Abstract: A heater substrate for heating an alkali metal cell including an alkali metal includes a first heater wiring formed in a region surrounding an alkali metal encapsulating part in which the alkali metal is encapsulated; a second heater wiring formed in the region surrounding the alkali metal encapsulating part and inside the first heater wiring; and a third heater wiring formed outside the first heater wiring. A first electric current flowing in the first heater wiring is divided into a second electric current flowing in the second heater wiring and a third electric current flowing in the third heater wiring. A direction of the first electric current is opposite to a direction of the second electric current and a direction of the third electric current.

Abstract: A disclosed surface emitting laser device includes a light emitting section having a mesa structure where a lower reflection mirror, an oscillation structure, and an upper reflection mirror are laminated on a substrate, the oscillation structure including an active layer, the upper reflection mirror including a current confined structure where an oxide surrounds a current passage region, a first dielectric film that coats the entire surface of an emitting region of the light emitting section, the transparent dielectric including a part where the refractive index is relatively high and a part where the refractive index is relatively low, and a second dielectric film that coats a peripheral part on the upper surface of the mesa structure. Further, the dielectric film includes a lower dielectric film and an upper dielectric film, and the lower dielectric film is coated with the upper dielectric film.

Abstract: A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure.

Abstract: An atomic oscillator is disclosed, including an Alkaline metal cell, a light source illuminating a laser beam to the Alkaline metal cell, and a light detector detecting light passing through the Alkaline metal cell. The Alkaline metal cell includes a first member, a second member, a cell internal portion, and an Alkaline metal raw material. In the first member, a first glass substrate is bonded on a second surface of a first substrate where a first opening part is formed. In the second member, a second glass substrate is bonded to a fourth surface of a second substrate where a second opening part is formed. The cell internal portion is formed by the first opening part and the second opening part by bonding the first surface to the third surface. The Alkaline metal raw material is enclosed by the cell internal portion.

Abstract: A surface emitting laser device includes a substrate, a lower reflector, an active layer, an upper reflector, and surface emitting lasers configured to emit light. A second phase adjustment layer, a contact layer, a first phase adjustment layer, and a wavelength adjustment layer are successively layered from the active layer side. The total optical thickness from the active layer side of the second phase adjustment layer to the midsection of the wavelength adjustment layer is approximately (2N+1)×?/4, where ? represents a wavelength of light, and N represents a positive integer. The optical thickness from the active layer side of the second phase adjustment layer to the midsection of the contact layer is approximately N?/2. At least two of the surface emitting lasers have the wavelength adjustment layer arranged at different thicknesses and are configured to emit light with different wavelengths.

Abstract: A heater substrate for heating an alkali metal cell including an alkali metal includes a first heater wiring formed in a region surrounding an alkali metal encapsulating part in which the alkali metal is encapsulated; a second heater wiring formed in the region surrounding the alkali metal encapsulating part and inside the first heater wiring; and a third heater wiring formed outside the first heater wiring. A first electric current flowing in the first heater wiring is divided into a second electric current flowing in the second heater wiring and a third electric current flowing in the third heater wiring. A direction of the first electric current is opposite to a direction of the second electric current and a direction of the third electric current.

Abstract: A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions.

Abstract: A compound photovoltaic cell includes a substrate, a first cell made of a first semiconductor material and formed on the substrate, a tunnel layer, and a second cell made of a second semiconductor material lattice mismatched with a material of the substrate, connected to the first cell via the tunnel layer, and disposed on an incident side with respect to the first cell, wherein band gaps of the first and the second cells become smaller from an incident side to a back side, and wherein the tunnel layer includes a p-type layer disposed on the incident side and a n-type layer disposed on the back side, the p-type layer being a p+-type (Al)GaInAs layer, the n-type layer being an n+-type InP layer, an n+-type GaInP layer having a tensile strain with respect to InP or n+-type Ga(In)PSb layer having a tensile strain with respect to InP.

Abstract: A disclosed surface-emitting laser module includes a surface-emitting laser formed on a substrate to emit light perpendicular to its surface, a package including a recess portion in which the substrate having the surface-emitting laser is arranged, and a transparent substrate arranged to cover the recess portion of the package and the substrate having the surface-emitting laser such that the transparent substrate and the package are connected on a light emitting side of the surface-emitting laser. In the surface-emitting laser module, a high reflectance region and a low reflectance region are formed within a region enclosed by an electrode on an upper part of a mesa of the surface-emitting laser, and the transparent substrate is slanted to the surface of the substrate having the surface-emitting laser in a polarization direction of the light emitted from the surface-emitting laser determined by the high reflectance region and the low reflectance region.

Abstract: A disclosed surface-emitting laser module includes a surface-emitting laser formed on a substrate to emit light perpendicular to its surface, a package including a recess portion in which the substrate having the surface-emitting laser is arranged, and a transparent substrate arranged to cover the recess portion of the package and the substrate having the surface-emitting laser such that the transparent substrate and the package are connected on a light emitting side of the surface-emitting laser. In the surface-emitting laser module, a high reflectance region and a low reflectance region are formed within a region enclosed by an electrode on an upper part of a mesa of the surface-emitting laser, and the transparent substrate is slanted to the surface of the substrate having the surface-emitting laser in a polarization direction of the light emitted from the surface-emitting laser determined by the high reflectance region and the low reflectance region.

