Abstract: A semiconductor light-emitting device includes a translucent substrate, a row of light-emitting elements on the substrate, an insulating layer, and first and second electrode pads. Each light-emitting element includes a first semiconductor layer of a first conductivity type formed on the substrate, a light-emitting layer formed on the first semiconductor layer, a second semiconductor layer of opposite conductivity type formed on the light-emitting layer, a first electrode on the first semiconductor layer, and a second electrode on the second semiconductor layer. The insulating layer covers the light-emitting elements so as to form a first opening and a second opening. The first opening exposes the first electrode of the light-emitting element in one end side of the row of light-emitting elements. The second opening exposes the second electrode of the light-emitting element in another end side of the row of light-emitting elements.

Abstract: A light emitting element includes an active layer; and a first reflecting mirror over the active layer. The first reflecting mirror includes a multilayer-film reflecting mirror and a first layer on a first surface. The multilayer-film reflecting mirror has the first surface and a second surface closer to the active layer than the first surface, and includes a first refractive-index layer having a first refractive index; and a second refractive-index layer having a second refractive index higher than the first refractive index. The first refractive-index layer and the second refractive-index layer are alternately stacked. The first surface has an emission region from which the light generated in the active layer is emitted. The first layer is in the emission region of the first surface and is configured to absorb a portion of the light emitted from the first surface and transmit another portion of the light through the first layer.

Abstract: A compound-semiconductor photovoltaic cell includes a first photoelectric conversion cell made of a first compound-semiconductor material which lattice matches with GaAs or Ge; a first tunnel junction layer arranged on a deep side farther than the first photoelectric conversion cell in a light incident direction, and including a first p-type (Alx1Ga1-x1)y1In1-y1As (0?x1<1, 0<y1?1) layer and a first n-type (Alx2Ga1-x2)y2In1-y2P (0?x2<1, 0<y2<1) layer; and a second photoelectric conversion cell arranged on a deep side farther than the first tunnel junction layer in the light incident direction, and made of a second compound-semiconductor material which is a GaAs-based semiconductor material. The first photoelectric conversion cell and the second photoelectric conversion cell are joined via the first tunnel junction layer, and a lattice constant of the first n-type (Alx2Ga1-x2)y2In1-y2P layer is greater than a lattice constant of the first photoelectric conversion cell.

Abstract: A power transmission system including a light output apparatus and a light receiving apparatus is provided. The light output apparatus includes a plurality of light sources having different wavelengths, and a light output control unit configured to control light outputs of the plurality of light sources, and the light receiving apparatus includes a photoelectric conversion element configured to absorb light beams emitted from the plurality of light sources, and convert the absorbed light beams into electrical power. The light output control unit individually sets each of the light outputs of the plurality of light sources.

Abstract: A reflector includes a low refractive index layer and a high refractive index layer. The low refractive index layer has a first average refractive index and has a laminated structure in which an AlN layer and a GaN layer are alternately laminated. The high refractive index layer has a second average refractive index higher than the first average refractive index and includes an InGaN layer.

Abstract: Provided are: a useful bed medium for a fluidized bed with good fluidity, the bed medium being usable in a fluidized bed furnace using biomass material and coal material as fuel; and a useful bed medium for a fluidized bed with good durability, the bed medium not easily forming an agglomerate of its particles, and being resistant to collapsing. The bed medium for a fluidized bed in a fluidized bed furnace for combusting or gasifying the fuel is formed of artificially-produced spherical refractory particles containing not less than 40% by weight of Al2O3 and not more than 60% by weight of SiO2 and having an apparent porosity of not more than 5%, and a ratio by weight of agglomerated particles in the bed medium is not more than 20% after three heat treatment tests on the bed medium at 900° C. for 2 hours under coexistence with the fuel.

Abstract: A light emitting device includes: a first n-type semiconductor layer disposed on a substrate; a tunnel junction layer disposed on a part of the first n-type semiconductor layer; a p-type semiconductor layer disposed on the first n-type semiconductor layer and covering the tunnel junction layer; an active layer disposed on the p-type semiconductor layer; and a second n-type semiconductor layer disposed on the active layer.

Abstract: A power transmission system including a light output apparatus and a light receiving apparatus is provided. The light output apparatus includes a plurality of light sources having different wavelengths, and a light output control unit configured to control light outputs of the plurality of light sources, and the light receiving apparatus includes a photoelectric conversion element configured to absorb light beams emitted from the plurality of light sources, and convert the absorbed light beams into electrical power. The light output control unit individually sets each of the light outputs of the plurality of light sources.

Abstract: Provided are: a useful bed medium for a fluidized bed with good fluidity, the bed medium being usable in a fluidized bed furnace using biomass material and coal material as fuel; and a useful bed medium for a fluidized bed with good durability, the bed medium not easily forming an agglomerate of its particles, and being resistant to collapsing. The bed medium for a fluidized bed in a fluidized bed furnace for combusting or gasifying the fuel is formed of artificially-produced spherical refractory particles containing not less than 40% by weight of Al2O3 and not more than 60% by weight of SiO2 and having an apparent porosity of not more than 5%, and a ratio by weight of agglomerated particles in the bed medium is not more than 20% after three heat treatment tests on the bed medium at 900° C. for 2 hours under coexistence with the fuel.

Abstract: A concentrator photovoltaic cell includes a light condenser element configured to condense light, a first photoelectric conversion cell configured to perform a photoelectric conversion, a second photoelectric conversion cell configured to perform a photoelectric conversion, a first output circuit configured to output a first output current which is output by the first photoelectric conversion cell, and a second output circuit configured to output a second output current which is output by the second photoelectric conversion cell.

