Patents by Inventor Sidlgata V. Sreenivasan

Sidlgata V. Sreenivasan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Positive tone bi-layer method
    Patent number: 7947608
    Abstract: Methods of imprint lithography are described. Generally, the methods include imprinting, via a patterned mold, a pattern into a polymerizable fluid composition on a substrate to form a patterned imprinting layer. A conformal layer is overlayed on the patterned imprinting layer. A portion of the conformal layer is used as a hard mask for subsequent processing. The imprinted pattern may be transferred to the substrate by a plurality of etches.
    Type: Grant
    Filed: November 15, 2010
    Date of Patent: May 24, 2011
    Assignee: Molecular Imprints, Inc.
    Inventor: Sidlgata V. Sreenivasan
  • Step and repeat imprint lithography processes
    Patent number: 7943081
    Abstract: Methods of forming continuous layers on regions of a substrate are described. Generally, an imprint lithography template may contact liquid positioned on the substrate. The liquid may be cured forming a masking layer, and the imprint lithography template separated from the masking layer. Prior to separation, pressurized gas and/or vacuum may be applied between the template and the substrate. Additionally, during separation, pressurized gas and/or vacuum may be applied between the template and the substrate.
    Type: Grant
    Filed: April 19, 2010
    Date of Patent: May 17, 2011
    Assignee: Molecular Imprints, Inc.
    Inventors: Sidlgata V. Sreenivasan, Byung-Jin Choi, Norman E. Schumaker, Ronald D. Voisin, Michael P. C. Watts, Mario Johannes Meissl
  • Imprinting of partial fields at the edge of the wafer
    Patent number: 7935292
    Abstract: Edge field patterning of a substrate having full fields and partial fields may include patterning using a template having multiple mesas with each mesa corresponding to a field on the substrate. Polymerizable material may be deposited solely between the template and the full fields of the substrate. A non-reactive material may be deposited between the template and partial fields of the substrate.
    Type: Grant
    Filed: June 5, 2009
    Date of Patent: May 3, 2011
    Assignee: Molecular Imprints, Inc.
    Inventors: Sidlgata V. Sreenivasan, Byung-Jin Choi
  • Full-wafer or large area imprinting with multiple separated sub-fields for high throughput lithography
    Patent number: 7927541
    Abstract: A layer on a substrate is formed using an imprint lithography system. The layer is formed by providing a plurality of flowable regions on the substrate, spreading material in the flowable regions, and contacting the regions with a plurality of imprint lithography molds that are disposed on a template.
    Type: Grant
    Filed: April 27, 2009
    Date of Patent: April 19, 2011
    Assignee: Molecular Imprints, Inc.
    Inventor: Sidlgata V. Sreenivasan
  • LARGE AREA LINEAR ARRAY NANOIMPRINTING
    Publication number: 20110084417
    Abstract: Systems and methods for imprinting and aligning an imprint lithography template with a field on a substrate are described. The field of the substrate may include an elongated side, and alignment sensitivity on the elongated side may be intentionally minimized.
    Type: Application
    Filed: October 7, 2010
    Publication date: April 14, 2011
    Applicant: MOLECULAR IMPRINTS, INC.
    Inventors: Byung-Jin Choi, Sidlgata V. Sreenivasan, Anshuman Cherala
  • Capillary imprinting technique
    Patent number: 7910042
    Abstract: The present invention provides a method for patterning a substrate with a template having a mold that features positioning conformable material between the substrate and the mold and filling a volume defined between the mold and the substrate with the conformable material through capillary action between the conformable material and one of the mold and the substrate. Thereafter, the conformable material is solidified. Specifically, the distance between the mold and the substrate is controlled to a sufficient degree to attenuate, if not avoid, compressive forces between the mold and the substrate. As a result, upon initial contact of the mold with the conformable material, spontaneous capillary filling of the volume between the mold and the substrate occurs.
    Type: Grant
    Filed: February 17, 2010
    Date of Patent: March 22, 2011
    Assignee: Molecular Imprints, Inc.
    Inventors: Byung-Jin Choi, Sidlgata V. Sreenivasan
  • Positive Tone Bi-Layer Method
    Publication number: 20110056911
    Abstract: Methods of imprint lithography are described. Generally, the methods include imprinting, via a patterned mold, a pattern into a polymerizable fluid composition on a substrate to form a patterned imprinting layer. A conformal layer is overlayed on the patterned imprinting layer. A portion of the conformal layer is used as a hard mask for subsequent processing. The imprinted pattern may be transferred to the substrate by a plurality of etches.
