Abstract: A domain wall motion type MRAM has: a magnetic recording layer 10 having perpendicular magnetic anisotropy; and a pair of terminals 51 and 52 used for supplying a current to the magnetic recording layer 10. The magnetic recording layer 10 has: a first magnetization region 11 connected to one of the pair of terminals; a second magnetization region 12 connected to the other of the pair of terminals; and a magnetization switching region 13 connecting between the first magnetization region 11 and the second magnetization region 12 and having reversible magnetization. A first pinning site PS1, by which the domain wall is trapped, is formed at a boundary between the first magnetization region 11 and the magnetization switching region 13. A second pinning site PS2, by which the domain wall is trapped, is formed at a boundary between the second magnetization region 12 and the magnetization switching region 13.

Abstract: A magnetoresistive element is provided with a first magnetization free layer; a second magnetization free layer; a non-magnetic layer disposed adjacent to the second magnetization free layer; and a first magnetization fixed layer disposed adjacent to the second magnetization free layer on an opposite side of the second magnetization free layer. The first magnetization free layer is formed of ferromagnetic material and has a magnetic anisotropy in a thickness direction. On the other hand, the second magnetization free layer and the first magnetization fixed layer are formed of ferromagnetic material and have a magnetic anisotropy in an in-plane direction. The first magnetization free layer includes: a first magnetization fixed region having a fixed magnetization; a second magnetization fixed region having a fixed magnetization; and a magnetization free region connected to the first and second magnetization fixed regions and having a reversible magnetization.

Abstract: An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization fixed layer, a first magnetization free layer, a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the first magnetization free layer, a second magnetization fixed layer, a second magnetization free layer and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the second magnetization free layer. The first magnetization fixed layer and the first magnetization free layer have perpendicular magnetic anisotropy, and the second magnetization fixed layer and the second magnetization free layer have in-plane magnetic anisotropy. The first magnetization free layer and the second magnetization free layer are magnetically coupled to each other.

Abstract: A magnetoresistance effect element comprising: a first magnetization fixed layer whose magnetization direction is fixed; a first magnetization free layer whose magnetization direction is variable; a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the first magnetization free layer; a second magnetization fixed layer whose magnetization direction is fixed; a second magnetization free layer whose magnetization direction is variable; and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the second magnetization free layer. The first magnetization fixed layer and the first magnetization free layer have perpendicular magnetic anisotropy, while the second magnetization fixed layer and the second magnetization free layer have in-plane magnetic anisotropy. The first magnetization free layer and the second magnetization free layer are magnetically coupled to each other.

Abstract: An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization free layer, a first magnetization fixed layer, a second magnetization free layer and a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the second magnetization free layer. The first magnetization free layer has: first and second magnetization fixed regions; and a magnetization free region. The magnetization free region and the second magnetization free layer are magnetically coupled to each other.

Abstract: A domain wall motion type MRAM 100 has: a magnetic recording layer 10 that is a ferromagnetic layer; and a magnetic coupling layer 20 that is a ferromagnetic layer whose magnetization direction is fixed. The magnetic recording layer 10 has: a first region 10-1; a second region 10-2; and a magnetization switching region 10-3 connecting between the first region 10-1 and the second region 10-2. The first region 10-1 is magnetically coupled to the magnetic coupling layer 20 and its magnetization direction is fixed in a first direction by the magnetic coupling layer 20. The second region 10-2 is not magnetically coupled to the magnetic coupling layer 20 and its magnetization direction is a second direction that is opposite to the first direction.

Abstract: A semiconductor device includes: a first magnetic random access memory including a first memory cell and a second magnetic random access memory including a second memory cell operating at higher speed than the first memory cell and is provided on the same chip together with the first magnetic random access memory. The first memory cell is a current-induced domain wall motion type MRAM and stores data based on a domain wall position of a magnetization free layer. A layer that a write current flows is different from a layer that a read current flows. The second memory cell is a current-induced magnetic field writing type MRAM and stores data based on a magnetic field induced by a write current.

Abstract: A magnetoresistive effect element includes: a magnetization free layer; a non-magnetic insertion layer provided adjacent to the magnetization free layer; a magnetic insertion layer provided adjacent to the non-magnetic insertion layer and opposite to the magnetization free layer with respect to the non-magnetic insertion layer; a spacer layer provided adjacent to the magnetic insertion layer and opposite to the non-magnetic insertion layer with respect to the magnetic insertion layer; and a first magnetization fixed layer provided adjacent to the spacer layer and opposite to the magnetic insertion layer with respect to the spacer layer. The magnetization free layer and the first magnetization fixed layer have magnetization components in directions approximately perpendicular to a film surface. The magnetization free layer includes two magnetization fixed portions and a domain wall motion portion arranged between the two magnetization fixed portions.

Abstract: A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; and a non-magnetic layer provided between the second magnetization free layer and the reference layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region, and of which magnetization can be switched. The second magnetization free layer is included in the first magnetization free layer in a plane parallel to a substrate.

Abstract: A non-volatile logic circuit includes an input section, a control section and an output section. The input section has perpendicular magnetic anisotropy and has a ferromagnetic layer whose magnetization state is changeable. The control section includes a ferromagnetic layer. The output section is provided in a neighborhood of the input section and the control section and includes a magnetic tunnel junction element whose magnetization state is changeable. The magnetization state of the input section is changed based on the magnetization state. A magnetization state of the magnetic tunnel junction element of the output section which state is changed based on the magnetization state of the ferromagnetic material of the control section and the magnetization state of the ferromagnetic material of the input section.

