Abstract: A method is provided for activating an exposed surface of a porous dielectric layer, the method comprising the steps of: filling with a first liquid at least the pores present in a part of the porous dielectric layer, the part comprising the exposed surface, removing the first liquid selectively from the surface, activating the exposed surface, and removing the first liquid from the bulk part of the porous dielectric layer.

Abstract: A method for defining regions with different surface liquid tension properties on a substrate is disclosed. The method includes: providing a substrate with a main surface having a first surface liquid tension property that is at least partially covered with a seed layer; forming at least one micro-bump on the seed layer leaving part of the seed layer exposed; patterning the exposed seed layer to expose part of the main surface; forming at least one closed-loop structure that encloses a region of the main surface and the at least one micro-bump; and chemically treating the main surface of the substrate to provide on a surface of at least one closed-loop structure and the at least one micro-bump a second surface liquid tension property. The second surface liquid tension property is substantially different from the first surface liquid tension property of the main surface and is liquid phobic.

Abstract: The present disclosure relates to a method (100) for depositing a layer on a III-V semiconductor substrate, in which this method comprises providing (102) a passivated III-V semiconductor substrate comprising a III-V semiconductor surface which has a surface passivation layer provided thereon for preventing oxidation of said III-V semiconductor surface. The surface passivation layer comprises a self-assembled monolayer material obtainable by the reaction on the surface of an organic compound of formula R-A, wherein A is selected from SH, SeH, TeH and SiX3. X is selected from H, Cl, O—CH3, O—C2H5, and O—C3H2, and R is a hydrocarbyl, fluorocarbyl or hydrofluorocarbyl comprising from 5 to 20 carbon atoms. The method further comprises thermally annealing (107) the III-V semiconductor substrate in a non-oxidizing environment such as to decompose the self-assembled monolayer material, and depositing (108) a layer on the III-V semiconductor surface in the non-oxidizing environment.

Abstract: A method for defining regions with different surface liquid tension properties on a substrate is disclosed. The method includes: providing a substrate with a main surface having a first surface liquid tension property that is at least partially covered with a seed layer; forming at least one micro-bump on the seed layer leaving part of the seed layer exposed; patterning the exposed seed layer to expose part of the main surface; forming at least one closed-loop structure that encloses a region of the main surface and the at least one micro-bump; and chemically treating the main surface of the substrate to provide on a surface of at least one closed-loop structure and the at least one micro-bump a second surface liquid tension property. The second surface liquid tension property is substantially different from the first surface liquid tension property of the main surface and is liquid phobic.

Abstract: A method for growing elongated nanostructures (7) only on the bottom (3) of a recessed structure (4), the method comprising: a. providing a substrate (5) comprising said recessed structure (4), said recessed structure (4) comprising: said bottom (3), and at least one sidewall (6), b. modifying the chemical nature of the surface of said at least one sidewall (6) so that said at least one sidewall (6) has a lower affinity than said bottom (3) for a catalyst film (2), c. providing said catalyst film (2) onto said bottom (3), d. thermally and/or plasma treating said film (2) so as to form said catalyst nanoparticles (1), and e. growing elongated nanostructures (7) in said recessed structure (4) using the catalyst nanoparticles (1).

Abstract: Polymer particles of improved mechanical hardness are provided, the polymer particles being subjected to a thermal cycle of heating and subsequently cooling. The polymer particles comprise combinations of preferably three monomers, the monomers having hydrophilic and hydrophobic groups in their polymer chain in order to achieve preferential orientation of the polymer chains in a polar solvent after applying the heating cycles of the invention (for example, but not limited to, polymethylmethacrylate and polystyrene based terpolymers and copolymers). Polymeric abrasives used in slurry compositions for polishing copper and their use in a chemical mechanical polishing method are also provided.

Abstract: A method for improving the mechanical hardness of polymer particles is provided, the method comprising subjecting the polymer particles to a thermal cycle of heating and subsequently cooling. The method is applicable for use with combinations of preferably three monomers, the monomers having hydrophilic and hydrophobic groups in their polymer chain in order to achieve preferential orientation of the polymer chains in a polar solvent after applying the heating cycles of the invention (for example, but not limited to, polymethylmethacrylate and polystyrene based terpolymers and copolymers). Polymeric abrasives used in slurry compositions for polishing copper and their use in a chemical mechanical polishing method are also provided.

Abstract: A method for improving the mechanical hardness of polymer particles is provided, the method comprising subjecting the polymer particles to a thermal cycle of heating and subsequently cooling. The method is applicable for use with combinations of preferably three monomers, the monomers having hydrophilic and hydrophobic groups in their polymer chain in order to achieve preferential orientation of the polymer chains in a polar solvent after applying the heating cycles of the invention (for example, but not limited to, polymethylmethacrylate and polystyrene based terpolymers and copolymers). Polymeric abrasives used in slurry compositions for polishing copper and their use in a chemical mechanical polishing method are also provided.

Abstract: A method for improving the mechanical hardness of polymer particles is provided, the method comprising subjecting the polymer particles to a thermal cycle of heating and subsequently cooling. The method is applicable for use with combinations of preferably three monomers, the monomers having hydrophilic and hydrophobic groups in their polymer chain in order to achieve preferential orientation of the polymer chains in a polar solvent after applying the heating cycles of the invention (for example, but not limited to, polymethylmethacrylate and polystyrene based terpolymers and copolymers). Polymeric abrasives used in slurry compositions for polishing copper and their use in a chemical mechanical polishing method are also provided.