Patents by Inventor Shunsuke Fukami

Shunsuke Fukami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210005808
    Abstract: Provided is an X-type 3-terminal STT-MRAM (spin orbital torque magnetization reversal component) having a high thermal stability index ? and a low writing current Ic in a balanced manner. A magnetoresistance effect element has a configuration of channel layer (1)/barrier layer non adjacent magnetic layer (2b)/barrier layer adjacent magnetic layer (2a)/barrier layer (3).
    Type: Application
    Filed: December 14, 2018
    Publication date: January 7, 2021
    Inventors: Hideo SATO, Shinya ISHIKAWA, Shunsuke FUKAMI, Hideo OHNO, Tetsuo ENDOH
  • Publication number: 20200286536
    Abstract: The magnetic memory element (100) includes: a conductive layer that includes a heavy metal layer (10) containing a 5d transition metal; a first ferromagnetic layer (20) that is adjacent to the conductive layer and contains a ferromagnetic layer having a reversible magnetization; a barrier layer (30) that is adjacent to the first ferromagnetic layer (20) and includes an insulating material; a reference layer (40) that is adjacent to the barrier layer (30) and has at least one second ferromagnetic layer (41) having a fixed magnetization direction; a cap layer (50) that is adjacent to the reference layer (40) and includes a conductive material; a first terminal (T1) that is capable of introducing a current into one end of the heavy metal layer (10) in the longitudinal direction; a second terminal (T2) that is capable of introducing a current into the other end of the heavy metal layer (10) in the longitudinal direction; and a third terminal (T3) that is capable of introducing a current into the cap layer (50).
    Type: Application
    Filed: March 21, 2017
    Publication date: September 10, 2020
    Inventors: Shunsuke FUKAMI, Chaoliang ZHANG, Ayato OHKAWARA, Kyota WATANABE, Hideo OHNO, Tetsuo ENDOH
  • Patent number: 10706996
    Abstract: A magnetic material includes a structure in which a first magnetic layer 1 and a second magnetic layer 2 are stacked such that each layer is formed at least partially in a stacking direction by substantially one atomic layer. The first magnetic layer contains Co as a principal component. The second magnetic layer includes at least Ni. The magnetic material has magnetic anisotropy in the stacking direction. Preferably, an atomic arrangement within a film surface of the first magnetic layer and the second magnetic layer has six-fold symmetry.
    Type: Grant
    Filed: November 11, 2013
    Date of Patent: July 7, 2020
    Assignee: TOHOKU UNIVERSITY
    Inventors: Shunsuke Fukami, Hideo Sato, Michihiko Yamanouchi, Shoji Ikeda, Hideo Ohno
  • Patent number: 10658572
    Abstract: A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface of the layers. An atomic fraction of all magnetic elements to all magnetic and non-magnetic elements included in the second magnetic layer is smaller than that of the first magnetic layer.
    Type: Grant
    Filed: November 2, 2018
    Date of Patent: May 19, 2020
    Assignee: TOHOKU UNIVERSITY
    Inventors: Hideo Sato, Shoji Ikeda, Mathias Bersweiler, Hiroaki Honjo, Kyota Watanabe, Shunsuke Fukami, Fumihiro Matsukura, Kenchi Ito, Masaaki Niwa, Tetsuo Endoh, Hideo Ohno
  • Patent number: 10622550
    Abstract: A magnetoresistance effect element includes a bias layer comprised of an antiferromagnetic material and having a shape in which a first length in a first direction greater than a second length in a second direction perpendicular to the first direction, a recording layer comprised of a ferromagnetic material and being disposed on the bias layer, a direction of magnetization of the recording layer being reversible, a barrier layer comprised of an insulation material and being disposed on the recording layer, and a reference layer comprised of a ferromagnetic material and being disposed on the barrier layer, a direction of magnetization of the reference layer being substantially fixed.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: April 14, 2020
    Assignee: TOHOKU UNIVERSITY
    Inventors: Shunsuke Fukami, Hideo Ohno, Tetsuo Endoh
  • Patent number: 10410703
    Abstract: A magnetoresistance effect element includes a recording layer containing a ferromagnetic body, and including a first fixed and second magnetization regions having magnetization components fixed substantially in a direction antiparallel to the in-plane direction to each other, and a free magnetization region disposed between the first and second fixed magnetization regions and having a magnetization component invertible in the in-plane direction, a domain wall disposed between the first fixed magnetization region and the free magnetization region, and being movable within the free magnetization region, and a magnetic nanowire having a width of 40 nm or less. The thickness of the recording layer is 40 nm or less and at least half but no more than twofold the width of the magnetic nanowire. The element further includes a barrier layer disposed on the recording layer, and a reference layer disposed on the barrier layer and containing a ferromagnetic body.
