Abstract: In embodiments an optoelectronic semiconductor device includes a plurality of optoelectronic semiconductor chips, each having a first contact structure comprising a first contact element and a carrier having a holding structure, on which the optoelectronic semiconductor chips are each partly arranged and a second contact structure, wherein the first contact elements are movable by electrostatic forces between the first contact elements and the second contact structure in a direction of the carrier or away from the carrier and wherein the optoelectronic semiconductor chips are configured to switch between a first switching state and a second switching state by a movement.

Abstract: The invention relates to a method for producing a semiconductor component comprising a radiation-emitting optical semiconductor chip or a plurality of radiation-emitting optical semiconductor chips, said method comprising: applying the radiation-emitting optical semiconductor chip or the plurality of radiation-emitting optical semiconductor chips to a deformable flat support deforming the support; and permanently fixing the deformation.

Abstract: The invention relates to an optoelectronic semiconductor component, comprising a support which has a support element and a first and second contact structure, an optoelectronic semiconductor chip which is arranged on the support and is connected to the first and second contact structure in an electrically conductive manner, and a housing which is connected to the support in a form-fitting manner and has a cavity that is laterally delimited by a reflective housing wall of the housing and is arranged on the face of a first main surface of the support, wherein the wall thickness of the housing.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: An optoelectronic semiconductor device may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and an insulating intermediate layer. The second semiconductor layer may be arranged over a substrate. The first semiconductor layer may be arranged between the second semiconductor layer and the substrate. The first current spreading structure may be electrically connected to the first semiconductor layer, and the second current spreading structure electrically may be connected to the second semiconductor layer. The insulating intermediate layer may include a dielectric mirror and may be arranged between the second current spreading structure and the second semiconductor layer. The current spreading structures may overlap one another in a plane perpendicular to a main surface of the substrate. The first current spreading structure may be arranged at a larger distance from the first semiconductor layer than the second current spreading structure.

Abstract: A light-emitting semiconductor component may include a semiconductor body having an active region configured to emit a primary radiation, a first conversion element to convert the primary radiation to a first secondary radiation, a second conversion element to convert the primary radiation to a second secondary radiation, and a mask. The first conversion element and the second conversion element may be arranged at a top side of the semiconductor body, may be configured as bodies that partly cover the semiconductor body, and may be connected to the semiconductor body. The mask may be arranged between the first conversion element, the second conversion element, and the semiconductor body. The mask may have an opening in the region of each conversion element.

Abstract: An optoelectronic semiconductor component and a method for producing optoelectronic semiconductor components are disclosed. In an embodiment a optoelectronic semiconductor component includes a plurality of semiconductor pillars, each pillar having a tip and a base region at opposite ends, an electrical isolation layer surrounding at least part of the semiconductor pillars on side faces and at least one first electrical contact pad and at least one second electrical contact pad for energizing the semiconductor pillars, wherein a first portion of the semiconductor pillars are emitter pillars configured to generate radiation, wherein a second portion of the semiconductor pillars are non-radiating electrical contact pillars, wherein the contact pillars extend through the isolation layer such that all contact pads are located on the same side of the isolation layer, and wherein each contact pillars is coated with an electrically ohmically conductive outer layer.

Abstract: An optoelectronic assembly comprises at least two electrical contacts on a surface of an optoelectronic component for supplying electrical energy for generating electromagnetic radiation, and at least two meander-shaped contact lugs, each of which comprises a first and a second section. The first section in each case of the at least two meander-shaped contact lugs is coupled to one of the at least two electrical contacts. The second section in each case of the at least two meander-shaped contact lugs comprises a fastening element which is designed to go into a mechanical linkage to a fiber structure of a carrier and to create an electrical connection to the first section.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to an embodiment in which the textile component comprises at least one flexible thread that can be woven. A plurality of semiconductor columns are attached in or on the thread and are configured to generate radiation. Furthermore, a plurality of electrical lines are located in or on the thread, by means of which lines the semiconductor columns are electrically contacted. An average height (H) of the semiconductor columns in a direction transverse to a longitudinal direction (L) of the thread is at most 20% of an average diameter (D) of the thread.

Abstract: A semiconductor display may include a multiplicity of semiconductor pillars as well as first contact strips and second electrical contact strips. The semiconductor pillars each comprise a semiconductor core of a first conductivity type and a semiconductor shell of a second conductivity type different from the first conductivity type, as well as an active layer between them for radiation generation. The semiconductor pillars each comprise an energization shell which is applied onto the respective semiconductor shell for energization. The semiconductor pillars can be electrically driven independently of one another individually or in small groups by means of the first and second electrical contact strips.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: In an embodiment, a component includes a carrier and a main body disposed on the carrier, wherein the main body includes a first semiconductor layer of a first charge carrier type, a second semiconductor layer of a second charge carrier type, and an optically active zone located therebetween, the optically active zone configured to emit radiation, wherein the first semiconductor layer includes a contiguous main layer and local regions at least locally buried in the main layer and laterally enclosed by the main layer, wherein the local regions are doped, and wherein the local regions has a smaller vertical layer thickness compared to the first semiconductor layer.