Abstract: A carrier wave generating unit for generating a carrier wave signal; a modulating unit for generating a modulated wave signal by performing amplitude modulation on the carrier wave signal generated by the carrier wave generating unit with an audio signal; an adding unit for adding the carrier wave signal generated by the carrier wave generating unit and the modulated wave signal generated by the modulating unit to generate a signal; an ultrasonic emitter for emitting the signal generated by the adding unit, and an ultrasonic emitter arranged on the central axis of the ultrasonic emitter and ahead of the emitting surface of the ultrasonic emitter, for emitting the carrier wave signal generated by the carrier wave generating unit in the same direction as the emitting direction of the ultrasonic emitter are included, wherein the phase of the carrier wave signal emitted by the ultrasonic emitter is opposite to that of the carrier wave signal included in the signal emitted by the ultrasonic emitter.

Abstract: There are included a carrier wave generating unit (4) that generates a carrier wave signal; a modulating unit (6) that generates a modulated wave signal obtained by amplitude-modulating the carrier wave signal generated by the carrier wave generating unit (4) using an audio signal; an absolute value converting unit (7) that converts the audio signal into an absolute value; an exponentially weighted moving average unit (8) that performs an exponentially weighted moving average process on the audio signal converted by the absolute value converting unit (7), using an audio signal obtained one sampling period ago, to estimate a sound pressure level of the audio signal; and a multiplying unit (10) that multiplies the carrier wave signal generated by the carrier wave generating unit (4) by the sound pressure level estimated by the exponentially weighted moving average unit (8).

Abstract: A carrier wave generating unit for generating a carrier wave signal; a modulating unit for generating a modulated wave signal by performing amplitude modulation on the carrier wave signal generated by the carrier wave generating unit with an audio signal; an adding unit for adding the carrier wave signal generated by the carrier wave generating unit and the modulated wave signal generated by the modulating unit to generate a signal; an ultrasonic emitter for emitting the signal generated by the adding unit, and an ultrasonic emitter arranged on the central axis of the ultrasonic emitter and ahead of the emitting surface of the ultrasonic emitter, for emitting the carrier wave signal generated by the carrier wave generating unit in the same direction as the emitting direction of the ultrasonic emitter are included, wherein the phase of the carrier wave signal emitted by the ultrasonic emitter is opposite to that of the carrier wave signal included in the signal emitted by the ultrasonic emitter.

Abstract: A nitride semiconductor structure includes: a plurality of crystal growth seed regions formed of a nitride semiconductor, of which the principal surface is an m-plane and which extends to a range that defines an angle of not less than 0 degrees and not more than 10 degrees with respect to an a-axis; and a laterally grown region formed of a nitride semiconductor which has extended in a c-axis direction from each of the plurality of crystal growth seed regions. An S width that is the spacing between adjacent ones of the plurality of crystal growth seed regions is at least 20 ?m.

Abstract: A nitride semiconductor light emitting element includes a light emitting layer. The light emitting layer includes an InxGa1-xN well layer (0<x?1) having a principal surface that is an m-plane. A profile in a depth direction (depth profile) of an In composition ratio x in the InxGa1-xN well layer has a plurality of peaks. Values of the In composition ratios x at the respective plurality of peaks are different from one another.

Abstract: In a gallium nitride based compound semiconductor light-emitting element including an active layer, the active layer includes a well layer 104 and a barrier layer 103, each of which is a semiconductor layer of which the growing plane is an m plane. The well layer 104 has a lower surface and an upper surface and has an In composition distribution in which the composition of In changes according to a distance from the lower surface in a thickness direction of the well layer 104. The In composition of the well layer 104 becomes a local minimum at a level that is defined by a certain distance from the lower surface and that portion of the well layer 104 where the In composition becomes the local minimum runs parallel to the lower surface.

