract: A surface emitting laser for emitting light with a wavelength ? includes a first reflection mirror provided on a semiconductor substrate; a resonator region including an active layer provided on the first reflection mirror; a second reflection mirror, including plural low refraction index layers and plural high refraction index layers, provided on the resonator region; a contact layer provided on the second reflection mirror; a third reflection mirror provided on the contact layer; and an electric current narrowing layer provided between the active layer and the second reflection mirror or in the second reflection mirror. Optical lengths of at least one of thicknesses of the low refraction index layers and the high refraction index layers formed between the electric current narrowing layer and the contact layer are (2N+1)×?/4 (N=1, 2, . . . ).
    Type: Grant
    Filed: February 24, 2015
    Date of Patent: September 25, 2018
    Assignee: RICOH COMPANY, LTD.
    Inventors: Ryoichiro Suzuki, Shunichi Sato
  • Patent number: 10060759
    Abstract: A rotational angle detecting device may include a flat face part formed on a detected object, and a permanent magnet having a magnetic pole face facing the flat face part. The device may also include a pair of first yokes arranged in line symmetry along a magnetization direction and project in parallel with a rotational axis of the detected object from the permanent magnet, and a second yoke spaced from projecting ends of the first yokes to face a face of the permanent magnet, the first yokes projecting from the face. The device may further include a magnetic detection element having a magnetic sensitive part positioned in a detection point corresponding to each of the first yokes, and may be configured to detect magnetic flux densities in directions parallel with the rotational axis and a magnetic flux density in a direction perpendicular to the rotational axis and the reference line.
    Type: Grant
    Filed: July 31, 2016
    Date of Patent: August 28, 2018
    Assignee: Valeo Japan Co., LTD.
    Inventor: Shunichi Sato
  • Patent number: 10008627
    Abstract: A photovoltaic cell manufacturing method includes depositing a first buffer layer for performing lattice relaxation on a first silicon substrate; depositing a first photoelectric conversion cell on the first buffer layer, the first photoelectric conversion cell being formed with a compound semiconductor including a pn junction, and the first photoelectric conversion cell having a lattice constant that is higher than that of silicon; connecting a support substrate to the first photoelectric conversion cell to form a first layered body; and removing the first buffer layer and the first silicon substrate from the first layered body.
    Type: Grant
    Filed: August 5, 2016
    Date of Patent: June 26, 2018
    Assignee: RICOH COMPANY, LTD.
    Inventors: Shunichi Sato, Nobuhiko Nishiyama
  • Patent number: 9831633
    Abstract: A disclosed surface-emitting laser module includes a surface-emitting laser formed on a substrate to emit light perpendicular to its surface, a package including a recess portion in which the substrate having the surface-emitting laser is arranged, and a transparent substrate arranged to cover the recess portion of the package and the substrate having the surface-emitting laser such that the transparent substrate and the package are connected on a light emitting side of the surface-emitting laser. In the surface-emitting laser module, a high reflectance region and a low reflectance region are formed within a region enclosed by an electrode on an upper part of a mesa of the surface-emitting laser, and the transparent substrate is slanted to the surface of the substrate having the surface-emitting laser in a polarization direction of the light emitted from the surface-emitting laser determined by the high reflectance region and the low reflectance region.
    Type: Grant
    Filed: January 20, 2016
    Date of Patent: November 28, 2017
    Assignee: RICOH COMPANY, LTD.
    Inventors: Toshihiro Ishii, Satoru Sugawara, Yoshihiro Ohba, Kazuhiro Harasaka, Shunichi Sato, Kazuhiko Adachi
  • Patent number: 9733058
    Abstract: A proximity sensor with high accuracy without being subject to an influence due to magnet variations is disclosed. A first yoke is insert-molded in an intermediate position between N and S poles of a magnet, and a projecting portion of the first yoke projects from a wall face of the magnet vertically to a magnetic pole face. A protruding portion of a second yoke opposes the projecting portion to arrange a main body portion in parallel with the wall face of the magnet, and a hall IC having a direction of connecting the projecting portion and the protruding portion as a magnetic responsive direction is arranged in a space between the projecting portion and the protruding portion.
    Type: Grant
    Filed: June 22, 2012
    Date of Patent: August 15, 2017
    Assignee: Valeo Japan Co., Ltd.
