Abstract: A lithography method for forming nanoparticles includes patterning sacrificial material on a multilayer substrate. In some cases, the pattern is transferred to or into a removable layer of the multilayer substrate, and functional material is disposed on the removable layer of the multilayer substrate and solidified. At least a portion of the functional material is then removed to expose protrusions of the removable layer, and pillars of the functional material are released from the removable layer to yield nanoparticles. In other cases, the multilayer substrate includes the functional material, and the pattern is transferred to or into a removable layer of the multilayer substrate. The sacrificial layer is removed, and pillars of the functional material are released from the removable layer to yield nanoparticles.

Abstract: A lithography method for forming nanoparticles includes patterning sacrificial material on a multilayer substrate. In some cases, the pattern is transferred to or into a removable layer of the multilayer substrate, and functional material is disposed on the removable layer of the multilayer substrate and solidified. At least a portion of the functional material is then removed to expose protrusions of the removable layer, and pillars of the functional material are released from the removable layer to yield nanoparticles. In other cases, the multilayer substrate includes the functional material, and the pattern is transferred to or into a removable layer of the multilayer substrate. The sacrificial layer is removed, and pillars of the functional material are released from the removable layer to yield nanoparticles.

Abstract: Methods for creating nano-shaped patterns are described. This approach may be used to directly pattern substrates and/or create imprint lithography molds that may be subsequently used to directly replicate nano-shaped patterns into other substrates in a high throughput process.

Abstract: The present invention is directed to a method that attenuates, if not avoids, heating of a substrate undergoing imprint lithography process and the deleterious effects associated therewith. To that end, the present invention includes a method of patterning a field of a substrate with a polymeric material that solidifies in response to actinic energy in which a sub-portion of the field is exposed sufficient to cure the polymeric material is said sub-portion followed by a blanket exposure of all of the polymeric material associated with the entire field to cure/solidify the same.

Abstract: A nanoimprint lithography template including, inter alia, a body having first and second opposed sides with a first surface disposed on the first side, the second side having a recess disposed therein, the body having first and second regions with the second region surrounding the first region and the recess in superimposition with the first region, with a portion of the first surface in superimposition with the first region being spaced-apart from the second side a first distance and a portion of the first surface in superimposition with the second region being spaced-apart from the second side a second distance, with the second distance being greater than the first distance; and a mold disposed on the first side of the body in superimposition a portion of the first region.

Abstract: Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.

Abstract: Methods for creating nano-shaped patterns are described. This approach may be used to directly pattern substrates and/or create imprint lithography molds that may be subsequently used to directly replicate nano-shaped patterns into other substrates in a high throughput process.

Abstract: Methods and systems are provided for patterning polymerizable material dispensed on flexible substrates or flat substrates using imprint lithography techniques. Template replication methods and systems are also presented where patterns from a master are transferred to flexible substrates to form flexible film templates. Such flexible film templates are then used to pattern large area flat substrates. Contact between the imprint template and substrate can be initiated and propagated by relative translation between the template and the substrate.

Abstract: Adaptive imprint planarization provides a surface having desired shape characteristics. Generally, topography of a first surface is mapped to provide a density map. The density map is evaluated to provide a drop pattern for dispensing polymerizable material on the first surface. The polymerizable material is solidified and etched to provide a second surface having the desired shape characteristics. Additionally, adaptive imprint planarization compensates for parasitic effects of the imprinting process.

Abstract: Systems to control movement of a template during an imprint lithography process are described. The systems include an orientation stage having an inner frame, and outer frame, and a plurality of actuators coupled between the inner frame and the outer frame to vary translational motion and impart angular motion about a plurality of axes.

Abstract: The present invention is directed to a method of and a mold for arranging features on a substrate to replicate the features with minimal dimensional variability. The method includes arranging features on a layer to minimize thickness variations in the layer that are attributable to density variations of the plurality of features on the layer. The features are transferred into an underlying substrate. It is believed that by forming the features so as to define a uniform fill factor in the layer, the thickness variations may be reduced, if not abrogated. To that end, one method in accordance with the present invention includes forming a flowable material on the substrate. Thereafter, a plurality of features is formed in a region of the flowable material. The plurality of features are arranged to provide a substantially uniform fill factor in the region.

Abstract: The present invention includes a substrate support system having a chuck body. The chuck body includes a body surface with a pin extending therefrom having a contact surface lying in a plane. The pin may be movably coupled to the chuck body to move with respect to the plane. The pin may also include a cross-member having multiple contact lands.

Abstract: The present invention is directed to methods for patterning a substrate by imprint lithography. Imprint lithography is a process in which a liquid is dispensed onto a substrate. A template is brought into contact with the liquid and the liquid is cured. The cured liquid includes an imprint of any patterns formed in the template. In one embodiment, the imprint process is designed to imprint only a portion of the substrate. The remainder of the substrate is imprinted by moving the template to a different portion of the template and repeating the imprint lithography process.

Abstract: The present invention is directed towards a system for expelling a gas positioned between a substrate and a mold, the substrate and the mold further having a liquid positioned therebetween.

Abstract: A silicon nanowire array including a multiplicity of silicon nanowires extending from a silicon substrate. Cross-sectional shape of the silicon nanowires and spacing between the silicon nanowires can be selected to maximize the ratio of the surface area of the silicon nanowires to the volume of the nanowire array. Methods of forming the silicon nanowire array include a nanoimprint lithography process to form a template for the silicon nanowire array and an electroless etching process to etch the template formed by the nanoimprint lithography process.

Abstract: Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.

Abstract: Droplets of polymerizable material may be patterned on a film sheet. The droplets of polymerizable material may be dispensed on the film sheet. A pre-determined force may be applied to an imprint lithography template such that localized trapping of the droplets of the polymerizable material on the film sheet is minimized and the droplets coalesce to form a continuous layer. The polymerizable material may be solidified to form a patterned layer having a residual layer and at least one feature.

Abstract: Methods of making nano-scale structures with geometric cross-sections, including convex or non-convex cross-sections, are described. The approach may be used to directly pattern substrates and/or create imprint lithography templates or molds that may be subsequently used to directly replicate nano-shaped patterns into other substrates, such as into a functional or sacrificial resist to form functional nanoparticles.

Abstract: Functional nanoparticles may be formed using at least one nanoimprint lithography step. In one embodiment, sacrificial material may be patterned on a multilayer substrate including one or more functional layers between removable layers using an imprint lithography process. At least one of the functional layers includes a functional material such as a pharmaceutical composition or imaging agent. The pattern may be further etched into the multilayer substrate. At least a portion of the functional material may then be removed to provide a crown surface exposing pillars. Removing the removable layers releases the pillars from the patterned structure to form functional nanoparticles such as drug or imaging agent carriers.

Abstract: A method of patterning a substrate comprising a plurality of fields, including, inter alia, positioning a first volume of fluid on a first subset of the plurality of fields of the substrate, with the first volume of fluid being subjected to a first evaporation time; positioning a second volume of fluid on a second subset of the plurality of fields of the substrate, differing from the first subset, with the second volume of fluid being subjected to a second evaporation time, differing from the first evaporation time; and patterning the first and second subsets of the plurality of fields, with the first subset of the plurality of fields being patterned prior to the second subset of the plurality of fields being patterned, with a volume associated with the second subset of the plurality of fields being greater than a volume associated with the first subset of the plurality of fields to compensate for the second evaporation time being greater than the first evaporation time.