    Type: Application
    Filed: November 15, 2010
    Publication date: March 10, 2011
    Applicant: MOLECULAR IMPRINTS, INC.
    Inventor: Sidlgata V. Sreenivasan
  • Functional Nanoparticles
    Publication number: 20110049096
    Abstract: Functional nanoparticles may be formed using at least one nano-lithography step. In one embodiment, sacrificial material may be patterned on a multi-layer substrate using an imprint lithography system. The pattern may be further etched into the multi-layer substrate. Functional material may then be deposited on multi-layer substrate and solidified. At least a portion of the functional material may then be removed to provide a crown surface exposing pillars. Pillars may be removed from multi-layer substrate forming functional nanoparticles.
    Type: Application
    Filed: August 11, 2010
    Publication date: March 3, 2011
    Applicants: BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM, MOLECULAR IMPRINTS, INC.
    Inventors: Sidlgata V. Sreenivasan, Shuqiang Yang, Frank Y. Xu, Vikramjit Singh
  • Nanostructured thin film inorganic solar cells
    Publication number: 20110048518
    Abstract: Inorganic solar cells having a nano-patterned p-n or p-i-n junction to reduce electron and hole travel distance to the separation interface to be less than the magnitude of the drift length or diffusion length, and meanwhile to maintain adequate active material to absorb photons. Formation of the inorganic solar cells may include one or more nano-lithography steps.
    Type: Application
    Filed: August 17, 2010
    Publication date: March 3, 2011
    Applicants: MOLECULAR IMPRINTS, INC., BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM
    Inventors: Shuqiang Yang, Sidlgata V. Sreenivasan, Frank Y. Xu
  • Method and System to Control Movement of a Body for Nano-Scale Manufacturing
    Publication number: 20110048160
    Abstract: Systems to control movement of a template during an imprint lithography process are described. The systems include an orientation stage having an inner frame, and outer frame, and a plurality of actuators coupled between the inner frame and the outer frame to vary translational motion and impart angular motion about a plurality of axes.
    Type: Application
    Filed: November 9, 2010
    Publication date: March 3, 2011
    Applicant: MOLECULAR IMPRINTS. INC.
    Inventors: Byung-Jin Choi, Sidlgata V. Sreenivasan
  • METHODS FOR MANUFACTURING CHUCKING SYSTEMS
    Publication number: 20110042345
    Abstract: Methods for manufacturing chucking systems are described. Generally, a plurality of flow holes may be provided in an optical flat. A surface of the optical flat may be masked and patterned to provide a desired feature (e.g., pins or grooves). The surface may etched to produce the desired feature on the surface of the optical flat.
    Type: Application
    Filed: October 29, 2010
    Publication date: February 24, 2011
    Applicant: BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM
    Inventors: Byung-Jin Choi, Sidlgata V. Sreenivasan, Stephen C. Johnson
  • NANOSTRUCTURED ORGANIC SOLAR CELLS
    Publication number: 20110030770
    Abstract: Solar cells having at least one N-type material layer and at least one P-type material layer forming a patterned p-n junction are described. A conducting layer may provide electrical communication between the p-n junction and an electrode layer.
    Type: Application
    Filed: July 23, 2010
    Publication date: February 10, 2011
    Applicants: MOLECULAR IMPRINTS, INC., BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM
    Inventors: Sidlgata V. Sreenivasan, Shuqiang Yang, Frank Y. Xu, Fen Wan
  • Positive tone bi-layer method
    Patent number: 7858528
    Abstract: Methods of patterning a substrate including creating a multi-layered structure by forming, on the substrate, a patterned layer having protrusions and recessions are described. A polymerizable material composition is dispense on the patterned layer defining a conformal layer, with the multi-layered structure having a crown surface facing away from the substrate. Portions of the multi-layered structure are removed to expose regions of the substrate in superimposition with the protrusions, while forming a hard mask in areas of the crown surface in superimposition with the recessions.
    Type: Grant
    Filed: January 19, 2010
    Date of Patent: December 28, 2010
    Assignee: Molecular Imprints, Inc.
    Inventor: Sidlgata V. Sreenivasan
  • Self-Aligned Cross-Point Memory Fabrication
    Publication number: 20100323490
    Abstract: Fabricating a cross-point memory structure using two lithography steps with a top conductor and connector or memory element and a bottom conductor orthogonal to the top connector. A first lithography step followed by a series of depositions and etching steps patterns a first channel having a bottom conductor. A second lithography step followed by a series of depositions and etching steps patterns a second channel orthogonal to the first channel and having a memory element connecting the an upper conductor and the lower conductor at their overlaid intersections.