Abstract: A surface emitting laser element includes plural surface emitting lasers provided on a substrate. Each of the plural surface emitting lasers includes a first reflection mirror provided on the substrate; an active layer provided on the first reflection mirror; a wavelength adjustment region provided on the active layer; and a second reflection mirror provided on the wavelength adjustment region. The wavelength adjustment region includes a phase adjustment layer and a wavelength adjustment layer provided on the phase adjustment layer. A thickness of the wavelength adjustment region is approximately an odd multiple of a wavelength of emitted light divided by four. A thickness of the phase adjustment layer is approximately an even multiple of the wavelength of the emitted light divided by four. A thickness of the wavelength adjustment layer is different from a thickness of a wavelength adjustment layer of at least one of the other surface emitting lasers.

Abstract: Disclosed is a surface-emitting laser element including a semiconductor substrate and plural surface-emitting lasers configured to emit light mutually different wavelengths, each surface-emitting laser including a lower Bragg reflector provided on the semiconductor substrate, a resonator provided on the lower Bragg reflector, an upper Bragg reflector provided on the resonator, and a wavelength adjustment layer provided in the upper Bragg reflector or lower Bragg reflector, the wavelength adjustment layers included in the surface-emitting lasers having mutually different thicknesses, at least one of the wavelength adjustment layers including adjustment layers made of two kinds of materials, and numbers of the adjustment layers included in the wavelength adjustment layers being mutually different.

Abstract: A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure.

Abstract: A disclosed surface-emitting laser element includes a resonator structure having an active layer, a first semiconductor multilayer mirror and a second semiconductor multilayer mirror configured to sandwich the resonator structure having the active layer, an electrode provided around an emission region of a light-emitting surface, and a dielectric film provided in a peripheral portion within the emission region and outside a central portion of the emission region to make a reflectance of the peripheral portion lower than a reflectance of the central portion. In the surface-emitting laser element, an outer shape of a portion where the electrode provided around the emission region of the light-emitting surface is in contact with a contact layer includes corners.

Abstract: A disclosed surface emitting laser device includes a light emitting section having a mesa structure where a lower reflection mirror, an oscillation structure, and an upper reflection mirror are laminated on a substrate, the oscillation structure including an active layer, the upper reflection mirror including a current confined structure where an oxide surrounds a current passage region, a first dielectric film that coats the entire surface of an emitting region of the light emitting section, the transparent dielectric including a part where the refractive index is relatively high and a part where the refractive index is relatively low, and a second dielectric film that coats a peripheral part on the upper surface of the mesa structure. Further, the dielectric film includes a lower dielectric film and an upper dielectric film, and the lower dielectric film is coated with the upper dielectric film.

Abstract: [Problem] To provide a drying conveyer apparatus capable of efficiently and uniformly drying coarse particles. [Solution] The present invention is characterized in that a gas get portion (29) is provided on a bottom part of a conveyance member (25), a wind box (35) is provided for supplying drying gas (49) from blow the conveyance member (25), an object to be conveyed (2) is inputted within the conveyance member (25), the drying gas (35) is jetted from the gas jet portion (29) into the conveyance member (25) when the conveyance member (25) passes over the wind box (35), and the object to be conveyed (2) is dried while a fluidized bed thereof is formed.

Abstract: A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array, wherein a plurality of straight lines drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surface emission laser diode elements aligned in a second direction perpendicular to the first direction, are formed with generally equal interval in the first direction, the plurality of surface-emission laser diode elements are aligned in the first direction with an interval set to a reference value, and wherein the number of the surface-emission laser diode elements aligned in the first direction is smaller than the number of the surface-emission laser diode elements aligned in the second direction.

Abstract: A surface-emission laser device comprises an active layer, cavity spacer layers provided at both sides of the active layer, reflection layers provided at respective sides of the cavity spacer layers, the reflection layers reflecting an oscillation light oscillated in the active layer and a selective oxidation layer. The selective oxidation layer is provided between a location in the reflection layer corresponding to a fourth period node of the standing wave distribution of the electric field of the oscillating light and a location in the reflection layer adjacent to the foregoing fourth period node in the direction away from the active layer and corresponding to an anti-node of the standing wave distribution of the electric field of the oscillation light.

Abstract: A disclosed method of manufacturing a surface emitting laser includes laminating a transparent dielectric layer on an upper surface of a laminated body; forming a first resist pattern on an upper surface of the dielectric layer, the first resist pattern including a pattern defining an outer perimeter of a mesa structure and a pattern protecting a region corresponding to one of the relatively high reflection rate part and the relatively low reflection rate part included in an emitting region; etching the dielectric layer by using the first resist pattern as an etching mask; and forming a second resist pattern protecting a region corresponding to an entire emitting region. These steps are performed before the mesa structure is formed.

Abstract: A proximity sensor with high accuracy without being subject to an influence due to magnet variations is disclosed. A first yoke is insert-molded in an intermediate position between N and S poles of a magnet, and a projecting portion of the first yoke projects from a wall face of the magnet vertically to a magnetic pole face. A protruding portion of a second yoke opposes the projecting portion to arrange a main body portion in parallel with the wall face of the magnet, and a hall IC having a direction of connecting the projecting portion and the protruding portion as a magnetic responsive direction is arranged in a space between the projecting portion and the protruding portion.