Abstract: A memory such as a 3D NAND array, having a page buffer having page buffer cells coupled to bit lines has a search word input such as a search word buffer coupled to word lines. A circuit, such as string select gates, is provided to connect a selected set of memory cells in the array to the page buffer. The page buffer includes sensing circuitry configured to apply a match sense signal to a latch in a plurality of storage elements for a stored data word and an input search word. Logic circuitry uses storage elements in the plurality of storage elements of the page buffer to accumulate the match sense signals output by the sensing circuitry over a sequence matching a plurality stored data words to one or more input search words. A match for a search is based on a threshold and the accumulated match sense signals.

Abstract: A memory controller accesses a memory page in a memory block of a storage memory array of a memory device. The memory controller reads memory data stored in the accessed memory page. The memory controller determines a number of error bits associated with the memory data. The memory controller obtains an erase count corresponding to the accessed memory page, the erase count indicating a number of erase operations performed on the accessed memory page. The memory controller determines, from among one or more error threshold values, an error threshold value based at least on the erase count. The memory controller determines a relationship between the number of error bits and the error threshold value. The memory controller triggers a data refresh for the accessed memory block if the relationship between the number of error bits and the error threshold value satisfy a known criterion.

Abstract: Methods, devices, and systems for managing data refresh for semiconductor devices are provided. In one aspect, a semiconductor device includes a memory cell array having a plurality of blocks each including multiple pages and one or more integrated circuits coupled to the memory cell array. The one or more integrated circuits are configured to: read specific data from a page of a block in the memory cell array, perform a logic operation on the specific data in the page to obtain a logic operation result, count a number of bits having a specific value among the logic operation result, determine whether the number of bits is within a data refresh criterion for the page, and in response to determining that the number of bits is outside of the data refresh criterion, generate a data refresh warning message for the page in the block.

Abstract: A memory device is provided that includes a memory array including a first array, a first redundant array that is local to the first array, a second array, and a second redundant array that is local to the second array, a cache array including a first cache, a first redundant cache that is local to the first cache, a second cache and a second redundant cache that is local to the second cache, and circuits comprising logic to execute operations. The operations include, responsive to an identification of a defective column in the first array, performing a local defect write repair and responsive to an identification of another defective column in the first array and a determination that the first redundant array is fully utilized, performing a global defect write repair by transferring data into the second redundant array through the first cache and the second redundant cache.

Abstract: A memory device is provided that includes a memory array including a first array, a first redundant array that is local to the first array, a second array, and a second redundant array that is local to the second array, a cache array including a first cache, a first redundant cache that is local to the first cache, a second cache and a second redundant cache that is local to the second cache, and circuits comprising logic to execute operations. The operations include, responsive to an identification of a defective column in the first array, performing a local defect write repair and responsive to an identification of another defective column in the first array and a determination that the first redundant array is fully utilized, performing a global defect write repair by transferring data into the second redundant array through the first cache and the second redundant cache.

Abstract: A data path for memory addressable using an addressing scheme based on a minimum addressable unit, such as a byte, having a size (e.g. 8) which is a power of 2, is configured for transferring data between the memory array and a data interface using a transfer storage unit having N bits (e.g. 12), where N is an integer that is not a power of 2. A page buffer and cache in the data path can be configured in unit arrays with N rows, and to transfer data in the transfer storage units from selected N cell columns.

Abstract: A compute in memory device comprises a memory array including a plurality of data lines for parallel access to memory array data, and an input/output interface. Data path circuits between the memory array and the input/output interface include a page buffer, each buffer cell of the page buffer including a plurality of storage elements. A plurality of computation circuits is provided connected to respective buffer cells. The computation circuits execute a function of data in the storage elements of the respective buffer cells and can be configured in parallel to generate a results data page including operation results for the plurality of buffer cells. A data analysis circuit is connected to the data path circuits to execute a function of the results data page to generate an analysis result. A register can be provided to store the analysis result accessible via the input/output interface.

Abstract: An IC is provided and includes a memory array, an address register holding at least one address of a securely stored file and configured to output three or more addresses of the securely stored filed and computation-in-memory (CIM) logic coupled with the memory array. The CIM logic is configured to perform a majority function on three or more bits of the securely stored file, wherein the three or more bits are redundantly stored in three or more different locations in the memory array and wherein the three locations are associated with the three or more addresses in the memory array.

Abstract: A method of operating a memory comprising a plurality of memory planes is disclosed. Each memory plane includes at least one corresponding memory array. The method includes, for each memory plane of the plurality of memory planes, generating (i) a corresponding plane ready (PRDY) signal indicating a busy or a ready state of the corresponding memory plane, and (ii) a corresponding plane array ready (PARDY) signal indicating a busy or a ready state of the corresponding memory array of the corresponding memory plane, such that a plurality of PRDY signals and a plurality of PARDY signals are generated corresponding to the plurality of memory planes. Execution of a memory command for a memory plane of the plurality of memory planes is selectively allowed or denied, based on status of one or more of the plurality of PRDY signals and the plurality of PARDY signals.

Abstract: A memory device includes a data register operatively coupled to the memory array, a cache operatively coupled to the data register, and an input/output interface operatively coupled to the cache. A controller executes a continuous page read operation to sequentially load pages to the data register and move the pages to the cache, in response to a page read command, executes the cache read operation in response to a cache read command to move data from the cache to the input/output interface, and to stall moving of the data from the cache until a next cache read command, and terminates the continuous page read operation in response to a terminate command.

