Abstract: A pressure bulkhead for an aircraft fuselage having a skin element, with a first surface and a second surface, a circumferential edge and a center axis, and a reinforcement assembly, which has radially disposed reinforcement elements extending along the first surface radially between an outer end at the edge of the skin element and an inner end, which faces the center axis, wherein, in a cross section, which extends radially along the center axis, each of the radially disposed reinforcement elements defines first and second contour lines, each extending from the outer end of the radially disposed reinforcement elements to the inner end thereof, and the reinforcement assembly resting with the first contour lines thereof on the first surface of the skin element. A pressure bulkhead for an aircraft fuselage can efficiently absorb occurring pressure loads.

Abstract: An optoelectronic semiconductor component is disclosed. In an embodiment a component includes a housing having a recess, a first semiconductor chip for generating light of a first color and a second semiconductor chip for generating light of a second color which is different from the first color, wherein, during operation, a mixed radiation including at least the light of the first color is emitted along a main emission direction, wherein the first semiconductor chip is arranged in a first plane and the second semiconductor chip is arranged in a second plane in the recess, the planes following one another along the main emission direction, wherein active zones of the first and second semiconductor chips are arranged side by side to one another, and wherein at least one electrical connection surface of the first semiconductor chip forms a part of a mounting surface of the semiconductor component.

Abstract: In an embodiment, a method for producing a plurality of optoelectronic semiconductor components is disclosed, wherein the method includes inserting a plurality of optoelectronic semiconductor chips with a suitable orientation into a linear feeding device, conveying the optoelectronic semiconductor chips to an injection device having an outlet opening, encapsulating the optoelectronic semiconductor chips with at least one cladding layer in the injection device and pressing the encapsulated optoelectronic semiconductor chips out of the outlet opening, wherein a compound of optoelectronic semiconductor chips is formed in which the optoelectronic semiconductor chips are connected to one another by the at least one cladding layer and separating the compound into a plurality of optoelectronic semiconductor components each component having an optoelectronic semiconductor chip which is at least partially encapsulated by the at least one cladding layer.

Abstract: A method for mirror-coating lateral surfaces of optical components, a mirror-coated optical component and an optoelectronic semiconductor body mountable on surface are disclosed. In an embodiment, an optoelectronic semiconductor body includes a semiconductor chip having a radiation side and a contact side different from the radiation side, wherein contact elements for electrically contacting the semiconductor body are attached to the contact side, and wherein the contact elements are freely accessible. The body further includes a metal mirror layer disposed on the semiconductor chip, wherein the metal mirror layer has a reflectivity of at least 80% to radiation emitted by the semiconductor chip during operation, wherein the mirror layer is a continuous and contiguous mirror layer, which covers all sides of the semiconductor chip that are not the contact side and the radiation side by at least 95%, and wherein the mirror layer is arranged at the semiconductor chip in a form-fit manner.

Abstract: An optoelectronic semiconductor chip, an optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment the chip includes a main body including a carrier having a top, a bottom opposite the top and side faces connecting the bottom with the top and a semiconductor layer sequence arranged on the top of the carrier, wherein the semiconductor layer sequence is configured to emit or absorb electromagnetic radiation and two contact faces arranged on the semiconductor layer sequence. The chip further includes two contact elements contacting the contact faces, wherein the contact elements include conductor tracks which are guided from the contact faces over edges of the main body on the side faces of the carrier.

Abstract: A light-emitting semiconductor chip, a light-emitting component and a method for producing a light-emitting component are disclosed. In an embodiment a light-emitting semiconductor chip includes a substrate having a top surface, a bottom surface opposite the top surface and a first side surface extending transversely or perpendicularly to the bottom surface, a semiconductor body arranged on the top surface of the substrate, the semiconductor body comprising an active region configured to generate light and a contacting comprising a first current distribution structure and a second current distribution structure, which is formed to supply current to the active region, wherein the semiconductor chip is free of any connection point on a side of the semiconductor body facing away from the substrate and on the bottom surface of the substrate, and wherein the connection point is a connection point for electrically contacting the first and second current distribution structures.