Abstract: A nitride semiconductor light-emitting element uses a non-polar plane as its growing plane. A GaN/InGaN multi-quantum well active layer includes an Si-doped layer which is arranged in an InyGa1-yN (where 0<y<1) well layer, between the InyGa1-yN (where 0<y<1) well layer and a GaN barrier layer, or in a region of the GaN barrier layer that is located closer to the InyGa1-yN (where 0<y<1) well layer. A concentration of Si at one interface of the GaN barrier layer on a growing direction side is either zero or lower than a concentration of Si in the Si-doped layer.

Abstract: A nitride semiconductor structure includes: a plurality of crystal growth seed regions formed of a nitride semiconductor, of which the principal surface is an m-plane and which extends to a range that defines an angle of not less than 0 degrees and not more than 10 degrees with respect to an a-axis; and a laterally grown region formed of a nitride semiconductor which has extended in a c-axis direction from each of the plurality of crystal growth seed regions. An S width that is the spacing between adjacent ones of the plurality of crystal growth seed regions is at least 20 ?m.

Abstract: An apparatus for cutting a workpiece as biospecimen into a section while maintaining living state of cells includes a board on which the workpiece is placed, a device for freezing and fixing the workpiece on the board, and a blade for cutting the frozen workpiece fixed on the board into a section by means of rotary movement in a predetermined rotational direction. A profile of a cutting edge of the blade is a curve showing monotonic increase in distances of a rotational axis to points starting at a nearest point that is the shortest from the axis and ending at a farthest point that is the longest from the axis. The farthest point is behind the nearest point in the rotational direction and the curve is convex opposite to the rotational axis with respect to a straight line connecting the nearest point and the farthest point.

Abstract: A gallium nitride-based compound semiconductor light-emitting device formed of nitride semiconductor expressed by a general expression AlxInyGazN, where 0?x<1, 0<y<1, 0<z<1, and x+y+z=1. The device includes a light-emitting layer having a growth surface of a non-polar plane or a semi-polar plane. A growth surface of the nitride semiconductor has two anisotropic axes. An In composition of the nitride semiconductor has distribution changing along a first axis of the two axes. An interface between a region with a low In composition and a region with a high In composition is inclined from a plane perpendicular to the first axis toward the growth surface of the nitride semiconductor.

Abstract: A nitride semiconductor light-emitting element uses a non-polar plane as its growing plane. A GaN/InGaN multi-quantum well active layer includes an Si-doped layer which is arranged in an InyGa1-yN (where 0<y<1) well layer, between the InyGa1-yN (where 0<y<1) well layer and a GaN barrier layer, or in a region of the GaN barrier layer that is located closer to the InyGa1-yN (where 0<y<1) well layer. A concentration of Si at one interface of the GaN barrier layer on a growing direction side is either zero or lower than a concentration of Si in the Si-doped layer.

Abstract: A nitride semiconductor light emitting element includes a light emitting layer. The light emitting layer includes an InxGa1-xN well layer (0<x?1) having a principal surface that is an m-plane. A profile in a depth direction (depth profile) of an In composition ratio x in the InxGa1-xN well layer has a plurality of peaks. Values of the In composition ratios x at the respective plurality of peaks are different from one another.

Abstract: A nitride-based semiconductor light-emitting element includes an n-GaN layer 102, a p-GaN layer 107, and a GaN/InGaN multi-quantum well active layer 105, which is interposed between the n- and p-GaN layers 102 and 107. The GaN/InGaN multi-quantum well active layer 105 is an m-plane semiconductor layer, which includes an InxGa1-xN (where 0<x<1) well layer 104 that has a thickness of 6 nm or more and 17 nm or less, and oxygen atoms included in the GaN/InGaN multi-quantum well active layer 105 have a concentration of 3.0×1017 cm?3 or less.

