Abstract: Provided is a method to manufacture a composite carbon material capable of obtaining a non-aqueous secondary battery, which has high capacity, initial efficiency, and low charging resistance and is excellent in productivity. As a result thereof, a high-performance non-aqueous secondary battery is stably provided with efficiency. A composite carbon material for a non-aqueous secondary battery is provided, which contains at least a bulk mesophase artificial graphite particle (A) and graphite particle (B) having an aspect ratio of 5 or greater, and which is capable of absorbing and releasing lithium ions. A graphite crystal layered structure of the graphite particle (B) is arranged in the same direction as a direction of an outer peripheral surface of the bulk mesophase artificial graphite particle (A) at a part of a surface of the bulk mesophase artificial graphite particle (A), and an average circularity of the composite carbon material is 0.9 or greater.

Abstract: A wireless communication device includes: a wireless communication module configured to receive a plurality of notification signals that are successively transmitted from another wireless communication device; and a processor that is connected to the wireless communication module, the processor calculating a clock error between a clock in the wireless communication device and a clock in the other wireless communication device based on one or more of the notification signals that are received, and determining a timing at which to make the wireless communication module ready to receive a next notification signal from the other wireless communication device in accordance with the calculated clock error and a time interval at which the next notification signal will be transmitted from the other wireless communication device, the time interval being a predetermined fixed time interval or contained in the notification signal that has been received immediately prior to the next notification signal.

Abstract: Provided are: a negative electrode material for nonaqueous secondary batteries, which has a high capacity and exhibits excellent low-temperature input-output characteristics, charge-discharge rate characteristics, cycle characteristics, and the like; and a negative electrode for nonaqueous secondary batteries and a nonaqueous secondary battery, which include the negative electrode material. The negative electrode material for nonaqueous secondary batteries includes silicon oxide particles (A) and a carbon material (B), wherein the silicon oxide particles (A) contain zero-valent silicon atoms, and the carbon material (B) has a volume resistivity of less than 0.14 ?·cm at a powder density of 1.1 g/cm3.

Abstract: Provided are: a negative electrode material for nonaqueous secondary batteries, which can yield a high-capacity nonaqueous secondary battery having excellent discharge rate characteristics; and a negative electrode for nonaqueous secondary batteries and a nonaqueous secondary battery. Also provided is a nonaqueous secondary battery having excellent charge-discharge efficiency. The negative electrode material for nonaqueous secondary batteries includes carbonaceous particles (A) and silicon oxide particles (B), and satisfies the followings: a) the average particle size (50% cumulative particle size from the smaller particle side; d50) is 3 ?m to 30 ?m, and the 10% cumulative particle size from the smaller particle side (d10) is 0.1 ?m to 10 ?m; b) the ratio (R1=d90/d10) between the 90% cumulative particle size from the smaller particle side (d90) and the d10 is 3 to 20; and c) the ratio (R2=d50/d10) between the d50 and the d10 is 1.7 to 5.

Abstract: A method for manufacturing a silicon carbide semiconductor device includes preparing a silicon carbide layer including an n-type region having an n conductivity type and a p-type region having a p conductivity type, forming a material layer containing titanium, aluminum, and silicon on the n-type region and the p-type region, and forming an electrode layer in contact with the n-type region and the p-type region by heating the material layer. In forming a material layer, composition of the material layer is determined such that a point (x, y, z) (x, y, and z each being a numeric value greater than 0) representing a composition ratio among titanium, aluminum, and silicon is included in a first triangular pyramidal region having four points of the origin (0, 0, 0), a point (1, 2, 2), a point (2, 1, 2) and a point (2, 2, 1) as vertices.

Abstract: A wireless communication device includes: a wireless communication module configured to receive a plurality of notification signals that are successively transmitted from another wireless communication device; and a processor that is connected to the wireless communication module, the processor calculating a clock error between a clock in the wireless communication device and a clock in the other wireless communication device based on one or more of the notification signals that are received, and determining a timing at which to make the wireless communication module ready to receive a next notification signal from the other wireless communication device in accordance with the calculated clock error and a time interval at which the next notification signal will be transmitted from the other wireless communication device, the time interval being a predetermined fixed time interval or contained in the notification signal that has been received immediately prior to the next notification signal.