Abstract: A method for producing optoelectronic devices and a surface-mountable optoelectronic device are disclosed. In an embodiment the method includes applying semiconductor chips laterally adjacent one another on a carrier, wherein contact sides of the chips face the carrier, and wherein each semiconductor chip comprises contact elements for external electrical contacting which are arranged on the contact side of the semiconductor chip and applying an electrically conductive layer on at least sub-regions of the sides of the semiconductor chips not covered by the carrier, wherein the electrically conductive layer is formed contiguously, and wherein protective elements prevent direct contact of the contact elements with the electrically conductive layer. The method further includes electrophoretically depositing a converter layer on the electrically conductive layer and removing the electrically conductive layer from regions between the converter layer and the semiconductor chips.

Abstract: A system for repairing a component made out of a plastic comprises a frame, a multiaxial guide device coupled with the frame, with a tool holder arranged thereon, an optical acquisition device, a processing device, and a plastic deposition device. The frame comprises a mounting device for retaining the frame on a component surface. The optical acquisition device, the processing device and the plastic deposition device are arranged on the tool holder. The optical acquisition device is set up to optically inspect a surface area of the component lying in proximity to the frame from at least one viewing angle, so as to acquire the spatial structure of the surface area. The processing device is set up to remove material of a damaged area from the component for generating a base surface with a desired structure and boundary edges.

Abstract: A mobile application device for dispensing a formed fibre composite strand has: a coupling unit for detachably fastening the application device to the handling device for moving the application device; a preforming unit for continuously forming an unprocessed fibre strand into a formed fibre strand with a formed fibre cross section settable by the preforming unit; an impregnating unit for continuously developing the formed fibre strand into a fibre composite strand by impregnation with a matrix material; and a postforming unit for continuously pressing the fibre composite strand to and through the dispensing unit and having a drive unit and an adjustable dispensing unit for continuously forming a fibre composite strand into a formed fibre composite strand with a dispensing cross section settable by the dispensing unit and for dispensing the same such that the formed fibre cross section is at least 70% congruent with the dispensing cross section.

Abstract: A light-emitting diode and a light module are disclosed. In an embodiment the light-emitting diode includes at least one light-emitting diode chip and a first optical element, which is reflective for light generated by the at least one light-emitting diode chip during operation, wherein the first optical element completely covers at least one of the at least one light-emitting diode chip in a plan view.

Abstract: A method for manufacturing an opto-electronic component (100) is given, comprising a provision of a carrier (1) with at least one mounting surface (11), a generation of at least two vias (4) in the carrier (1) with electrically conducting contacts (12, 13) running through the vias (4), a provision of at least one light-emitting semiconductor chip (2), wherein the semiconductor chip (2) comprises a growth substrate (10) and a layer sequence (7) epitaxially grown thereon, a mounting of the at least one semiconductor chip (2) onto the at least one mounting surface (11) of the carrier (1), wherein the semiconductor chip (2) is connected in an electrically conducting manner to the contacts (12, 13) in the same method step during the mounting onto the mounting surface (11), an isolation of the carrier (1) along isolation lines (V), wherein an isolation line (V) runs through at least one of the vias (4), so that, after the isolation, the contacts (12, 13) form contact surfaces (5) at at least one side surface (1a) o

Abstract: An optoelectronic component includes a light emitting semiconductor chip, including an emission side and comprising an underside, wherein the optoelectronic component is configured to emit light via the emission side, the optoelectronic component including an insulating layer, the light emitting semiconductor chip is embedded into the insulating layer, the light emitting semiconductor chip including two electrical contact locations, the contact locations face away from the emission side, a first and a second electrically conductive contact layer are provided, respectively, an electrically conductive contact layer electrically conductively connects to a contact location of the semiconductor chip, the electrically conductive contact layers are arranged in the insulating layer, the first electrically conductive contact layer adjoins a first side face of the optoelectronic component, and the second electrically conductive contact layer adjoins a second side face of the optoelectronic component.

Abstract: A lighting device (1) and an operating method for the lighting device (1), which comprises at least one base chip (21) and a plurality of cover emitter regions (22). The base chip or chips (21) and the cover emitter regions (22) are realized by light-emitting diode chips and are electrically controlled independently of one another. Main emission directions (M) of these light-emitting diode chips are oriented parallel to one another. The cover emitter regions (22) are partially overlapping with the at least one base chip (21), so that an overlap region (3, B) is formed and the at least one base chip (21) radiates through the cover emitter regions (22) during operation. The cover emitter regions (22) are arranged in a common plane perpendicular to the main emission directions (M).