    Inventor: Shunichi Sato
  • Publication number: 20170213932
    Abstract: A compound photovoltaic cell includes a substrate, a first cell made of a first semiconductor material and formed on the substrate, a tunnel layer, and a second cell made of a second semiconductor material lattice mismatched with a material of the substrate, connected to the first cell via the tunnel layer, and disposed on an incident side with respect to the first cell, wherein band gaps of the first and the second cells become smaller from an incident side to a back side, and wherein the tunnel layer includes a p-type layer disposed on the incident side and a n-type layer disposed on the back side, the p-type layer being a p+-type (Al)GaInAs layer, the n-type layer being an n+-type InP layer, an n+-type GaInP layer having a tensile strain with respect to InP or n+-type Ga(In)PSb layer having a tensile strain with respect to InP.
    Type: Application
    Filed: April 10, 2017
    Publication date: July 27, 2017
    Applicant: RICOH COMPANY, LTD.
    Inventors: Shunichi SATO, Nobuhiko Nishiyama
  • Publication number: 20170122776
    Abstract: A rotational angle detecting device may include a flat face part formed on a detected object, and a permanent magnet having a magnetic pole face facing the flat face part. The device may also include a pair of first yokes arranged in line symmetry along a magnetization direction and project in parallel with a rotational axis of the detected object from the permanent magnet, and a second yoke spaced from projecting ends of the first yokes to face a face of the permanent magnet, the first yokes projecting from the face. The device may further include a magnetic detection element having a magnetic sensitive part positioned in a detection point corresponding to each of the first yokes, and may be configured to detect magnetic flux densities in directions parallel with the rotational axis and a magnetic flux density in a direction perpendicular to the rotational axis and the reference line.
    Type: Application
    Filed: July 31, 2016
    Publication date: May 4, 2017
    Inventor: Shunichi Sato
  • Publication number: 20170077340
    Abstract: A compound-semiconductor photovoltaic cell includes a first photoelectric conversion cell made of a first compound-semiconductor material which lattice matches with GaAs or Ge; a first tunnel junction layer arranged on a deep side farther than the first photoelectric conversion cell in a light incident direction, and including a first p-type (Alx1Ga1-x1)y1In1-y1As (0?x1<1, 0<y1?1) layer and a first n-type (Alx2Ga1-x2)y2In1-y2P (0?x2<1, 0<y2<1) layer; and a second photoelectric conversion cell arranged on a deep side farther than the first tunnel junction layer in the light incident direction, and made of a second compound-semiconductor material which is a GaAs-based semiconductor material. The first photoelectric conversion cell and the second photoelectric conversion cell are joined via the first tunnel junction layer, and a lattice constant of the first n-type (Alx2Ga1-x2)y2In1-y2P layer is greater than a lattice constant of the first photoelectric conversion cell.
    Type: Application
    Filed: July 8, 2015
    Publication date: March 16, 2017
    Applicant: RICH COMPANY, LTD.
    Inventor: Shunichi SATO
  • Patent number: 9570887
    Abstract: A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure.
    Type: Grant
    Filed: October 13, 2014
    Date of Patent: February 14, 2017
    Assignee: RICOH COMPANY, LTD.
    Inventors: Naoto Jikutani, Shunichi Sato, Satoru Sugawara, Hiroshi Motomura
  • Publication number: 20170025820
    Abstract: A surface emitting laser for emitting light with a wavelength ? includes a first reflection mirror provided on a semiconductor substrate; a resonator region including an active layer provided on the first reflection mirror; a second reflection mirror, including plural low refraction index layers and plural high refraction index layers, provided on the resonator region; a contact layer provided on the second reflection mirror; a third reflection mirror provided on the contact layer; and an electric current narrowing layer provided between the active layer and the second reflection mirror or in the second reflection mirror. Optical lengths of at least one of thicknesses of the low refraction index layers and the high refraction index layers formed between the electric current narrowing layer and the contact layer are (2N+1)×?/4 (N=1, 2, . . . ).
    Type: Application
    Filed: February 24, 2015
    Publication date: January 26, 2017
    Applicant: RICOH COMPANY, LTD.
    Inventors: Ryoichiro SUZUKI, Shunichi SATO