Abstract: A silicon carbide semiconductor device includes a silicon carbide substrate, a gate insulating film, and a gate electrode. The gate insulating film is provided as being in contact with the first main surface of the silicon carbide substrate. The gate electrode is provided on the gate insulating film such that the gate insulating film lies between the gate electrode and the silicon carbide substrate. In a first stress test in which a gate voltage of ?5 V is applied to the gate electrode for 100 hours at a temperature of 175° C., an absolute value of a difference between a first threshold voltage and a second threshold voltage is not more than 0.5 V, with a threshold voltage before the first stress test being defined as the first threshold voltage and a threshold voltage after the first stress test being defined as the second threshold voltage.

Abstract: In automatic travel control of a flying device towards a target, when a current distance from the target is large in comparison to a prescribed distance threshold, a controller of the flying device performs velocity feedback PID control to control the flight propulsion unit of the flying device. When the current distance becomes small in comparison to the prescribed distance threshold, the controller performs a hybrid of the velocity feedback PID control and position feedback PID control to control the flight propulsion unit such that as the flying device approaches the target, the position feedback PID control becomes more dominant than the velocity PID control. The processor calculates a weighted average of the respective manipulated variables with dynamically adjusted weights to achieve the hybrid control.

Abstract: A moving device includes an imaging unit, an acquiring unit, a determining unit and an imaging control unit. The acquiring unit is configured to acquire a state at a time when the moving device is released from a user. The determining unit is configured to determine an imaging manner to control the imaging unit after the time of being released, based on the state acquired by the acquiring unit. The imaging control unit is configured to control the imaging unit in the imaging manner determined by the determining unit.

Abstract: A wireless communication device includes: a wireless communication module configured to receive a plurality of notification signals that are successively transmitted from another wireless communication device; and a processor that is connected to the wireless communication module, the processor calculating a clock error between a clock in the wireless communication device and a clock in the other wireless communication device based on one or more of the notification signals that are received, and determining a timing at which to make the wireless communication module ready to receive a next notification signal from the other wireless communication device in accordance with the calculated clock error and a time interval at which the next notification signal will be transmitted from the other wireless communication device, the time interval being a predetermined fixed time interval or contained in the notification signal that has been received immediately prior to the next notification signal.

Abstract: A flying device includes a propulsion unit, a distance sensor, a controller, a determiner and a control modifier. The propulsion unit enables the flying device to fly in air. The distance sensor determines a distance from the flying device to a reference plane. The controller controls an altitude of the flying device based on a value output from the distance sensor. The determiner determines occurrence of an environmental change due to a shift of the reference plane. The control modifier modifies control of the controller in a case in which the determiner determines the occurrence of the environmental change.

Abstract: A data read apparatus includes a nonvolatile memory comprising a plurality of blocks, each of the blocks including an area storing block information, in which a position of a next block is written, or storing the block information and file management information, and an area storing actual data; a volatile memory; a power-on circuit configured to turn on supply of power to the nonvolatile memory and the volatile memory; and a processor. The processor is configured to: read out the block information stored in each of the blocks of the nonvolatile memory, or the block information and the file management information, when the supply of power was turned on by the power-on circuit, and register the read-out block information, or the block information and the file management information, in the volatile memory as file position information.

Abstract: A flight device includes at least one propelling unit and a controller unit for flying in the air, and the flight device is thrown by a user. The controller unit drives the propelling unit after throwing is performed by the user, such that the flight device flies based on a state of the flight device at a moment when the throwing is performed.

Abstract: Provided is a photocurable resin composition that has a low viscosity and is capable of yielding a high refractive index. Specifically, a urethane (meth)acrylate resin (A) obtained by a reaction of an aromatic diisocyanate compound (a), a polyol compound (b), and a hydroxyl-group-containing (meth)acrylate compound (c) as essential raw material components is used. The urethane (meth)acrylate resin (A) contains a structural moiety (a-1) represented by structural formula (1) below: (where R1 represents a hydrogen atom or a methyl group) and a structural moiety (a-2) represented by structural formula (2) below: (where R1, R2, R3, X1, and X2 each independently represent a hydrogen atom or a methyl group) at a (a-1)/(a-2) molar ratio of 45/55 to 60/40. The polyol compound (b) has an aromatic hydrocarbon skeleton.

