Abstract: A gas sensing apparatus including a gas sensor, a gas determining circuit and a gas database is provided. The gas sensor includes at least two nanowire sensors. The gas sensor is configured to sense multiple gases and output a plurality of sensing signals. The gas determining circuit is coupled to the gas sensor. The gas determining circuit is configured to receive the sensing signals and determine types of the gases according to reference data and the sensing signals. The gas database is coupled to the gas determining circuit. The gas database stores the reference data and outputs the reference data to the gas determining circuit. Each of the nanowire sensors includes at least one nanowire. Structural properties of the nanowires are different.

Abstract: A sensor interface circuit and sensor output adjusting method are provided. The sensor interface circuit includes a processor and a gain control circuit. The processor obtains information of a linear region of a sensor to set a configuration corresponding to the sensor. The gain control circuit is coupled to the processor, performs a return-to-zero operation for a maximum electronic value and a minimum electronic value corresponding to the linear region and performs a full-scale operation for a slope of the linear region according to the maximum input range of an analog-to-digital converter which is a subsequent-stage circuit of the sensor interface circuit.

Abstract: A sensor device and a method of manufacturing the same are provided. The sensor device includes a substrate, a plurality of sensing electrodes, a humidity nanowire sensor, a temperature nanowire sensor, and a gas nanowire sensor. The sensing electrodes are formed on the substrate, and the humidity, the temperature and the gas nanowire sensors are also on the substrate. The humidity nanowire sensor includes an exposed first nanowire sensing region, the temperature nanowire sensor includes a second nanowire sensing region, and the gas nanowire sensor includes a third nanowire sensing region.

Abstract: A gas sensing apparatus including a gas sensor, a gas determining circuit and a gas database is provided. The gas sensor includes at least two nanowire sensors. The gas sensor is configured to sense multiple gases and output a plurality of sensing signals. The gas determining circuit is coupled to the gas sensor. The gas determining circuit is configured to receive the sensing signals and determine types of the gases according to reference data and the sensing signals. The gas database is coupled to the gas determining circuit. The gas database stores the reference data and outputs the reference data to the gas determining circuit. Each of the nanowire sensors includes at least one nanowire. Structural properties of the nanowires are different.

Abstract: A resistive random-access memory device includes a memory array, a read circuit, a write-back logic circuit and a write-back circuit. The read circuit reads the data stored in a selected memory cell and accordingly generates a first control signal. The write-back logic circuit generates a write-back control signal according to the first control signal and a second control signal. The write-back circuit performs a write-back operation on the selected memory cell according to the write-back control signal and a write-back voltage, so as to change a resistance state of the selected memory cell from a low resistance state to a high resistance state, and generates the second control signal according to the resistance state of the selected memory cell.

Abstract: First and second paths of the primary-coil of the transformer are located at different sides of the symmetry-line. First terminals of the first and second paths are first and second ports of the primary-coil. Second terminals of the first and second paths are connected to each other. Two partial paths of the first path are connected to each other by TSV. Two partial paths of the second path are connected to each other by TSV. Third and fourth paths of the secondary-coil of the transformer are located on different sides of the symmetry-line. First terminals of the third and fourth paths are first and second ports of the secondary-coil. Second terminals of the third and fourth paths are connected to each other. Two partial paths of the third path are connected to each other by TSV. Two partial paths of the fourth path are connected to each other by TSV.

Abstract: First and second paths of the primary-coil of the transformer are located at different sides of the symmetry-line. First terminals of the first and second paths are first and second ports of the primary-coil. Second terminals of the first and second paths are connected to each other. Two partial paths of the first path are connected to each other by TSV. Two partial paths of the second path are connected to each other by TSV. Third and fourth paths of the secondary-coil of the transformer are located on different sides of the symmetry-line. First terminals of the third and fourth paths are first and second ports of the secondary-coil. Second terminals of the third and fourth paths are connected to each other. Two partial paths of the third path are connected to each other by TSV. Two partial paths of the fourth path are connected to each other by TSV.

Abstract: A varactor is provided. A substrate includes a first surface, a second surface and a first opening and a second opening in the substrate. A conductive material is filling the first and second openings, to form a first through-wafer via (TWV) and a second through-wafer via. A first capacitor is coupled between the first through-wafer via and a first terminal. A second capacitor is coupled between the second through-wafer via and a second terminal. A capacitance of a depletion-region capacitor between the first through-wafer via and the second through-wafer via is determined by a bias voltage applied to the first through-wafer via and the second through-wafer via.

Abstract: A voltage-controlled oscillator (VCO) is provided. The VCO includes an oscillator unit disposed on a substrate, and a varactor unit. The varactor unit is coupled to the oscillator unit to form a VCO loop. The varactor unit includes a varactor and at least one control terminal. The varactor is disposed in the substrate, and includes at least two through-silicon via (TSV) structures. The at least one control terminal renders the varactor unit to be biased to change a capacitance value of the varactor.

Abstract: A varactor is provided. A substrate includes a first surface, a second surface and a first opening and a second opening in the substrate. A conductive material is filling the first and second openings, to form a first through-wafer via (TWV) and a second through-wafer via. A first capacitor is coupled between the first through-wafer via and a first terminal. A second capacitor is coupled between the second through-wafer via and a second terminal. A capacitance of a depletion-region capacitor between the first through-wafer via and the second through-wafer via is determined by a bias voltage applied to the first through-wafer via and the second through-wafer via.

Abstract: A resistive random-access memory device includes a memory array, a read circuit, a write-back logic circuit and a write-back circuit. The read circuit reads the data stored in a selected memory cell and accordingly generates a first control signal. The write-back logic circuit generates a write-back control signal according to the first control signal and a second control signal. The write-back circuit performs a write-back operation on the selected memory cell according to the write-back control signal and a write-back voltage, so as to change a resistance state of the selected memory cell from a low resistance state to a high resistance state, and generates the second control signal according to the resistance state of the selected memory cell.