Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: An optical semiconductor device operable in a 0.6 &mgr;m band includes an active layer of GaInNP sandwiched by a pair of GaInP layer with a thickness of about 2 molecular layers or less.

Abstract: A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

Abstract: A light emitting semiconductor device, which includes a Ga0.9In0.1As0.97 active layer disposed between lower n-Ga0.5In0.5P and upper p-Ga0.5In0.5P cladding layers, being provided with lower and upper GaAs spacing layers each intermediate the active layer and the cladding layer. The active layer is approximately lattice-matched to a GaAs substrate and has a thickness of about 0.1 &mgr;m with a photoluminescence peak wavelength of approximately 1.3 &mgr;m, and the GaAs spacing layers each have a thickness of about 2 nm.

Abstract: An integrated semiconductor optical-emitting device includes a surface-emission laser diode and an EA-type semiconductor optical modulator integrated commonly on a GaAs substrate in a direction perpendicular to the GaAs substrate.

Abstract: A laser diode includes an active layer of a group III-V compound semiconductor device containing N and As as the group V elements. The active layer has exposed lateral edges wherein the N atoms are substituted by the As atoms at the exposed lateral edges by an annealing process conducted in a AsH3 atmosphere.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier layers are formed of a Group-III-V mixed-crystal semiconductor that includes nitrogen and at least one other Group-V element, a nitrogen composition thereof being smaller than that of the quantum well active layer.

Abstract: A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in the quantum well layer is in excess of 2% against either the semiconductor substrate or cladding layer and, alternately, the thickness of the quantum well layer is in excess of the critical thickness calculated after Matthews and Blakeslee.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: A laser diode includes an active layer of a group III-V compound semiconductor device containing N and As as the group V elements. The active layer has exposed lateral edges wherein the N atoms are substituted by the As atoms at the exposed lateral edges by an annealing process conducted in a AsH3 atmosphere.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in the quantum well layer is in excess of 2% against either the semiconductor substrate or cladding layer and, alternately, the thickness of the quantum well layer is in excess of the critical thickness calculated after Matthews and Blakeslee.

Abstract: A light emitting semiconductor device, which includes a Ga0.9In0.1As0.97 active layer disposed between lower n-Ga0.5In0.5P and upper p-Ga0.5In0.5P cladding layers, being provided with lower and upper GaAs spacing layers each intermediate the active layer and the cladding layer. The active layer is approximately lattice-matched to a GaAs substrate and has a thickness of about 0.1 &mgr;m with a photoluminescence peak wavelength of approximately 1.3 &mgr;m, and the GaAs spacing layers each have a thickness of about 2 nm.

Abstract: A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

Abstract: A light emitting semiconductor device, comprising: a lower cladding layer of AlzGa1-zAs (0<z≦1) alloy semiconductor layers, having a first conductivity type; a lower light guide layer of AlzGa1-zAs (0<z≦1) alloy semiconductor layers, having a band gap narrower than that of the lower cladding layer; a lower spacing layer, comprising at least one molecular layer of GaAs; a GaxIn1-xNyAs1-y (0≦x≦1 and 0<y<1) active layer, having a thickness less than the critical thickness so as not to give rise to misfit dislocations and having a band gap narrower than that of the lower light guide layer; an upper spacing layer, comprising at least one molecular layer of GaAs; an upper light guide layer of AlzGa1-zAs (0<z≦1) alloy semiconductor layers, having a band gap narrower than that of the active layer and narrower than that of the lower cladding layer; and an upper cladding layer of AlzGa1-zAs (0<z≦1) alloy semiconductor layers, having a second conductivity type, each grown on a

Abstract: A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

Abstract: A light-emitting semiconductor device for producing red color optical radiation has a cladding layer of AlGaInPAs having a lattice constant between GaAs and GaP. Further, the laser diode uses an optical waveguide layer in the system of GaInPAs free from Al. The semiconductor device may be constructed on a GaPAs substrate.

Abstract: An optical semiconductor device operable in a 0.6 &mgr;m band includes an active layer of GaInNP sandwiched by a pair of GaInP layers each having a thickness of about 2 molecular layers or less.

Abstract: A light-emitting semiconductor device for producing red color optical radiation has a cladding layer of AlGaInPAs having a lattice constant between GaAs and GaP. Further, the laser diode uses an optical waveguide layer in the system of GaInPAs free from Al. The semiconductor device may be constructed on a GaPAs substrate.