Patents by Inventor Simon Armbruster

Simon Armbruster has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7494839
    Abstract: A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.
    Type: Grant
    Filed: December 13, 2004
    Date of Patent: February 24, 2009
    Assignee: Robert Bosch GmbH
    Inventors: Hubert Benzel, Frank Schaefer, Simon Armbruster, Gerhard Lammel, Christoph Schelling, Joerg Brasas
  • Patent number: 7404332
    Abstract: A micromechanical component and a method for producing a micromechanical component are proposed, a hollow space and a region of porous silicon being provided, the region of porous silicon being provided for lowering the pressure prevailing in the hollow space.
    Type: Grant
    Filed: March 6, 2003
    Date of Patent: July 29, 2008
    Assignee: Robert Bosch GmbH
    Inventors: Gerhard Lammel, Simon Armbruster, Frank Schaefer, Hubert Benzel
  • Patent number: 7354786
    Abstract: A micromechanical sensor element and a method for the production of a micromechanical sensor element that is suitable, for example in a micromechanical component, for detecting a physical quantity. Provision is made for the sensor element to include a substrate, an access hole and a buried cavity, at least one of the access holes and the cavity being produced in the substrate by a trench etching and/or, in particular, an isotropic etching process. The trench etching process includes different trenching (trench etching) steps which may be divided into a first phase and a second phase. Thus, in the first phase, at least one first trenching step is carried out in which, in a predeterminable first time period, material is etched out of the substrate and a depression is produced. In that trenching step, a typical concavity is produced in the wall of the depression.
    Type: Grant
    Filed: September 8, 2005
    Date of Patent: April 8, 2008
    Assignee: Robert Bosch GmbH
    Inventors: Hubert Benzel, Stefan Finkbeiner, Matthias Illing, Frank Schaefer, Simon Armbruster, Gerhard Lammel, Christoph Schelling, Joerg Brasas
  • Publication number: 20070126069
    Abstract: A micromechanical device and a method for producing this device are provided, the device having a sensor pattern that includes a spring pattern and a seismic mass. The seismic mass may be connected to the substrate material via the spring pattern, and a clearance may be provided in a direction perpendicular to the major substrate plane between the spring pattern and the substrate material. Alternatively, the spring pattern and the seismic mass may have a common, essentially continuous, front side surface.
    Type: Application
    Filed: November 15, 2006
    Publication date: June 7, 2007
    Inventors: Joerg Muchow, Hubert Benzel, Markus Lang, Regina Grote, Simon Armbruster, Gerhard Lammel, Christoph Schelling, Volkmar Senz
  • Publication number: 20060137460
    Abstract: A micromechanical component and a method for producing a micromechanical component are proposed, a hollow space and a region of porous silicon being provided, the region of porous silicon being provided for lowering the pressure prevailing in the hollow space.
    Type: Application
    Filed: March 6, 2003
    Publication date: June 29, 2006
    Inventors: Gerhard Lammel, Simon Armbruster, Frank Schaefer, Hubert Benzel
  • Publication number: 20060063293
    Abstract: Described is a method for manufacturing a micromechanical sensor element and a micromechanical sensor element manufactured in particular using such a method which has a hollow space or a cavity and a membrane for detecting a physical variable. Different method steps are performed for manufacturing the sensor element, among other things, a structured etch mask having a plurality of holes or apertures being applied on a semiconductor substrate. Moreover, an etch process is used to create depressions in the semiconductor substrate beneath the holes in the structured etch mask. Anodization of the semiconductor material is subsequently carried out, the anodization taking place preferably starting from the created depressions in the semiconductor substrate. Due to this process, porous areas are created beneath the depressions, a lattice-like structure made of untreated, i.e., non-anodized, substrate material remaining between the porous areas and the depressions.
    Type: Application
    Filed: September 8, 2005
    Publication date: March 23, 2006
    Inventors: Hubert Benzel, Stefan Finkbeiner, Matthias Illing, Frank Schaefer, Simon Armbruster, Gerhard Lammel, Christoph Schelling, Joerg Brasas
  • Publication number: 20060057816
    Abstract: A micromechanical sensor element and a method for the production of a micromechanical sensor element that is suitable, for example in a micromechanical component, for detecting a physical quantity. Provision is made for the sensor element to include a substrate, an access hole and a buried cavity, at least one of the access holes and the cavity being produced in the substrate by a trench etching and/or, in particular, an isotropic etching process. The trench etching process includes different trenching (trench etching) steps which may be divided into a first phase and a second phase. Thus, in the first phase, at least one first trenching step is carried out in which, in a predeterminable first time period, material is etched out of the substrate and a depression is produced. In that trenching step, a typical concavity is produced in the wall of the depression.
    Type: Application
    Filed: September 8, 2005
    Publication date: March 16, 2006
    Inventors: Hubert Benzel, Stefan Finkbeiner, Matthias Illing, Frank Schaefer, Simon Armbruster, Gerhard Lammel, Christoph Schelling, Joerg Brasas
  • Publication number: 20050181529
    Abstract: A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.
    Type: Application
    Filed: December 13, 2004
    Publication date: August 18, 2005
    Inventors: Hubert Benzel, Frank Schaefer, Simon Armbruster, Gerhard Lammel, Christoph Schelling, Joerg Brasas
  • Publication number: 20050142687
    Abstract: A method for producing a micromechanical diaphragm sensor includes providing a semiconductor substrate having a first region, a diaphragm, and a cavity that is located at least partially below the diaphragm. Above at least one part of the first region, a second region is generated in or on the surface of the semiconductor substrate, with at least one part of the second region being provided as crosspieces. The diaphragm is formed by a deposited sealing layer, and includes at least a part of the crosspieces.
    Type: Application
    Filed: December 13, 2004
    Publication date: June 30, 2005
    Inventors: Hubert Benzel, Frank Schaefer, Simon Armbruster, Gerhard Lammel, Christoph Schelling, Joerg Brasas