Abstract: A magnetic memory cell includes: a magnetization recording layer; and a magnetic tunneling junction section. The magnetization recording layer includes a ferromagnetic layer with perpendicular magnetic anisotropy. The magnetic tunneling junction section is used for reading information in the magnetization recording layer. The magnetization recording layer includes two domain wall moving areas.

Abstract: A magnetic memory cell is provided with a magnetization record layer and a magnetic tunnel junction section. The magnetization record layer is a ferromagnetic layer having a perpendicular magnetic anisotropy. The magnetic tunnel junction section is used to read data from the magnetization record layer. The magnetization record layer has a plurality of domain wall motion regions.

Abstract: A magnetic random access memory includes: a magnetic recording layer including a ferromagnetic layer and having perpendicular magnetic anisotropy; and a magnetic reading layer provided on the magnetic recording layer and used for reading information. The magnetic recording layer includes: a magnetization switching area having reversible magnetization; a first magnetization pinned area connected to a first boundary of the magnetization switching area and having magnetization whose direction is pinned in a first direction; and a second magnetization pinned area connected to a second boundary of the magnetization switching area and having magnetization whose direction is pinned in a second direction. The magnetic reading layer includes: a magnetic sensing layer whose direction of magnetization changes based on a direction of the magnetization of the magnetization switching area; a nonmagnetic barrier layer provided on the magnetic sensing layer; and a pinned layer provided on the nonmagnetic barrier layer.

Abstract: A magnetic random access memory has a laminating structure including: a magnetization free layer; an insulating layer; and a magnetization fixed layer. The magnetization free layer includes: a sense layer; a first bonding layer being adjacent to the sense layer; and a storage layer being adjacent to the first bonding layer on an opposite side to the sense layer. At least a part of the sense layer and the storage layer is magnetically coupled to one another through the first bonding layer. A magnetic anisotropy of the storage layer is larger than that of the sense layer. A product of a saturation magnetization and a volume of the sense layer is larger than that of the storage layer. According to such a structure, a magnetic random access memory can be provided in which a current for writing is reduced while enough thermal stability is maintained.

Abstract: An initialization method is provided for a magnetic memory element including: a data recording layer having perpendicular magnetic anisotropy which includes: a first magnetization fixed region, a second magnetization fixed region, and a magnetization free region coupled to the first magnetization fixed region and the second magnetization fixed region, the data recording layer being structure so that the coercive force of the first magnetization fixed region being different from that of the second magnetization fixed region. The initialization method includes steps of: directing the magnetizations of the first magnetization fixed region, the second magnetization fixed region and the magnetization free region in the same direction; and applying a magnetic field having both components perpendicular to and parallel to the magnetic anisotropy of the data recording layer to the data recording layer.

Abstract: A magnetoresistance element is provided with: a magnetization recording layer that is a ferromagnetic layer. The magnetization recording layer includes: a magnetization reversal region having a reversible magnetization; a first magnetization fixed region connected to a first boundary of the magnetization reversal region and having a magnetization direction fixed in a first direction; and a second magnetization fixed region connected to a second boundary of the magnetization reversal region and having a magnetization direction fixed in a second direction. At least one magnetization reversal facilitation structure which is a structure in which a magnetization is reversed more easily than the remaining portion is provided for a portion of the second magnetization fixed region.

Abstract: A magnetic memory according to the present invention has: a first underlayer; a second underlayer so formed on the first underlayer as to be in contact with the first underlayer; and a data storage layer so formed on the second underlayer as to be in contact with the second underlayer. The data storage layer is made of a ferromagnetic material having perpendicular magnetic anisotropy. A magnetization state of the data storage layer is changed by current driven domain wall motion.

Abstract: A magnetic memory includes a magnetization recording layer, a first terminal, a second terminal, a magnetization pinned layer and a non-magnetic layer. The magnetization recording layer has a vertical magnetic anisotropy and includes a ferromagnetic layer. The first terminal is connected to one end of a first region in the magnetization recording layer. The second terminal is connected to the other end of the first region. The non-magnetic layer is arranged on the first region. The magnetization pinned layer is arranged on the non-magnetic layer and is located on the side opposite to the first region. The magnetization recording layer includes: a first extension portion located outside the first terminal in the magnetization recording layer; and a property changing structure that is arranged in the first extension portion and substantially changes a magnetization switching property of the magnetization recording layer.

Abstract: A domain wall motion element has a magnetic recording layer 10 that is formed of a ferromagnetic film and has a domain wall DW. The magnetic recording layer 10 has: a pair of end regions 11-1 and 11-2 whose magnetization directions are fixed; and a center region 12 sandwiched between the pair of end regions 11-1 and 11-2, in which the domain wall. DW moves. A first trapping site TS1 by which the domain wall DW is trapped is formed at a boundary between the end region 11-1, 11-2 and the center region 12. Furthermore, at least one second trapping site TS2 by which the domain wall DW is trapped is formed within the center region 12.

Abstract: A domain wall motion type MRAM has: a magnetic recording layer 10 being a ferromagnetic layer having perpendicular magnetic anisotropy; a pair of current supply terminals 14a and 14b connected to the magnetic recording layer 10 for supplying a current to the magnetic recording layer 10; and an anti-ferromagnetic layer 45 being in contact with a first region R1 of the magnetic recording layer 10. The first region R1 includes a part of a current supply region RA of the magnetic recording layer 10 that is between the pair of current supply terminals 14a and 14b.