Abstract: A data path for memory addressable using an addressing scheme based on a minimum addressable unit, such as a byte, having a size (e.g. 8) which is a power of 2, is configured for transferring data between the memory array and a data interface using a transfer storage unit having N bits (e.g. 12), where N is an integer that is not a power of 2. A page buffer and cache in the data path can be configured in unit arrays with N rows, and to transfer data in the transfer storage units from selected N cell columns.

Abstract: A memory device such as a page mode NAND flash including a page buffer, and an input/output interface for I/O data units having an I/O width less than the page width supports continuous page read with non-sequential addresses. A controller controls a continuous page read operation to output a stream of pages at the I/O interface. The continuous read operation includes responding to a series of commands to output a continuous stream of pages. The series of commands including a first command and a plurality of intra-stream commands received before completing output of a preceding page in the stream. The first command includes an address to initiate the continuous page read operation, and at least one intra-stream command in the plurality of intra-stream commands includes a non-sequential address to provide the non-sequential page in the stream of pages.

Abstract: A memory controller accesses a memory page in a memory block of a storage memory array of a memory device. The memory controller reads memory data stored in the accessed memory page. The memory controller determines a number of error bits associated with the memory data. The memory controller obtains an erase count corresponding to the accessed memory page, the erase count indicating a number of erase operations performed on the accessed memory page. The memory controller determines, from among one or more error threshold values, an error threshold value based at least on the erase count. The memory controller determines a relationship between the number of error bits and the error threshold value. The memory controller triggers a data refresh for the accessed memory block if the relationship between the number of error bits and the error threshold value satisfy a known criterion.

Abstract: A method provides the capability to maintain a configuration settings data image stored by a non-volatile memory device. The configuration settings data image can be multiple times programmed (MTP) without sacrificing reliability of the semiconductor device in the event of spurious power fluctuations, intermittent or bad memory storage blocks storing the configuration settings data image.

Abstract: The disclosed technology provides for automatically skipping bad block(s) in continuous read or sequential read operations in memory devices including NAND flash memory. Bad blocks can be skipped by analyzing block integrity during one at a time addressing of the blocks, or by skipping sets of consecutive bad blocks in a set of bad blocks using stored bad block information. Multiple sets of consecutive bad blocks can also be analyzed and skipped. A list of good blocks can be maintained, and only good blocks are used when performing a continuous cache read or sequential read operation. The list can be maintained in non-volatile memory enabling the device to load the block addresses upon power on startup. Additionally, a command to add additional blocks when received can implement adding new blocks to the list.

Abstract: A memory controller accesses a memory page in a memory block of a storage memory array of a memory device. The memory controller reads memory data stored in the accessed memory page. The memory controller determines a number of error bits associated with the memory data. The memory controller obtains an erase count corresponding to the accessed memory page, the erase count indicating a number of erase operations performed on the accessed memory page. The memory controller determines, from among one or more error threshold values, an error threshold value based at least on the erase count. The memory controller determines a relationship between the number of error bits and the error threshold value. The memory controller triggers a data refresh for the accessed memory block if the relationship between the number of error bits and the error threshold value satisfy a known criterion.

Abstract: A flash memory system and a flash memory thereof are provided. The flash memory device includes a NAND flash memory and a control circuit. The NAND flash memory chip includes a cache memory, a page buffer; and an NAND flash memory array. The NAND flash memory array includes a plurality of pages, wherein each page includes a plurality of sub-pages, each sub-page has a sub-page length. The cache memory is composed of a plurality of sub cache and each sub cache corresponds to different pages of the NAND flash memory array. The page buffer is composed of a plurality of sub-page buffers and each sub-page buffer corresponds to different pages of the NAND flash memory array. The control circuit is coupled to the host and the NAND flash memory, and performs an access operation in units of one sub-page.

Abstract: A method provides the capability to maintain a configuration settings data image stored by a non-volatile memory device. The configuration settings data image can be multiple times programmed (MTP) without sacrificing reliability of the semiconductor device in the event of spurious power fluctuations, intermittent or bad memory storage blocks storing the configuration settings data image.

Abstract: A flash memory system and a flash memory thereof are provided. The flash memory device includes a NAND flash memory and a control circuit. The NAND flash memory chip includes a cache memory, a page buffer; and an NAND flash memory array. The NAND flash memory array includes a plurality of pages, wherein each page includes a plurality of sub-pages, each sub-page has a sub-page length. The cache memory is composed of a plurality of sub cache and each sub cache corresponds to different pages of the NAND flash memory array. The page buffer is composed of a plurality of sub-page buffers and each sub-page buffer corresponds to different pages of the NAND flash memory array. The control circuit is coupled to the host and the NAND flash memory, and performs an access operation in units of one sub-page.

Abstract: A memory controller accesses a memory page in a memory block of a storage memory array of a memory device. The memory controller reads memory data stored in the accessed memory page. The memory controller determines a number of error bits associated with the memory data. The memory controller obtains an erase count corresponding to the accessed memory page, the erase count indicating a number of erase operations performed on the accessed memory page. The memory controller determines, from among one or more error threshold values, an error threshold value based at least on the erase count. The memory controller determines a relationship between the number of error bits and the error threshold value. The memory controller triggers a data refresh for the accessed memory block if the relationship between the number of error bits and the error threshold value satisfy a known criterion.