Abstract: A method of dispersing graphene and graphitic nanomaterials uses a multiphase fluid dynamic technique. The method includes a device, incorporating a high intensity fluid dynamics technique, controlling the expansion and compression ratio of the working stream that leads to an effective dispersion of the nanomaterial in the matrix. The condensation of the injected steam creates high intensity and controllable cavitation, leading to effective dispersion of the graphitic nanomaterial. The dispersion is most preferably done in a medium that creates a repulsive potential to balance the attractive inter-graphitic layer potential.

Abstract: A bonding structure and a method for bonding components, wherein the bonding structure includes a nanoparticle preform. In accordance with embodiments, the nanoparticle preform is placed on a substrate and a workpiece is placed on the nanoparticle preform.

Abstract: A bonding structure and a method for bonding components, wherein the bonding structure includes a nanoparticle preform. In accordance with embodiments, the nanoparticle preform is placed on a substrate and a workpiece is placed on the nanoparticle preform.

Abstract: A bonding structure and a method for bonding components, wherein the bonding structure includes a nanoparticle preform. In accordance with embodiments, the nanoparticle preform is placed on a substrate and a workpiece is placed on the nanoparticle preform.

Abstract: A method of dispersing graphene and graphitic nanomaterials uses multiphase fluid dynamic technique. The method includes a device, incorporating high intensity fluid dynamics technique (10), controlling the expansion and compression ratio of the working stream that leads to an effective dispersion of the nanomaterial in the matrix. The condensation of the injected steam creates high intensity and controllable cavitation, leading to effective dispersion of the graphitic nanomaterial. The dispersion is most preferably done in a medium that creates a repulsive potential to balance the attractive inter-graphitic layer potential.

Abstract: A bonding structure and a method for bonding components, wherein the bonding structure includes a nanoparticle preform. In accordance with embodiments, the nanoparticle preform is placed on a substrate and a workpiece is placed on the nanoparticle preform.

Abstract: An electronic device can include a packaging material having a first surface and a second surface opposite the first surface, and leads including die connection surfaces and external connection surfaces. The electronic device can further include a trench extending from an upper surface of the packaging substrate towards a lower surface of the packaging substrate, wherein a set of leads lie immediately adjacent to the trench, and the packaging material is exposed at the bottom of the trench. In an embodiment, an encapsulant is formed over the upper surface of the packaging substrate and within the trench. In a particular embodiment, the trenches may be formed before or after placing a die over the packaging substrate, or before or after forming electrical connections between the die and leads of the packaging substrate.

Abstract: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes stacked semiconductor die. In accordance with embodiments, the semiconductor component includes a substrate having a component receiving area and a plurality of bond pads. A semiconductor chip is attached to the component receiving area. An electrical connector is coupled to the semiconductor chip and the substrate. A second semiconductor chip is mounted or attached to one of the ends of the electrical connector such that this end is positioned between the semiconductor chips. A second electrical connector is coupled between the second semiconductor chip and the substrate. A third semiconductor chip is mounted over or attached to the second electrical connector such that a portion is between the second and third semiconductor chips.

Abstract: A connector assembly and a method for manufacturing the connector assembly. In accordance with embodiments, the connector assembly includes an electrical connector having first and second surfaces and first and second ends. A layer of electrically insulating material is formed from or on a portion of the first surface at the first end. Optionally, a layer of electrically insulating material can be formed from or on the second surface.

Abstract: An electronic device can include a packaging material having a first surface and a second surface opposite the first surface, and leads including die connection surfaces and external connection surfaces. The electronic device can further include a trench extending from an upper surface of the packaging substrate towards a lower surface of the packaging substrate, wherein a set of leads lie immediately adjacent to the trench, and the packaging material is exposed at the bottom of the trench. In an embodiment, an encapsulant is formed over the upper surface of the packaging substrate and within the trench. In a particular embodiment, the trenches may be formed before or after placing a die over the packaging substrate, or before or after forming electrical connections between the die and leads of the packaging substrate.

