Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: A system in a package (SIP) (195) includes carrier layer regions (107) that have a dielectric material with a metal post (109) therethrough, where adjacent carrier layer regions define a gap. A driver IC die (110) is positioned in the gap having nodes connected to bond pads (111) exposed by openings in a top side of a first passivation layer (113), with the bond pads facing up. A dielectric layer (116) is on the first passivation layer and carrier layer region (107) that includes filled through vias (116a) coupled to the bond pads and to the metal post (109). A light blocking layer (118) is on sidewalls and a bottom of the substrate. A first device (140) includes a light emitter that has first bondable features (151a). The light blocking layer blocks at least 90% of incident light. The first bondable features are flipchip mounted to a first portion of the bond pads.

Abstract: In an embodiment an optoelectronic array includes a first structured layer with a plurality of first regions, the first structured layer including a semiconductor material of a first doping type, a second structured layer with a plurality of second regions arranged on the first structured layer, the second structured layer including a semiconductor material of a second doping type and a plurality of active regions arranged between respective first and second regions forming optoelectronic elements, wherein first regions along a row of the plurality of rows are connected by first contact bridges, wherein second regions along a column of the plurality of columns are connected by second contact bridges, wherein the first contact bridges comprise a semiconductor material of the first doping type, and wherein the second contact bridges comprise a semiconductor material of the second doping type.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: In an embodiment a wafer includes a plurality of optoelectronic components and means for testing at least one of the optoelectronic components for at least one parameter, wherein the plurality of optoelectronic components includes at least one light-emitting layer, which is arranged between an insulating layer and a light emission layer, wherein the insulating layer of at least one optoelectronic component comprises a first contact and a second contact arranged on the light emission layer of the at least one optoelectronic component, and wherein the second contact is arranged outside a light emission surface of the at least one optoelectronic component.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip. The optoelectronic component also includes a control element for controlling an electric current and/or an electric voltage of the optoelectronic semiconductor chip. The optoelectronic semiconductor chip and the control element are arranged one above the other and are mechanically and electrically conductively connected to one another. The optoelectronic component further includes a first connection electrode and a second connection electrode for electrically contacting the optoelectronic component from the outside. The optoelectronic semiconductor chip and the control element are each electrically conductively connected to one of the first and second connection electrodes.

Abstract: An electromagnetic radiation emitting device and a method for applying a converter layer to an electromagnetic radiation emitting device are disclosed. In an embodiment, a method includes applying converter elements to a surface of a carrier, applying the converter elements to an electromagnetic radiation emitting device by applying the carrier to the electromagnetic radiation emitting device such that the surface of the carrier with the applied converter elements faces the electromagnetic radiation emitting device and forming a converter layer on the electromagnetic radiation emitting device by depositing a plurality of thin layers on the converter elements using an atomic layer deposition process.

Abstract: The invention relates to a light-emitting component comprising a light-emitting semiconductor chip, a transparent conductive layer, and at least two electrical connection points, wherein the transparent conductive layer covers the light-emitting semiconductor chip at least in places, and the electrical connection points are arranged on a side of the light-emitting semiconductor chip facing away from the transparent conductive layer.

Abstract: An optoelectronic device includes an optoelectronic semiconductor chip having a first and a second semiconductor layer having a first and second conductivity type, respectively; a first and a second current spreading layer; a dielectric reflective layer; and a plurality of first electrical connecting elements. The first semiconductor layer and the second semiconductor layer are stacked. The first current spreading layer and the second current spreading layer are arranged on a side of the first semiconductor layer facing away from the second semiconductor layer. The dielectric reflective layer is arranged between the first semiconductor layer and the first current spreading layer. The plurality of first electrical connecting elements extends through the dielectric reflective layer and is suitable to electrically connect the first semiconductor layer to the first current spreading layer. The second current spreading layer is electrically connected to the second semiconductor layer.

Abstract: In an embodiment an optoelectronic assembly includes a carrier having at least one contact region, at least one optoelectronic device arranged on the at least one contact region, a beam guiding element having a transparent material, arranged on the carrier, completely encasing the optoelectronic device and at least partially covering surface areas of the optoelectronic device, wherein the beam guiding element sheaths at least three optoelectronic devices and covers the surface areas of the optoelectronic devices, and wherein the optoelectronic devices are configured to generate light of different colors and a transparent conductive layer arranged at the beam guiding element at least in some regions on its surface, wherein the beam guiding element has a recess through which the at least one contact region is exposed on a side of the optoelectronic device facing away from the carrier, and wherein the recess is at least partially filled with a conductive material which is connected to the transparent conductive

Abstract: In embodiments an optoelectronic semiconductor device includes a plurality of optoelectronic semiconductor chips, each having a first contact structure comprising a first contact element and a carrier having a holding structure, on which the optoelectronic semiconductor chips are each partly arranged and a second contact structure, wherein the first contact elements are movable by electrostatic forces between the first contact elements and the second contact structure in a direction of the carrier or away from the carrier and wherein the optoelectronic semiconductor chips are configured to switch between a first switching state and a second switching state by a movement.

Abstract: The invention relates to a method for producing a semiconductor component comprising a radiation-emitting optical semiconductor chip or a plurality of radiation-emitting optical semiconductor chips, said method comprising: applying the radiation-emitting optical semiconductor chip or the plurality of radiation-emitting optical semiconductor chips to a deformable flat support deforming the support; and permanently fixing the deformation.

Abstract: The invention relates to an optoelectronic semiconductor component, comprising a support which has a support element and a first and second contact structure, an optoelectronic semiconductor chip which is arranged on the support and is connected to the first and second contact structure in an electrically conductive manner, and a housing which is connected to the support in a form-fitting manner and has a cavity that is laterally delimited by a reflective housing wall of the housing and is arranged on the face of a first main surface of the support, wherein the wall thickness of the housing.