    Type: Application
    Filed: August 10, 2010
    Publication date: December 23, 2010
    Applicant: MOLECULAR IMPRINTS, INC.
    Inventors: Sidlgata V. Sreenivasan, Christopher Mark Melliar-Smith, Dwayne L. LaBrake
  • Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template
    Publication number: 20100291257
    Abstract: A nanoimprint lithography template including, inter alia, a body having first and second opposed sides with a first surface disposed on the first side, the second side having a recess disposed therein, the body having first and second regions with the second region surrounding the first region and the recess in superimposition with the first region, with a portion of the first surface in superimposition with the first region being spaced-apart from the second side a first distance and a portion of the first surface in superimposition with the second region being spaced-apart from the second side a second distance, with the second distance being greater than the first distance; and a mold disposed on the first side of the body in superimposition a portion of the first region.
    Type: Application
    Filed: July 19, 2010
    Publication date: November 18, 2010
    Applicant: MOLECULAR IMPRINTS, INC.
    Inventors: Douglas J. Resnick, Mario J. Meissl, Byung-Jin Choi, Sidlgata V. Sreenivasan
  • Method of Concurrently Patterning a Substrate Having a Plurality of Fields and a Plurality of Alignment Marks
    Publication number: 20100278954
    Abstract: Imprint lithography templates for patterning substrates are described. The templates include a section having a mold a first pattern of alignment forming areas and template alignment marks. The additional sections are generally devoid of a mold. One or more of the additional section may include the first pattern of a second pattern of alignment forming areas and template alignment marks. The second pattern may correspond to the first pattern.
    Type: Application
    Filed: July 13, 2010
    Publication date: November 4, 2010
    Applicant: MOLECULAR IMPRINTS, INC.
    Inventors: Sidlgata V. Sreenivasan, Ian M. McMackin, Christopher Mark Melliar-Smith, Byung-Jin Choi
  • Real time imprint process diagnostics for defects
    Patent number: 7815824
    Abstract: Defects and/or particles during an imprint lithography process may provide exclusion zones and/or transition zones in the patterned layer. Exclusion zones and/or transition zones in the patterned layer may be identified to provide a region of interest on a template.
    Type: Grant
    Filed: February 25, 2009
    Date of Patent: October 19, 2010
    Assignees: Molecular Imprints, Inc., Board of Regents, The University of Texas
    Inventors: Sidlgata V. Sreenivasan, Shrawan Singhal, Byung-Jin Choi
  • METHOD FOR OBTAINING FORCE COMBINATIONS FOR TEMPLATE DEFORMATION USING NULLSPACE AND METHODS OPTIMIZATION TECHNIQUES
    Publication number: 20100259745
    Abstract: The present invention is directed towards a method for determining deformation parameters that a patterned device would undergo to minimize dimensional variations between a recorded pattern thereon and a reference pattern, the method including, inter alia, comparing spatial variation between features of the recorded pattern with respect to corresponding features of the reference pattern; and determining deformation forces to apply to the patterned device to attenuate the dimensional variations, with the forces having predetermined constraints, wherein a summation of a magnitude of the forces is substantially zero and a summation of moment of the forces is substantially zero.
    Type: Application
    Filed: June 22, 2010
    Publication date: October 14, 2010
    Applicants: MOLECULAR IMPRINTS, INC., BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM
    Inventors: Anshuman Cherala, Sidlgata V. Sreenivasan, Byung-Jin Choi, Ecron D. Thompson
  • Imprinting of partial fields at the edge of the wafer
    Patent number: 7802978
    Abstract: The present invention is directed towards several aspects of imprint lithography that have to be improved to address imprinting of partial fields and dies at the edge of the wafer.
    Type: Grant
    Filed: March 30, 2007
    Date of Patent: September 28, 2010
    Assignee: Molecular Imprints, Inc.
    Inventors: Sidlgata V. Sreenivasan, Byung-Jin Choi
  • Self-aligned cross-point memory fabrication
    Patent number: 7795132
    Abstract: Fabricating a cross-point memory structure using two lithography steps with a top conductor and connector or memory element and a bottom conductor orthogonal to the top connector. A first lithography step followed by a series of depositions and etching steps patterns a first channel having a bottom conductor. A second lithography step followed by a series of depositions and etching steps patterns a second channel orthogonal to the first channel and having a memory element connecting the an upper conductor and the lower conductor at their overlaid intersections.
    Type: Grant
    Filed: July 30, 2008
    Date of Patent: September 14, 2010
    Assignee: Molecular Imprints, Inc.
    Inventors: Sidlgata V. Sreenivasan, Christopher Mark Melliar-Smith, Dwayne L. LaBrake