Abstract: An electronic device can include a packaging material having a first surface and a second surface opposite the first surface, and leads including die connection surfaces and external connection surfaces. The electronic device can further include a trench extending from an upper surface of the packaging substrate towards a lower surface of the packaging substrate, wherein a set of leads lie immediately adjacent to the trench, and the packaging material is exposed at the bottom of the trench. In an embodiment, an encapsulant is formed over the upper surface of the packaging substrate and within the trench. In a particular embodiment, the trenches may be formed before or after placing a die over the packaging substrate, or before or after forming electrical connections between the die and leads of the packaging substrate.

Abstract: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes stacked semiconductor die. In accordance with embodiments, the semiconductor component includes a substrate having a component receiving area and a plurality of bond pads. A semiconductor chip is attached to the component receiving area. An electrical connector is coupled to the semiconductor chip and the substrate. A second semiconductor chip is mounted or attached to one of the ends of the electrical connector such that this end is positioned between the semiconductor chips. A second electrical connector is coupled between the second semiconductor chip and the substrate. A third semiconductor chip is mounted over or attached to the second electrical connector such that a portion is between the second and third semiconductor chips.

Abstract: A connector assembly and a method for manufacturing the connector assembly. In accordance with embodiments, the connector assembly includes an electrical connector having first and second surfaces and first and second ends. A layer of electrically insulating material is formed from or on a portion of the first surface at the first end. Optionally, a layer of electrically insulating material can be formed from or on the second surface.

Abstract: A bonding structure and a method for bonding components, wherein the bonding structure includes a nanoparticle preform. In accordance with embodiments, the nanoparticle preform is placed on a substrate and a workpiece is placed on the nanoparticle preform.

Abstract: An electronic device can include a packaging material having a first surface and a second surface opposite the first surface, and leads including die connection surfaces and external connection surfaces. The electronic device can further include a trench extending from an upper surface of the packaging substrate towards a lower surface of the packaging substrate, wherein a set of leads lie immediately adjacent to the trench, and the packaging material is exposed at the bottom of the trench. In an embodiment, an encapsulant is formed over the upper surface of the packaging substrate and within the trench. In a particular embodiment, the trenches may be formed before or after placing a die over the packaging substrate, or before or after forming electrical connections between the die and leads of the packaging substrate.

Abstract: A method for manufacturing a semiconductor component that includes a leadframe having a non-metallic base structure and an intermediate leadframe structure. The non-metallic base structure may be, among other things, paper, cellulose, or plastic. A layer of electrically conductive material is formed over the non-metallic base structure. A circuit element attach structure and a plurality of leadframe leads are formed from the layer of electrically conductive material. A circuit element is coupled to the circuit element attach structure and electrically coupled to the plurality of leadframe leads. The circuit element is encapsulated and at least the non-metallic base structure is removed. Alternatively, a plurality of leadframe leads may be formed on the electrically conductive layer and a circuit element is placed over the electrically conductive layer. The circuit element is electrically coupled to the plurality of leadframe leads and encapsulated.

Abstract: A method for manufacturing a semiconductor component that includes a leadframe having a non-metallic base structure and an intermediate leadframe structure. The non-metallic base structure may be, among other things, paper, cellulose, or plastic. A layer of electrically conductive material is formed over the non-metallic base structure. A circuit element attach structure and a plurality of leadframe leads are formed from the layer of electrically conductive material. A circuit element is coupled to the circuit element attach structure and electrically coupled to the plurality of leadframe leads. The circuit element is encapsulated and at least the non-metallic base structure is removed. Alternatively, a plurality of leadframe leads may be formed on the electrically conductive layer and a circuit element is placed over the electrically conductive layer. The circuit element is electrically coupled to the plurality of leadframe leads and encapsulated.

Abstract: In one embodiment, a semiconductor package includes a conductive slug and columnar leads in spaced relationship thereto. The columnar leads are coupled to an electronic device attached to the slug, and are exposed at least on one side of the package opposite the die attach slug. The die attach slug is further exposed to provide a package configured in a slug up orientation.

Abstract: In one embodiment, a semiconductor package includes a conductive slug and columnar leads in spaced relationship thereto. The columnar leads are coupled to an electronic device attached to the slug, and are exposed at least on one side of the package opposite the die attach slug. The die attach slug is further exposed to provide a package configured in a slug up orientation.