Abstract: A gallium nitride based compound semiconductor light-emitting element according to an embodiment of the present disclosure includes: an n-type gallium nitride based compound semiconductor layer; a p-type gallium nitride based compound semiconductor layer; and an active layer which is arranged between the n- and p-type gallium nitride based compound semiconductor layers. The active layer and the p-type gallium nitride based compound semiconductor layer are m-plane semiconductor layers. The p-type gallium nitride based compound semiconductor layer includes magnesium at a concentration of 2.0×1018 cm?3 to 2.5×1019 cm?3 and oxygen, of which the concentration is 5% to 15% of the concentration of the magnesium.

Abstract: An electromagnetic converter includes a magnetic circuit having permanent magnets, a lower frame for fixing magnetic pole faces of these permanent magnets thereto, an upper frame having an opening formed therein on a side of the other magnetic pole faces of the permanent magnets and plates fixed to the other magnetic pole faces, and a diaphragm having a voice coil pattern arranged on side portions thereof in a direction of the length thereof and on a top portion thereof in a direction of the width thereof. Protruding portions join between these side portions. The periphery of the top portion is joined to the periphery of the opening of the upper frame via an upper gasket. A flange at the edges of the four side portions is joined to an inner surface of the upper frame, i.e., an inner portion of the magnetic circuit via a lower gasket.

Abstract: A nitride-based semiconductor light-emitting element includes an n-GaN layer 102, a p-GaN layer 107, and a GaN/InGaN multi-quantum well active layer 105, which is interposed between the n- and p-GaN layers 102 and 107. The GaN/InGaN multi-quantum well active layer 105 is an m-plane semiconductor layer, which includes an InxGa1-xN (where 0<x<1) well layer 104 that has a thickness of 6 nm or more and 17 nm or less, and oxygen atoms included in the GaN/InGaN multi-quantum well active layer 105 have a concentration of 3.0×1017 cm?3 or less.

Abstract: InyGa1-yN (0<y<1) layers whose principal surface is a non-polar plane or a semi-polar plane are formed by an MOCVD under different growth conditions. Then, the relationship between the growth temperature and the In supply mole fraction in a case where the pressure and the growth rate are constant is determined based on a growth condition employed for formation of InxGa1-xN (0<x<1) layers whose emission wavelengths are equal among the InyGa1-yN layers. Then, a saturation point is determined on a curve representing the relationship between the growth temperature and the In supply mole fraction, the saturation point being between a region where the growth temperature monotonically increases according to an increase of the In supply mole fraction and a region where the growth temperature saturates. Under a growth condition corresponding to this saturation point, an InxGa1-xN layer is grown.

Abstract: InyGa1-yN (0<y<1) layers whose principal surface is a non-polar plane or a semi-polar plane are formed by an MOCVD under different growth conditions. Then, the relationship between the growth temperature and the In supply mole fraction in a case where the pressure and the growth rate are constant is determined based on a growth condition employed for formation of InxGa1-xN (0<x<1) layers whose emission wavelengths are equal among the InyGa1-yN layers. Then, a saturation point is determined on a curve representing the relationship between the growth temperature and the In supply mole fraction, the saturation point being between a region where the growth temperature monotonically increases according to an increase of the In supply mole fraction and a region where the growth temperature saturates. Under a growth condition corresponding to this saturation point, an InxGa1-xN layer is grown.

Abstract: An electromagnetic converter includes a magnetic circuit having permanent magnets, a lower frame for fixing magnetic pole faces of these permanent magnets thereto, an upper frame having an opening formed therein on a side of the other magnetic pole faces of the permanent magnets and plates fixed to the other magnetic pole faces, and a diaphragm having a voice coil pattern arranged on side portions thereof in a direction of the length thereof and on a top portion thereof in a direction of the width thereof. Protruding portions join between these side portions. The periphery of the top portion is joined to the periphery of the opening of the upper frame via an upper gasket. A flange at the edges of the four side portions is joined to an inner surface of the upper frame, i.e., an inner portion of the magnetic circuit via a lower gasket.