Abstract: The invention relates in at least one embodiment to the production of optoelectronic semiconductor components and comprises the steps: A) providing an intermediate carrier (2) having a plurality of fixing points (23), B) providing optoelectronic semiconductor chips (3) each having a chip upper side (30) and a mounting side (32) located opposite thereto, wherein electric contact points (34) of the semiconductor chips (3) are each located on the mounting sides (32), C) attaching connecting means (4), D) fixing the contact points (34) to the fixing points (23) by means of the connecting means (4), E) producing a potting layer (5), such that the semiconductor chips (3) and the contact points (34) and the connecting means (4) are directly surrounded all round by the potting layer (5), F) detaching the semiconductor chips (3), such that the connecting means (4) are removed from the semiconductor chips (3) and recesses (44) are each provided at the contact points (34) as a negative form in relation to the connecting

Abstract: Described is an optoelectronic semiconductor chip (1) with a built-in bridging element (9, 9A) for overvoltage protection.

Abstract: An optoelectronic semiconductor component and a method for producing the same are disclosed. In an embodiment the semiconductor component includes a semiconductor chip, which emits electromagnetic radiation of a first wavelength range from a radiation emission surface. The semiconductor component further includes a first conversion layer located on a lateral flank of the semiconductor chip, wherein the first conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, and a second conversion layer located on the radiation emission surface of the semiconductor chip, wherein the second conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second or of a third wavelength range. The first conversion layer is different from the second conversion layer.

Abstract: A light-emitting diode includes an optoelectronic semiconductor chip that emits electromagnetic radiation through a radiation side along a main direction of emission running transversely to the radiation side during operation, the semiconductor chip is embedded in a solid body, wherein side surfaces and the radiation side are covered by the solid body in a form-fit manner, the solid body widens along the main direction of emission, a cover element is arranged downstream of the solid body in the main direction of emission and is applied directly onto the solid body, a side of a cover element facing away from the solid body is formed as a radiation exit surface of the light-emitting diode, and a first contact element is exposed in an unmounted and/or non-contacted state of the light-emitting diode.

Abstract: What is specified is: an optoelectronic semiconductor component (1) comprising a carrier (5) and a semiconductor body (2), wherein the semiconductor body is fastened on the carrier and has a semiconductor layer sequence having an active region (20) provided for generating and/or receiving radiation, a first semiconductor layer (21) and a second semiconductor layer (22). The active region is arranged between the first semiconductor layer and the second semiconductor layer. The carrier is electrically conductive and is divided into a first carrier body (51) and a second carrier body (52), wherein the first carrier body and the second carrier body are electrically insulated from one another. The first carrier body has a first external contact (61) of the semiconductor component on the side remote from the semiconductor body, wherein the first contact is electrically conductively connected to the first semiconductor layer via the first carrier body.

Abstract: A method for producing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment the method include A) providing at least two source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chip; B) providing a target substrate having a mounting plane, the mounting plane being configured for mounting the semiconductor chip; and C) transferring at least part of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips, within one type, maintain their relative position with respect to one another, so that each type of semiconductor chips arranged on the target substrate has a different height above the mounting plane, wherein the semiconductor chips are at least one of at least partially stacked one above the other or at least partially applied to at least one casting layer.

Abstract: A method for producing optoelectronic devices and a surface-mountable optoelectronic device are disclosed. In an embodiment the method includes applying semiconductor chips laterally adjacent one another on a carrier, wherein contact sides of the chips face the carrier, and wherein each semiconductor chip comprises contact elements for external electrical contacting which are arranged on the contact side of the semiconductor chip and applying an electrically conductive layer on at least sub-regions of the sides of the semiconductor chips not covered by the carrier, wherein the electrically conductive layer is formed contiguously, and wherein protective elements prevent direct contact of the contact elements with the electrically conductive layer. The method further includes electrophoretically depositing a converter layer on the electrically conductive layer and removing the electrically conductive layer from regions between the converter layer and the semiconductor chips.