    Type: Grant
    Filed: November 13, 2017
    Date of Patent: September 10, 2019
    Assignee: TOHOKU UNIVERSITY
    Inventors: Shunsuke Fukami, Toru Iwabuchi, Hideo Ohno, Tetsuo Endoh
  • Publication number: 20190243039
    Abstract: A structure includes: a near infrared transmitting filter that shields light in a visible range and allows transmission of at least a part of light in a near infrared range; and a member that is provided on an optical path of the near infrared transmitting filter on at least one of an incidence side into the near infrared transmitting filter or an emission side from the near infrared transmitting filter, allows transmission of light in a near infrared range, and has a refractive index of 1.7 or higher for the light in the near infrared range.
    Type: Application
    Filed: April 16, 2019
    Publication date: August 8, 2019
    Applicant: FUJIFILM Corporation
    Inventors: Hirotaka TAKISHITA, Yutaro FUKAMI, Kyohei ARAYAMA, Hiroaki IDEI, Michihiro OGAWA, Yushi KANEKO, Shunsuke KITAJIMA
  • Patent number: 10263180
    Abstract: A magnetoresistance effect element includes a reference layer made of a ferromagnetic material, a recording layer made of a ferromagnetic material, and a barrier layer disposed between the reference layer and the recording layer. The reference layer and the recording layer have an in-plane magnetization direction parallel to a surface of the layers. The recording layer has a shape that has short axis and long axis perpendicular to the short axis in plan view. A first value obtained by dividing a thickness of the recording layer by a length of the short axis of the recording layer is greater than 0.3 and smaller than 1.
    Type: Grant
    Filed: July 22, 2017
    Date of Patent: April 16, 2019
    Assignee: TOHOKU UNIVERSITY
    Inventors: Hideo Sato, Shinya Ishikawa, Shunsuke Fukami, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno, Tetsuo Endoh
  • Publication number: 20190074433
    Abstract: A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface of the layers. An atomic fraction of all magnetic elements to all magnetic and non-magnetic elements included in the second magnetic layer is smaller than that of the first magnetic layer.
    Type: Application
    Filed: November 2, 2018
    Publication date: March 7, 2019
    Applicant: TOHOKU UNIVERSITY
    Inventors: Hideo SATO, Shoji IKEDA, Mathias BERSWEILER, Hiroaki HONJO, Kyota WATANABE, Shunsuke FUKAMI, Fumihiro MATSUKURA, Kenchi ITO, Masaaki NIWA, Tetsuo ENDOH, Hideo OHNO
  • Publication number: 20190019944
    Abstract: A magnetic tunnel junction element (10) includes a configuration in which a reference layer (14) that includes a ferromagnetic material, a barrier layer (15) that includes O, a recording layer (16) that includes a ferromagnetic material including Co or Fe, a first protective layer (17) that includes O, and a second protective layer (18) that includes at least one of Pt, Ru, Co, Fe, CoB, FeB, or CoFeB are layered.
    Type: Application
    Filed: November 18, 2016
    Publication date: January 17, 2019
    Inventors: Hideo Sato, Yoshihisa Horikawa, Shunsuke Fukami, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno, Tetsuo Endoh, Hiroaki Honjo
  • Patent number: 10164174
    Abstract: A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface if the layers. The second magnetic layer has a saturation magnetization lower than that of the first magnetic layer, and an interfacial magnetic anisotropy energy density (Ki) at the interface between the first magnetic layer and the first non-magnetic layer is greater than that of an interface between the first non-magnetic layer and second magnetic layers if being disposed adjacent each other.
