Abstract: A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 &mgr;m or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: A laser diode includes a substrate, a lower cladding layer or a lower optical waveguide layer substantially free from Al and provided on the substrate, an active layer of a mixed crystal containing Ga and In as a group III element and N, As and/or P as a group V element, provided on the lower cladding layer; and an upper cladding layer or an upper optical waveguide layer substantially free from Al and provided on the active layer.

Abstract: An integrated semiconductor optical-emitting device includes a surface-emission laser diode and an EA-type semiconductor optical modulator integrated commonly on a GaAs substrate in a direction perpendicular to the GaAs substrate.

Abstract: Disclosed herein is a laser diode module having a thermoelectric cooling element, a laser diode, and a thermistor in a housing. The thermoelectric cooling element has a first surface and a second surface between which heat exchange is performed. The first surface is in close contact with an inner surface of the housing. A base is provided on the second surface in close contact therewith. A laser carrier and a thermistor carrier are provided on the base in close contact therewith. The laser diode and the thermistor are provided on the laser carrier and the thermistor carrier in close contact therewith, respectively. A portion of the base in the vicinity of the laser carrier is thermally connected to the housing by a metal plate, for example, thereby allowing high-precision temperature control of the laser diode.

Abstract: Nitrogen-containing III-V alloy semiconductor materials have both a conduction band offset &Dgr;Ec and a valence band offset &Dgr;Ev large enough for the practical applications to light emitting devices. The semiconductor materials are capable of providing laser diodes, having excellent temperature characteristics with emission wavelengths in the red spectral region and of 600 nm or smaller, and high brightness light emitting diodes with emission wavelengths in the visible spectral region. The light emitting device is fabricated on an n-GaAs substrate, which has the direction normal to the substrate surface is misoriented by 15° from the direction normal to the (100) plane toward the [011] direction. On the substrate, there disposed by MOCVD, for example, are an n-GaAs buffer layer, an n-(Al0.7Ga0.3)0.51In0.49P cladding layer, an (Al0.2Ga0.8)0.49In0.51N0.01P0.99 active layer, a p-(Al0.7Ga0.3)0.51In0.49P cladding layer, and a p-GaAs contact layer.

Abstract: A light emitting semiconductor device, which includes a Ga0.9 In0 1As0 97 active layer disposed between lower n-Ga0.5In0.5P and upper p-Ga0.5In0.5P cladding layers, being provided with lower and upper GaAs spacing layers each intermediate the active layer and the cladding layer. The active layer is approximately lattice-matched to a GaAs substrate and has a thickness of about 0.1 &mgr;m with a photoluminescence peak wavelength of approximately 1.3 &mgr;m, and the GaAs spacing layers each have a thickness of about 2 nm.

Abstract: A laser diode includes a substrate, a lower cladding layer or a lower optical waveguide layer substantially free from Al and provided on the substrate, an active layer of a mixed crystal containing Ga and In as a group III element and N, As and/or P as a group V element, provided on the lower cladding layer; and an upper cladding layer or an upper optical waveguide layer substantially free from Al and provided on the active layer.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: A light emitting semiconductor device, comprising: a GaAs substrate, a first semiconductor layer of AlzGa1−zAs (0<z≦1) or GatIn1−tPuAs1−u (0<t<1 and 0<u≦1), wherein the semiconductor layer has a band gap energy greater than that of GaAs, a spacer layer comprising at least one GaAs monolayer, wherein the spacer layer is formed on the semiconductor layer, and an active layer of GaxIn1−xNyAs1−y (0≦x ≦1 and 0<y<1) having a lattice strain not greater than 0.3% and lattice-matched with the GaAs substrate, wherein the active layer is formed on the spacer layer.

Abstract: A light emitting device is provided, which comprises a III-V semiconductor alloy layered structure as an active layer thereof, including N and at least one other group-V element, and at least one group-III element. The light emitting device is in use for red wavelength laser diodes having excellent temperature characteristics, visible wavelength laser diodes which may achieve emissions shorter wavelengths than 600 nm, visible region light emitting diodes having a high intensity, laser diodes for optical communication having excellent temperature characteristics, and similar light emitting devices. The III-V semiconductor alloy layered structure is provided to be used as an active layer for forming the light emitting device, which comprises first and second monatomic layers.

