Abstract: A jet of water in a cylindrical form is supplied from a jet nozzle onto a measurement surface of a substrate to form a column of the water extending between the nozzle and the measurement surface. Light is emitted from an irradiation fiber and transmitted through the column of water to the measurement surface. The light reflected by the measurement surface is received by a light-receiving fiber through the column of water. A measurement calculation unit measures the thickness of a film formed on the substrate, based on the intensity of the reflected light.

Abstract: The substrate polishing apparatus for polishing a polishing surface of a substrate comprises a film thickness monitoring device for monitoring a state of a film thickness of a thin film on the polishing surface of the substrate during polishing. The apparatus includes a table, a polishing member fixed on a surface of the table, a substrate support member for pressing the substrate onto the polishing member, an optical system composed of an optical fiber for irradiating the polishing surface of the substrate with a light of irradiation and an optical fiber for receiving a reflected light reflected on the polishing surface of the substrate, an analysis-processing system for processing an analysis of the reflected light received with the optical system, and the film-thickness monitoring device, wherein the table is provided with a liquid-feeding opening for feeding a translucent liquid into a through-hole disposed in the polishing member.

Abstract: A film thickness measuring method and apparatus sets forth a spectral reflectance ratio S(&lgr;) at a spot where the film to be measured is present and a spectral reflectance ratio R(&lgr;) at a spot where the film to be measured is not present are measured to determine a spectral reflectance ratio Rmeas(&lgr;)=S(&lgr;)/R(&lgr;). A theoretical value Rcalc(&lgr;) of the spectral reflectance ratio at an assumed film thickness d is determined, and an evaluation value Ed is determined from the total sum of differences between the value of Rmeas(&lgr;) and the value of Rcalc(&lgr;). Assuming that the spectral reflectance ratio Rmeas(&lgr;e) of the film is 1 (Rmeas(&lgr;e)=1), an evaluation value Enewd is determined. The film thickness d is changed to determine an evaluation function Enew(d). An evaluation function ratio PE(d) is determined from E(d)/Enew(d), and a film thickness d that gives a minimum value of the ratio PE(d) is determined to be a measured film thickness D.

Abstract: The substrate polishing apparatus for polishing a polishing surface of a substrate comprises a film thickness monitoring device for monitoring a state of a film thickness of a thin film on the polishing surface of the substrate during polishing. The apparatus includes a table, a polishing member fixed on a surface of the table, a substrate support member for pressing the substrate onto the polishing member, an optical system composed of an optical fiber for irradiating the polishing surface of the substrate with a light of irradiation and an optical fiber for receiving a reflected light reflected on the polishing surface of the substrate, an analysis-processing system for processing an analysis of the reflected light received with the optical system, and the film-thickness monitoring device, wherein the table is provided with a liquid-feeding opening for feeding a translucent liquid into a through-hole disposed in the polishing member.

Abstract: A film thickness measuring method and apparatus capable of measuring a film thickness with high accuracy even if the spectral reflection intensity is not sufficiently high to measure an accurate film thickness and gives a poor S/N ratio. A spectral reflectance ratio S(&lgr;) at a spot where the film under measurement is present and a spectral reflectance ratio R(&lgr;) at a spot where the film under measurement is not present are measured to determine a spectral reflectance ratio Rmeas(&lgr;)=S(&lgr;)/R(&lgr;). A theoretical value Rcalc(&lgr;) of spectral reflectance ratio at an assumed film thickness d is determined, and an evaluation value Ed is determined from the total sum of differences between the value of Rmeas(&lgr;) and the value of Rcalc(&lgr;). The film thickness d is changed in steps of &Dgr;d in a measuring retrieval range of from d1 to d2 to determine an evaluation value Ed at each film thickness, thereby obtaining an evaluation function E(d).

Abstract: A jet of water in a cylindrical form is supplied from a jet nozzle onto a measurement surface of a substrate to form a column of the water extending between the nozzle and the measurement surface Light is emitted from an irradiation fiber and transmitted through the column of water to the measurement surface. The light reflected by the measurement surface is received by a light-receiving fiber through the column of water. A measurement calculation unit measures the thickness of a film formed on the substrate, based on the intensity of the reflected light.