Abstract: A semiconductor device of an embodiment includes first and second electrodes, a first gate electrode, a semiconductor layer disposed between the first electrode and a band gap of the semiconductor layer being wider than a band gap of silicon, a silicon layer between the semiconductor layer and the first electrode, a metal layer between the semiconductor layer and the silicon layer, a first semiconductor region of a first-conductivity type in the semiconductor layer, a first silicon region of the first-conductivity type in the silicon layer, a second silicon region of a second-conductivity type in the first silicon region, a third silicon region of the second-conductivity type in the first silicon region and separated from the second silicon region, a first gate insulating layer, a fourth silicon region of the first-conductivity type in the second silicon region, and a fifth silicon region in the third silicon region.

Abstract: A semiconductor device of an embodiment includes first and second electrodes, a first gate electrode, a semiconductor layer disposed between the first electrode and a band gap of the semiconductor layer being wider than a band gap of silicon, a silicon layer between the semiconductor layer and the first electrode, a metal layer between the semiconductor layer and the silicon layer, a first semiconductor region of a first-conductivity type in the semiconductor layer, a first silicon region of the first-conductivity type in the silicon layer, a second silicon region of a second-conductivity type in the first silicon region, a third silicon region of the second-conductivity type in the first silicon region and separated from the second silicon region, a first gate insulating layer, a fourth silicon region of the first-conductivity type in the second silicon region, and a fifth silicon region in the third silicon region.

Abstract: According to one embodiment, a semiconductor light emitting element includes a base body, first to sixth semiconductor layers, a first conductive layer, and a first pad layer. The first semiconductor layer is separated from the base body and includes first and second semiconductor regions arranged with each other. The second semiconductor layer is provided between the second semiconductor region and the base body. The third semiconductor layer is provided between the second semiconductor region and the second semiconductor layer. The fourth semiconductor layer is separated from the base body, arranged with the first semiconductor layer. The fifth semiconductor layer is provided between the base body and one portion of the fourth semiconductor layer. The sixth semiconductor layer is provided between the fifth semiconductor layer and the one portion. The first conductive layer includes first, second, and third conductive regions. The first pad layer includes a first pad region.

Abstract: According to one embodiment, a semiconductor light emitting element includes a base body, first to sixth semiconductor layers, a first conductive layer, and a first pad layer. The first semiconductor layer is separated from the base body and includes first and second semiconductor regions arranged with each other. The second semiconductor layer is provided between the second semiconductor region and the base body. The third semiconductor layer is provided between the second semiconductor region and the second semiconductor layer. The fourth semiconductor layer is separated from the base body, arranged with the first semiconductor layer. The fifth semiconductor layer is provided between the base body and one portion of the fourth semiconductor layer. The sixth semiconductor layer is provided between the fifth semiconductor layer and the one portion. The first conductive layer includes first, second, and third conductive regions. The first pad layer includes a first pad region.