Abstract: A control module for an industrial device is provided. The control module includes a coupling feature configured to facilitate removable attachment of the control module with the industrial device and a communicative coupling feature configured to facilitate communication between the control module and the industrial device when coupled with a corresponding communicative coupling feature of the industrial device. The control module also includes a port configured to communicatively couple with a connector capable of supplying power and data communication, wherein the port is configured to receive power via the connector and exchange data with a computer via the connector.

Abstract: An integrated circuit system includes providing an integrated circuit wafer; applying a first cleaning solution over the integrated circuit wafer; and applying a second cleaning solution over the integrated circuit wafer to prevent or remove a defect resulting from the first cleaning process.

Abstract: A method for fabricating a semiconductor device includes forming an SiGe region. The SiGe region can be an embedded source and drain region, or a compressive SiGe channel layer, or other SiGe regions within a semiconductor device. The SiGe region is exposed to an SC1 solution and excess surface portions of the SiGe region are selectively removed. The SC1 etching process can be part of a rework method in which overgrowth regions of SiGe are selectively removed by exposing the SiGe to and SC1 solution maintained at an elevated temperature. The etching process is carried out for a period of time sufficient to remove excess surface portions of SiGe. The SC1 etching process can be carried out at elevated temperatures ranging from about 25° C. to about 65° C.

Abstract: The invention relates to a method for switching a multimedia source and multimedia sink from an operating mode to a standby mode, and a method for switching a multimedia source and multimedia sink from a standby mode to an operating mode. When the consumer device comprises two distributed boxes, such as a TV in which the display (multimedia sink) is separated from the processing unit (multimedia source) via a cable, then meeting the green rules for standby power becomes more complicated. The power consumption of processing unit and display unit should be minimal in standby mode. The methods of the invention provide for synchronizing the power states of both units, such that only the relevant parts remain active. The method is applicable on configurations where a DisplayPort link is used between a multimedia source, such as a set-top box, and a multimedia sink, such as a display.

Abstract: Methods of forming integrated circuit devices include forming a field effect transistor having a gate electrode, sacrificial nitride spacers on opposing sidewalls of the gate electrode and source/drain regions, which are self-aligned to the sacrificial nitride spacers, on a semiconductor substrate. The sacrificial nitride spacers are selectively removed using a diluted hydrofluoric acid solution having a nitride-to-oxide etching selectivity in excess of one. In order to increase charge carrier mobility within a channel of the field effect transistor, a stress-inducing electrically insulating layer is formed on opposing sidewalls of the gate electrode. This insulating layer is configured to induce a net tensile stress (NMOS) or compressive stress (PMOS) in the channel.

Abstract: A method for fabricating a semiconductor device includes forming an SiGe region. The SiGe region can be an embedded source and drain region, or a compressive SiGe channel layer, or other SiGe regions within a semiconductor device. The SiGe region is exposed to an SC1 solution and excess surface portions of the SiGe region are selectively removed. The SC1 etching process can be part of a rework method in which overgrowth regions of SiGe are selectively removed by exposing the SiGe to and SC1 solution maintained at an elevated temperature. The etching process is carried out for a period of time sufficient to remove excess surface portions of SiGe. The SC1 etching process can be carried out at elevated temperatures ranging from about 25° C. to about 65° C.

Abstract: A recirculation filter includes a first layer and a second layer. The first layer has a first side and a second side and is configured to trap particles that are of a first size. The second layer has a first portion adjacent to the first side of the first layer and a second portion adjacent the second side of the first layer. The second layer is configured to trap particles that are of a second size. The second size of particles trapped by the second layer is greater than the first size of particles trapped by the first layer.

Abstract: Methods of forming integrated circuit devices include forming a field effect transistor having a gate electrode, sacrificial nitride spacers on opposing sidewalls of the gate electrode and source/drain regions, which are self-aligned to the sacrificial nitride spacers, on a semiconductor substrate. The sacrificial nitride spacers are selectively removed using a diluted hydrofluoric acid solution having a nitride-to-oxide etching selectivity in excess of one. In order to increase charge carrier mobility within a channel of the field effect transistor, a stress-inducing electrically insulating layer is formed on opposing sidewalls of the gate electrode. This insulating layer is configured to induce a net tensile stress (NMOS) or compressive stress (PMOS) in the channel.

Abstract: There is described a display product (10) suitable for use in bedrooms, the display product (10) being arranged to provide a “night-light” facility. The display product (10) includes a display (20). Moreover, the display product (10) includes processing circuits (40, 50, 70, 80) for receiving one or more image signals and presenting the images on the display (20). Furthermore, the display product (10) comprises controlling circuits (100, 110, 120) for selectively switching operation of the display product (10) between a first display product mode of operation (MD1) during which program content is presented on the display (20) and a second night-light mode of operation (MD2) during which the display product (10) is operable to function at reduced power to provide night-light illumination from the display (20). Preferably, color and/or brightness of the display (20) when operating in the second mode (MD2) is user-selectable. Conveniently, the display (20) includes a back-lit liquid crystal display (LCD).

Abstract: An integrated circuit system includes providing an integrated circuit wafer; applying a first cleaning solution over the integrated circuit wafer; and applying a second cleaning solution over the integrated circuit wafer to prevent or remove a defect resulting from the first cleaning process.

