Abstract: A method for processing a substrate, the substrate comprising an organic film pattern, the method comprising: a fusion/deformation step of fusing said organic film pattern to deform the fused organic film pattern and a third removal step of removing at least a part of the fused and deformed organic film pattern.

Abstract: A method of processing a substrate through the use of an apparatus, including a substrate carrier for carrying a substrate; a liquid-applying unit for applying chemical to said substrate; and a gas-applying unit for applying gas atmosphere generated by vaporizing the liquid to said substrate. And the apparatus includes a plurality of process units, and the same process is applied to the substrate in each said process units.

Abstract: The apparatus for processing a substrate includes a substrate carrier for carrying a substrate, a chemical-applying unit for applying chemical to the substrate, and a gas-applying unit for applying gas atmosphere to the substrate.

Abstract: A method of processing a substrate through the use of an apparatus, including a substrate carrier for carrying a substrate; a liquid-applying unit for applying chemical to said substrate; and a gas-applying unit for applying gas atmosphere to said substrate, wherein the method includes processing an organic film pattern formed on a substrate, by, in sequence, removing one of an altered layer and a deposited layer formed on the organic film pattern, and fusing said organic film pattern for deformation by applying gas atmosphere to the organic film pattern in the gas-applying unit, wherein at least a part of the removal step is carried out by applying a liquid to the organic film pattern in the liquid-applying unit. The process may include an ashing unit for ashing the substrate and/or a development unit for developing the organic film pattern.

Abstract: An apparatus for processing a substrate includes a gas-atmosphere applying unit for applying gas atmosphere to the substrate, and a light-exposure unit for exposing the substrate to light through a lower surface of the substrate.

Abstract: A method for forming an organic mask, includes: permeating an organic solvent into an organic pattern formed on a base film and containing at least one kind of organic material, by contacting the organic pattern with the organic solvent; and thereby, partially or entirely decreasing original adhesion strength between the base film and the organic pattern. A heat treatment may be conducted after contacting to adjust the adhesion strength. Using the organic pattern as a mask, isotropic etching is conducted. As a result, a desired taper angle of the etched base film can be achieved with high accuracy. The taper angle of the etched base film is adjustable by controlling the adhesion strength through the heat treatment.

Abstract: A method for forming an organic mask, includes: permeating an organic solvent into an organic pattern formed on a base film and containing at least one kind of organic material, by contacting the organic pattern with the organic solvent; and thereby, partially or entirely decreasing original adhesion strength between the base film and the organic pattern. A heat treatment may be conducted after contacting to adjust the adhesion strength. Using the organic pattern as a mask, isotropic etching is conducted. As a result, a desired taper angle of the etched base film can be achieved with high accuracy. The taper angle of the etched base film is adjustable by controlling the adhesion strength through the heat treatment.

Abstract: The apparatus for processing a substrate includes a substrate carrier for carrying a substrate, a chemical-applying unit for applying chemical to the substrate, and a gas-applying unit for applying gas atmosphere to the substrate.

Abstract: A substrate processing system which sprays exposure process gas onto a substrate disposed within a chamber. The substrate processing system is used, for example, for performing an exposure process of an organic film formed on a substrate in a gas atmosphere obtained by vaporizing an organic solvent solution for dissolving and reflowing an organic film. The substrate processing system comprises: the chamber having at least one gas inlet and at least one gas outlets; a gas introducing means which introduces the exposure process gas into the chamber via the gas inlet; and a gas distributing means. The gas distributing means separates an inner space of the chamber into a first space into which the exposure process gas is introduced via the gas inlet and a second space in which the substrate is disposed.

Abstract: A method of deforming a pattern comprising the steps of: forming, over a substrate, a layered-structure with an upper surface including at least one selected region and at least a re-flow stopper groove, wherein the re-flow stopper groove extends outside the selected region and separate from the selected region; selectively forming at least one pattern on the selected region; and causing a re-flow of the pattern, wherein a part of an outwardly re-flowed pattern is flowed into the re-flow stopper groove, and then an outward re-flow of the pattern is restricted by the re-flow stopper groove extending outside of the pattern, thereby to form a deformed pattern with at least an outside edge part defined by an outside edge of the re-flow stopper groove.

Abstract: An apparatus for processing a substrate includes a substrate carrier for carrying a substrate, a chemical-applying unit for applying chemical to the substrate, and a development unit for developing the substrate.

Abstract: To provide a method for forming an etching structure without difficulty to control the manufacturing conditions, and with a minute dimension exceeding the limit of exposure, while suppressing increase of manufacturing processes and increasing of manufacturing cost.

Abstract: A method of fabricating a light-reflector to be used in a light-reflection type or half-transmission type liquid crystal display device, includes (a) forming at least one organic film pattern, the organic film pattern being in the form of one of an island and a mesh, (b) exposing the organic film pattern to a steam atmosphere to melt and deform the organic film pattern such that the organic film pattern has a wavy surface, and (c) covering the organic film pattern with a light-reflecting electrode.

Abstract: A method of processing a substrate, including a step of processing an organic film pattern formed on a substrate, the step including, in sequence, a removal step of removing one of an alterated layer and a deposited layer formed on the organic film pattern, and a fusion/deformation step of fusing the organic film pattern for deformation, wherein at least a part of the removal step is carried out by applying chemical to the organic film pattern.

Abstract: A method of processing a substrate, including a step of processing an organic film pattern formed on a substrate, the step including, in sequence, a removal step of removing one of an alterated layer and a deposited layer formed on the organic film pattern, and a fusion/deformation step of fusing the organic film pattern for deformation, wherein at least a part of the removal step is carried out by applying chemical to the organic film pattern.

Abstract: A substrate processing system which sprays exposure process gas onto a substrate disposed within a chamber. The substrate processing system is used, for example, for performing an exposure process of an organic film formed on a substrate in a gas atmosphere obtained by vaporizing an organic solvent solution for dissolving and reflowing an organic film. The substrate processing system comprises: the chamber having at least one gas inlet and at least one gas outlets; a gas introducing means which introduces the exposure process gas into the chamber via the gas inlet; and a gas distributing means. The gas distributing means separates an inner space of the chamber into a first space into which the exposure process gas is introduced via the gas inlet and a second space in which the substrate is disposed.

Abstract: A method for forming a structure formed by etching which is typified by a contact hole in the semiconductor and a method for manufacturing a display device using the structure. The etching method includes at least, forming an organic mask having a first opening portion and a second opening portion by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched, and forming a transformed organic mask by dissolving the organic mask in contact with organic solvent and reflowing.

Abstract: An apparatus for processing a substrate includes a gas-atmosphere applying unit for applying gas atmosphere to the substrate, and a light-exposure unit for exposing the substrate to light through a lower surface of the substrate.

Abstract: A method of processing an organic film pattern formed on a substrate, includes, in sequence of, a fusion/deformation step of fusing and thereby deforming the organic film pattern, and a third removal step of removing at least a part of the fused and deformed organic film pattern.

Abstract: A process for forming a pattern contains steps of: forming a first mask pattern on a film to be etched on a substrate; forming a first pattern of the film to be etched by using the first mask pattern as a mask; forming a second mask pattern having a plane shape different from that of the first mask pattern by deforming the first mask pattern; and forming a second pattern of the film to be etched different from the first pattern by using the second mask pattern. By applying the process for forming a pattern, for example, to the formation of a semiconductor layer and source and drain electrodes of a TFT substrate of a liquid crystal display apparatus, the above-stated formation requiring two photoresist process steps in a conventional manufacturing method of a liquid crystal display apparatus can be carried out by only one process step, thereby reducing manufacturing cost thereof.