Abstract: A light emitting semiconductor device, which includes a Ga0 9 In0 1 As0 97 active layer disposed between lower n-Ga0 5 In0 5P and upper p-Ga0 5 In0 5 P cladding layers, being provided with lower and upper GaAs spacing layers each intermediate the active layer and the cladding layer. The active layer is approximately lattice-matched to a GaAs substrate and has a thickness of about 0.1 &mgr;m with a photoluminescence peak wavelength of approximately 1.3 &mgr;m, and the GaAs spacing layers each have a thickness of about 2 nm.

Abstract: A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in the quantum well layer is in excess of 2% against either the semiconductor substrate or cladding layer and, alternately, the thickness of the quantum well layer is in excess of the critical thickness calculated after Matthews and Blakeslee.

Abstract: A multilayer mirror includes a multilayer reflection structure formed of an alternate repetition of a first epitaxial layer of a first refractive index and a second epitaxial layer of a second refractive index larger than the first refractive index, wherein the second epitaxial layer includes a group III-V mixed crystal containing N as a group V element.

Abstract: A layered structure of a III-V semiconductor alloy is disclosed, including N and at least one of the other group-V elements and a plurality of the group-III elements, capable of having an improved crystallinity, and of being grown with an arbitrary elemental composition together with a higher N content. The III-V semiconductor alloy is composed of GaxIn1−xNyAs1−y (0<x<1 and 0<y<1) and the layered structure includes at least two kinds of monoatomic layers. The monoatomic layers each have a composition of Gax1In1−x1Ny1As1−y1, (0<x1≦1 and 0<y1<1) with either none or a first minimal In content, and of Gax2In1−x2Ny2As1−y2 (0≦x2<x1≦1 and 0<y2<1) with either a second In content larger than the first In content, or none of Al or Ga content, respectively, and are deposited in a predetermined order, to thereby result in a superlattice structure which is considered to be a a semiconductor alloy layer having a deduced average composition.

Abstract: A laser diode includes a substrate, a lower cladding layer or a lower optical waveguide layer substantially free from Al and provided on the substrate, an active layer of a mixed crystal containing Ga and In as a group III element and N, As and/or P as a group V element, provided on the lower cladding layer; and an upper cladding layer or an upper optical waveguide layer substantially free from Al and provided on the active layer.

Abstract: A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in the quantum well layer is in excess of 2% against either the semiconductor substrate or cladding layer and, alternately, the thickness of the quantum well layer is in excess of the critical thickness calculated after Matthews and Blakeslee.

Abstract: Nitrogen-containing III-V alloy semiconductor materials have both a conduction band offset .DELTA.Ec and a valence band offset .DELTA.Ev large enough for the practical applications to light emitting devices. The semiconductor materials are capable of providing laser diodes, having excellent temperature characteristics with emission wavelengths in the red spectral region and of 600 nm or smaller, and high brightness light emitting diodes with emission wavelengths in the visible spectral region. The light emitting device is fabricated on an n-GaAs substrate, which has the direction normal to the substrate surface is misoriented by 15.degree. from the direction normal to the (100) plane toward the [011] direction. On the substrate, there disposed by MOCVD, for example, are an n-GaAs buffer layer, an n-(Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.49 P cladding layer, an (Al.sub.0.2 Ga.sub.0.8).sub.0.49 In.sub.0.51 N.sub.0.01 P.sub.0.99 active layer, a p-(Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.

Abstract: A sliding switch contact structure that has a movable contact and a fixed contact which are formed of a stainless steel, an Fe--Ni alloy, an Fe--Ni--Co alloy, or an Fe--Ni--Cr alloy. With such structure, a contact material is provided that is usable in a slide switch operating in high temperature oil contained within a transmission, an engine or a brake hydraulic system of an automotive vehicle.

Abstract: The invention is intended to provide a three-dimensional image projecting device which is capable of presenting a three-dimensional image observable in a wide visual field without tiring eyes of an observer. A three-dimensional image displayed by three-dimensional image displaying means is projected by a reflection type projecting hologram lens and reflection type hologram acting as optical transferring means and a reflection type hologram lens to produce respective three-dimensional images. These three-dimensional images are formed at the same magnification in the same space to form a continuous image area. For this purpose, reflection type hologram lenses are disposed on the periphery of a circle. Respective three-dimensional images is reflected by the reflection type hologram acting as the optical transferring means, thus an enlarged three-dimensional image can be seen over the respective visual fields.