Abstract: A recirculation filter includes a first layer and a second layer. The first layer has a first side and a second side and is configured to trap particles that are of a first size. The second layer has a first portion adjacent to the first side of the first layer and a second portion adjacent the second side of the first layer. The second layer is configured to trap particles that are of a second size. The second size of particles trapped by the second layer is greater than the first size of particles trapped by the first layer.

Abstract: A fly height controller circuit for a disk drive head having a resistive heater is disclosed. The fly height controller includes an error amplifier that controls a variable current source driving the resistive heater. The error amplifier compares a desired heater power signal with a feedback power signal that is generated by a multiplier. The multiplier receives a signal corresponding to the resistive heater current, for example as generated by a second variable current source also controlled by the error amplifier, and a signal corresponding to a voltage across the resistive heater. A first differential amplifier develops a differential voltage corresponding to the heater voltage. A second differential amplifier is biased by the resistive heater current signal, and receives the differential voltage form the first differential amplifier. A differential current generated by the second differential amplifier produces the feedback power signal as an output voltage.

Abstract: A cathode arc source for depositing a coating on a substrate has an anode and a cathode station for a target, a first filter means comprising a filter duct having at least one bend, and first magnetic means for steering plasma through the filter duct for removal of macroparticles from the plasma. The apparatus comprises a second filter (10) for further removal of macroparticles from the plasma, made up of a baffle (11), an aperture (12) through which plasma can pass and second magnetic means (13) for steering plasma through the aperture. The aperture size may be less than 33% of the duct sectional area at that point. The source can also include an ion beam generator. Also described is a method of depositing coatings of ions using the second filter and closing the aperture in the filter when required.

Abstract: The invention describes composite coatings, in particular comprising carbon and another metallic element such as silicon or aluminum. These coatings have improved properties compared with pure tetrahedral amorphous carbon coatings, in that they have reduced stress levels and can be deposited at higher thicknesses, while retaining acceptable hardness and other useful mechanical properties. Also described are methods of making composite coatings, materials for making the coatings and substrates coated therewith. Specifically, a method of applying a coating to a substrate using a cathode arc source, comprises generating an arc between a cathode target and an anode of the source and depositing positive target ions on the substrate to form the coating, wherein the coating is a composite of at least first and second elements and the target comprises said at least first and second elements.

Abstract: A cathode arc source has means for generating first and second magnetic fields, of opposite or reverse direction to each other. The resultant magnetic field includes a null point between the target and the substrate, though close to the target. Field strength normal to the target is zero at the null point, and field strength lateral to the target is strong at the target surface, constraining movement of the arc spot and reducing the risk of migration off the target surface. A target is made by pressing graphite powder at elevated temperature and pressure in the absence of binding material. Both source and target contribute to reduced macroparticles in deposited films.

Abstract: Deposition apparatus incorporating either a single or multiple filtered cathodic arc (FCA) source for depositing coatings such as tetrahedral amorphous carbon (TAC); metal oxides; compounds and alloys of such materials onto various types of substrates, such as metals semiconductors, plastics ceramics and glasses. Substrates are moved through the plasma beam(s) of the FCA source(s) and beam scanning increases deposition area. Macroparticles are filtered by a double bend filter duct.

Abstract: A cathode arc source for depositing a coating on a substrate has an anode and a cathode station for a target, a first filter means comprising a filter duct having at least one bend, and first magnetic means for steering plasma through the filter duct for removal of macroparticles from the plasma. The apparatus comprises a second filter (10) for further removal of macroparticles from the plasma, made up of a baffle (11), an aperture (12) through which plasma can pass and second magnetic means (13) for steering plasma through the aperture. The aperture size may be less than 33% of the duct sectional area at that point. The source can also include an ion beam generator. Also described is a method of depositing coatings of ions using the second filter and closing the aperture in the filter when required.

Abstract: The present invention relates to a heat transfer surface comprising a layer of carbon, to a heating element or condenser comprising said heat transfer surface, to a method of applying said heat transfer surface, and to a method for carrying out dropwise condensation employing said heat transfer surface. The carbon layer employed in the present invention is tetrahedral amorphous carbon and/or diamond-like carbon. In addition, the carbon layer may be a composite (eg. an alloy) of the above carbon sources with another component such as nickel, chromium or Teflon®. The heat transfer surface of the present invention permits dropwise condensation rather than film wise condensation to proceed. The surface also exhibits improved resistance to fouling such as scale build-up caused by hard water. The heat transfer surface of the present invention has particular application in kettles, washing machines, dishwashers and condensers.

Abstract: Deposition apparatus incorporating either a single or multiple filtered cathodic arc (FCA) source for depositing coatings such as tetrahedral amorphous carbon (TAC); metal oxides; compounds and alloys of such materials onto various types of substrates, such as metals semiconductors, plastics ceramics and glasses. Substrates are moved through the plasma beam(s) of the FCA source(s) and beam scanning increases deposition area. Macroparticles are filtered by a double bend filter duct.

Abstract: A cathode arc source for depositing a coating on a substrate has an anode and a cathode station for a target, a first filter means comprising a filter duct having at least one bend, and first magnetic means for steering plasma through the filter duct for removal of macroparticles from the plasma. The apparatus comprises a second filter for further removal of macroparticles from the plasma, made up of a baffle, an aperture through which plasma can pass and second magnetic means for steering plasma through the aperture. The source can also include an ion beam generator. Also described is a method of depositing coatings of ions using the second filter and closing the aperture in the filter when required.