Abstract: A light emitting device includes: a first n-type semiconductor layer disposed on a substrate; a tunnel junction layer disposed on a part of the first n-type semiconductor layer; a p-type semiconductor layer disposed on the first n-type semiconductor layer and covering the tunnel junction layer; an active layer disposed on the p-type semiconductor layer; and a second n-type semiconductor layer disposed on the active layer.

Abstract: A compound photovoltaic cell includes a substrate, a first cell made of a first semiconductor material and formed on the substrate, a tunnel layer, and a second cell made of a second semiconductor material lattice mismatched with a material of the substrate, connected to the first cell via the tunnel layer, and disposed on an incident side with respect to the first cell, wherein band gaps of the first and the second cells become smaller from an incident side to a back side, and wherein the tunnel layer includes a p-type layer disposed on the incident side and a n-type layer disposed on the back side, the p-type layer being a p+-type (Al)GaInAs layer, the n-type layer being an n+-type InP layer, an n+-type GaInP layer having a tensile strain with respect to InP or n+-type Ga(In)PSb layer having a tensile strain with respect to InP.

Abstract: A reflector includes a low refractive index layer and a high refractive index layer. The low refractive index layer has a first average refractive index and has a laminated structure in which an AlN layer and a GaN layer are alternately laminated. The high refractive index layer has a second average refractive index higher than the first average refractive index and includes an InGaN layer.

Abstract: A surface emitting laser for emitting light with a wavelength ? includes a first reflection mirror provided on a semiconductor substrate; a resonator region including an active layer provided on the first reflection mirror; a second reflection mirror, including plural low refraction index layers and plural high refraction index layers, provided on the resonator region; a contact layer provided on the second reflection mirror; a third reflection mirror provided on the contact layer; and an electric current narrowing layer provided between the active layer and the second reflection mirror or in the second reflection mirror. Optical lengths of at least one of thicknesses of the low refraction index layers and the high refraction index layers formed between the electric current narrowing layer and the contact layer are (2N+1)×?/4 (N=1, 2, . . . ).

Abstract: A rotational angle detecting device may include a flat face part formed on a detected object, and a permanent magnet having a magnetic pole face facing the flat face part. The device may also include a pair of first yokes arranged in line symmetry along a magnetization direction and project in parallel with a rotational axis of the detected object from the permanent magnet, and a second yoke spaced from projecting ends of the first yokes to face a face of the permanent magnet, the first yokes projecting from the face. The device may further include a magnetic detection element having a magnetic sensitive part positioned in a detection point corresponding to each of the first yokes, and may be configured to detect magnetic flux densities in directions parallel with the rotational axis and a magnetic flux density in a direction perpendicular to the rotational axis and the reference line.

Abstract: A photovoltaic cell manufacturing method includes depositing a first buffer layer for performing lattice relaxation on a first silicon substrate; depositing a first photoelectric conversion cell on the first buffer layer, the first photoelectric conversion cell being formed with a compound semiconductor including a pn junction, and the first photoelectric conversion cell having a lattice constant that is higher than that of silicon; connecting a support substrate to the first photoelectric conversion cell to form a first layered body; and removing the first buffer layer and the first silicon substrate from the first layered body.

Abstract: A disclosed surface-emitting laser module includes a surface-emitting laser formed on a substrate to emit light perpendicular to its surface, a package including a recess portion in which the substrate having the surface-emitting laser is arranged, and a transparent substrate arranged to cover the recess portion of the package and the substrate having the surface-emitting laser such that the transparent substrate and the package are connected on a light emitting side of the surface-emitting laser. In the surface-emitting laser module, a high reflectance region and a low reflectance region are formed within a region enclosed by an electrode on an upper part of a mesa of the surface-emitting laser, and the transparent substrate is slanted to the surface of the substrate having the surface-emitting laser in a polarization direction of the light emitted from the surface-emitting laser determined by the high reflectance region and the low reflectance region.

Abstract: A proximity sensor with high accuracy without being subject to an influence due to magnet variations is disclosed. A first yoke is insert-molded in an intermediate position between N and S poles of a magnet, and a projecting portion of the first yoke projects from a wall face of the magnet vertically to a magnetic pole face. A protruding portion of a second yoke opposes the projecting portion to arrange a main body portion in parallel with the wall face of the magnet, and a hall IC having a direction of connecting the projecting portion and the protruding portion as a magnetic responsive direction is arranged in a space between the projecting portion and the protruding portion.

Abstract: A compound photovoltaic cell includes a substrate, a first cell made of a first semiconductor material and formed on the substrate, a tunnel layer, and a second cell made of a second semiconductor material lattice mismatched with a material of the substrate, connected to the first cell via the tunnel layer, and disposed on an incident side with respect to the first cell, wherein band gaps of the first and the second cells become smaller from an incident side to a back side, and wherein the tunnel layer includes a p-type layer disposed on the incident side and a n-type layer disposed on the back side, the p-type layer being a p+-type (Al)GaInAs layer, the n-type layer being an n+-type InP layer, an n+-type GaInP layer having a tensile strain with respect to InP or n+-type Ga(In)PSb layer having a tensile strain with respect to InP.

Abstract: A rotational angle detecting device may include a flat face part formed on a detected object, and a permanent magnet having a magnetic pole face facing the flat face part. The device may also include a pair of first yokes arranged in line symmetry along a magnetization direction and project in parallel with a rotational axis of the detected object from the permanent magnet, and a second yoke spaced from projecting ends of the first yokes to face a face of the permanent magnet, the first yokes projecting from the face. The device may further include a magnetic detection element having a magnetic sensitive part positioned in a detection point corresponding to each of the first yokes, and may be configured to detect magnetic flux densities in directions parallel with the rotational axis and a magnetic flux density in a direction perpendicular to the rotational axis and the reference line.