    Type: Grant
    Filed: January 16, 2018
    Date of Patent: December 25, 2018
    Assignee: TOHOKU UNIVERSITY
    Inventors: Hideo Sato, Shoji Ikeda, Mathias Bersweiler, Hiroaki Honjo, Kyota Watanabe, Shunsuke Fukami, Fumihiro Matsukura, Kenchi Ito, Masaaki Niwa, Tetsuo Endoh, Hideo Ohno
  • Patent number: 10020039
    Abstract: A magnetoresistive device includes a magnetic free layer having first and second surfaces, the magnetic free layer being comprised of a ferromagnetic material having a perpendicular magnetic anisotropy, a spin current generation layer contacting the first surface of the magnetic free layer, a tunnel barrier layer having one surface contacting the second surface of the magnetic free layer, a reference layer contacting another surface of the tunnel barrier layer, and a leakage field generation layer including first and second leakage field generation layers each of which is comprised of a ferromagnetic material and generates a leakage field, an in-plane component of the leakage field at an part of the magnetic free layer is formed generating a domain wall having an in-plane magnetization component in the magnetic free layer.
    Type: Grant
    Filed: May 2, 2016
    Date of Patent: July 10, 2018
    Assignee: TOHOKU UNIVERSITY
    Inventors: Shunsuke Fukami, Michihiko Yamanouchi, Hideo Ohno
  • Publication number: 20180175286
    Abstract: A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface if the layers. The second magnetic layer has a saturation magnetization lower than that of the first magnetic layer, and an interfacial magnetic anisotropy energy density (Ki) at the interface between the first magnetic layer and the first non-magnetic layer is greater than that of an interface between the first non-magnetic layer and second magnetic layers if being disposed adjacent each other.
    Type: Application
    Filed: January 16, 2018
    Publication date: June 21, 2018
    Applicant: TOHOKU UNIVERSITY
    Inventors: Hideo SATO, Shoji IKEDA, Mathias BERSWEILER, Hiroaki HONJO, Kyota WATANABE, Shunsuke FUKAMI, Fumihiro MATSUKURA, Kenchi ITO, Masaaki NIWA, Tetsuo ENDOH, Hideo OHNO
  • Publication number: 20180108390
    Abstract: A magnetoresistance effect element includes a recording layer containing a ferromagnetic body, and including a first fixed and second magnetization regions having magnetization components fixed substantially in a direction antiparallel to the in-plane direction to each other, and a free magnetization region disposed between the first and second fixed magnetization regions and having a magnetization component invertible in the in-plane direction, a domain wall disposed between the first fixed magnetization region and the free magnetization region, and being movable within the free magnetization region, and a magnetic nanowire having a width of 40 nm or less. The thickness of the recording layer is 40 nm or less and at least half but no more than twofold the width of the magnetic nanowire. The element further includes a barrier layer disposed on the recording layer, and a reference layer disposed on the barrier layer and containing a ferromagnetic body.
    Type: Application
    Filed: November 13, 2017
    Publication date: April 19, 2018
    Applicant: TOHOKU UNIVERSITY
    Inventors: Shunsuke FUKAMI, Toru IWABUCHI, Hideo OHNO, Tetsuo ENDOH
  • Patent number: 9941468
    Abstract: A magnetoresistance effect element (100) includes a heavy metal layer (11) that includes a heavy metal and that is formed to extend in a first direction, a recording layer (12) that includes a ferromagnetic material and that is provided adjacent to the heavy metal layer (11), a barrier layer (13) that includes an insulating material and that is provided on the recording layer (12) with being adjacent to a surface of the recording layer (12) opposite to the heavy metal layer (11), and a reference layer (14) that includes a ferromagnetic material and that is provided adjacent to a surface of the barrier layer (13), the surface being opposite to the recording layer (12). The direction of the magnetization of the reference layer (14) has a component substantially fixed in the first direction, and the direction of the magnetization of the recording layer (12) has a component variable in the first direction.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: April 10, 2018
    Assignee: Tohoku University
    Inventors: Shunsuke Fukami, Chaoling Zhang, Tetsuro Anekawa, Hideo Ohno, Tetsuo Endoh
  • Publication number: 20180019388
    Abstract: A magnetoresistance effect element includes a bias layer comprised of an antiferromagnetic material and having a shape in which a first length in a first direction greater than a second length in a second direction perpendicular to the first direction, a recording layer comprised of a ferromagnetic material and being disposed on the bias layer, a direction of magnetization of the recording layer being reversible, a barrier layer comprised of an insulation material and being disposed on the recording layer, and a reference layer comprised of a ferromagnetic material and being disposed on the barrier layer, a direction of magnetization of the reference layer being substantially fixed.