Abstract: The gate electrode is provided on the gate insulating film. The interlayer insulating film is provided to cover the gate electrode. The interlayer insulating film includes a first insulating film which is in contact with the gate electrode, contains silicon atoms, and contains neither phosphorus atoms nor boron atoms, a second insulating film which is provided on the first insulating film and contains silicon atoms and at least one of phosphorus atoms and boron atoms, and a third insulating film which contains silicon atoms and contains neither phosphorus atoms nor boron atoms. The second insulating film has a first surface which is in contact with the first insulating film, a second surface opposite to the first surface, and a third surface which connects the first surface and the second surface. The third insulating film is in contact with at least one of the second surface and the third surface.

Abstract: A silicon carbide semiconductor device includes a silicon carbide substrate, a gate insulating film, and a gate electrode. The gate insulating film is provided as being in contact with the first main surface of the silicon carbide substrate. The gate electrode is provided on the gate insulating film such that the gate insulating film lies between the gate electrode and the silicon carbide substrate. In a first stress test in which a gate voltage of ?5 V is applied to the gate electrode for 100 hours at a temperature of 175° C., an absolute value of a difference between a first threshold voltage and a second threshold voltage is not more than 0.5 V, with a threshold voltage before the first stress test being defined as the first threshold voltage and a threshold voltage after the first stress test being defined as the second threshold voltage.

Abstract: A transparent soluble polyimide resin was dissolved in N,N-dimethyacetamide, and a sample solution whose concentration was 10 weight percent was produced. This sample solution is put in a container CNT which is attached to an apparatus shown in FIG. 1, whereby a nanofiber structure was produced. The produced polyimide nanofiber structure acquired the excellent water resistance, air permeability and moisture permeability while maintaining the physical properties inherent in a polyimide, such as high heat resistance and insulation. Further, when a nanofiber structure is produced in a similar manner from a different polyimide resin, the nanofiber structure maintains excellent adhesiveness.

Abstract: A direction estimating device includes a plurality of antennas placed on a front surface of a board to have different main lobe directions of directivities, at least one antenna placed on a back surface of the board, a radiowave intensity obtainer that obtains a received signal strength indication (RSSI) of a radiowave received by the plurality of antennas placed on the front surface of the board, and by the at least one antenna placed on the back surface of the board, and an estimator that estimates an arriving direction of the radiowave based on the RSSI of the radiowave obtained by the radiowave intensity obtainer.

Abstract: A silicon carbide semiconductor device includes a silicon carbide substrate, a gate insulating film, and a gate electrode. The gate insulating film is provided as being in contact with the first main surface of the silicon carbide substrate. The gate electrode is provided on the gate insulating film such that the gate insulating film lies between the gate electrode and the silicon carbide substrate. In a first stress test in which a gate voltage of ?5 V is applied to the gate electrode for 100 hours at a temperature of 175° C., an absolute value of a difference between a first threshold voltage and a second threshold voltage is not more than 0.5 V, with a threshold voltage before the first stress test being defined as the first threshold voltage and a threshold voltage after the first stress test being defined as the second threshold voltage.

Abstract: Provided is a carbon material capable of obtaining a non-aqueous secondary battery, which has high capacity, initial efficiency, and low charging resistance and is excellent in productivity. As a result thereof, a high-performance non-aqueous secondary battery is stably provided with efficiency. A composite carbon material for a non-aqueous secondary battery is provided, which contains at least a bulk mesophase artificial graphite particle (A) and graphite particle (B) having an aspect ratio of 5 or greater, and which is capable of absorbing and releasing lithium ions. A graphite crystal layered structure of the graphite particle (B) is arranged in the same direction as a direction of an outer peripheral surface of the bulk mesophase artificial graphite particle (A) at a part of a surface of the bulk mesophase artificial graphite particle (A), and an average circularity of the composite carbon material is 0.9 or greater.