Abstract: An array of hundreds of devices may be simultaneously processed on a chip to sub-micron dimensions by establishing tiny active regions for each transistor surrounded by field oxide filled motes or slotted regions, wherein the slots are utilized to dope the substrate within the action region. The N type substrate is double energy boron planted through one surface to establish a P region to a given depth. This surface is oxidized and photoresist masked conventionally to open regions for the slots which are ion milled or ODE etched to a given depth. N+ regions are established by the slots by ion implanting at an angle such that the entire depth of the slot is not doped but rather the doping is confined to a region within the double energy P implanted depth. Drive-in diffusion enlarges the N+ areas for the emitter and collecter and oxidation fills the mote insulating regions around the active area.

Abstract: The invention includes methods and apparatus for providing relatively long conductors on integrated chips with substantially reduced RC time constants. The preferred mode utilizes a substrate having a metallization pattern wherein etching or milling into the substrate creates a cavity with a metallization conductor disposed in the mouth of the cavity, said cavity being metallized to provide the second conductor. A similar structure may be formed by utilizing orientation dependent etchant which attacks the (111) surface much quicker than the (100) surface to provide an etched V-shaped cavity wherein the first conductor is still an elongated metallization segment in the mouth of the V, and the V is metallized to provide the second conductor.

Abstract: The invention includes methods and apparatus for providing relatively long conductors on integrated chips with substantially reduced RC time constants. The preferred mode utilizes a substrate having a metallization pattern wherein etching or milling into the substrate creates a cavity with a metallization conductor disposed in the mouth of the cavity, said cavity being metallized to provide the second conductor. A similar structure may be formed by utilizing orientation dependent etchant which attacks the (111) surface much quicker than the (100) surface to provide an etched V-shaped cavity wherein the first conductor is still an elongated metallization segment in the mouth of the V, and the V is metallized to provide the second conductor.

Abstract: A device for reading information representing magnetization patterns on a medium by means of a time-of-flight magnetotransistor detector. The time-of-flight magnetotransistor detector consists of a bipolar transistor implemented on a semiconductor surface which is in a magnetic flux coupling with a plurality of magnetization patterns. Such magnetization patterns which may be generated by a magnetic bubble domain on an adjacent bubble domain device or by a magnetized region on an adjacent media such as a magnetic tape or disk. The magnetotransistor detector consists of an emitter region, an elongated base region, and a collector region, and a twin-lead thin-film transmission line in capacitive coupling with the base region of the magnetotransistor. The presence of a magnetic field in the base region creates a Hall voltage which produces a pulse on the transmission line.

Abstract: A parametric amplifier including a semiconductor body portion (10) comprising a plurality of zones (11,13,15, . . . ) of a first conductivity type, each of the zones having a thickness less than or equal to the Debye length in the semiconductor body portion (11,13,15, . . . ), each of the zones being separated from one another by corresponding insulating layers (12,14, . . . ). The body portion has a first edge portion abutting a first edge of the plurality of zones, and a second edge portion abutting a second edge of the plurality of zones spaced apart from said first edge.A first interface (20) is provided adjacent the first edge portion for transmitting an electromagnetic wave into the semiconductor body portion for propagation therein; and a second interface (21) is provided adjacent the second edge portion for receiving an electromagnetic wave propagating in the body portion.