    Type: Application
    Filed: September 28, 2017
    Publication date: January 18, 2018
    Applicant: TOHOKU UNIVERSITY
    Inventors: Shunsuke FUKAMI, Hideo OHNO, Tetsuo ENDOH
  • Publication number: 20170324030
    Abstract: A magnetoresistance effect element includes a reference layer made of a ferromagnetic material, a recording layer made of a ferromagnetic material, and a barrier layer disposed between the reference layer and the recording layer. The reference layer and the recording layer have an in-plane magnetization direction parallel to a surface of the layers. The recording layer has a shape that has short axis and long axis perpendicular to the short axis in plan view. A first value obtained by dividing a thickness of the recording layer by a length of the short axis of the recording layer is greater than 0.3 and smaller than 1.
    Type: Application
    Filed: July 22, 2017
    Publication date: November 9, 2017
    Applicant: TOHOKU UNIVERSITY
    Inventors: Hideo SATO, Shinya ISHIKAWA, Shunsuke FUKAMI, Shoji IKEDA, Fumihiro MATSUKURA, Hideo OHNO, Tetsuo ENDOH
  • Patent number: 9799822
    Abstract: A disclosed magnetic memory element includes: a magnetization free layer formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a response layer provided so as to be opposed to the magnetization free layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a non-magnetic layer provided so as to be opposed to the response layer on a side opposite to the magnetization free layer and formed of a non-magnetic substance; and a reference layer provided so as to be opposed to the non-magnetic layer on a side opposite to the response layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy. The magnetization free layer includes a first magnetization fixed region and a second magnetization fixed region which have magnetization fixed in directions antiparallel to each other, and a magnetization free region in which a magnetization direction is variable.
    Type: Grant
    Filed: April 19, 2012
    Date of Patent: October 24, 2017
    Assignees: NEC CORPORATION, TOHOKU UNIVERSITY
    Inventors: Shunsuke Fukami, Nobuyuki Ishiwata, Tadahiko Sugibayashi, Hideo Ohno, Shoji Ikeda, Michihiko Yamanouchi
  • Publication number: 20170222135
    Abstract: A magnetoresistance effect element (100) includes a heavy metal layer (11) that includes a heavy metal and that is formed to extend in a first direction, a recording layer (12) that includes a ferromagnetic material and that is provided adjacent to the heavy metal layer (11), a barrier layer (13) that includes an insulating material and that is provided on the recording layer (12) with being adjacent to a surface of the recording layer (12) opposite to the heavy metal layer (11), and a reference layer (14) that includes a ferromagnetic material and that is provided adjacent to a surface of the barrier layer (13), the surface being opposite to the recording layer (12). The direction of the magnetization of the reference layer (14) has a component substantially fixed in the first direction, and the direction of the magnetization of the recording layer (12) has a component variable in the first direction.
    Type: Application
    Filed: July 29, 2015
    Publication date: August 3, 2017
    Inventors: Shunsuke Fukami, Chaoling Zhang, Tetsuro Anekawa, Hideo Ohno, Tetsuo Endoh
  • Patent number: 9577182
    Abstract: A magnetoresistance effect element and a magnetic memory having thermal stability expressed by a thermal stability factor of 70 or more even with a fine junction size. The magnetoresistance effect element includes a first magnetic layer of an invariable magnetization direction forming a reference layer, a second magnetic layer of a variable magnetization direction forming a recording layer, and a first non-magnetic layer disposed between the first and second magnetic layers in a thickness direction of the first and second magnetic layers. At least one of the first and second magnetic layers has the following relationship between D (nm) and t (nm): D<0.9t+13, where D is a junction size corresponding to the length of a longest straight line on an end surface perpendicular to the thickness direction, and t is a layer thickness. The junction size is 30 nm or less.
    Type: Grant
    Filed: October 20, 2014
    Date of Patent: February 21, 2017
    Assignee: TOHOKU UNIVERSITY
    Inventors: Shoji Ikeda, Hideo Sato, Shunsuke Fukami, Michihiko Yamanouchi, Fumihiro Matsukura, Hideo Ohno, Shinya Ishikawa